The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Arthur F. Witulski sits on this spectrum.
This scientist: 159 publications — 17th percentile
17% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Arthur F. Witulski sits on this spectrum.
This scientist: 40 D-Index — 36th percentile
36% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Arthur F. Witulski is affiliated with Vanderbilt University in the United States and has a scholarly focus on engineering, particularly electrical and electronic engineering. Their research predominantly explores the fields of semiconductor materials and devices, with a notable emphasis on radiation effects in electronics and silicon carbide semiconductor technologies.
Their work covers several specialized subfields including electronic, optical and magnetic materials, statistics, probability and uncertainty, safety, risk, reliability and quality, and condensed matter physics. These areas inform their investigations into semiconductor performance and failure mechanisms.
Witulski has contributed extensively to the literature with 43 publications primarily in engineering disciplines and has published 40 papers specifically in electrical and electronic engineering. The majority of these works appear in the IEEE Transactions on Nuclear Science, a venue in which they have 17 publications. Other publication venues include Materials Science Forum and Facta Universitatis - Series Electronics and Energetics.
Recent research outputs demonstrate a continued focus on single-event burnout (SEB) phenomena and reliability in advanced semiconductor devices. Representative papers include:
The research topics covered in their publications include:
Their frequent collaborators reflect interdisciplinary engagements across radiation effects and semiconductor device communities. Key co-authors include Ronald D. Schrimpf, Dennis R. Ball, Andrew L. Sternberg, K.F. Galloway, and Robert A. Reed.
J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena
O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva
M. Belkhayat;R. Cooley;A. Witulski
S.D. Johnson;A.F. Witulski;R.W. Erickson
S. D. Johnson;A. F. Witulski;R. W. Erickson
B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill
A.F. Witulski
M.A. Bajura;Y.. Boulghassoul;R.. Naseer;S.. DasGupta
B. Narasimham;V. Ramachandran;B.L. Bhuva;R.D. Schrimpf
Arthur F. Witulski;Dennis R. Ball;Kenneth F. Galloway;Arto Javanainen
R. Naseer;Y. Boulghassoul;J. Draper;S. DasGupta
A.F. Witulski;R.W. Erickson
O.A. Amusan;L.W. Massengill;M.P. Baze;A.L. Sternberg
T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman
O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva
J.D. Black;A.L. Sternberg;M.L. Alles;A.F. Witulski
O.A. Amusan;L.W. Massengill;B.L. Bhuva;S. DasGupta
B.D. Olson;O.A. Amusan;S. Dasgupta;L.W. Massengill
S. DasGupta;A.F. Witulski;B.L. Bhuva;M.L. Alles
A. F. Witulski;A. F. Hernandez;R. W. Erickson
N M Atkinson;A F Witulski;W T Holman;J R Ahlbin
D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein
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