World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
6749
World Ranking
4675
National Ranking
1644

Richard Lai publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Richard Lai sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 321 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Richard Lai D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Richard Lai sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Amplifier
  • Semiconductor

The scientist’s investigation covers issues in Optoelectronics, Amplifier, High-electron-mobility transistor, Electrical engineering and Monolithic microwave integrated circuit. His biological study spans a wide range of topics, including Noise measurement, Noise temperature and Noise figure. His studies in Amplifier integrate themes in fields like Transistor and Electronic engineering.

Richard Lai combines subjects such as Noise, Coplanar waveguide, Gallium arsenide and Terahertz radiation with his study of High-electron-mobility transistor. His Monolithic microwave integrated circuit study combines topics from a wide range of disciplines, such as Extremely high frequency and Microwave. His Integrated circuit research incorporates elements of Radio frequency and Substrate.

His most cited work include:

  • Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz (192 citations)
  • First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process (181 citations)
  • THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors (154 citations)

What are the main themes of his work throughout his whole career to date?

Optoelectronics, High-electron-mobility transistor, Amplifier, Electrical engineering and Monolithic microwave integrated circuit are his primary areas of study. In his work, Noise measurement and Noise is strongly intertwined with Noise temperature, which is a subfield of Optoelectronics. Richard Lai has researched High-electron-mobility transistor in several fields, including Heterojunction bipolar transistor, Electronic engineering, Gallium arsenide and V band.

His Amplifier study frequently draws connections to other fields, such as Transistor. His Electrical engineering study frequently involves adjacent topics like Q band. His Monolithic microwave integrated circuit study deals with Integrated circuit intersecting with Electronic circuit, Terahertz radiation and Radiometer.

He most often published in these fields:

  • Optoelectronics (68.51%)
  • High-electron-mobility transistor (67.82%)
  • Amplifier (58.13%)

What were the highlights of his more recent work (between 2008-2020)?

  • Optoelectronics (68.51%)
  • Amplifier (58.13%)
  • Electrical engineering (53.29%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Amplifier, Electrical engineering, High-electron-mobility transistor and Monolithic microwave integrated circuit. His Optoelectronics research is multidisciplinary, incorporating elements of Layer, Noise and Frequency band. He specializes in Amplifier, namely Low-noise amplifier.

When carried out as part of a general Electrical engineering research project, his work on Noise temperature, Noise figure, Y-factor and RF power amplifier is frequently linked to work in Vacuum electronics, therefore connecting diverse disciplines of study. His High-electron-mobility transistor study is concerned with Transistor in general. His work carried out in the field of Monolithic microwave integrated circuit brings together such families of science as Heterojunction bipolar transistor, Electronic engineering, Heterodyne and Integrated circuit.

Between 2008 and 2020, his most popular works were:

  • First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process (181 citations)
  • THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors (154 citations)
  • Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs (86 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Amplifier
  • Semiconductor

His scientific interests lie mostly in Amplifier, Optoelectronics, High-electron-mobility transistor, Electrical engineering and Monolithic microwave integrated circuit. His Amplifier research includes elements of Transistor and Coplanar waveguide. His Optoelectronics study which covers Y-factor that intersects with Noise and Transistor array.

His work deals with themes such as Noise measurement, Dielectric, Noise figure and Integrated circuit, which intersect with High-electron-mobility transistor. His primary area of study in Electrical engineering is in the field of Noise temperature. His Monolithic microwave integrated circuit research focuses on W band and how it relates to Electronic circuit and Noise.

Best Publications

  • First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

    Xiaobing Mei;Wayne Yoshida;Mike Lange;Jane Lee

  • Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

    R. Lai;X.B. Mei;W.R. Deal;W. Yoshida

  • THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

    W. Deal;X. B. Mei;K. M. K. H. Leong;V. Radisic

  • Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

    N. Wadefalk;A. Mellberg;I. Angelov;M.E. Barsky

  • Power-amplifier modules covering 70-113 GHz using MMICs

    Huei Wang;L. Samoska;T. Gaier;A. Peralta

  • Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

    W. R. Deal;K. Leong;V. Radisic;S. Sarkozy

  • Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

    W R Deal;X B Mei;V Radisic;K Leong

  • 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

    M. Wojtowicz;R. Lai;D.C. Streit;G.I. Ng

  • A 340–380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging

    K. Leong;W.R. Deal;V. Radisic;Xiao Bing Mei

  • A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz

    L. Samoska;W.R. Deal;G. Chattopadhyay;D. Pukala

  • A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module

    V Radisic;W R Deal;K M K H Leong;X B Mei

  • A 95-GHz InP HEMT MMIC amplifier with 427-mW power output

    Y.C. Chen;D.L. Ingram;R. Lai;M. Barsky

  • A 100 mW, 0.670 THz power module

    Jack C. Tucek;Mark A. Basten;David A. Gallagher;Kenneth E. Kreischer

  • Design and Analysis of Broadband Dual-Gate Balanced Low-Noise Amplifiers

    W.R. Deal;M. Biedenbender;Po-hsin Liu;J. Uyeda

  • W-band InP wideband MMIC LNA with 30 K noise temperature

    S. Weinreb;R. Lai;N. Erickson;T. Gaier

  • Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology

    V. Radisic;X.B. Mei;W.R. Deal;W. Yoshida

  • Low noise amplifier for 180 GHz frequency band

    Pekka Kangaslahti;David Pukala;Todd Gaier;William Deal

  • Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz

    W.R. Deal;X.B. Mei;V. Radisic;W. Yoshida

  • 220-GHz Solid-State Power Amplifier Modules

    V. Radisic;K. M. K. H. Leong;S. Sarkozy;Xiaobing Mei

  • Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT

    R. Lai;M. Wojtowicz;C.H. Chen;M. Biedenbender

  • A low phase-error 44-GHz HEMT attenuator

    L. Sjogren;D. Ingram;M. Biedenbender;R. Lai

  • A 140-GHz monolithic low noise amplifier

    H. Wang;R. Lai;D.C.W. Lo;D.C. Streit

Frequent Co-Authors

Lorene Samoska
Lorene Samoska Jet Propulsion Lab
William R. Deal
William R. Deal Northrop Grumman (United States)
Charles R. Lawrence
Charles R. Lawrence Jet Propulsion Lab
Geok Ing Ng
Geok Ing Ng Nanyang Technological University
Huei Wang
Huei Wang National Taiwan University
Goutam Chattopadhyay
Goutam Chattopadhyay Jet Propulsion Lab
Imran Mehdi
Imran Mehdi Jet Propulsion Lab
J. Laskar
J. Laskar Maja Systems
Anthony C. S. Readhead
Anthony C. S. Readhead California Institute of Technology
Peter H. Siegel
Peter H. Siegel California Institute of Technology

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