2007 - Member of the National Academy of Engineering For contributions to heterojunction bipolar transistor and integrated circuit technology.
2003 - IEEE David Sarnoff Award "For development and applications of GaAs-based heterojunction bipolar transistors."
2000 - IEEE Fellow For development of heterostructure bipolar transistors and applications.
His main research concerns Electrical engineering, Amplifier, Electronic engineering, Optoelectronics and RF power amplifier. His Amplifier study combines topics in areas such as Radio frequency and Linearity. The concepts of his Electronic engineering study are interwoven with issues in Delta-sigma modulation, Transistor array, Predistortion and Orthogonal frequency-division multiplexing.
His Optoelectronics research is multidisciplinary, relying on both Transistor, MOSFET and Nitride. His RF power amplifier research integrates issues from Transmitter and Baseband. His research in Power-added efficiency intersects with topics in Switched-mode power supply, Current sense amplifier, Power gain and Electrical efficiency.
Peter M. Asbeck mostly deals with Electrical engineering, Amplifier, Optoelectronics, Electronic engineering and RF power amplifier. All of his Electrical engineering and CMOS, Power bandwidth, Bandwidth, Transmitter and Radio frequency investigations are sub-components of the entire Electrical engineering study. Amplifier and Linearity are commonly linked in his work.
Peter M. Asbeck has included themes like Heterojunction bipolar transistor, Transistor and Bipolar junction transistor in his Optoelectronics study. He interconnects Baseband, Signal, Modulation and Wireless in the investigation of issues within Electronic engineering. His work on Switched-mode power supply expands to the thematically related RF power amplifier.
His scientific interests lie mostly in Amplifier, Electrical engineering, Electronic engineering, CMOS and RF power amplifier. His Amplifier research includes elements of Optoelectronics, Transistor and Linearity. His Optoelectronics research is multidisciplinary, incorporating elements of Transconductance and Graphene.
His Electricity generation research extends to the thematically linked field of Electrical engineering. His Electronic engineering study integrates concerns from other disciplines, such as Buck converter, Predistortion and Signal. His study on CMOS also encompasses disciplines like
His primary scientific interests are in Amplifier, Electrical engineering, Electronic engineering, CMOS and RF power amplifier. He combines subjects such as Electronic circuit, Bandwidth and Voltage with his study of Amplifier. His work carried out in the field of Electrical engineering brings together such families of science as Extremely high frequency and Wireless.
He has researched Electronic engineering in several fields, including Predistortion, Balun and Signal. The concepts of his CMOS study are interwoven with issues in Logic gate, Silicon on insulator, Electricity generation, Transistor and Impedance matching. His work in Transistor covers topics such as Optoelectronics which are related to areas like Graphene and Transimpedance amplifier.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Power amplifiers and transmitters for RF and microwave
F.H. Raab;P. Asbeck;S. Cripps;P.B. Kenington.
IEEE Transactions on Microwave Theory and Techniques (2002)
High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications
G. Hanington;Pin-Fan Chen;P.M. Asbeck;L.E. Larson.
IEEE Transactions on Microwave Theory and Techniques (1999)
An extended Doherty amplifier with high efficiency over a wide power range
M. Iwamoto;A. Williams;Pin-Fan Chen;A.G. Metzger.
IEEE Transactions on Microwave Theory and Techniques (2001)
An extended Doherty amplifier with high efficiency over a wide power range
M. Iwamoto;A. Williams;Pin-Fan Chen;A. Metzger.
international microwave symposium (2001)
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
Edward T Yu;G. J. Sullivan;P. M. Asbeck;C. D. Wang;C. D. Wang.
Applied Physics Letters (1997)
An Improved Power-Added Efficiency 19-dBm Hybrid Envelope Elimination and Restoration Power Amplifier for 802.11g WLAN Applications
Feipeng Wang;D.F. Kimball;J.D. Popp;A.H. Yang.
IEEE Transactions on Microwave Theory and Techniques (2006)
RF and Microwave Power Amplifier and Transmitter Technologies — Part 1
Frederick H. Raab;Peter Asbeck;Steve Cripps;Peter B. Kenington.
(2003)
RF and Microwave Power Amplifier and Transmitter Technologies — Part 3
Frederick H. Raab;Peter Asbeck;Steve Cripps;Peter B. Kenington.
(2003)
Piezoelectric charge densities in AlGaN/GaN HFETs
P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan.
Electronics Letters (1997)
Current mode class-D power amplifiers for high efficiency RF applications
H. Kobayashi;J. Hinrichs;P.M. Asbeck.
international microwave symposium (2001)
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