World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
5987
World Ranking
3980
National Ranking
1426

Alvin J. Joseph publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Alvin J. Joseph sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 307 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Alvin J. Joseph D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Alvin J. Joseph sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to silicon-germanium bipolar-CMOS and RF silicon-on-insulator technology

Overview

Alvin J. Joseph is affiliated with GlobalFoundries in the United States and has made contributions primarily in the fields of Engineering and Materials Science. Their research focuses on Electrical and Electronic Engineering as well as Materials Chemistry, with additional work in Polymers and Plastics, Radiology, Nuclear Medicine and Imaging, and Electronic, Optical and Magnetic Materials.

The main research topics covered by Alvin J. Joseph include conducting polymers and their applications, organic electronics and photovoltaics, perovskite materials and applications, radio frequency integrated circuit design, lanthanide and transition metal complexes, liquid crystal research advancements, and quantum dots synthesis and properties.

Frequent co-authors in Joseph's work are Manoj A. G. Namboothiry, B. Anitha, Akhil Alexander, Vijith K. Pulikodan, and Muhammed Raees A.

Significant publication venues for Joseph include:

  • Journal of Physics D Applied Physics
  • Small
  • 2022 International Electron Devices Meeting (IEDM)
  • Investigative Radiology
  • Advanced Energy Materials

Notable recent papers authored or co-authored by Alvin J. Joseph are:

  • "415/610GHz fT/fMAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Solution-Processed Self-Powered Panchromatic Organic Photodiode and Its Application in Biomedical Devices," 2022, ACS Applied Electronic Materials
  • "Database management system for mobile crowdsourcing applications," 2021, Nigerian Journal of Technology
  • "Acetylammonium chloride as an additive for crystallization control and defect passivation in MAPbI3 based perovskite solar cells," 2022, Journal of Physics D Applied Physics
  • "High Electrical Conductivity and Hole Transport in an Insightfully Engineered Columnar Liquid Crystal for Solution-Processable Nanoelectronics," 2024, Small

Alvin J. Joseph was recognized as an IEEE Fellow in 2016 for contributions to silicon-germanium bipolar-CMOS and RF silicon-on-insulator technology.

Best Publications

  • Current status and future trends of SiGe BiCMOS technology

    D.L. Harame;D.C. Ahlgren;D.D. Coolbaugh;J.S. Dunn

  • Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

    R. Mukhopadhyay;Yunseo Park;P. Sen;N. Srirattana

  • A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

    A. Joseph;D. Coolbaugh;M. Zierak;R. Wuthrich

  • A Thin-Film SOI 180nm CMOS RF Switch Technology

    A. Botula;A. Joseph;J. Slinkman;R. Wolf

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

    Gang Zhang;J.D. Cressler;Guofu Niu;A.J. Joseph

  • Foundation of rf CMOS and SiGe BiCMOS technologies

    J. S. Dunn;D. C. Ahlgren;D. Coolbaugh;N. B. Feilchenfeld

  • Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

    A.J. Joseph;D.L. Harame;B. Jagannathan;D. Coolbaugh

  • Low resistance and inductance backside through vias and methods of fabricating same

    Mete Erturk;Robert A. Groves;Jeffrey Bowman Johnson;Alvin Jose Joseph

  • Optimization of SiGe HBTs for operation at high current densities

    A.J. Joseph;J.D. Cressler;D.M. Richey;G. Niu

  • 40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology

    G. Freeman;M. Meghelli;Y. Kwark;S. Zier

  • An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations

    J.D. Cressler;R. Krithivasan;Gang Zhang;Guofu Niu

  • Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's

    D.M. Richey;J.D. Cressler;A.J. Joseph

  • Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

    J.B. Johnson;A.J. Joseph;D.C. Sheridan;R.M. Maladi

  • Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection

    X. Shawn Wang;Xin Wang;Fei Lu;Chen Zhang

  • Transistor noise in SiGe HBT RF technology

    Guofu Niu;J.D. Cressler;Zhenrong Jin;Shiming Zhang

  • The revolution in SiGe: Impact on device electronics

    D.L Harame;S.J Koester;G Freeman;P Cottrel

  • On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

    Jiahui Yuan;J.D. Cressler;R. Krithivasan;T. Thrivikraman

  • Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

    Jae-Sung Rieh;D. Greenberg;Qizhi Liu;A.J. Joseph

  • BiCMOS technology on SOI substrates

    John Joseph Ellis-Monaghan;Alvin Jose Joseph;Qizhi Liu;Kirk David Peterson

  • Through wafer vias and method of making same

    Hanyi Ding;Alvin Jose Joseph;Anthony Kendall Stamper

  • A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

    B. A. Orner;Q. Z. Liu;B. Rainey;A. Stricker

Frequent Co-Authors

John D. Cressler
John D. Cressler Georgia Institute of Technology
David L. Harame
David L. Harame IBM (United States)
Guofu Niu
Guofu Niu Auburn University
Gregory G. Freeman
Gregory G. Freeman IBM (United States)
David C. Ahlgren
David C. Ahlgren IBM (United States)
Anthony K. Stamper
Anthony K. Stamper GlobalFoundries (United States)
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Robert A. Groves
Robert A. Groves IBM (United States)
Robert A. Reed
Robert A. Reed Vanderbilt University
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)

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