World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
16038
World Ranking
1217
National Ranking
499

Research.com Recognitions

  • 2010 - IEEE David Sarnoff Award “For development of millimeter-wave and sub-millimeter-wave InP bipolar transistors and integrated circuits.”
  • 2003 - IEEE Fellow For contributions to high speed electron devices and integrated circuits.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Amplifier, Heterojunction bipolar transistor and Optics. Optoelectronics is closely attributed to Ohmic contact in his research. His Amplifier research incorporates elements of W band and High-electron-mobility transistor.

As part of his inquiry into Transistor and Bipolar junction transistor, he is doing Heterojunction bipolar transistor research. His studies in Transistor integrate themes in fields like Microstrip and Breakdown voltage. His studies examine the connections between Optics and genetics, as well as such issues in Phase-locked loop, with regards to Photonic integrated circuit and Phase modulation.

His most cited work include:

  • Blockage and directivity in 60 GHz wireless personal area networks: from cross-layer model to multihop MAC design (251 citations)
  • Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics (239 citations)
  • Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices. (215 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Electrical engineering, Heterojunction bipolar transistor, Amplifier and Electronic engineering. Mark J. W. Rodwell has included themes like Transistor and Bipolar junction transistor in his Optoelectronics study. His Heterojunction bipolar transistor study which covers Indium phosphide that intersects with Indium gallium arsenide.

His Amplifier study combines topics from a wide range of disciplines, such as W band and High-electron-mobility transistor. His study on Electronic engineering also encompasses disciplines like

  • Phase modulation, which have a strong connection to Optics,
  • Phase-locked loop that intertwine with fields like Photonics and Laser. His Gallium arsenide study combines topics in areas such as Ohmic contact and MOSFET.

He most often published in these fields:

  • Optoelectronics (57.38%)
  • Electrical engineering (28.85%)
  • Heterojunction bipolar transistor (26.89%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (57.38%)
  • Electrical engineering (28.85%)
  • Heterojunction (14.43%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Electrical engineering, Heterojunction, Heterojunction bipolar transistor and Amplifier are his primary areas of study. The Optoelectronics study combines topics in areas such as Transistor, Laser and Epitaxy. His work in Transistor addresses subjects such as Terahertz radiation, which are connected to disciplines such as Bipolar junction transistor.

Mark J. W. Rodwell has researched Heterojunction in several fields, including Effective mass, Silicon, Quantum tunnelling and Dielectric. His Heterojunction bipolar transistor study also includes fields such as

  • Integrated circuit which is related to area like Balun,
  • Extremely high frequency that connect with fields like RF power amplifier. His Amplifier research includes elements of Electricity generation, Bandwidth and Electronics.

Between 2014 and 2021, his most popular works were:

  • InP HBT Technologies for THz Integrated Circuits (83 citations)
  • Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier (27 citations)
  • Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop. (25 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

His primary areas of study are Optoelectronics, Electrical engineering, Transistor, Heterojunction and Quantum tunnelling. As part of his studies on Optoelectronics, Mark J. W. Rodwell frequently links adjacent subjects like Heterojunction bipolar transistor. His Heterojunction bipolar transistor research integrates issues from Breakdown voltage, Amplifier, Gain stage, Integrated circuit and Electricity generation.

His work investigates the relationship between Electrical engineering and topics such as Power that intersect with problems in Speech recognition, Extremely high frequency, User equipment and Beamforming. His Heterojunction research is multidisciplinary, incorporating perspectives in Effective mass, Doping, High current and Electric field. His work deals with themes such as Range, Logic gate and Voltage, which intersect with Quantum tunnelling.

Best Publications

  • Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices.

    B. J. Keay;S. Zeuner;S. J. Allen;K. D. Maranowski

  • Blockage and directivity in 60 GHz wireless personal area networks: from cross-layer model to multihop MAC design

    S. Singh;F. Ziliotto;U. Madhow;E. Belding

  • Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics

    M.J.W. Rodwell;S.T. Allen;R.Y. Yu;M.G. Case

  • Indoor Millimeter Wave MIMO: Feasibility and Performance

    E. Torkildson;U. Madhow;M. Rodwell

  • GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling

    M.J.W. Rodwell;M. Kamegawa;R. Yu;M. Case

  • Subpicosecond laser timing stabilization

    M.J.W. Rodwell;D.M. Bloom;K.J. Weingarten

  • InP HBT Technologies for THz Integrated Circuits

    Miguel Urteaga;Zach Griffith;Munkyo Seo;Jonathan Hacker

  • Inverse Bloch oscillator: Strong terahertz-photocurrent resonances at the Bloch frequency.

    K. Unterrainer;B. J. Keay;M. C. Wanke;S. J. Allen

  • Submicron scaling of HBTs

    M.J.W. Rodwell;M. Urteaga;T. Mathew;D. Scott

  • Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz

    M. Reddy;S.C. Martin;A.C. Molnar;R.E. Muller

  • Photon-assisted electric field domains and multiphoton-assisted tunneling in semiconductor superlattices.

    B. J. Keay;S. J. Allen;J. Galan;J. P. Kaminski

  • InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz

    Munkyo Seo;M. Urteaga;J. Hacker;A. Young

  • A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

    Yu Yuan;Bo Yu;Jaesoo Ahn;P. C. McIntyre

  • Comprehensive digital correction of mismatch errors for a 400-msamples/s 80-dB SFDR time-interleaved analog-to-digital converter

    Munkyo Seo;M.J.W. Rodwell;U. Madhow

  • Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product

    K.S. Giboney;R.L. Nagarajan;T.E. Reynolds;S.T. Allen

  • Traveling-wave photodetectors

    K.S. Giboney;M.J.W. Rodwell;J.E. Bowers

  • Submicron transferred-substrate heterojunction bipolar transistors

    Q. Lee;S.C. Martin;D. Mensa;R.P. Smith

  • A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

    Yu Yuan;Lingquan Wang;Bo Yu;Byungha Shin

  • InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies

    M.J.W. Rodwell;Minh Le;B. Brar

  • AlGaN/GaN heterojunction bipolar transistor

    L.S. McCarthy;P. Kozodoy;M.J.W. Rodwell;S.P. DenBaars

Frequent Co-Authors

Miguel Urteaga
Miguel Urteaga Teledyne Technologies (United States)
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
John E. Bowers
John E. Bowers University of California, Santa Barbara
Upamanyu Madhow
Upamanyu Madhow University of California, Santa Barbara
Brian Thibeault
Brian Thibeault University of California, Santa Barbara
D. M. Bloom
D. M. Bloom Stanford University
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Mark A. Wistey
Mark A. Wistey Texas State University

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