World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
16038
World Ranking
1217
National Ranking
500

Mark J. W. Rodwell publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mark J. W. Rodwell sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 619 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mark J. W. Rodwell D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mark J. W. Rodwell sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 65 D-Index — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2010 - IEEE David Sarnoff Award “For development of millimeter-wave and sub-millimeter-wave InP bipolar transistors and integrated circuits.”
  • 2003 - IEEE Fellow For contributions to high speed electron devices and integrated circuits.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Amplifier, Heterojunction bipolar transistor and Optics. Optoelectronics is closely attributed to Ohmic contact in his research. His Amplifier research incorporates elements of W band and High-electron-mobility transistor.

As part of his inquiry into Transistor and Bipolar junction transistor, he is doing Heterojunction bipolar transistor research. His studies in Transistor integrate themes in fields like Microstrip and Breakdown voltage. His studies examine the connections between Optics and genetics, as well as such issues in Phase-locked loop, with regards to Photonic integrated circuit and Phase modulation.

His most cited work include:

  • Blockage and directivity in 60 GHz wireless personal area networks: from cross-layer model to multihop MAC design (251 citations)
  • Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics (239 citations)
  • Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices. (215 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Electrical engineering, Heterojunction bipolar transistor, Amplifier and Electronic engineering. Mark J. W. Rodwell has included themes like Transistor and Bipolar junction transistor in his Optoelectronics study. His Heterojunction bipolar transistor study which covers Indium phosphide that intersects with Indium gallium arsenide.

His Amplifier study combines topics from a wide range of disciplines, such as W band and High-electron-mobility transistor. His study on Electronic engineering also encompasses disciplines like

  • Phase modulation, which have a strong connection to Optics,
  • Phase-locked loop that intertwine with fields like Photonics and Laser. His Gallium arsenide study combines topics in areas such as Ohmic contact and MOSFET.

He most often published in these fields:

  • Optoelectronics (57.38%)
  • Electrical engineering (28.85%)
  • Heterojunction bipolar transistor (26.89%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (57.38%)
  • Electrical engineering (28.85%)
  • Heterojunction (14.43%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Electrical engineering, Heterojunction, Heterojunction bipolar transistor and Amplifier are his primary areas of study. The Optoelectronics study combines topics in areas such as Transistor, Laser and Epitaxy. His work in Transistor addresses subjects such as Terahertz radiation, which are connected to disciplines such as Bipolar junction transistor.

Mark J. W. Rodwell has researched Heterojunction in several fields, including Effective mass, Silicon, Quantum tunnelling and Dielectric. His Heterojunction bipolar transistor study also includes fields such as

  • Integrated circuit which is related to area like Balun,
  • Extremely high frequency that connect with fields like RF power amplifier. His Amplifier research includes elements of Electricity generation, Bandwidth and Electronics.

Between 2014 and 2021, his most popular works were:

  • InP HBT Technologies for THz Integrated Circuits (83 citations)
  • Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier (27 citations)
  • Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop. (25 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

His primary areas of study are Optoelectronics, Electrical engineering, Transistor, Heterojunction and Quantum tunnelling. As part of his studies on Optoelectronics, Mark J. W. Rodwell frequently links adjacent subjects like Heterojunction bipolar transistor. His Heterojunction bipolar transistor research integrates issues from Breakdown voltage, Amplifier, Gain stage, Integrated circuit and Electricity generation.

His work investigates the relationship between Electrical engineering and topics such as Power that intersect with problems in Speech recognition, Extremely high frequency, User equipment and Beamforming. His Heterojunction research is multidisciplinary, incorporating perspectives in Effective mass, Doping, High current and Electric field. His work deals with themes such as Range, Logic gate and Voltage, which intersect with Quantum tunnelling.

Best Publications

  • Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices.

    B. J. Keay;S. Zeuner;S. J. Allen;K. D. Maranowski

  • Blockage and directivity in 60 GHz wireless personal area networks: from cross-layer model to multihop MAC design

    S. Singh;F. Ziliotto;U. Madhow;E. Belding

  • Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics

    M.J.W. Rodwell;S.T. Allen;R.Y. Yu;M.G. Case

  • Indoor Millimeter Wave MIMO: Feasibility and Performance

    E. Torkildson;U. Madhow;M. Rodwell

  • GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling

    M.J.W. Rodwell;M. Kamegawa;R. Yu;M. Case

  • Subpicosecond laser timing stabilization

    M.J.W. Rodwell;D.M. Bloom;K.J. Weingarten

  • InP HBT Technologies for THz Integrated Circuits

    Miguel Urteaga;Zach Griffith;Munkyo Seo;Jonathan Hacker

  • Inverse Bloch oscillator: Strong terahertz-photocurrent resonances at the Bloch frequency.

    K. Unterrainer;B. J. Keay;M. C. Wanke;S. J. Allen

  • Submicron scaling of HBTs

    M.J.W. Rodwell;M. Urteaga;T. Mathew;D. Scott

  • Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz

    M. Reddy;S.C. Martin;A.C. Molnar;R.E. Muller

  • Photon-assisted electric field domains and multiphoton-assisted tunneling in semiconductor superlattices.

    B. J. Keay;S. J. Allen;J. Galan;J. P. Kaminski

  • InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz

    Munkyo Seo;M. Urteaga;J. Hacker;A. Young

  • A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

    Yu Yuan;Bo Yu;Jaesoo Ahn;P. C. McIntyre

  • Comprehensive digital correction of mismatch errors for a 400-msamples/s 80-dB SFDR time-interleaved analog-to-digital converter

    Munkyo Seo;M.J.W. Rodwell;U. Madhow

  • Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product

    K.S. Giboney;R.L. Nagarajan;T.E. Reynolds;S.T. Allen

  • Traveling-wave photodetectors

    K.S. Giboney;M.J.W. Rodwell;J.E. Bowers

  • Submicron transferred-substrate heterojunction bipolar transistors

    Q. Lee;S.C. Martin;D. Mensa;R.P. Smith

  • A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

    Yu Yuan;Lingquan Wang;Bo Yu;Byungha Shin

  • InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies

    M.J.W. Rodwell;Minh Le;B. Brar

  • AlGaN/GaN heterojunction bipolar transistor

    L.S. McCarthy;P. Kozodoy;M.J.W. Rodwell;S.P. DenBaars

Frequent Co-Authors

Miguel Urteaga
Miguel Urteaga Teledyne Technologies (United States)
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
John E. Bowers
John E. Bowers University of California, Santa Barbara
Upamanyu Madhow
Upamanyu Madhow University of California, Santa Barbara
Brian Thibeault
Brian Thibeault University of California, Santa Barbara
D. M. Bloom
D. M. Bloom Stanford University
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Mark A. Wistey
Mark A. Wistey Texas State University

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