2026 Menno J. Kappers: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	59	7442	7195	291	275	448	11304

Overview

Menno J. Kappers is affiliated with the University of Cambridge in the United Kingdom. Their research principally centers on semiconductor materials and devices, with a particular focus on gallium nitride (GaN)-based semiconductor devices and materials. They have also contributed to studies involving Ga2O3 and related materials, semiconductor quantum structures and devices, metal and thin film mechanics, zinc oxide doping and properties, and diamond and carbon-based materials research.

The primary fields of study in Menno J. Kappers's work include engineering, physics and astronomy, and materials science. Subfields of study evident in their publications highlight condensed matter physics, electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, and atomic and molecular physics and optics.

Their recent publications demonstrate active involvement in research on GaN heterostructures and quantum wells, focusing on carrier dynamics, defect structures, and material properties. Notable papers include:

Polar (In,Ga)N/GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the "Green Gap" Problem, 2020, Physical Review Applied
Alloy segregation at stacking faults in zincblende GaN heterostructures, 2020, Journal of Applied Physics
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon, 2021, ACS Applied Electronic Materials
Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence, 2021, Nanoscale
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers, 2021, Journal of Applied Physics

Frequent co-authors collaborating with Menno J. Kappers include:

Rachel A. Oliver
D. J. Wallis
Martin Frentrup
Saptarsi Ghosh
Simon M. Fairclough

Their work has been published extensively in several scientific journals, with repeated contributions to:

Journal of Applied Physics
Journal of Physics D: Applied Physics
Applied Physics Letters
SSRN Electronic Journal
Ultramicroscopy

Best Publications

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers

349
Citations
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey

279
Citations
Critical thickness calculations for InGaN/GaN

D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys

270
Citations
Defect‐Induced Ferromagnetism in Co‐doped ZnO

Neeraj Khare;Neeraj Khare;Menno J. Kappers;Ming Wei;Mark G. Blamire

260
Citations
Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

236
Citations
Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver

219
Citations
Understanding x-ray diffraction of nonpolar gallium nitride films

M. A. Moram;C. F. Johnston;J. L. Hollander;M. J. Kappers

181
Citations
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys

177
Citations
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Iestyn Pope;Peter Michael Smowton;Peter Blood;John Duncan Thomson

155
Citations
On the origin of threading dislocations in GaN films

M. A. Moram;C. S. Ghedia;D. V. S. Rao;J. S. Barnard

152
Citations
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

S Hammersley;D Watson-Parris;P Dawson;M Godfrey

151
Citations
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

R.A. Oliver;M.J. Kappers;J. Sumner;R. Datta

150
Citations
Improvements in a-plane GaN crystal quality by a two-step growth process

J. L. Hollander;M. J. Kappers;C. McAleese;C. J. Humphreys

147
Citations
Equilibrium critical thickness for misfit dislocations in III-nitrides

David Holec;Yucheng Zhang;D. V. Sridhara Rao;Menno J. Kappers

147
Citations
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

M. E. Vickers;M. J. Kappers;T. M. Smeeton;E. J. Thrush

145
Citations
Growth modes in heteroepitaxy of InGaN on GaN

Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys;G. Andrew D. Briggs

130
Citations
Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

M.J. Galtrey;R.A. Oliver;M.J. Kappers;C.J. Humphreys

129
Citations
In-plane imperfections in GaN studied by x-ray diffraction

M E Vickers;M J Kappers;R Datta;C McAleese

126
Citations
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

M.J. Kappers;R. Datta;R.A. Oliver;F.D.G. Rayment

123
Citations
Hydrogen as a Modifier of the Structure and Electronic Properties of Platinum in Acidic Zeolite LTL: A Combined Infrared and X-ray Absorption Spectroscopy Study

Marius Vaarkamp;Barbara L. Mojet;Menno J. Kappers;Jeff T. Miller

116
Citations
Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

Nicole K. van der Laak;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

113
Citations