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Satoshi Kamiyama

Satoshi Kamiyama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
11442
World Ranking
2770
National Ranking
97

Materials Science

D-Index
52
Citations
11895
World Ranking
9467
National Ranking
560

Overview

Satoshi Kamiyama is affiliated with Meijo University in Japan and has contributed extensively to the fields of Physics and Astronomy, Materials Science, and Engineering. Their research primarily focuses on condensed matter physics, materials chemistry, and electronic, optical, and magnetic materials. They have also worked within electrical and electronic engineering and biomedical engineering subfields.

The scientist's work covers a variety of topics related to semiconductor devices and materials. Key areas of their research include:

  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Semiconductor quantum structures and devices
  • Metal and thin film mechanics
  • Nanowire synthesis and applications
  • Semiconductor materials and devices

Their publication record is notable in several established venues, where they have published multiple papers over the years. Frequent publication venues include:

  • Applied Physics Express
  • physica status solidi (a)
  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • Journal of Crystal Growth

Recent papers reflect their focus on AlGaN-based ultraviolet-B laser diodes and related optical materials and devices. Selected recent publications include:

  • "Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire," 2020, Applied Physics Express
  • "AlGaN-based UV-B laser diode with a high optical confinement factor," 2021, Applied Physics Letters
  • "Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping," 2020, Applied Physics Express
  • "Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers," 2020, Applied Physics Express
  • "RGB monolithic GaInN-based μLED arrays connected via tunnel junctions," 2023, Applied Physics Express

Collaboration is a significant aspect of their work, reflected by frequent co-authors such as:

  • Motoaki Iwaya
  • Tetsuya Takeuchi
  • Isamu Akasaki
  • Sho Iwayama
  • Weifang Lu

Best Publications

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

    Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  • Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

    Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu

  • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

    Kazuyoshi Iida;Takeshi Kawashima;Atsushi Miyazaki;Hideki Kasugai

  • Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

    Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  • Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition

    Satoshi Kamiyama;Pierre‐Yves Lesaicherre;Hiroshi Suzuki;Akira Sakai

  • High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride.

    Hiroyuki Kinoshita;Shigeki Otani;Satoshi Kamiyama;Hiroshi Amano

  • Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

    Cyril Pernot;Shinya Fukahori;Tetsuhiko Inazu;Takehiko Fujita

  • Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

    Masataka Imura;Kiyotaka Nakano;Gou Narita;Naoki Fujimoto

  • Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

    Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • Semiconductor light emitting element and method for fabricating the same

    Satoshi Kamiyama;Masakatsu Suzuki;Takeshi Uenoyama;Kiyoshi Ohnaka

  • High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

    M. Iwaya;S. Terao;T. Sano;S. Takanami

  • UV Light‐Emitting Diode Fabricated on Hetero‐ELO‐Grown Al0.22Ga0.78N with Low Dislocation Density

    S. Kamiyama;M. Iwaya;S. Takanami;S. Terao

  • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

    Yousuke Kuwahara;Takahiro Fujii;Toru Sugiyama;Daisuke Iida

  • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

    S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

    Myunghee Kim;Takehiko Fujita;Shinya Fukahori;Tetsuhiko Inazu

  • Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

    Kazuki Ikeyama;Yugo Kozuka;Kenjo Matsui;Shotaro Yoshida

  • Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

    M. Imura;K. Nakano;T. Kitano;N. Fujimoto

  • Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

    Kosuke Sato;Kosuke Sato;Shinji Yasue;Kazuki Yamada;Shunya Tanaka

Frequent Co-Authors

Motoaki Iwaya
Motoaki Iwaya Meijo University
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
isamu akasaki
isamu akasaki Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Akira Yoshikawa
Akira Yoshikawa Tohoku University
Bo Monemar
Bo Monemar Linköping University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Fernando Ponce
Fernando Ponce Arizona State University
Shigeki Otani
Shigeki Otani National Institute for Materials Science

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