World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
49
Citations
8692
World Ranking
10550
National Ranking
428

Rachel A. Oliver publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Rachel A. Oliver sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 454 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Rachel A. Oliver D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Rachel A. Oliver sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Rachel A. Oliver is affiliated with the University of Cambridge in the United Kingdom and has a significant publication record in the fields of engineering, materials science, and physics and astronomy. Their research primarily focuses on semiconductor devices and materials, with substantial contributions to GaN-based semiconductor devices, Ga2O3 and related materials, and semiconductor quantum structures.

Their work spans multiple subfields, including electrical and electronic engineering, materials chemistry, condensed matter physics, electronic, optical and magnetic materials, as well as atomic and molecular physics and optics. These areas reflect a broad engagement with both fundamental and applied aspects of material science and device engineering.

Recent papers authored or co-authored by Oliver include:

  • "Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface," 2020, Nature Electronics
  • "Halide homogenization for low energy loss in 2-eV-bandgap perovskites and increased efficiency in all-perovskite triple-junction solar cells," 2023, Nature Energy
  • "Over 15% efficient wide-band-gap Cu(In,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering," 2021, Joule
  • "Understanding the Role of Grain Boundaries on Charge-Carrier and Ion Transport in Cs2AgBiBr6 Thin Films," 2021, Advanced Functional Materials
  • "Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond," 2020, ACS Applied Materials & Interfaces

Oliver frequently collaborates with a number of coauthors, such as Gunnar Kusch, Menno J. Kappers, D. J. Wallis, Martin Frentrup, and Saptarsi Ghosh. This network indicates an active engagement with other researchers in related areas of semiconductor and materials research.

Their research has been published in a range of journals and platforms, with multiple contributions to the Journal of Applied Physics, arXiv (Cornell University), Journal of Physics D Applied Physics, Apollo (University of Cambridge), and Applied Physics Letters. This diversity of publication venues demonstrates activity across both established peer-reviewed journals and preprint repositories.

Key topics covered by Oliver's research include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Chalcogenide semiconductor thin films
  • Semiconductor quantum structures and devices
  • Quantum dots synthesis and properties

Best Publications

  • Advances in AFM for the electrical characterization of semiconductors

    Rachel A Oliver

  • Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

    Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

  • Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

    D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver

  • Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface

    Baodan Zhao;Baodan Zhao;Yaxiao Lian;Linsong Cui;Giorgio Divitini

  • InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

    Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys

  • Atom probe tomography today

    Alfred Cerezo;Peter H. Clifton;Mark J. Galtrey;Colin J. Humphreys

  • The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

    S Hammersley;D Watson-Parris;P Dawson;M Godfrey

  • Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

    R.A. Oliver;M.J. Kappers;J. Sumner;R. Datta

  • Growth modes in heteroepitaxy of InGaN on GaN

    Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys;G. Andrew D. Briggs

  • Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

    M.J. Galtrey;R.A. Oliver;M.J. Kappers;C.J. Humphreys

  • Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

    M.J. Kappers;R. Datta;R.A. Oliver;F.D.G. Rayment

  • Halide homogenization for low energy loss in 2-eV-bandgap perovskites and increased efficiency in all-perovskite triple-junction solar cells

    Unknown

  • Microstructural origins of localization in InGaN quantum wells

    R.A. Oliver;S.E. Bennett;T. Zhu;D.J. Beesley

  • Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

    Nicole K. van der Laak;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

  • Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

    F. C.-P. Massabuau;S.-L. Sahonta;L. Trinh-Xuan;S. Rhode

  • Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot

    Anas F. Jarjour;Robert A. Taylor;Rachel A. Oliver;Menno J. Kappers

  • The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

    Philip Dawson;S Schulz;R. A. Oliver;M. J. Kappers

  • Low threshold, room-temperature microdisk lasers in the blue spectral range

    Igor Aharonovich;Alexander J Woolf;Kasey Joe Russell;Tongtong Zhu

  • Nanoscale solid-state quantum computing

    A. Ardavan;M. Austwick;S. C. Benjamin;G. A. D. Briggs

  • Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

    James W. Robinson;James H. Rice;Kwan H. Lee;Jong H. Na

  • Temporal variation in photoluminescence from single InGaN quantum dots

    James H. Rice;James W. Robinson;Anas Jarjour;Robert A. Taylor

  • Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

    S. Hammersley;M. J. Kappers;F. C.-P. Massabuau;S.-L. Sahonta

Frequent Co-Authors

Menno J. Kappers
Menno J. Kappers University of Cambridge
Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London
Robert A. Taylor
Robert A. Taylor University of New South Wales
G. A. D. Briggs
G. A. D. Briggs University of Oxford
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Michael P. Moody
Michael P. Moody University of Oxford
Igor Aharonovich
Igor Aharonovich University of Technology Sydney
Martin Kuball
Martin Kuball University of Bristol
Kiminori Kondo
Kiminori Kondo Japan Atomic Energy Agency

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