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Materials Science

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49
Citations
8692
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428

Overview

Rachel A. Oliver is affiliated with the University of Cambridge in the United Kingdom and has a significant publication record in the fields of engineering, materials science, and physics and astronomy. Their research primarily focuses on semiconductor devices and materials, with substantial contributions to GaN-based semiconductor devices, Ga2O3 and related materials, and semiconductor quantum structures.

Their work spans multiple subfields, including electrical and electronic engineering, materials chemistry, condensed matter physics, electronic, optical and magnetic materials, as well as atomic and molecular physics and optics. These areas reflect a broad engagement with both fundamental and applied aspects of material science and device engineering.

Recent papers authored or co-authored by Oliver include:

  • "Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface," 2020, Nature Electronics
  • "Halide homogenization for low energy loss in 2-eV-bandgap perovskites and increased efficiency in all-perovskite triple-junction solar cells," 2023, Nature Energy
  • "Over 15% efficient wide-band-gap Cu(In,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering," 2021, Joule
  • "Understanding the Role of Grain Boundaries on Charge-Carrier and Ion Transport in Cs2AgBiBr6 Thin Films," 2021, Advanced Functional Materials
  • "Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond," 2020, ACS Applied Materials & Interfaces

Oliver frequently collaborates with a number of coauthors, such as Gunnar Kusch, Menno J. Kappers, D. J. Wallis, Martin Frentrup, and Saptarsi Ghosh. This network indicates an active engagement with other researchers in related areas of semiconductor and materials research.

Their research has been published in a range of journals and platforms, with multiple contributions to the Journal of Applied Physics, arXiv (Cornell University), Journal of Physics D Applied Physics, Apollo (University of Cambridge), and Applied Physics Letters. This diversity of publication venues demonstrates activity across both established peer-reviewed journals and preprint repositories.

Key topics covered by Oliver's research include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Chalcogenide semiconductor thin films
  • Semiconductor quantum structures and devices
  • Quantum dots synthesis and properties

Best Publications

  • Advances in AFM for the electrical characterization of semiconductors

    Rachel A Oliver

  • Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

    Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

  • Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

    D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver

  • Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface

    Baodan Zhao;Baodan Zhao;Yaxiao Lian;Linsong Cui;Giorgio Divitini

  • InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

    Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys

  • Atom probe tomography today

    Alfred Cerezo;Peter H. Clifton;Mark J. Galtrey;Colin J. Humphreys

  • The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

    S Hammersley;D Watson-Parris;P Dawson;M Godfrey

  • Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

    R.A. Oliver;M.J. Kappers;J. Sumner;R. Datta

  • Growth modes in heteroepitaxy of InGaN on GaN

    Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys;G. Andrew D. Briggs

  • Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

    M.J. Galtrey;R.A. Oliver;M.J. Kappers;C.J. Humphreys

  • Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

    M.J. Kappers;R. Datta;R.A. Oliver;F.D.G. Rayment

  • Halide homogenization for low energy loss in 2-eV-bandgap perovskites and increased efficiency in all-perovskite triple-junction solar cells

    Unknown

  • Microstructural origins of localization in InGaN quantum wells

    R.A. Oliver;S.E. Bennett;T. Zhu;D.J. Beesley

  • Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

    Nicole K. van der Laak;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

  • Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

    F. C.-P. Massabuau;S.-L. Sahonta;L. Trinh-Xuan;S. Rhode

  • Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot

    Anas F. Jarjour;Robert A. Taylor;Rachel A. Oliver;Menno J. Kappers

  • The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

    Philip Dawson;S Schulz;R. A. Oliver;M. J. Kappers

  • Low threshold, room-temperature microdisk lasers in the blue spectral range

    Igor Aharonovich;Alexander J Woolf;Kasey Joe Russell;Tongtong Zhu

  • Nanoscale solid-state quantum computing

    A. Ardavan;M. Austwick;S. C. Benjamin;G. A. D. Briggs

  • Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

    James W. Robinson;James H. Rice;Kwan H. Lee;Jong H. Na

  • Temporal variation in photoluminescence from single InGaN quantum dots

    James H. Rice;James W. Robinson;Anas Jarjour;Robert A. Taylor

  • Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

    S. Hammersley;M. J. Kappers;F. C.-P. Massabuau;S.-L. Sahonta

Frequent Co-Authors

Menno J. Kappers
Menno J. Kappers University of Cambridge
Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London
Robert A. Taylor
Robert A. Taylor University of New South Wales
G. A. D. Briggs
G. A. D. Briggs University of Oxford
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Michael P. Moody
Michael P. Moody University of Oxford
Igor Aharonovich
Igor Aharonovich University of Technology Sydney
Martin Kuball
Martin Kuball University of Bristol
Kiminori Kondo
Kiminori Kondo Japan Atomic Energy Agency

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