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Electronics and Electrical Engineering

D-Index
58
Citations
12791
World Ranking
1866
National Ranking
53

Overview

Bernd Heinemann is affiliated with Innovations for High Performance Microelectronics in Germany and has a substantial portfolio of research publications primarily in the field of engineering, specifically electrical and electronic engineering. Their research contributions focus on areas such as radio frequency integrated circuit design, microwave engineering and waveguides, photonic and optical devices, millimeter-wave propagation and modeling, advanced power amplifier design, semiconductor quantum structures and devices, and superconducting and THz device technology.

Key recent papers authored or co-authored by Bernd Heinemann include:

  • A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link With a 220-255 GHz Tunable LO in a SiGe HBT Technology (2020), published in IEEE Transactions on Microwave Theory and Techniques
  • A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications (2022), published in IEEE Journal of Solid-State Circuits
  • 3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation (2020), published in IEEE Journal of Solid-State Circuits
  • Broadband Modeling, Analysis, and Characterization of SiGe HBT Terahertz Direct Detectors (2021), published in IEEE Transactions on Microwave Theory and Techniques
  • Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data (2020), published in IEEE Electron Device Letters

The frequent co-authors collaborating with Heinemann include Janusz Grzyb, Ullrich R. Pfeiffer, Pedro Rodríguez-Vázquez, H. Rücker, and Thomas Bücher. These collaborations reflect multiple joint studies in the domain of high-frequency circuit and device technologies.

Bernd Heinemann has contributed to publications primarily featured in the following venues:

  • IEEE Transactions on Microwave Theory and Techniques (3 publications)
  • IEEE Journal of Solid-State Circuits (2 publications)
  • IEEE Electron Device Letters (1 publication)
  • IEEE Transactions on Electron Devices (1 publication)

The main fields of study encompassing Heinemann's work include:

  • Engineering

Within engineering, subfields covered involve:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Astronomy and Astrophysics
  • Biomedical Engineering
  • Condensed Matter Physics

The major research topics addressed throughout their work include:

  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Photonic and Optical Devices
  • Millimeter-Wave Propagation and Modeling
  • Advanced Power Amplifier Design
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology

Best Publications

  • SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay

    B. Heinemann;R. Barth;D. Bolze;J. Drews

  • Half-Terahertz SiGe BiCMOS technology

    H. Rucker;B. Heinemann;A. Fox

  • SiGe HBT with fx/fmax of 505 GHz/720 GHz

    B. Heinemann;H. Rucker;R. Barth;F. Barwolf

  • Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology

    E Öjefors;B Heinemann;U R Pfeiffer

  • SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

    Michael Schroter;Tommy Rosenbaum;Pascal Chevalier;Bernd Heinemann

  • A 16-QAM 100-Gb/s 1-M Wireless Link With an EVM of 17% at 230 GHz in an SiGe Technology

    Pedro Rodriguez-Vazquez;Janusz Grzyb;Bernd Heinemann;Ullrich R. Pfeiffer

  • A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology

    Neelanjan Sarmah;Janusz Grzyb;Konstantin Statnikov;Stefan Malz

  • A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

    Holger Rücker;Bernd Heinemann;Wolfgang Winkler;R Barth

  • SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

    J. Bock;K. Aufinger;S. Boguth;C. Dahl

  • Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends

    E. Ojefors;B. Heinemann;U. R. Pfeiffer

  • A 820GHz SiGe chipset for terahertz active imaging applications

    Erik Ojefors;Janus Grzyb;Yan Zhao;Bernd Heinemann

  • A 210–270-GHz Circularly Polarized FMCW Radar With a Single-Lens-Coupled SiGe HBT Chip

    Janusz Grzyb;Konstantin Statnikov;Neelanjan Sarmah;Bernd Heinemann

  • High-Performance BiCMOS Technologies without Epitaxially-Buried Subcollectors and Deep Trenches

    B. Heinemann;R. Barth;D. Knoll;H. Rucker

  • Novel collector design for high-speed SiGe:C HBTs

    B. Heinemann;H. Rucker;R. Barth;J. Bauer

  • Towards THz SiGe HBTs

    P. Chevalier;T.F. Meister;B. Heinemann;S. Van Huylenbroeck

  • A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

    Ullrich R. Pfeiffer;Yan Zhao;Janusz Grzyb;Richard Al Hadi

  • Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

    Pascal Chevalier;Michael Schroter;Colombo R. Bolognesi;Vincenzo d'Alessandro

  • 160-GHz to 1-THz Multi-Color Active Imaging With a Lens-Coupled SiGe HBT Chip-Set

    Konstantin Statnikov;Janusz Grzyb;Bernd Heinemann;Ullrich R. Pfeiffer

  • SiGe BiCMOS Technology with 3.0 ps Gate Delay

    H. Riicker;B. Heinemann;R. Barth;J. Bauer

  • A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps

    H. Rucker;B. Heinemann;W. Winkler;R. Barth

  • A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link With a 220-255 GHz Tunable LO in a SiGe HBT Technology

    Pedro Rodriguez-Vazquez;Janusz Grzyb;Bernd Heinemann;Ullrich R. Pfeiffer

Frequent Co-Authors

Bernd Tillack
Bernd Tillack Innovations for High Performance Microelectronics
Ullrich R. Pfeiffer
Ullrich R. Pfeiffer University of Wuppertal
Janusz Grzyb
Janusz Grzyb Indie Semiconductor
H.J. Osten
H.J. Osten University of Hannover
John D. Cressler
John D. Cressler Georgia Institute of Technology
Lars Zimmermann
Lars Zimmermann Technical University of Berlin
Dietmar Kissinger
Dietmar Kissinger University of Ulm
Andreas Stelzer
Andreas Stelzer Johannes Kepler University of Linz
Klaus Aufinger
Klaus Aufinger Infineon Technologies (Germany)

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