World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
12791
World Ranking
1866
National Ranking
52

Bernd Heinemann publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Bernd Heinemann sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 458 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Bernd Heinemann D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Bernd Heinemann sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 58 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Bernd Heinemann is affiliated with Innovations for High Performance Microelectronics in Germany and has a substantial portfolio of research publications primarily in the field of engineering, specifically electrical and electronic engineering. Their research contributions focus on areas such as radio frequency integrated circuit design, microwave engineering and waveguides, photonic and optical devices, millimeter-wave propagation and modeling, advanced power amplifier design, semiconductor quantum structures and devices, and superconducting and THz device technology.

Key recent papers authored or co-authored by Bernd Heinemann include:

  • A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link With a 220-255 GHz Tunable LO in a SiGe HBT Technology (2020), published in IEEE Transactions on Microwave Theory and Techniques
  • A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications (2022), published in IEEE Journal of Solid-State Circuits
  • 3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation (2020), published in IEEE Journal of Solid-State Circuits
  • Broadband Modeling, Analysis, and Characterization of SiGe HBT Terahertz Direct Detectors (2021), published in IEEE Transactions on Microwave Theory and Techniques
  • Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data (2020), published in IEEE Electron Device Letters

The frequent co-authors collaborating with Heinemann include Janusz Grzyb, Ullrich R. Pfeiffer, Pedro Rodríguez-Vázquez, H. Rücker, and Thomas Bücher. These collaborations reflect multiple joint studies in the domain of high-frequency circuit and device technologies.

Bernd Heinemann has contributed to publications primarily featured in the following venues:

  • IEEE Transactions on Microwave Theory and Techniques (3 publications)
  • IEEE Journal of Solid-State Circuits (2 publications)
  • IEEE Electron Device Letters (1 publication)
  • IEEE Transactions on Electron Devices (1 publication)

The main fields of study encompassing Heinemann's work include:

  • Engineering

Within engineering, subfields covered involve:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Astronomy and Astrophysics
  • Biomedical Engineering
  • Condensed Matter Physics

The major research topics addressed throughout their work include:

  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Photonic and Optical Devices
  • Millimeter-Wave Propagation and Modeling
  • Advanced Power Amplifier Design
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology

Best Publications

  • SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay

    B. Heinemann;R. Barth;D. Bolze;J. Drews

  • Half-Terahertz SiGe BiCMOS technology

    H. Rucker;B. Heinemann;A. Fox

  • SiGe HBT with fx/fmax of 505 GHz/720 GHz

    B. Heinemann;H. Rucker;R. Barth;F. Barwolf

  • Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology

    E Öjefors;B Heinemann;U R Pfeiffer

  • SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

    Michael Schroter;Tommy Rosenbaum;Pascal Chevalier;Bernd Heinemann

  • A 16-QAM 100-Gb/s 1-M Wireless Link With an EVM of 17% at 230 GHz in an SiGe Technology

    Pedro Rodriguez-Vazquez;Janusz Grzyb;Bernd Heinemann;Ullrich R. Pfeiffer

  • A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology

    Neelanjan Sarmah;Janusz Grzyb;Konstantin Statnikov;Stefan Malz

  • A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

    Holger Rücker;Bernd Heinemann;Wolfgang Winkler;R Barth

  • SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

    J. Bock;K. Aufinger;S. Boguth;C. Dahl

  • Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends

    E. Ojefors;B. Heinemann;U. R. Pfeiffer

  • A 820GHz SiGe chipset for terahertz active imaging applications

    Erik Ojefors;Janus Grzyb;Yan Zhao;Bernd Heinemann

  • A 210–270-GHz Circularly Polarized FMCW Radar With a Single-Lens-Coupled SiGe HBT Chip

    Janusz Grzyb;Konstantin Statnikov;Neelanjan Sarmah;Bernd Heinemann

  • High-Performance BiCMOS Technologies without Epitaxially-Buried Subcollectors and Deep Trenches

    B. Heinemann;R. Barth;D. Knoll;H. Rucker

  • Novel collector design for high-speed SiGe:C HBTs

    B. Heinemann;H. Rucker;R. Barth;J. Bauer

  • Towards THz SiGe HBTs

    P. Chevalier;T.F. Meister;B. Heinemann;S. Van Huylenbroeck

  • A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

    Ullrich R. Pfeiffer;Yan Zhao;Janusz Grzyb;Richard Al Hadi

  • Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

    Pascal Chevalier;Michael Schroter;Colombo R. Bolognesi;Vincenzo d'Alessandro

  • 160-GHz to 1-THz Multi-Color Active Imaging With a Lens-Coupled SiGe HBT Chip-Set

    Konstantin Statnikov;Janusz Grzyb;Bernd Heinemann;Ullrich R. Pfeiffer

  • SiGe BiCMOS Technology with 3.0 ps Gate Delay

    H. Riicker;B. Heinemann;R. Barth;J. Bauer

  • A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps

    H. Rucker;B. Heinemann;W. Winkler;R. Barth

  • A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link With a 220-255 GHz Tunable LO in a SiGe HBT Technology

    Pedro Rodriguez-Vazquez;Janusz Grzyb;Bernd Heinemann;Ullrich R. Pfeiffer

Frequent Co-Authors

Bernd Tillack
Bernd Tillack Innovations for High Performance Microelectronics
Ullrich R. Pfeiffer
Ullrich R. Pfeiffer University of Wuppertal
Janusz Grzyb
Janusz Grzyb Indie Semiconductor
H.J. Osten
H.J. Osten University of Hannover
John D. Cressler
John D. Cressler Georgia Institute of Technology
Lars Zimmermann
Lars Zimmermann Technical University of Berlin
Dietmar Kissinger
Dietmar Kissinger University of Ulm
Andreas Stelzer
Andreas Stelzer Johannes Kepler University of Linz
Klaus Aufinger
Klaus Aufinger Infineon Technologies (Germany)

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