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Electronics and Electrical Engineering

D-Index
31
Citations
4031
World Ranking
6576
National Ranking
2153

Overview

Miguel Urteaga is affiliated with Teledyne Technologies in the United States, where their research primarily focuses on electrical and electronic engineering. Their body of work spans several subfields, including condensed matter physics, atomic and molecular physics and optics, and biomedical engineering. The main concentration of their research lies in radio frequency integrated circuit design and advanced power amplifier design, with additional work in microwave engineering and waveguides as well as GaN-based semiconductor devices and materials.

The scientist has made contributions to multiple topics related to high-frequency electronics and semiconductor technology. These key topics include:

  • Radio Frequency Integrated Circuit Design
  • Advanced Power Amplifier Design
  • Microwave Engineering and Waveguides
  • GaN-based semiconductor devices and materials
  • Millimeter-Wave Propagation and Modeling
  • 3D IC and TSV technologies
  • Microwave and Dielectric Measurement Techniques

Their recent scholarly output includes papers published between 2020 and 2024 in well-regarded venues within microwave and terahertz technology fields. Notable recent papers include:

  • "A 200mW D-band Power Amplifier with 17.8% PAE in 250-nm InP HBT Technology," 2021, European Microwave Integrated Circuits Conference
  • "A $W$ -Band SSPA With 100-140-mW $P_{out}$, >20% PAE, and 26-30-dB $S_{21}$ Gain Across 88-104 GHz," 2020, IEEE Microwave and Wireless Components Letters
  • "A 150-175-GHz 30-dB S 21 Power Amplifier With 125-mW P out and 16.2% PAE Using InP HBT," 2022, IEEE Microwave and Wireless Components Letters
  • "N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz," 2023, IEEE Microwave and Wireless Technology Letters
  • "A 78-mW 220-GHz Power Amplifier With Peak 18.4% PAE in 250-nm InP HBT Technology," 2024, IEEE Transactions on Microwave Theory and Techniques

Their research has appeared frequently in the following publication venues:

  • IEEE Microwave and Wireless Components Letters
  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Transactions on Terahertz Science and Technology
  • IEEE Microwave and Wireless Technology Letters
  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

Collaboration has been a significant element in their work, with frequent co-authors including:

  • Petra Rowell
  • Zach Griffith
  • James F. Buckwalter
  • M.J.W. Rodwell
  • Jérôme Chéron

Best Publications

  • InP HBT Technologies for THz Integrated Circuits

    Miguel Urteaga;Zach Griffith;Munkyo Seo;Jonathan Hacker

  • Submicron scaling of HBTs

    M.J.W. Rodwell;M. Urteaga;T. Mathew;D. Scott

  • InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz

    Munkyo Seo;M. Urteaga;J. Hacker;A. Young

  • 130nm InP DHBTs with ft >0.52THz and f max >1.1THz

    M. Urteaga;R. Pierson;P. Rowell;V. Jain

  • THz MMICs based on InP HBT Technology

    Jonathan Hacker;Munkyo Seo;Adam Young;Zach Griffith

  • SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

    M. J. W. Rodwell;M. Urteaga;Y. Betser;T. Mathew

  • InP HBT Integrated Circuit Technology for Terahertz Frequencies

    M. Urteaga;M. Seo;J. Hacker;Z. Griffith

  • 300 GHz Integrated Heterodyne Receiver and Transmitter With On-Chip Fundamental Local Oscillator and Mixers

    Sooyeon Kim;Jongwon Yun;Daekeun Yoon;Moonil Kim

  • A Prescription for Sub-Millimeter-Wave Transistor Characterization

    D. F. Williams;A. C. Young;M. Urteaga

  • G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers

    V.K. Paidi;Z. Griffith;Yun Wei;M. Dahlstrom

  • Monolithic integration of InP-based transistors on Si substrates using MBE

    W.K. Liu;D. Lubyshev;J.M. Fastenau;Y. Wu

  • InP HBT amplifier MMICs operating to 0.67 THz

    Jonathan Hacker;Miguel Urteaga;Munkyo Seo;Anders Skalare

  • 50-nm E-mode In 0.7 Ga 0.3 As PHEMTs on 100-mm InP substrate with f max > 1 THz

    Dae-Hyun Kim;Jesus A. del Alamo;Peter Chen;Wonill Ha

  • A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology

    Ahmed S. H. Ahmed;Munkyo Seo;Ali A. Farid;Miguel Urteaga

  • g300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process

    Munkyo Seo;Miguel Urteaga;Adam Young;Vibhor Jain

  • 250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz

    Jonathan Hacker;Miguel Urteaga;Dino Mensa;Richard Pierson

  • A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

    T.E. Kazior;J.R. LaRoche;D. Lubyshev;J. M. Fastenau

  • THz MMICs based on InP HBT Technology

    Unknown

  • High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate

    T. E. Kazior;J. R. LaRoche;M. Urteaga;J. Bergman

  • 180–265 GHz, 17–24 dBm output power broadband, high-gain power amplifiers in InP HBT

    Zach Griffith;Miguel Urteaga;Petra Rowell

  • Wideband DHBTs using a graded carbon-doped InGaAs base

    M. Dahlstrom;X.-M. Fang;D. Lubyshev;M. Urteaga

  • A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT

    Zach Griffith;Miguel Urteaga;Petra Rowell

  • Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

    Johann C. Rode;Han-Wei Chiang;Prateek Choudhary;Vibhor Jain

  • A Fully-Integrated 40–222 GHz InP HBT Distributed Amplifier

    Sangwoo Yoon;Iljin Lee;Miguel Urteaga;Moonil Kim

Frequent Co-Authors

Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Brian Thibeault
Brian Thibeault University of California, Santa Barbara
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
James F. Buckwalter
James F. Buckwalter University of California, Santa Barbara
Dylan F. Williams
Dylan F. Williams National Institute of Standards and Technology
Huili Grace Xing
Huili Grace Xing Cornell University
Debdeep Jena
Debdeep Jena Cornell University

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