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Electronics and Electrical Engineering
Germany
2026
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Physics
China
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
109
Citations
55483
World Ranking
107
National Ranking
2

Physics

D-Index
116
Citations
65786
World Ranking
937
National Ranking
7

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Germany Leader Award
  • 2026 - Research.com Physics in China Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Germany Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in China Leader Award
  • 2023 - Research.com Physics in China Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in China Leader Award
  • 2022 - Research.com Physics in China Leader Award
  • 2019 - IEEE Jun-ichi Nishizawa Medal “For contributions to the development and commercialization of quantum dot lasers.”
  • 2016 - Fellow, National Academy of Inventors
  • 2014 - Member of the National Academy of Engineering For innovations in nanomaterials, nanophysics, and nanodevices.
  • 2010 - IEEE Fellow For advancement of semiconductor nanostructures, and development of self-organized quantum dot lasers
  • 2006 - Max Born Medal and Prize, German Physical Society, Institute of Physics
  • 2004 - German National Academy of Sciences Leopoldina - Deutsche Akademie der Naturforscher Leopoldina – Nationale Akademie der Wissenschaften Physics
  • 2004 - Fellow of American Physical Society (APS) Citation For pioneering work in the basic understanding, development and first demonstration of selfassembled quantumdot heterostructures for novel lasers and amplifiers

Overview

Dieter Bimberg is affiliated with the Changchun Institute of Optics, Fine Mechanics and Physics in China. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a detailed focus on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, alongside contributions in Surfaces, Coatings and Films, Biomedical Engineering, and Materials Chemistry.

The main topics of their work include Semiconductor Lasers and Optical Devices, Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Optical Coatings and Gratings, Molecular Junctions and Nanostructures, Optical Network Technologies, and Advanced Materials Characterization Techniques.

Bimberg has contributed to several publication venues, frequently appearing in Photonics, Journal of Physics Photonics, Light Science & Applications, Optics Express, and Applied Physics Letters.

Their recent papers include:

  • Long-Wavelength VCSELs: Status and Prospects, 2023, Photonics
  • Demonstration of electrically injected vertical-cavity surface-emitting lasers with post-supported high-contrast gratings, 2022, Photonics Research
  • Optimization of VCSEL photon lifetime for minimum energy consumption at varying bit rates, 2020, Optics Express
  • Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems, 2023, IEEE Photonics Technology Letters
  • Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski-Krastanov quantum dots, 2021, Light Science & Applications

Frequent coauthors include Si-Cong Tian, A. V. Babichev, I. I. Novikov, S. A. Blokhin, and L. Ya. Karachinsky.

The scientist has received multiple awards throughout their career:

  • IEEE Jun-ichi Nishizawa Medal, 2019, for contributions to the development and commercialization of quantum dot lasers
  • Fellow, National Academy of Inventors, 2016
  • Member of the National Academy of Engineering, 2014, for innovations in nanomaterials, nanophysics, and nanodevices
  • IEEE Fellow, 2010, for advancement of semiconductor nanostructures, and development of self-organized quantum dot lasers
  • Max Born Medal and Prize, German Physical Society, Institute of Physics, 2006
  • Fellow of American Physical Society, 2004, citation for pioneering work in the basic understanding, development and first demonstration of self-assembled quantumdot heterostructures for novel lasers and amplifiers
  • German National Academy of Sciences Leopoldina - Nationale Akademie der Wissenschaften, 2004, in Physics

Best Publications

  • Quantum dot heterostructures

    Dieter Bimberg;Marius Grundmann;Nikolai N. Ledentsov

  • INAS/GAAS PYRAMIDAL QUANTUM DOTS: STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC STRUCTURE

    M. Grundmann;O. Stier;D. Bimberg

  • Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory

    O. Stier;M. Grundmann;D. Bimberg

  • Spontaneous ordering of nanostructures on crystal surfaces

    Vitaliy A. Shchukin;Dieter Bimberg

  • Ultralong Dephasing Time in InGaAs Quantum Dots

    Paola Borri;Wolfgang Werner Langbein;S. Schneider;U. Woggon

  • Low threshold, large To injection laser emission from (InGa)As quantum dots

    N. Kirstaedter;N.N. Ledentsov;M. Grundmann;D. Bimberg

  • Ultranarrow Luminescence Lines from Single Quantum Dots.

    M. Grundmann;J. Christen;N. N. Ledentsov;J. Bohrer

  • Spontaneous ordering of arrays of coherent strained islands.

    V. A. Shchukin;N. N. Ledentsov;P. S. Kop'ev;D. Bimberg

  • InGaAs-GaAs quantum-dot lasers

    D. Bimberg;N. Kirstaedter;N.N. Ledentsov;Zh.I. Alferov

  • Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.

    N. N. Ledentsov;V. A. Shchukin;M. Grundmann;N. Kirstaedter

  • Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

    R. Heitz;M. Veit;N. N. Ledentsov;A. Hoffmann

  • InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

    V. M. Ustinov;N. A. Maleev;A. E. Zhukov;A. R. Kovsh

  • Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

    Patrick Rinke;Momme Winkelnkemper;Abdallah Qteish;Dieter Bimberg

  • Quantum dot heterostructures: Fabrication, properties, lasers (Review)

    N. N. Ledentsov;V. M. Ustinov;V. A. Shchukin;P. S. Kop’ev

  • Theory of random population for quantum dots

    M. Grundmann;D. Bimberg

  • Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

    K.‐H. Goetz;D. Bimberg;H. Jürgensen;J. Selders

  • Epitaxy of Nanostructures

    Vitaly A. Shchukin;Nikolai N. Ledentsov;Dieter Bimberg

  • Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

    N. Kirstaedter;O. G. Schmidt;N. N. Ledentsov;D. Bimberg

  • Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots.

    R. Seguin;A. Schliwa;S. Rodt;K. Pötschke

  • RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS

    F. Hatami;N. N. Ledentsov;M. Grundmann;J. Böhrer

Frequent Co-Authors

V. M. Ustinov
V. M. Ustinov Russian Academy of Sciences
Marius Grundmann
Marius Grundmann Leipzig University
N. N. Ledentsov
N. N. Ledentsov Ioffe Institute
A. R. Kovsh
A. R. Kovsh Arista (United States)
A. E. Zhukov
A. E. Zhukov National Research University Higher School of Economics
Mikhail V. Maximov
Mikhail V. Maximov Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Peter Werner
Peter Werner Max Planck Society
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg

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