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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
18845
World Ranking
1133
National Ranking
470

Research.com Recognitions

  • 2001 - IEEE Fellow For contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors.

Overview

John D. Cressler is affiliated with the Georgia Institute of Technology in the United States and has a research focus primarily in engineering. Their work encompasses several subfields notably electrical and electronic engineering, biomedical engineering, atomic and molecular physics and optics, astronomy and astrophysics, and aerospace engineering.

The scientist's research explores multiple technical topics, with significant contributions in:

  • Radio Frequency Integrated Circuit Design
  • Advancements in Semiconductor Devices and Circuit Design
  • Microwave Engineering and Waveguides
  • Radiation Effects in Electronics
  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Advanced Power Amplifier Design

Notable recent papers include:

  • Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit, 2020, IEEE Journal of Solid-State Circuits
  • Integrated Silicon Photonics for Enabling Next-Generation Space Systems, 2021, Photonics
  • Cryogenic characterization of a ferroelectric field-effect-transistor, 2020, Applied Physics Letters
  • A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch, 2020, IEEE Microwave and Wireless Components Letters
  • Medical Undistancing Through Telemedicine: A Model Enabling Rapid Telemedicine Deployment in an Academic Health Center During the COVID-19 Pandemic, 2020, Telemedicine Journal and e-Health

Frequent collaborators in their research include:

  • Jeffrey W. Teng
  • Adrian Ildefonso
  • Yaw A. Mensah
  • Brett L. Ringel
  • Sunil G. Rao

Common venues for publication reflect a strong presence in specialized IEEE journals and letters, such as:

  • IEEE Transactions on Nuclear Science
  • IEEE Microwave and Wireless Technology Letters
  • IEEE Microwave and Wireless Components Letters
  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Microwave Theory and Techniques

In 2001, John D. Cressler was recognized as an IEEE Fellow for contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors.

Best Publications

  • Silicon-Germanium Heterojunction Bipolar Transistors

    John D. Cressler

  • SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

    J.D. Cressler

  • Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

    D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe

  • On the Potential of SiGe HBTs for Extreme Environment Electronics

    J.D. Cressler

  • Silicon Heterostructure Handbook : Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

    John D. Cressler

  • Extreme Environment Electronics

    John D. Cressler;H. Alan Mantooth

  • Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

    Zelei Guo;Rui Dong;Partha Sarathi Chakraborty;Nelson Lourenco

  • Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

    R. Mukhopadhyay;Yunseo Park;P. Sen;N. Srirattana

  • Radiation Effects in SiGe Technology

    John D. Cressler

  • On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

    J.D. Cressler;J.H. Comfort;E.F. Crabbe;G.L. Patton

  • Design and fabrication of planar guard ring termination for high-voltage SiC diodes

    David C Sheridan;Guofu Niu;J.Neil Merrett;John D Cressler

  • Half-terahertz operation of SiGe HBTs

    R. Krithivasan;Yuan Lu;J.D. Cressler;Jae-Sung Rieh

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

    Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph

  • Multiple-Bit Upset in 130 nm CMOS Technology

    A.D. Tipton;J.A. Pellish;R.A. Reed;R.D. Schrimpf

  • A unified approach to RF and microwave noise parameter modeling in bipolar transistors

    G. Niu;J.D. Cressler;Shiming Zhang;W.E. Ansley

  • RF linearity characteristics of SiGe HBTs

    Guofu Niu;Qingqing Liang;J.D. Cressler;C.S. Webster

  • Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)

    P. Marshall;M. Carts;S. Currie;R. Reed

  • Optimization of SiGe HBT technology for high speed analog and mixed-signal applications

    D.L. Harame;J.M.C. Stork;B.S. Meyerson;K.Y.-J. Hsu

  • A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

    G. Niu;J.D. Cressler;S.J. Mathew;S. Subbanna

Frequent Co-Authors

Guofu Niu
Guofu Niu Auburn University
Alvin J. Joseph
Alvin J. Joseph GlobalFoundries (United States)
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Robert A. Reed
Robert A. Reed Vanderbilt University
David L. Harame
David L. Harame IBM (United States)
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
John Papapolymerou
John Papapolymerou Michigan State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Johannes M. C. Stork
Johannes M. C. Stork ON Semiconductor (United States)
Keith A. Jenkins
Keith A. Jenkins IBM (United States)

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