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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
18845
World Ranking
1133
National Ranking
470

John D. Cressler publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where John D. Cressler sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 914 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

John D. Cressler D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where John D. Cressler sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2001 - IEEE Fellow For contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors.

Overview

John D. Cressler is affiliated with the Georgia Institute of Technology in the United States and has a research focus primarily in engineering. Their work encompasses several subfields notably electrical and electronic engineering, biomedical engineering, atomic and molecular physics and optics, astronomy and astrophysics, and aerospace engineering.

The scientist's research explores multiple technical topics, with significant contributions in:

  • Radio Frequency Integrated Circuit Design
  • Advancements in Semiconductor Devices and Circuit Design
  • Microwave Engineering and Waveguides
  • Radiation Effects in Electronics
  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Advanced Power Amplifier Design

Notable recent papers include:

  • Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit, 2020, IEEE Journal of Solid-State Circuits
  • Integrated Silicon Photonics for Enabling Next-Generation Space Systems, 2021, Photonics
  • Cryogenic characterization of a ferroelectric field-effect-transistor, 2020, Applied Physics Letters
  • A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch, 2020, IEEE Microwave and Wireless Components Letters
  • Medical Undistancing Through Telemedicine: A Model Enabling Rapid Telemedicine Deployment in an Academic Health Center During the COVID-19 Pandemic, 2020, Telemedicine Journal and e-Health

Frequent collaborators in their research include:

  • Jeffrey W. Teng
  • Adrian Ildefonso
  • Yaw A. Mensah
  • Brett L. Ringel
  • Sunil G. Rao

Common venues for publication reflect a strong presence in specialized IEEE journals and letters, such as:

  • IEEE Transactions on Nuclear Science
  • IEEE Microwave and Wireless Technology Letters
  • IEEE Microwave and Wireless Components Letters
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Microwave Theory and Techniques

In 2001, John D. Cressler was recognized as an IEEE Fellow for contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors.

Best Publications

  • Silicon-Germanium Heterojunction Bipolar Transistors

    John D. Cressler

  • SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

    J.D. Cressler

  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • On the Potential of SiGe HBTs for Extreme Environment Electronics

    J.D. Cressler

  • Silicon Heterostructure Handbook : Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

    John D. Cressler

  • Extreme Environment Electronics

    John D. Cressler;H. Alan Mantooth

  • Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

    Zelei Guo;Rui Dong;Partha Sarathi Chakraborty;Nelson Lourenco

  • Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

    R. Mukhopadhyay;Yunseo Park;P. Sen;N. Srirattana

  • Radiation Effects in SiGe Technology

    John D. Cressler

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

    J.D. Cressler;J.H. Comfort;E.F. Crabbe;G.L. Patton

  • Design and fabrication of planar guard ring termination for high-voltage SiC diodes

    David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler

  • Half-terahertz operation of SiGe HBTs

    R. Krithivasan;Yuan Lu;J.D. Cressler;Jae-Sung Rieh

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

    Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph

  • Multiple-Bit Upset in 130 nm CMOS Technology

    A.D. Tipton;J.A. Pellish;R.A. Reed;R.D. Schrimpf

  • A unified approach to RF and microwave noise parameter modeling in bipolar transistors

    G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley

  • RF linearity characteristics of SiGe HBTs

    Guofu Niu;Qingqing Liang;J.D. Cressler;C.S. Webster

  • Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

    P. Marshall;M. Carts;S. Currie;R. Reed

  • Optimization of SiGe HBT technology for high speed analog and mixed-signal applications

    D.L. Harame;J.M.C. Stork;B.S. Meyerson;K.Y.-J. Hsu

  • A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

    G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna

Frequent Co-Authors

Guofu Niu
Guofu Niu Auburn University
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Robert A. Reed
Robert A. Reed Vanderbilt University
David L. Harame
David L. Harame IBM (United States)
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
John Papapolymerou
John Papapolymerou Michigan State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Keith A. Jenkins
Keith A. Jenkins IBM (United States)

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