World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
87
Citations
26318
World Ranking
350
National Ranking
167

Peter M. Asbeck publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Peter M. Asbeck sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 573 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Peter M. Asbeck D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Peter M. Asbeck sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 87 D-Index — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2007 - Member of the National Academy of Engineering For contributions to heterojunction bipolar transistor and integrated circuit technology.
  • 2003 - IEEE David Sarnoff Award "For development and applications of GaAs-based heterojunction bipolar transistors."
  • 2000 - IEEE Fellow For development of heterostructure bipolar transistors and applications.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Amplifier
  • Semiconductor

His main research concerns Electrical engineering, Amplifier, Electronic engineering, Optoelectronics and RF power amplifier. His Amplifier study combines topics in areas such as Radio frequency and Linearity. The concepts of his Electronic engineering study are interwoven with issues in Delta-sigma modulation, Transistor array, Predistortion and Orthogonal frequency-division multiplexing.

His Optoelectronics research is multidisciplinary, relying on both Transistor, MOSFET and Nitride. His RF power amplifier research integrates issues from Transmitter and Baseband. His research in Power-added efficiency intersects with topics in Switched-mode power supply, Current sense amplifier, Power gain and Electrical efficiency.

His most cited work include:

  • Power amplifiers and transmitters for RF and microwave (1040 citations)
  • High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications (358 citations)
  • An extended Doherty amplifier with high efficiency over a wide power range (320 citations)

What are the main themes of his work throughout his whole career to date?

Peter M. Asbeck mostly deals with Electrical engineering, Amplifier, Optoelectronics, Electronic engineering and RF power amplifier. All of his Electrical engineering and CMOS, Power bandwidth, Bandwidth, Transmitter and Radio frequency investigations are sub-components of the entire Electrical engineering study. Amplifier and Linearity are commonly linked in his work.

Peter M. Asbeck has included themes like Heterojunction bipolar transistor, Transistor and Bipolar junction transistor in his Optoelectronics study. He interconnects Baseband, Signal, Modulation and Wireless in the investigation of issues within Electronic engineering. His work on Switched-mode power supply expands to the thematically related RF power amplifier.

He most often published in these fields:

  • Electrical engineering (45.54%)
  • Amplifier (42.11%)
  • Optoelectronics (40.27%)

What were the highlights of his more recent work (between 2011-2021)?

  • Amplifier (42.11%)
  • Electrical engineering (45.54%)
  • Electronic engineering (36.84%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Amplifier, Electrical engineering, Electronic engineering, CMOS and RF power amplifier. His Amplifier research includes elements of Optoelectronics, Transistor and Linearity. His Optoelectronics research is multidisciplinary, incorporating elements of Transconductance and Graphene.

His Electricity generation research extends to the thematically linked field of Electrical engineering. His Electronic engineering study integrates concerns from other disciplines, such as Buck converter, Predistortion and Signal. His study on CMOS also encompasses disciplines like

  • Silicon on insulator and related Power gain,
  • Logic gate which connect with Electronic circuit.

Between 2011 and 2021, his most popular works were:

  • A Combined Series-Parallel Hybrid Envelope Amplifier for Envelope Tracking Mobile Terminal RF Power Amplifier Applications (150 citations)
  • Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers (146 citations)
  • Ultra-low resistance ohmic contacts in graphene field effect transistors (117 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Amplifier
  • Semiconductor

His primary scientific interests are in Amplifier, Electrical engineering, Electronic engineering, CMOS and RF power amplifier. He combines subjects such as Electronic circuit, Bandwidth and Voltage with his study of Amplifier. His work carried out in the field of Electrical engineering brings together such families of science as Extremely high frequency and Wireless.

He has researched Electronic engineering in several fields, including Predistortion, Balun and Signal. The concepts of his CMOS study are interwoven with issues in Logic gate, Silicon on insulator, Electricity generation, Transistor and Impedance matching. His work in Transistor covers topics such as Optoelectronics which are related to areas like Graphene and Transimpedance amplifier.

Best Publications

  • Power amplifiers and transmitters for RF and microwave

    F.H. Raab;P. Asbeck;S. Cripps;P.B. Kenington

  • High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications

    G. Hanington;Pin-Fan Chen;P.M. Asbeck;L.E. Larson

  • Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

    Edward T Yu;G. J. Sullivan;P. M. Asbeck;C. D. Wang;C. D. Wang

  • An extended Doherty amplifier with high efficiency over a wide power range

    M. Iwamoto;A. Williams;Pin-Fan Chen;A.G. Metzger

  • An extended Doherty amplifier with high efficiency over a wide power range

    M. Iwamoto;A. Williams;Pin-Fan Chen;A. Metzger

  • An Improved Power-Added Efficiency 19-dBm Hybrid Envelope Elimination and Restoration Power Amplifier for 802.11g WLAN Applications

    Feipeng Wang;D.F. Kimball;J.D. Popp;A.H. Yang

  • RF and Microwave Power Amplifier and Transmitter Technologies — Part 1

    Frederick H. Raab;Peter Asbeck;Steve Cripps;Peter B. Kenington

  • RF and Microwave Power Amplifier and Transmitter Technologies — Part 3

    Frederick H. Raab;Peter Asbeck;Steve Cripps;Peter B. Kenington

  • Piezoelectric charge densities in AlGaN/GaN HFETs

    P.M. Asbeck;E.T. Yu;S.S. Lau;G.J. Sullivan

  • Current mode class-D power amplifiers for high efficiency RF applications

    H. Kobayashi;J. Hinrichs;P.M. Asbeck

  • Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications

    Feipeng Wang;A.H. Yang;D.F. Kimball;L.E. Larson

  • High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs

    D.F. Kimball;Jinho Jeong;Chin Hsia;P. Draxler

  • Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers

    Hayg-Taniel Dabag;Bassel Hanafi;Fatih Golcuk;Amir Agah

  • Open-Loop Digital Predistorter for RF Power Amplifiers Using Dynamic Deviation Reduction-Based Volterra Series

    Anding Zhu;P.J. Draxler;J.J. Yan;T.J. Brazil

  • Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures

    E. T. Yu;X. Z. Dang;P. M. Asbeck;S. S. Lau

  • A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier

    Feipeng Wang;D.F. Kimball;D.Y. Lie;P.M. Asbeck

  • GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

    P.M. Asbeck;M.-C.F. Chang;J.A. Higgins;N.H. Sheng

  • A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS

    S. Pornpromlikit;Jinho Jeong;C.D. Presti;A. Scuderi

  • Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

    Eun Ji Kim;Lingquan Wang;Peter M. Asbeck;Krishna C. Saraswat

  • Salicidation process using NiSi and its device application

    F. Deng;R. A. Johnson;P. M. Asbeck;S. S. Lau

Frequent Co-Authors

Lawrence E. Larson
Lawrence E. Larson Brown University
James F. Buckwalter
James F. Buckwalter University of California, Santa Barbara
Mau-Chung Frank Chang
Mau-Chung Frank Chang University of California, Los Angeles
Yuan Taur
Yuan Taur University of California, San Diego
Edward T. Yu
Edward T. Yu The University of Texas at Austin
Paul K. L. Yu
Paul K. L. Yu University of California, San Diego
Paul M. Campbell
Paul M. Campbell United States Naval Research Laboratory
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
S. S. Lau
S. S. Lau University of California, San Diego
Paul C. McIntyre
Paul C. McIntyre Stanford University

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