2001 - IEEE Fellow For contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors.
John D. Cressler mostly deals with Optoelectronics, Heterojunction bipolar transistor, Electrical engineering, Bipolar junction transistor and Transistor. His work carried out in the field of Optoelectronics brings together such families of science as Noise and Proton. His studies examine the connections between Heterojunction bipolar transistor and genetics, as well as such issues in Common emitter, with regards to Electron and Electrostatic induction.
His Electrical engineering study integrates concerns from other disciplines, such as Electronic engineering and Silicon-germanium. John D. Cressler interconnects Leakage, Semiconductor device, Silicon and Electronics in the investigation of issues within Bipolar junction transistor. In his study, Transconductance is inextricably linked to Electronic circuit, which falls within the broad field of Transistor.
John D. Cressler mainly investigates Optoelectronics, Electrical engineering, Heterojunction bipolar transistor, Silicon-germanium and Electronic engineering. His biological study spans a wide range of topics, including Transistor, Bipolar junction transistor and Irradiation. John D. Cressler combines subjects such as Doping and Silicon with his study of Bipolar junction transistor.
His Heterojunction bipolar transistor research is multidisciplinary, incorporating elements of Noise and Reliability. His Silicon-germanium research incorporates elements of Electronic circuit, Single event upset, X band, Radio frequency and Voltage. The concepts of his Electronic engineering study are interwoven with issues in Stress and Transient.
The scientist’s investigation covers issues in Optoelectronics, Silicon-germanium, Heterojunction bipolar transistor, Electronic engineering and Amplifier. His Optoelectronics research is multidisciplinary, incorporating perspectives in Wideband, Irradiation, Bandwidth and Transistor, Voltage. His research in Silicon-germanium intersects with topics in BiCMOS, Electronic circuit, Bipolar junction transistor and Transient.
His Heterojunction bipolar transistor study combines topics in areas such as Safe operating area, Waveform and Noise measurement. His Electronic engineering research integrates issues from Radio frequency and Reliability. His Amplifier research is classified as research in Electrical engineering.
His primary scientific interests are in Silicon-germanium, Optoelectronics, Electronic engineering, Heterojunction bipolar transistor and BiCMOS. John D. Cressler has researched Silicon-germanium in several fields, including Bipolar junction transistor, Radiometer, Transient and Radio frequency. John D. Cressler has included themes like Heterojunction and Frequency modulation in his Bipolar junction transistor study.
His study in Optoelectronics is interdisciplinary in nature, drawing from both Transistor, Transconductance, Absorbed dose and Stress. His studies in Electronic engineering integrate themes in fields like Amplifier and Noise figure. His Amplifier study is related to the wider topic of Electrical engineering.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Silicon-Germanium Heterojunction Bipolar Transistors
John D. Cressler.
(2002)
SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications
J.D. Cressler.
IEEE Transactions on Microwave Theory and Techniques (1998)
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe.
IEEE Transactions on Electron Devices (1995)
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
D.L. Harame;J.H. Comfort;J.D. Cressler;E.F. Crabbe.
IEEE Transactions on Electron Devices (1995)
On the Potential of SiGe HBTs for Extreme Environment Electronics
J.D. Cressler.
Proceedings of the IEEE (2005)
Silicon Heterostructure Handbook : Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
John D. Cressler.
(2005)
Extreme Environment Electronics
John D. Cressler;H. Alan Mantooth.
(2012)
Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors
Zelei Guo;Rui Dong;Partha Sarathi Chakraborty;Nelson Lourenco.
Nano Letters (2013)
Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end
R. Mukhopadhyay;Yunseo Park;P. Sen;N. Srirattana.
international microwave symposium (2005)
Half-terahertz operation of SiGe HBTs
R. Krithivasan;Yuan Lu;J.D. Cressler;Jae-Sung Rieh.
IEEE Electron Device Letters (2006)
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