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Electronics and Electrical Engineering

D-Index
40
Citations
8230
World Ranking
4429
National Ranking
1578

Overview

Arthur F. Witulski is affiliated with Vanderbilt University in the United States and has a scholarly focus on engineering, particularly electrical and electronic engineering. Their research predominantly explores the fields of semiconductor materials and devices, with a notable emphasis on radiation effects in electronics and silicon carbide semiconductor technologies.

Their work covers several specialized subfields including electronic, optical and magnetic materials, statistics, probability and uncertainty, safety, risk, reliability and quality, and condensed matter physics. These areas inform their investigations into semiconductor performance and failure mechanisms.

Witulski has contributed extensively to the literature with 43 publications primarily in engineering disciplines and has published 40 papers specifically in electrical and electronic engineering. The majority of these works appear in the IEEE Transactions on Nuclear Science, a venue in which they have 17 publications. Other publication venues include Materials Science Forum and Facta Universitatis - Series Electronics and Energetics.

Recent research outputs demonstrate a continued focus on single-event burnout (SEB) phenomena and reliability in advanced semiconductor devices. Representative papers include:

  • "Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs," 2021, IEEE Transactions on Nuclear Science
  • "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes," 2023, IEEE Transactions on Nuclear Science
  • "Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes," 2023, IEEE Transactions on Nuclear Science
  • "LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices," 2024, IEEE Transactions on Nuclear Science
  • "Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs," 2020, IEEE Transactions on Nuclear Science

The research topics covered in their publications include:

  • Radiation Effects in Electronics
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Materials and Devices
  • Electrostatic Discharge in Electronics
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ga2O3 and Related Materials
  • Advancements in Semiconductor Devices and Circuit Design

Their frequent collaborators reflect interdisciplinary engagements across radiation effects and semiconductor device communities. Key co-authors include Ronald D. Schrimpf, Dennis R. Ball, Andrew L. Sternberg, K.F. Galloway, and Robert A. Reed.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Charge Collection and Charge Sharing in a 130 nm CMOS Technology

    O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva

  • Large signal stability criteria for distributed systems with constant power loads

    M. Belkhayat;R. Cooley;A. Witulski

  • Comparison of resonant topologies in high-voltage DC applications

    S.D. Johnson;A.F. Witulski;R.W. Erickson

  • A comparison of resonant topologies in high voltage DC applications

    S. D. Johnson;A. F. Witulski;R. W. Erickson

  • Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

    B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill

  • Introduction to modeling of transformers and coupled inductors

    A.F. Witulski

  • Models and Algorithmic Limits for an ECC-Based Approach to Hardening Sub-100-nm SRAMs

    M.A. Bajura;Y.. Boulghassoul;R.. Naseer;S.. DasGupta

  • On-Chip Characterization of Single-Event Transient Pulsewidths

    B. Narasimham;V. Ramachandran;B.L. Bhuva;R.D. Schrimpf

  • Single-Event Burnout Mechanisms in SiC Power MOSFETs

    Arthur F. Witulski;Dennis R. Ball;Kenneth F. Galloway;Arto Javanainen

  • Critical Charge Characterization for Soft Error Rate Modeling in 90nm SRAM

    R. Naseer;Y. Boulghassoul;J. Draper;S. DasGupta

  • Extension of state-space averaging to resonant switches and beyond

    A.F. Witulski;R.W. Erickson

  • Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing

    O.A. Amusan;L.W. Massengill;M.P. Baze;A.L. Sternberg

  • A Hardened-by-Design Technique for RF Digital Phase-Locked Loops

    T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman

  • Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process

    O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva

  • HBD layout isolation techniques for multiple node charge collection mitigation

    J.D. Black;A.L. Sternberg;M.L. Alles;A.F. Witulski

  • Design Techniques to Reduce SET Pulse Widths in Deep-Submicron Combinational Logic

    O.A. Amusan;L.W. Massengill;B.L. Bhuva;S. DasGupta

  • Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology

    B.D. Olson;O.A. Amusan;S. Dasgupta;L.W. Massengill

  • Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

    S. DasGupta;A.F. Witulski;B.L. Bhuva;M.L. Alles

  • Small signal equivalent circuit modeling of resonant converters

    A. F. Witulski;A. F. Hernandez;R. W. Erickson

  • Layout Technique for Single-Event Transient Mitigation via Pulse Quenching

    N M Atkinson;A F Witulski;W T Holman;J R Ahlbin

  • Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

    D. R. Ball;J. M. Hutson;A. Javanainen;J.-M. Lauenstein

Frequent Co-Authors

Bharat L. Bhuva
Bharat L. Bhuva Vanderbilt University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Robert W. Erickson
Robert W. Erickson University of Colorado Boulder
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Robert Nemanich
Robert Nemanich Arizona State University

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