World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
54
Citations
13887
World Ranking
8793
National Ranking
21

Detlef Hommel publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Detlef Hommel sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 643 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Detlef Hommel D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Detlef Hommel sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 54 D-Index — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2014 - Member of Academia Europaea

Overview

Detlef Hommel is affiliated with the University of Wrocław in Poland. Their research primarily spans the fields of Materials Science, Physics and Astronomy, and Engineering, with a focus on subfields such as Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, and Atomic and Molecular Physics, and Optics.

Their work covers a range of topics including:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Magnetic properties of thin films
  • Semiconductor materials and interfaces

Hommel has published multiple papers in different scientific journals. Notable recent papers include:

  • "Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters", 2020, Applied Physics Reviews
  • "Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample", 2020, Journal of Alloys and Compounds
  • "Bistable Fermi level pinning and surface photovoltage in GaN", 2020, Applied Surface Science
  • "Anisotropic thermal conductivity of AlGaN/GaN superlattices", 2020, Nanotechnology
  • "Band Alignments of GeS and GeSe Materials", 2022, Crystals

The frequent co-authors with whom Hommel has collaborated include:

  • R. Kudrawiec
  • J. Serafińczuk
  • Dominika Majchrzak
  • M. Grodzicki
  • Wojciech Olszewski

Common publication venues for their research work consist of:

  • Vacuum
  • Journal of Alloys and Compounds
  • Applied Surface Science
  • arXiv (Cornell University)
  • Nanotechnology

In 2014, Detlef Hommel was recognized as a Member of Academia Europaea.

Best Publications

  • Superradiance of quantum dots

    Michael Scheibner;Thomas Schmidt;Lukas Worschech;Alfred Forchel

  • Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe Single Quantum Dots

    V. D. Kulakovskii;G. Bacher;R. Weigand;T. Kümmell

  • Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

    R. Chierchia;T. Böttcher;H. Heinke;S. Einfeldt

  • X-ray diffraction analysis of the defect structure in epitaxial GaN

    H. Heinke;V. Kirchner;S. Einfeldt;D. Hommel

  • Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry

    A. Kasic;Mathias Schubert;S. Einfeldt;D. Hommel

  • Direct Observation of Optically Injected Spin-Polarized Currents in Semiconductors

    J. Hübner;W. W. Rühle;M. Klude;D. Hommel

  • Biexciton versus Exciton Lifetime in a Single Semiconductor Quantum Dot

    G. Bacher;R. Weigand;J. Seufert;V. D. Kulakovskii

  • Direct observation of correlations between individual photon emission events of a microcavity laser

    J. Wiersig;J. Wiersig;C. Gies;F. Jahnke;M. Aßmann

  • Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

    Plamen Paskov;R. Schifano;Bo Monemar;T. Paskova

  • The role of high-temperature island coalescence in the development of stresses in GaN films

    T. Böttcher;S. Einfeldt;S. Figge;R. Chierchia

  • Single-photon emission of CdSe quantum dots at temperatures up to 200 K

    K. Sebald;P. Michler;T. Passow;D. Hommel

  • In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

    S. Figge;T. Böttcher;S. Einfeldt;D. Hommel

  • E0 band‐gap energy and lattice constant of ternary Zn1−xMgxSe as functions of composition

    Unknown

  • Temperature dependence of the thermal expansion of GaN

    C. Roder;S. Einfeldt;S. Figge;D. Hommel

  • Composition mapping in InGaN by scanning transmission electron microscopy.

    Andreas Rosenauer;Thorsten Mehrtens;Knut Müller;Katharina Gries

  • SINGLE ZERO-DIMENSIONAL EXCITONS IN CDSE/ZNSE NANOSTRUCTURES

    T. Kümmell;R. Weigand;G. Bacher;A. Forchel

  • Evidence for Two Mg Related Acceptors in GaN

    Bo Monemar;Bo Monemar;P. P. Paskov;G. Pozina;C. Hemmingsson

  • Spectral diffusion of the exciton transition in a single self-organized quantum dot

    J. Seufert;R. Weigand;G. Bacher;T. Kümmell

  • Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures

    F. Gindele;U. Woggon;Wolfgang Werner Langbein;J. Hvam

  • Direct observation of free-exciton thermalization in quantum-well structures

    M. Umlauff;J. Hoffmann;H. Kalt;Wolfgang Werner Langbein

  • Anisotropic strain and phonon deformation potentials in GaN

    V. Darakchieva;T. Paskova;Mathias Schubert;H. Arwin

  • Quantum optical studies on individual acceptor bound excitons in a semiconductor.

    S. Strauf;P. Michler;M. Klude;D. Hommel

  • Temperature dependence of the thermal expansion of AlN

    Stephan Figge;Hanno Kröncke;Detlef Hommel;Boris M. Epelbaum

  • Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy

    A. Kaschner;H. Siegle;G. Kaczmarczyk;M. Straßburg

  • Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

    C. Roder;S. Einfeldt;S. Figge;T. Paskova

  • Analysis of the Defect Structure of Epitaxial GaN

    H. Heinke;V. Kirchner;S. Einfeldt;D. Hommel

  • Room temperature single photon emission from an epitaxially grown quantum dot

    O. Fedorych;C. Kruse;A. Ruban;D. Hommel

Frequent Co-Authors

Alfred Forchel
Alfred Forchel University of Würzburg
Andreas Rosenauer
Andreas Rosenauer University of Bremen
Bo Monemar
Bo Monemar Linköping University
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Mathias Schubert
Mathias Schubert University of Nebraska–Lincoln
James S. Speck
James S. Speck University of California, Santa Barbara
Heinz Kalt
Heinz Kalt Karlsruhe Institute of Technology
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Gene E. Ice
Gene E. Ice Oak Ridge National Laboratory
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg

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