Jae-Hyun Ryou

Overview

Best Publications

• Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

  Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou

  307
  Citations

• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

  Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner

  306
  Citations

• New Insight into Ni-Rich Layered Structure for Next-Generation Li Rechargeable Batteries

  Wontae Lee;Shoaib Muhammad;Taewhan Kim;Hyunchul Kim

  281
  Citations

• Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

  Sheng Xu;Chen Xu;Ying Liu;Youfan Hu

  265
  Citations

• Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

  Suk Choi;Hee Jin Kim;Seong-Soo Kim;Jianping Liu

  254
  Citations

• Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

  J. P. Liu;J.-H. Ryou;R. D. Dupuis;J. Han

  202
  Citations

• Photonic crystal nanobeam lasers

  Y. Zhang;M. Khan;Y. Huang;J. Ryou

  150
  Citations

• GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

  J. B. Limb;D. Yoo;J. H. Ryou;W. Lee

  149
  Citations

• Density-controlled growth of aligned ZnO nanowires sharing a common contact : A simple, low-cost, and mask-free technique for large-scale applications

  Xudong Wang;Jinhui Song;Christopher J. Summers;Jae Hyun Ryou

  146
  Citations

• Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

  Hee Jin Kim;Suk Choi;Seong-Soo Kim;Jae-Hyun Ryou

  122
  Citations

• Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator

  Jie Chen;Seung Kyu Oh;Seung Kyu Oh;Noor Nabulsi;Heidi Johnson

  115
  Citations

• Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD

  Shyh-Chiang Shen;Yun Zhang;Dongwon Yoo;Jae-Boum Limb

  105
  Citations

• Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

  Suk Choi;Suk Choi;Mi-Hee Ji;Jeomoh Kim;Hee Jin Kim;Hee Jin Kim

  101
  Citations

• Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

  Zachary Lochner;Tsung-Ting Kao;Yuh-Shiuan Liu;Xiao-Hang Li

  99
  Citations

• Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

  Yun Zhang;Shyh-Chiang Shen;Hee Jin Kim;Suk Choi

  99
  Citations

• Piezoelectric pressure sensor based on flexible gallium nitride thin film for harsh-environment and high-temperature applications

  Nam-In Kim;Yu-Li Chang;Jie Chen;Jie Chen;Tanner Barbee

  97
  Citations

• Electrical characteristics of contacts to thin film N-polar n-type GaN

  Hyunsoo Kim;Hyunsoo Kim;Jae Hyun Ryou;Russell D. Dupuis;Sung Nam Lee

  95
  Citations

• High Durable, Biocompatible, and Flexible Piezoelectric Pulse Sensor Using Single-Crystalline III-N Thin Film

  Jie Chen;Haoran Liu;Weijie Wang;Weijie Wang;Noor Nabulsi

  91
  Citations

• Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

  J. H. Ryou;W. Lee;J. Limb;D. Yoo;D. Yoo

  81
  Citations

• Nanostructured-NiO/Si heterojunction photodetector

  Bhaskar Parida;Seongjun Kim;Munsik Oh;Seonghoon Jung

  79
  Citations

• Bandgap bowing in BGaN thin films

  A. Ougazzaden;S. Gautier;T. Moudakir;Z. Djebbour

  75
  Citations