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Menno J. Kappers

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 59 7440 7192 291 275 448 11304

Menno J. Kappers publications per year

The chart shows the history of publications by Menno J. Kappers between 1988 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Menno J. Kappers published across 39 years, from 1988 to 2026, averaging 12 papers a year. Output peaked at 36 publications in 2010. 11 of the 467 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1988 to 2026. Vertical axis: number of publications, 0 to 36. Peak 36 publications in 2010. 1988: 1 publication 1989: 2 publications 1990: 0 publications 1991: 1 publication 1992: 0 publications 1993: 1 publication 1994: 1 publication 1995: 1 publication 1996: 4 publications 1997: 4 publications 1998: 3 publications 1999: 3 publications 2000: 0 publications 2001: 2 publications 2002: 3 publications 2003: 23 publications 2004: 18 publications 2005: 19 publications 2006: 18 publications 2007: 30 publications 2008: 34 publications 2009: 29 publications 2010: 36 publications 2011: 21 publications 2012: 18 publications 2013: 23 publications 2014: 25 publications 2015: 20 publications 2016: 23 publications 2017: 17 publications 2018: 14 publications 2019: 8 publications 2020: 9 publications 2021: 12 publications 2022: 8 publications 2023: 14 publications 2024: 11 publications 2025: 9 publications 2026: 2 publications
1988 2026

467 publications in total across all disciplines

View publications per year as a table
Menno J. Kappers: publications per year, 1988 to 2026
Year Publications
1988 1
1989 2
1990 0
1991 1
1992 0
1993 1
1994 1
1995 1
1996 4
1997 4
1998 3
1999 3
2000 0
2001 2
2002 3
2003 23
2004 18
2005 19
2006 18
2007 30
2008 34
2009 29
2010 36
2011 21
2012 18
2013 23
2014 25
2015 20
2016 23
2017 17
2018 14
2019 8
2020 9
2021 12
2022 8
2023 14
2024 11
2025 9
2026 2
Total 467
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Menno J. Kappers publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Menno J. Kappers sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 430–449 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 448 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246 448
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Menno J. Kappers D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Menno J. Kappers sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 58–59 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610 59
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Menno J. Kappers is affiliated with the University of Cambridge in the United Kingdom. Their research principally centers on semiconductor materials and devices, with a particular focus on gallium nitride (GaN)-based semiconductor devices and materials. They have also contributed to studies involving Ga2O3 and related materials, semiconductor quantum structures and devices, metal and thin film mechanics, zinc oxide doping and properties, and diamond and carbon-based materials research.

The primary fields of study in Menno J. Kappers's work include engineering, physics and astronomy, and materials science. Subfields of study evident in their publications highlight condensed matter physics, electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, and atomic and molecular physics and optics.

Their recent publications demonstrate active involvement in research on GaN heterostructures and quantum wells, focusing on carrier dynamics, defect structures, and material properties. Notable papers include:

  • Polar (In,Ga)N/GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the "Green Gap" Problem, 2020, Physical Review Applied
  • Alloy segregation at stacking faults in zincblende GaN heterostructures, 2020, Journal of Applied Physics
  • Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon, 2021, ACS Applied Electronic Materials
  • Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence, 2021, Nanoscale
  • Defect structures in (001) zincblende GaN/3C-SiC nucleation layers, 2021, Journal of Applied Physics

Frequent co-authors collaborating with Menno J. Kappers include:

  • Rachel A. Oliver
  • D. J. Wallis
  • Martin Frentrup
  • Saptarsi Ghosh
  • Simon M. Fairclough

Their work has been published extensively in several scientific journals, with repeated contributions to:

  • Journal of Applied Physics
  • Journal of Physics D: Applied Physics
  • Applied Physics Letters
  • SSRN Electronic Journal
  • Ultramicroscopy

