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71
Citations
19406
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4221
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Overview

Fernando Ponce is a researcher affiliated with Arizona State University in the United States. Their work primarily focuses on engineering, physics and astronomy, and materials science, with a significant portion of their research dedicated to electrical and electronic engineering, condensed matter physics, and materials chemistry.

The scientist's research centers on semiconductor devices and materials, particularly GaN-based technologies. Other main topics include semiconductor materials and devices, metal and thin film mechanics, Ga2O3 and related materials, ZnO doping and properties, silicon carbide semiconductor technologies, and diamond and carbon-based materials research.

Prominent recent papers by Fernando Ponce include the following:

  • GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD, 2020, IEEE Transactions on Electron Devices
  • Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress, 2021, Materials Today
  • The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices, 2021, Applied Physics Letters
  • Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films, 2020, Applied Physics Letters
  • GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications, 2023, IEEE Transactions on Electron Devices

Frequent coauthors in Fernando Ponce's collaborations include Hanxiao Liu, Houqiang Fu, Kai Fu, Po-Yi Su, and Yuji Zhao.

The author's publications are found predominantly in the following venues:

  • Journal of Applied Physics
  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • Materials Today
  • Diamond and Related Materials

Fernando Ponce has contributed to book publications as well, including a notable work titled Gallium Nitride and Related Materials scheduled for publication by Springer International Publishing in 2025.

Best Publications

  • Nitride-based semiconductors for blue and green light-emitting devices

    F. A. Ponce;D. P. Bour

  • High dislocation densities in high efficiency GaN‐based light‐emitting diodes

    S. D. Lester;F. A. Ponce;M. G. Craford;D. A. Steigerwald

  • Defects in single-crystal silicon induced by hydrogenation

    N. M. P Johnson;F. A. Ponce;R. A. Street;R. J. Nemanich

  • Spatial distribution of the luminescence in GaN thin films

    F. A. Ponce;D. P. Bour;W. Götz;P. J. Wright

  • Luminescence from stacking faults in gallium nitride

    R. Liu;A. Bell;Fernando Ponce;C. Q. Chen

  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

    H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson

  • Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

    F. A. Ponce;D. P. Bour;W. T. Young;M. Saunders

  • Epitaxial MgO on Si(001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition

    D. K. Fork;D. K. Fork;F. A. Ponce;J. C. Tramontana;T. H. Geballe

  • Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

    D. Cherns;S. J. Henley;Fernando Ponce

  • Microstructure of GaN epitaxy on SiC using AlN buffer layers

    F. A. Ponce;B. S. Krusor;J. S. Major;W. E. Plano

  • Defects and Interfaces in GaN Epitaxy

    F.A. Ponce

  • Slip systems and misfit dislocations in InGaN epilayers

    S. Srinivasan;L. Geng;R. Liu;Fernando Ponce

  • Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

    F. A. Ponce;D. Cherns;W. T. Young;J. W. Steeds

  • Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

    Suk Choi;Hee Jin Kim;Seong-Soo Kim;Jianping Liu

  • Self‐limiting oxidation of Si nanowires

    H. I. Liu;D. K. Biegelsen;N. M. Johnson;F. A. Ponce

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Microstructure and electronic properties of InGaN alloys

    Fernando Ponce;S. Srinivasan;A. Bell;L. Geng

  • Solid State Light Emitting Device

    Fernando A. Ponce;Sridhar Srinivasan;Hiromasa Omiya

  • Initial stages of epitaxial growth of GaAs on (100) silicon

    D. K. Biegelsen;F. A. Ponce;A. J. Smith;J. C. Tramontana

  • Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

    F. A. Ponce;J. S. Major;W. E. Plano;D. F. Welch

Frequent Co-Authors

Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Hiroshi Amano
Hiroshi Amano Nagoya University
David K. Fork
David K. Fork Palo Alto Research Center
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
T. H. Geballe
T. H. Geballe Stanford University
Takashi Mukai
Takashi Mukai National Institute of Advanced Industrial Science and Technology
Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg

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