The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Menno J. Kappers sits on this spectrum.
This scientist: 448 publications — 82nd percentile
82% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Menno J. Kappers sits on this spectrum.
This scientist: 59 D-Index — 44th percentile
44% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Menno J. Kappers is affiliated with the University of Cambridge in the United Kingdom. Their research principally centers on semiconductor materials and devices, with a particular focus on gallium nitride (GaN)-based semiconductor devices and materials. They have also contributed to studies involving Ga2O3 and related materials, semiconductor quantum structures and devices, metal and thin film mechanics, zinc oxide doping and properties, and diamond and carbon-based materials research.
The primary fields of study in Menno J. Kappers's work include engineering, physics and astronomy, and materials science. Subfields of study evident in their publications highlight condensed matter physics, electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, and atomic and molecular physics and optics.
Their recent publications demonstrate active involvement in research on GaN heterostructures and quantum wells, focusing on carrier dynamics, defect structures, and material properties. Notable papers include:
Frequent co-authors collaborating with Menno J. Kappers include:
Their work has been published extensively in several scientific journals, with repeated contributions to:
T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers
D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey
D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys
Neeraj Khare;Neeraj Khare;Menno J. Kappers;Ming Wei;Mark G. Blamire
Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys
D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver
M. A. Moram;C. F. Johnston;J. L. Hollander;M. J. Kappers
Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys
Iestyn Pope;Peter Michael Smowton;Peter Blood;John Duncan Thomson
M. A. Moram;C. S. Ghedia;D. V. S. Rao;J. S. Barnard
S Hammersley;D Watson-Parris;P Dawson;M Godfrey
R.A. Oliver;M.J. Kappers;J. Sumner;R. Datta
J. L. Hollander;M. J. Kappers;C. McAleese;C. J. Humphreys
David Holec;Yucheng Zhang;D. V. Sridhara Rao;Menno J. Kappers
M. E. Vickers;M. J. Kappers;T. M. Smeeton;E. J. Thrush
Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys;G. Andrew D. Briggs
M.J. Galtrey;R.A. Oliver;M.J. Kappers;C.J. Humphreys
M E Vickers;M J Kappers;R Datta;C McAleese
M.J. Kappers;R. Datta;R.A. Oliver;F.D.G. Rayment
Marius Vaarkamp;Barbara L. Mojet;Menno J. Kappers;Jeff T. Miller
Nicole K. van der Laak;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys
If you think any of the details on this page are incorrect, let us know.
Sun Yat-sen University
South China University of Technology
University of Pisa
National Taiwan University
Advanced Telecommunications Research Institute International
University of Fribourg
University of Tübingen
University of California, San Diego
Cranfield University
MIT
University of Bern
Tufts University
University of Manchester
Harvard University
Chinese University of Hong Kong
Kansas State University