Best Publications

  • Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

    T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers

  • Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

    D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey

  • Critical thickness calculations for InGaN/GaN

    D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys

  • Defect‐Induced Ferromagnetism in Co‐doped ZnO

    Neeraj Khare;Neeraj Khare;Menno J. Kappers;Ming Wei;Mark G. Blamire

  • Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

    Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

  • Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

    D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver

  • Understanding x-ray diffraction of nonpolar gallium nitride films

    M. A. Moram;C. F. Johnston;J. L. Hollander;M. J. Kappers

  • InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

    Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys

  • Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

    Iestyn Pope;Peter Michael Smowton;Peter Blood;John Duncan Thomson

  • On the origin of threading dislocations in GaN films

    M. A. Moram;C. S. Ghedia;D. V. S. Rao;J. S. Barnard

  • The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

    S Hammersley;D Watson-Parris;P Dawson;M Godfrey

  • Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

    R.A. Oliver;M.J. Kappers;J. Sumner;R. Datta

  • Improvements in a-plane GaN crystal quality by a two-step growth process

    J. L. Hollander;M. J. Kappers;C. McAleese;C. J. Humphreys

  • Equilibrium critical thickness for misfit dislocations in III-nitrides

    David Holec;Yucheng Zhang;D. V. Sridhara Rao;Menno J. Kappers

  • Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

    M. E. Vickers;M. J. Kappers;T. M. Smeeton;E. J. Thrush

  • Growth modes in heteroepitaxy of InGaN on GaN

    Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys;G. Andrew D. Briggs

  • Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

    M.J. Galtrey;R.A. Oliver;M.J. Kappers;C.J. Humphreys

  • In-plane imperfections in GaN studied by x-ray diffraction

    M E Vickers;M J Kappers;R Datta;C McAleese

  • Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

    M.J. Kappers;R. Datta;R.A. Oliver;F.D.G. Rayment

  • Hydrogen as a Modifier of the Structure and Electronic Properties of Platinum in Acidic Zeolite LTL: A Combined Infrared and X-ray Absorption Spectroscopy Study

    Marius Vaarkamp;Barbara L. Mojet;Menno J. Kappers;Jeff T. Miller

  • Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

    Nicole K. van der Laak;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

Frequent Co-Authors

Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London
Rachel A. Oliver
Rachel A. Oliver University of Cambridge
Robert A. Taylor
Robert A. Taylor University of New South Wales
Rafal E. Dunin-Borkowski
Rafal E. Dunin-Borkowski Forschungszentrum Jülich
Michael P. Moody
Michael P. Moody University of Oxford
G. A. D. Briggs
G. A. D. Briggs University of Oxford
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Ana M. Sanchez
Ana M. Sanchez University of Warwick
Yasuhiko Arakawa
Yasuhiko Arakawa University of Tokyo
Alexander Belyaev
Alexander Belyaev University of Southampton

External Links

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Best Scientists Citing Menno J. Kappers

Colin J. Humphreys

Colin J. Humphreys

Queen Mary University of London

Publications: 57

Rachel A. Oliver

Rachel A. Oliver

University of Cambridge

Publications: 51

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 49

Michael Kneissl

Michael Kneissl

Technical University of Berlin

Publications: 46

Hiroshi Amano

Hiroshi Amano

Nagoya University

Publications: 41

Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

Publications: 39

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 38

Tao Wang

Tao Wang

Stanford University

Publications: 34

Nicolas Grandjean

Nicolas Grandjean

École Polytechnique Fédérale de Lausanne

Publications: 34

Detlef Hommel

Detlef Hommel

University of Wrocław

Publications: 32

Satoshi Kamiyama

Satoshi Kamiyama

Meijo University

Publications: 29

Robert A. Taylor

Robert A. Taylor

University of New South Wales

Publications: 29

Yuh-Renn Wu

Yuh-Renn Wu

National Taiwan University

Publications: 27

Eva Monroy

Eva Monroy

Grenoble Alpes University

Publications: 27

Hao-Chung Kuo

Hao-Chung Kuo

National Yang Ming Chiao Tung University

Publications: 27

Yue Hao

Yue Hao

Xidian University

Publications: 26

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