Gregory G. Freeman

What is he best known for?

The fields of study he is best known for:

• Semiconductor
• Transistor
• Electrical engineering

Optoelectronics, Electrical engineering, Heterojunction bipolar transistor, Bipolar junction transistor and Electronic engineering are his primary areas of study. His study explores the link between Optoelectronics and topics such as Transistor that cross with problems in Capacitance and AND gate. Frequency divider, Emitter-coupled logic, Ring oscillator and Integrated circuit is closely connected to Terahertz radiation in his research, which is encompassed under the umbrella topic of Heterojunction bipolar transistor.

His Bipolar junction transistor research incorporates elements of Heterojunction and Common emitter. His Electronic engineering study combines topics in areas such as Leakage, Noise, Cmos logic circuits and Rapid thermal annealing. The various areas that Gregory G. Freeman examines in his CMOS study include Silicon on insulator, Copper interconnect and Silicon-germanium.

His most cited work include:

• Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology (249 citations)
• SiGe HBTs with cut-off frequency of 350 GHz (167 citations)
• Record RF performance of 45-nm SOI CMOS Technology (155 citations)

What are the main themes of his work throughout his whole career to date?

Gregory G. Freeman focuses on Optoelectronics, Electrical engineering, Heterojunction bipolar transistor, Electronic engineering and Bipolar junction transistor. His Optoelectronics research integrates issues from Layer, Capacitance and Transistor. His Heterojunction bipolar transistor study incorporates themes from Phase noise, Bandwidth, Silicon-germanium, Engineering physics and Scaling.

His work in Electronic engineering addresses issues such as Reliability, which are connected to fields such as Stress and Semiconductor materials. His study in Bipolar junction transistor is interdisciplinary in nature, drawing from both Thermal resistance, Heterojunction, Optics and Doping. His CMOS research is multidisciplinary, relying on both Application-specific integrated circuit, Copper interconnect, Radio frequency, Integrated circuit and Silicon on insulator.

He most often published in these fields:

• Optoelectronics (55.56%)
• Electrical engineering (46.91%)
• Heterojunction bipolar transistor (35.80%)

What were the highlights of his more recent work (between 2007-2018)?

• Silicon on insulator (14.81%)
• Optoelectronics (55.56%)
• Electronic engineering (31.48%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Silicon on insulator, Optoelectronics, Electronic engineering, Electrical engineering and CMOS. His research integrates issues of Dram, Capacitance, Logic gate, Embedded system and eDRAM in his study of Silicon on insulator. Gregory G. Freeman interconnects Layer, Epitaxy and Radio frequency in the investigation of issues within Optoelectronics.

In Electronic engineering, Gregory G. Freeman works on issues like Electromigration, which are connected to Self heating and Stress. He regularly links together related areas like Communication channel in his Electrical engineering studies. His study in the fields of Second source under the domain of Transistor overlaps with other disciplines such as Stack and Halo.

Between 2007 and 2018, his most popular works were:

• 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL (70 citations)
• Scaling deep trench based eDRAM on SOI to 32nm and Beyond (37 citations)
• Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices (25 citations)

In his most recent research, the most cited papers focused on:

• Semiconductor
• Transistor
• Electrical engineering

His primary areas of investigation include Silicon on insulator, CMOS, Optoelectronics, Electrical engineering and MOSFET. His Silicon on insulator research is multidisciplinary, incorporating elements of Dram and Logic gate. His CMOS research focuses on Radio frequency and how it connects with Transconductance, Cutoff frequency and Shallow trench isolation.

Within one scientific family, Gregory G. Freeman focuses on topics pertaining to Field-effect transistor under Optoelectronics, and may sometimes address concerns connected to Capacitance. Transistor is the focus of his Electrical engineering research. His MOSFET research integrates issues from PMOS logic, Electronic circuit, Doping and Copper interconnect.