His primary areas of investigation include CMOS, Optoelectronics, Electronic engineering, Electrical engineering and Transceiver. His work deals with themes such as Optics, Low-power electronics and Equalization, which intersect with CMOS. His Optoelectronics research is multidisciplinary, incorporating perspectives in Vertical-cavity surface-emitting laser and Condensed matter physics.
The concepts of his Electronic engineering study are interwoven with issues in Phase-locked loop, Switched capacitor and Intersymbol interference. Alexander V. Rylyakov works mostly in the field of Electrical engineering, limiting it down to topics relating to Bit error rate and, in certain cases, Logic gate, Equivalent circuit, XOR gate, Dynamic range and Signal. His Transceiver research incorporates themes from Layer, Substrate, Wafer and Silicon.
Electronic engineering, CMOS, Optoelectronics, Electrical engineering and Phase-locked loop are his primary areas of study. His Electronic engineering study incorporates themes from Transmitter, Electronic circuit, Multiplexer and Equalization. His studies in CMOS integrate themes in fields like Photonics, Nanophotonics, Low-power electronics, Optical switch and Silicon on insulator.
Alexander V. Rylyakov has included themes like Vertical-cavity surface-emitting laser and Transceiver in his Optoelectronics study. The Electrical engineering study combines topics in areas such as Photonic integrated circuit and Bit error rate. The study incorporates disciplines such as Phase noise, Voltage-controlled oscillator, Jitter and Control theory in addition to Phase-locked loop.
His primary areas of study are Optoelectronics, Electronic engineering, Silicon photonics, CMOS and Optical switch. His study in Optoelectronics is interdisciplinary in nature, drawing from both Optical link, Modulation, Optics and Equalization. His Bandwidth study in the realm of Electronic engineering interacts with subjects such as Controller.
His CMOS study necessitates a more in-depth grasp of Electrical engineering. His Electrical engineering research incorporates elements of Data rate and Wavelength-division multiplexing. His Optical switch research integrates issues from Optical performance monitoring, Passive optical network and Optical cross-connect.
His primary scientific interests are in Optoelectronics, Silicon photonics, CMOS, Photonics and Electronic engineering. Alexander V. Rylyakov interconnects Optical link, Vertical-cavity surface-emitting laser, Optical transistor and Optics in the investigation of issues within Optoelectronics. His Silicon photonics study also includes
CMOS is a primary field of his research addressed under Electrical engineering. He studied Photonics and Electrical efficiency that intersect with Topology, Burst mode, Single-mode optical fiber and Passive optical network. Alexander V. Rylyakov is interested in Bandwidth, which is a branch of Electronic engineering.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A 71-Gb/s NRZ Modulated 850-nm VCSEL-Based Optical Link
Daniel M. Kuchta;Alexander V. Rylyakov;Fuad E. Doany;Clint L. Schow.
IEEE Photonics Technology Letters (2015)
A 10-Gb/s 5-tap DFE/4-tap FFE transceiver in 90-nm CMOS technology
John F. Bulzacchelli;Mounir Meghelli;Sergey V. Rylov;Woogeun Rhee.
international solid-state circuits conference (2006)
Rapid single flux quantum T-flip flop operating up to 770 GHz
W. Chen;A.V. Rylyakov;V. Patel;J.E. Lukens.
IEEE Transactions on Applied Superconductivity (1999)
A Wide Power Supply Range, Wide Tuning Range, All Static CMOS All Digital PLL in 65 nm SOI
J.A. Tierno;A.V. Rylyakov;D.J. Friedman.
IEEE Journal of Solid-state Circuits (2008)
A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications
Solomon Assefa;Steven Shank;William Green;Marwan Khater.
international electron devices meeting (2012)
Monolithic Silicon Integration of Scaled Photonic Switch Fabrics, CMOS Logic, and Device Driver Circuits
Benjamin G. Lee;Alexander V. Rylyakov;William M. J. Green;Solomon Assefa.
Journal of Lightwave Technology (2014)
A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
A. Joseph;D. Coolbaugh;M. Zierak;R. Wuthrich.
bipolar/bicmos circuits and technology meeting (2001)
64Gb/s transmission over 57m MMF using an NRZ modulated 850nm VCSEL
Daniel M. Kuchta;Alexander V. Rylyakov;Clint L. Schow;Jonathan E. Proesel.
optical fiber communication conference (2014)
Parallel optical transceiver module
Fuad E. Doany;Christopher V. Jahnes;Clint L. Schow;Mehmet Soyuer.
SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
Jae-Sung Rieh;B. Jagannathan;D.R. Greenberg;M. Meghelli.
IEEE Transactions on Microwave Theory and Techniques (2004)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: