World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4416
World Ranking
6099
National Ranking
98

Overview

Niklas Rorsman is affiliated with Chalmers University of Technology in Sweden. Their research spans multiple overlapping fields including engineering, physics and astronomy, and materials science.

The scientist's main subfields of study encompass electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, atomic and molecular physics and optics, and materials chemistry.

Rorsman's work focuses primarily on semiconductor materials and devices, with an emphasis on GaN-based semiconductor devices and materials as well as Ga₂O₃ and related materials. Additional research topics include silicon carbide semiconductor technologies, advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, and ZnO doping and properties.

Frequent coauthors collaborating with Rorsman include:

  • Mattias Thorsell
  • Vanya Darakchieva
  • Jr-Tai Chen
  • Axel R. Persson
  • Ding-Yuan Chen

Rorsman has published multiple scientific papers in prominent venues. Notable recent papers include:

  • "Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors," 2020, IEEE Electron Device Letters
  • "Mg-doping and free-hole properties of hot-wall MOCVD GaN," 2022, Journal of Applied Physics
  • "High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a 'Buffer-Free' Heterostructure," 2022, IEEE Electron Device Letters
  • "Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer," 2021, IEEE Journal of the Electron Devices Society
  • "Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers," 2023, Applied Physics Letters

Rorsman's publication venues with multiple contributions include:

  • IEEE Transactions on Electron Devices
  • physica status solidi (a)
  • IEEE Electron Device Letters
  • Journal of Applied Physics
  • Applied Physics Letters

Best Publications

  • Accurate small-signal modeling of HFET's for millimeter-wave applications

    N. Rorsman;M. Garcia;C. Karlsson;H. Zirath

  • An empirical-table based FET model

    I. Angelov;N. Rorsman;J. Stenarson;M. Garcia

  • Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

    N. Wadefalk;A. Mellberg;I. Angelov;M.E. Barsky

  • Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C"V… characterization of metal-insulator-semiconductor-heterostructure capacitors

    Martin Fagerlind;Fredrik Allerstam;Einar Sveinbjörnsson;Niklas Rorsman

  • Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

    I. Angelov;K. Andersson;D. Schreurs;D. Xiao

  • A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

    D. Gustafsson;J. C. Cahuana;D. Kuylenstierna;I. Angelov

  • Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

    Anna Malmros;H. Blanck;Niklas Rorsman

  • Fabrication and characterization of field-plated buried-gate SiC MESFETs

    K. Andersson;M. Sudow;P.-A. Nilsson;E. Sveinbjornsson

  • Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

    V. Desmaris;M. Rudzinski;N. Rorsman;P.R. Hageman

  • A GaN–SiC hybrid material for high-frequency and power electronics

    Jr-Tai Chen;Johan Bergsten;Jun Lu;Erik Janzén

  • Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

    Olle Axelsson;Sebastian Gustafsson;Hans Hjelmgren;Niklas Rorsman

  • Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

    Sebastian Gustafsson;Jr-Tai Chen;Johan Bergsten;Urban Forsberg

  • An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

    M. Sudow;M. Fagerlind;M. Thorsell;K. Andersson

  • Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

    Jin-Yu Shiu;Jui-Chien Huang;V. Desmaris;Chia-Ta Chang

  • Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

    C. M. Andersson;D. Gustafsson;K. Yamanaka;E. Kuwata

  • Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

    Johan Bergsten;Mattias Thorsell;David Adolph;Jr-Tai Chen

  • Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation.

    J. Pettersson;P. Wahlgren;P. Delsing;D. B. Haviland

  • 1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor

    J. Olsson;N. Rorsman;L. Vestling;C. Fager

  • Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

    Anna Malmros;Piero Gamarra;Mattias Thorsell;Hans Hjelmgren

  • Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

    Ding-Yuan Chen;Anna Malmros;Mattias Thorsell;Hans Hjelmgren

  • Thermal Study of the High-Frequency Noise in GaN HEMTs

    M. Thorsell;K. Andersson;M. Fagerlind;M. Sudow

  • On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs

    I. Angelov;V. Desmaris;K. Dynefors;P.A. Nilsson

Frequent Co-Authors

Herbert Zirath
Herbert Zirath Chalmers University of Technology
Erik Janzén
Erik Janzén Linköping University
Christian Fager
Christian Fager Chalmers University of Technology
Wlodek Strupinski
Wlodek Strupinski Warsaw University of Technology
Ivan Gueorguiev Ivanov
Ivan Gueorguiev Ivanov Linköping University
Eva Olsson
Eva Olsson Chalmers University of Technology
Martin Kuball
Martin Kuball University of Bristol
Jun Lu
Jun Lu Zhejiang University
Lars Hultman
Lars Hultman Linköping University
Mikael Östling
Mikael Östling Royal Institute of Technology

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