2010 - IEEE David Sarnoff Award “For development of millimeter-wave and sub-millimeter-wave InP bipolar transistors and integrated circuits.”
2003 - IEEE Fellow For contributions to high speed electron devices and integrated circuits.
The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Amplifier, Heterojunction bipolar transistor and Optics. Optoelectronics is closely attributed to Ohmic contact in his research. His Amplifier research incorporates elements of W band and High-electron-mobility transistor.
As part of his inquiry into Transistor and Bipolar junction transistor, he is doing Heterojunction bipolar transistor research. His studies in Transistor integrate themes in fields like Microstrip and Breakdown voltage. His studies examine the connections between Optics and genetics, as well as such issues in Phase-locked loop, with regards to Photonic integrated circuit and Phase modulation.
His main research concerns Optoelectronics, Electrical engineering, Heterojunction bipolar transistor, Amplifier and Electronic engineering. Mark J. W. Rodwell has included themes like Transistor and Bipolar junction transistor in his Optoelectronics study. His Heterojunction bipolar transistor study which covers Indium phosphide that intersects with Indium gallium arsenide.
His Amplifier study combines topics from a wide range of disciplines, such as W band and High-electron-mobility transistor. His study on Electronic engineering also encompasses disciplines like
Optoelectronics, Electrical engineering, Heterojunction, Heterojunction bipolar transistor and Amplifier are his primary areas of study. The Optoelectronics study combines topics in areas such as Transistor, Laser and Epitaxy. His work in Transistor addresses subjects such as Terahertz radiation, which are connected to disciplines such as Bipolar junction transistor.
Mark J. W. Rodwell has researched Heterojunction in several fields, including Effective mass, Silicon, Quantum tunnelling and Dielectric. His Heterojunction bipolar transistor study also includes fields such as
His primary areas of study are Optoelectronics, Electrical engineering, Transistor, Heterojunction and Quantum tunnelling. As part of his studies on Optoelectronics, Mark J. W. Rodwell frequently links adjacent subjects like Heterojunction bipolar transistor. His Heterojunction bipolar transistor research integrates issues from Breakdown voltage, Amplifier, Gain stage, Integrated circuit and Electricity generation.
His work investigates the relationship between Electrical engineering and topics such as Power that intersect with problems in Speech recognition, Extremely high frequency, User equipment and Beamforming. His Heterojunction research is multidisciplinary, incorporating perspectives in Effective mass, Doping, High current and Electric field. His work deals with themes such as Range, Logic gate and Voltage, which intersect with Quantum tunnelling.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices.
B. J. Keay;S. Zeuner;S. J. Allen;K. D. Maranowski.
Physical Review Letters (1995)
Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices.
B. J. Keay;S. Zeuner;S. J. Allen;K. D. Maranowski.
Physical Review Letters (1995)
Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics
M.J.W. Rodwell;S.T. Allen;R.Y. Yu;M.G. Case.
Proceedings of the IEEE (1994)
Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics
M.J.W. Rodwell;S.T. Allen;R.Y. Yu;M.G. Case.
Proceedings of the IEEE (1994)
Blockage and directivity in 60 GHz wireless personal area networks: from cross-layer model to multihop MAC design
S. Singh;F. Ziliotto;U. Madhow;E. Belding.
IEEE Journal on Selected Areas in Communications (2009)
Blockage and directivity in 60 GHz wireless personal area networks: from cross-layer model to multihop MAC design
S. Singh;F. Ziliotto;U. Madhow;E. Belding.
IEEE Journal on Selected Areas in Communications (2009)
GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling
M.J.W. Rodwell;M. Kamegawa;R. Yu;M. Case.
IEEE Transactions on Microwave Theory and Techniques (1991)
GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling
M.J.W. Rodwell;M. Kamegawa;R. Yu;M. Case.
IEEE Transactions on Microwave Theory and Techniques (1991)
Subpicosecond laser timing stabilization
M.J.W. Rodwell;D.M. Bloom;K.J. Weingarten.
IEEE Journal of Quantum Electronics (1989)
Subpicosecond laser timing stabilization
M.J.W. Rodwell;D.M. Bloom;K.J. Weingarten.
IEEE Journal of Quantum Electronics (1989)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
University of California, Santa Barbara
University of California, Santa Barbara
University of California, Santa Barbara
University of California, Santa Barbara
University of California, Santa Barbara
Stanford University
University of California, Santa Barbara
Purdue University West Lafayette
Texas State University
University of California, Santa Barbara
Hewlett-Packard (United States)
Indian Institute of Technology Kanpur
Harvard University
University of Regensburg
Clarkson University
Pukyong National University
University of Toronto
University of Cambridge
Complutense University of Madrid
Swedish University of Agricultural Sciences
Tsinghua University
Université Paris Cité
Linnaeus University
Chapman University
University of California, Los Angeles
Harvard University