World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
42
Citations
7209
World Ranking
6555
National Ranking
1794

Jae-Hyun Ryou publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Jae-Hyun Ryou sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 293 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Jae-Hyun Ryou D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Jae-Hyun Ryou sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 42 D-Index — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Jae-Hyun Ryou is affiliated with the University of Houston in the United States. Their research primarily spans the fields of Engineering and Materials Science, with a significant focus on Electrical and Electronic Engineering, Biomedical Engineering, Condensed Matter Physics, Materials Chemistry, and Electronic, Optical and Magnetic Materials as subfields of study.

Their scientific work covers core topics including GaN-based semiconductor devices and materials, Acoustic Wave Resonator Technologies, Advanced Sensor and Energy Harvesting Materials, Metal and Thin Film Mechanics, Ga2O3 and related materials, ZnO doping and properties, and solar cell performance optimization.

Ryou's recent papers reflect these interests and include:

  • Piezoelectric pressure sensor based on flexible gallium nitride thin film for harsh-environment and high-temperature applications (2020, Sensors and Actuators A Physical)
  • Highly-Sensitive Skin-Attachable Eye-Movement Sensor Using Flexible Nonhazardous Piezoelectric Thin Film (2020, Advanced Functional Materials)
  • Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide-Bandgap Single-Crystalline AlN Thin Films (2022, Advanced Functional Materials)
  • Biocompatible composite thin-film wearable piezoelectric pressure sensor for monitoring of physiological and muscle motions (2022, Soft Science)
  • High-Performance Color-Converted Full-Color Micro-LED Arrays (2020, Applied Sciences)

They have published extensively in several venues, with the most frequent publication venues being:

  • Advanced Functional Materials
  • Applied Physics Letters
  • Soft Science
  • Applied Sciences
  • Advanced Healthcare Materials

Collaboration is a notable aspect of Ryou's work. Frequent coauthors include Nam-In Kim, Sara Pouladi, Mina Moradnia, Min-Ki Kwon, and Xiaohang Li.

Best Publications

  • Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

    Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou

  • Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

    Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner

  • New Insight into Ni-Rich Layered Structure for Next-Generation Li Rechargeable Batteries

    Wontae Lee;Shoaib Muhammad;Taewhan Kim;Hyunchul Kim

  • Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

    Sheng Xu;Chen Xu;Ying Liu;Youfan Hu

  • Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

    Suk Choi;Hee Jin Kim;Seong-Soo Kim;Jianping Liu

  • Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

    J. P. Liu;J.-H. Ryou;R. D. Dupuis;J. Han

  • Photonic crystal nanobeam lasers

    Y. Zhang;M. Khan;Y. Huang;J. Ryou

  • GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

    J. B. Limb;D. Yoo;J. H. Ryou;W. Lee

  • Density-controlled growth of aligned ZnO nanowires sharing a common contact : A simple, low-cost, and mask-free technique for large-scale applications

    Xudong Wang;Jinhui Song;Christopher J. Summers;Jae Hyun Ryou

  • Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

    Hee Jin Kim;Suk Choi;Seong-Soo Kim;Jae-Hyun Ryou

  • Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator

    Jie Chen;Seung Kyu Oh;Seung Kyu Oh;Noor Nabulsi;Heidi Johnson

  • Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD

    Shyh-Chiang Shen;Yun Zhang;Dongwon Yoo;Jae-Boum Limb

  • Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

    Suk Choi;Suk Choi;Mi-Hee Ji;Jeomoh Kim;Hee Jin Kim;Hee Jin Kim

  • Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

    Zachary Lochner;Tsung-Ting Kao;Yuh-Shiuan Liu;Xiao-Hang Li

  • Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

    Yun Zhang;Shyh-Chiang Shen;Hee Jin Kim;Suk Choi

  • Piezoelectric pressure sensor based on flexible gallium nitride thin film for harsh-environment and high-temperature applications

    Nam-In Kim;Yu-Li Chang;Jie Chen;Jie Chen;Tanner Barbee

  • Electrical characteristics of contacts to thin film N-polar n-type GaN

    Hyunsoo Kim;Hyunsoo Kim;Jae Hyun Ryou;Russell D. Dupuis;Sung Nam Lee

  • High Durable, Biocompatible, and Flexible Piezoelectric Pulse Sensor Using Single-Crystalline III-N Thin Film

    Jie Chen;Haoran Liu;Weijie Wang;Weijie Wang;Noor Nabulsi

  • Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

    J. H. Ryou;W. Lee;J. Limb;D. Yoo;D. Yoo

  • Nanostructured-NiO/Si heterojunction photodetector

    Bhaskar Parida;Seongjun Kim;Munsik Oh;Seonghoon Jung

  • Bandgap bowing in BGaN thin films

    A. Ougazzaden;S. Gautier;T. Moudakir;Z. Djebbour

Frequent Co-Authors

Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Fernando Ponce
Fernando Ponce Arizona State University
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Joon Seop Kwak
Joon Seop Kwak Sunchon National University
Shun Lien Chuang
Shun Lien Chuang University of Illinois at Urbana-Champaign
Milton Feng
Milton Feng University of Illinois at Urbana-Champaign
Peter M. Asbeck
Peter M. Asbeck University of California, San Diego
Federico Capasso
Federico Capasso Harvard University
Marko Loncar
Marko Loncar Harvard University

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