World's Best Scientists 2026 revealed!
Satoshi Kamiyama

Satoshi Kamiyama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
11442
World Ranking
2770
National Ranking
97

Materials Science

D-Index
52
Citations
11895
World Ranking
9465
National Ranking
560

Satoshi Kamiyama publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Satoshi Kamiyama sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 759 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Satoshi Kamiyama D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Satoshi Kamiyama sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Satoshi Kamiyama is affiliated with Meijo University in Japan and has contributed extensively to the fields of Physics and Astronomy, Materials Science, and Engineering. Their research primarily focuses on condensed matter physics, materials chemistry, and electronic, optical, and magnetic materials. They have also worked within electrical and electronic engineering and biomedical engineering subfields.

The scientist's work covers a variety of topics related to semiconductor devices and materials. Key areas of their research include:

  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Semiconductor quantum structures and devices
  • Metal and thin film mechanics
  • Nanowire synthesis and applications
  • Semiconductor materials and devices

Their publication record is notable in several established venues, where they have published multiple papers over the years. Frequent publication venues include:

  • Applied Physics Express
  • physica status solidi (a)
  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • Journal of Crystal Growth

Recent papers reflect their focus on AlGaN-based ultraviolet-B laser diodes and related optical materials and devices. Selected recent publications include:

  • "Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire," 2020, Applied Physics Express
  • "AlGaN-based UV-B laser diode with a high optical confinement factor," 2021, Applied Physics Letters
  • "Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping," 2020, Applied Physics Express
  • "Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers," 2020, Applied Physics Express
  • "RGB monolithic GaInN-based μLED arrays connected via tunnel junctions," 2023, Applied Physics Express

Collaboration is a significant aspect of their work, reflected by frequent co-authors such as:

  • Motoaki Iwaya
  • Tetsuya Takeuchi
  • Isamu Akasaki
  • Sho Iwayama
  • Weifang Lu

Best Publications

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

    Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  • Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

    Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu

  • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

    Kazuyoshi Iida;Takeshi Kawashima;Atsushi Miyazaki;Hideki Kasugai

  • Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

    Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  • Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition

    Satoshi Kamiyama;Pierre‐Yves Lesaicherre;Hiroshi Suzuki;Akira Sakai

  • High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride.

    Hiroyuki Kinoshita;Shigeki Otani;Satoshi Kamiyama;Hiroshi Amano

  • Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

    Cyril Pernot;Shinya Fukahori;Tetsuhiko Inazu;Takehiko Fujita

  • Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

    Masataka Imura;Kiyotaka Nakano;Gou Narita;Naoki Fujimoto

  • Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

    Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • Semiconductor light emitting element and method for fabricating the same

    Satoshi Kamiyama;Masakatsu Suzuki;Takeshi Uenoyama;Kiyoshi Ohnaka

  • High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

    M. Iwaya;S. Terao;T. Sano;S. Takanami

  • UV Light‐Emitting Diode Fabricated on Hetero‐ELO‐Grown Al0.22Ga0.78N with Low Dislocation Density

    S. Kamiyama;M. Iwaya;S. Takanami;S. Terao

  • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

    Yousuke Kuwahara;Takahiro Fujii;Toru Sugiyama;Daisuke Iida

  • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

    S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

    Myunghee Kim;Takehiko Fujita;Shinya Fukahori;Tetsuhiko Inazu

  • Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

    Kazuki Ikeyama;Yugo Kozuka;Kenjo Matsui;Shotaro Yoshida

  • Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

    M. Imura;K. Nakano;T. Kitano;N. Fujimoto

  • Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

    Kosuke Sato;Kosuke Sato;Shinji Yasue;Kazuki Yamada;Shunya Tanaka

Frequent Co-Authors

Motoaki Iwaya
Motoaki Iwaya Meijo University
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
isamu akasaki
isamu akasaki Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Akira Yoshikawa
Akira Yoshikawa Tohoku University
Bo Monemar
Bo Monemar Linköping University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Fernando Ponce
Fernando Ponce Arizona State University
Shigeki Otani
Shigeki Otani National Institute for Materials Science

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