World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
5987
World Ranking
3980
National Ranking
1425

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to silicon-germanium bipolar-CMOS and RF silicon-on-insulator technology

Overview

Alvin J. Joseph is affiliated with GlobalFoundries in the United States and has made contributions primarily in the fields of Engineering and Materials Science. Their research focuses on Electrical and Electronic Engineering as well as Materials Chemistry, with additional work in Polymers and Plastics, Radiology, Nuclear Medicine and Imaging, and Electronic, Optical and Magnetic Materials.

The main research topics covered by Alvin J. Joseph include conducting polymers and their applications, organic electronics and photovoltaics, perovskite materials and applications, radio frequency integrated circuit design, lanthanide and transition metal complexes, liquid crystal research advancements, and quantum dots synthesis and properties.

Frequent co-authors in Joseph's work are Manoj A. G. Namboothiry, B. Anitha, Akhil Alexander, Vijith K. Pulikodan, and Muhammed Raees A.

Significant publication venues for Joseph include:

  • Journal of Physics D Applied Physics
  • Small
  • 2022 International Electron Devices Meeting (IEDM)
  • Investigative Radiology
  • Advanced Energy Materials

Notable recent papers authored or co-authored by Alvin J. Joseph are:

  • "415/610GHz fT/fMAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Solution-Processed Self-Powered Panchromatic Organic Photodiode and Its Application in Biomedical Devices," 2022, ACS Applied Electronic Materials
  • "Database management system for mobile crowdsourcing applications," 2021, Nigerian Journal of Technology
  • "Acetylammonium chloride as an additive for crystallization control and defect passivation in MAPbI3 based perovskite solar cells," 2022, Journal of Physics D Applied Physics
  • "High Electrical Conductivity and Hole Transport in an Insightfully Engineered Columnar Liquid Crystal for Solution-Processable Nanoelectronics," 2024, Small

Alvin J. Joseph was recognized as an IEEE Fellow in 2016 for contributions to silicon-germanium bipolar-CMOS and RF silicon-on-insulator technology.

Best Publications

  • Current status and future trends of SiGe BiCMOS technology

    D.L. Harame;D.C. Ahlgren;D.D. Coolbaugh;J.S. Dunn

  • Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

    R. Mukhopadhyay;Yunseo Park;P. Sen;N. Srirattana

  • A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

    A. Joseph;D. Coolbaugh;M. Zierak;R. Wuthrich

  • A Thin-Film SOI 180nm CMOS RF Switch Technology

    A. Botula;A. Joseph;J. Slinkman;R. Wolf

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

    Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph

  • Foundation of rf CMOS and SiGe BiCMOS technologies

    J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld

  • Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

    A.J. Joseph;D.L. Harame;B. Jagannathan;D. Coolbaugh

  • Low resistance and inductance backside through vias and methods of fabricating same

    Mete Erturk;Robert A. Groves;Jeffrey Bowman Johnson;Alvin Jose Joseph

  • Optimization of SiGe HBTs for operation at high current densities

    A.J. Joseph;J.D. Cressler;D.M. Richey;G. Niu

  • 40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology

    G. Freeman;M. Meghelli;Y. Kwark;S. Zier

  • An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations

    J.D. Cressler;R. Krithivasan;Gang Zhang;Guofu Niu

  • Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's

    D.M. Richey;J.D. Cressler;A.J. Joseph

  • Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

    J.B. Johnson;A.J. Joseph;D.C. Sheridan;R.M. Maladi

  • Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection

    X. Shawn Wang;Xin Wang;Fei Lu;Chen Zhang

  • Transistor noise in SiGe HBT RF technology

    Guofu Niu;J.D. Cressler;Zhenrong Jin;Shiming Zhang

  • The revolution in SiGe: Impact on device electronics

    D.L Harame;S.J Koester;G Freeman;P Cottrel

  • On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

    Jiahui Yuan;J.D. Cressler;R. Krithivasan;T. Thrivikraman

  • Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

    Jae-Sung Rieh;D. Greenberg;Qizhi Liu;A.J. Joseph

  • BiCMOS technology on SOI substrates

    John Joseph Ellis-Monaghan;Alvin Jose Joseph;Qizhi Liu;Kirk David Peterson

  • Through wafer vias and method of making same

    Hanyi Ding;Alvin Jose Joseph;Anthony Kendall Stamper

  • A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

    B. A. Orner;Q. Z. Liu;B. Rainey;A. Stricker

Frequent Co-Authors

John D. Cressler
John D. Cressler Georgia Institute of Technology
David L. Harame
David L. Harame IBM (United States)
Guofu Niu
Guofu Niu Auburn University
Gregory G. Freeman
Gregory G. Freeman IBM (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Robert A. Groves
Robert A. Groves IBM (United States)
Robert A. Reed
Robert A. Reed Vanderbilt University
Steven H. Voldman
Steven H. Voldman Independent Scientist / Consultant, US
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)

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