H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science H-index 53 Citations 8,402 296 World Ranking 4989 National Ranking 203

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of investigation include Wide-bandgap semiconductor, Quantum well, Optoelectronics, Photoluminescence and Condensed matter physics. His biological study spans a wide range of topics, including Quantum dot and Quantum dot laser. His studies deal with areas such as Molecular physics, Electron spectroscopy, Indium and Wavelength as well as Quantum well.

Menno J. Kappers works on Optoelectronics which deals in particular with Light-emitting diode. As a part of the same scientific family, Menno J. Kappers mostly works in the field of Photoluminescence, focusing on Scanning transmission electron microscopy and, on occasion, Length scale. His Condensed matter physics study incorporates themes from Transmission electron microscopy, Diffraction, Optics and Electron.

His most cited work include:

  • Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope (235 citations)
  • Defect‐Induced Ferromagnetism in Co‐doped ZnO (192 citations)
  • Optical and microstructural studies of InGaN∕GaN single-quantum-well structures (178 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Quantum well, Photoluminescence, Condensed matter physics and Metalorganic vapour phase epitaxy. His Optoelectronics research integrates issues from Sapphire and Epitaxy. His studies in Quantum well integrate themes in fields like Indium, Molecular physics, Transmission electron microscopy, Excitation and Electron.

His study explores the link between Photoluminescence and topics such as Quantum dot that cross with problems in Quantum dot laser. His Condensed matter physics research includes themes of Scanning transmission electron microscopy, Spectroscopy, Electric field, Diffraction and Alloy. His study focuses on the intersection of Metalorganic vapour phase epitaxy and fields such as Analytical chemistry with connections in the field of Doping.

He most often published in these fields:

  • Optoelectronics (46.95%)
  • Quantum well (39.34%)
  • Photoluminescence (27.66%)

What were the highlights of his more recent work (between 2015-2021)?

  • Quantum well (39.34%)
  • Optoelectronics (46.95%)
  • Condensed matter physics (26.40%)

In recent papers he was focusing on the following fields of study:

Menno J. Kappers focuses on Quantum well, Optoelectronics, Condensed matter physics, Photoluminescence and Gallium nitride. His study in Quantum well is interdisciplinary in nature, drawing from both Indium, Scanning transmission electron microscopy, Plane, Electron and Quantum efficiency. In the field of Optoelectronics, his study on Light-emitting diode overlaps with subjects such as Voltage droop.

Menno J. Kappers interconnects Alloy, Spectroscopy, Diffraction and Cathodoluminescence in the investigation of issues within Condensed matter physics. The Photoluminescence study combines topics in areas such as Spontaneous emission, Doping, Electric field, Molecular physics and Excitation. He combines subjects such as Europium and Acceptor with his study of Gallium nitride.

Between 2015 and 2021, his most popular works were:

  • The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells (51 citations)
  • Carrier localization in the vicinity of dislocations in InGaN (31 citations)
  • The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem (23 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary scientific interests are in Condensed matter physics, Quantum well, Optoelectronics, Photoluminescence and Molecular physics. His Condensed matter physics study integrates concerns from other disciplines, such as Gallium nitride, Single crystal, Spectroscopy, Raman spectroscopy and Diffraction. The concepts of his Quantum well study are interwoven with issues in Polar, Electron, Indium and Quantum efficiency.

As part of the same scientific family, Menno J. Kappers usually focuses on Indium, concentrating on Scanning transmission electron microscopy and intersecting with Dislocation and Crystallography. The study incorporates disciplines such as Wurtzite crystal structure and Emission spectrum in addition to Optoelectronics. In his work, Transmission electron microscopy is strongly intertwined with Metalorganic vapour phase epitaxy, which is a subfield of Analytical chemistry.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers.
Applied Physics Letters (2003)

333 Citations

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey.
Journal of Applied Physics (2005)

243 Citations

Defect‐Induced Ferromagnetism in Co‐doped ZnO

Neeraj Khare;Neeraj Khare;Menno J. Kappers;Ming Wei;Mark G. Blamire.
Advanced Materials (2006)

233 Citations

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys.
Applied Physics Letters (2007)

226 Citations

Critical thickness calculations for InGaN/GaN

D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys.
Journal of Crystal Growth (2007)

216 Citations

Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver.
Physical Review B (2011)

190 Citations

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys.
Applied Physics Letters (2003)

165 Citations

Understanding x-ray diffraction of nonpolar gallium nitride films

M. A. Moram;C. F. Johnston;J. L. Hollander;M. J. Kappers.
Journal of Applied Physics (2009)

149 Citations

Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Iestyn Pope;Peter Michael Smowton;Peter Blood;John Duncan Thomson.
Applied Physics Letters (2003)

149 Citations

Improvements in a-plane GaN crystal quality by a two-step growth process

J. L. Hollander;M. J. Kappers;C. McAleese;C. J. Humphreys.
Applied Physics Letters (2008)

142 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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