World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4416
World Ranking
6098
National Ranking
98

Niklas Rorsman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Niklas Rorsman sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 245 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Niklas Rorsman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Niklas Rorsman sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Niklas Rorsman is affiliated with Chalmers University of Technology in Sweden. Their research spans multiple overlapping fields including engineering, physics and astronomy, and materials science.

The scientist's main subfields of study encompass electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, atomic and molecular physics and optics, and materials chemistry.

Rorsman's work focuses primarily on semiconductor materials and devices, with an emphasis on GaN-based semiconductor devices and materials as well as Ga₂O₃ and related materials. Additional research topics include silicon carbide semiconductor technologies, advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, and ZnO doping and properties.

Frequent coauthors collaborating with Rorsman include:

  • Mattias Thorsell
  • Vanya Darakchieva
  • Jr-Tai Chen
  • Axel R. Persson
  • Ding-Yuan Chen

Rorsman has published multiple scientific papers in prominent venues. Notable recent papers include:

  • "Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors," 2020, IEEE Electron Device Letters
  • "Mg-doping and free-hole properties of hot-wall MOCVD GaN," 2022, Journal of Applied Physics
  • "High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a 'Buffer-Free' Heterostructure," 2022, IEEE Electron Device Letters
  • "Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer," 2021, IEEE Journal of the Electron Devices Society
  • "Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers," 2023, Applied Physics Letters

Rorsman's publication venues with multiple contributions include:

  • IEEE Transactions on Electron Devices
  • physica status solidi (a)
  • IEEE Electron Device Letters
  • Journal of Applied Physics
  • Applied Physics Letters

Best Publications

  • Accurate small-signal modeling of HFET's for millimeter-wave applications

    N. Rorsman;M. Garcia;C. Karlsson;H. Zirath

  • An empirical-table based FET model

    I. Angelov;N. Rorsman;J. Stenarson;M. Garcia

  • Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

    N. Wadefalk;A. Mellberg;I. Angelov;M.E. Barsky

  • Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C"V… characterization of metal-insulator-semiconductor-heterostructure capacitors

    Martin Fagerlind;Fredrik Allerstam;Einar Sveinbjörnsson;Niklas Rorsman

  • Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

    I. Angelov;K. Andersson;D. Schreurs;D. Xiao

  • A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

    D. Gustafsson;J. C. Cahuana;D. Kuylenstierna;I. Angelov

  • Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

    Anna Malmros;H. Blanck;Niklas Rorsman

  • Fabrication and characterization of field-plated buried-gate SiC MESFETs

    K. Andersson;M. Sudow;P.-A. Nilsson;E. Sveinbjornsson

  • Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

    V. Desmaris;M. Rudzinski;N. Rorsman;P.R. Hageman

  • A GaN–SiC hybrid material for high-frequency and power electronics

    Jr-Tai Chen;Johan Bergsten;Jun Lu;Erik Janzén

  • Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

    Olle Axelsson;Sebastian Gustafsson;Hans Hjelmgren;Niklas Rorsman

  • Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

    Sebastian Gustafsson;Jr-Tai Chen;Johan Bergsten;Urban Forsberg

  • An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

    M. Sudow;M. Fagerlind;M. Thorsell;K. Andersson

  • Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

    Jin-Yu Shiu;Jui-Chien Huang;V. Desmaris;Chia-Ta Chang

  • Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

    C. M. Andersson;D. Gustafsson;K. Yamanaka;E. Kuwata

  • Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

    Johan Bergsten;Mattias Thorsell;David Adolph;Jr-Tai Chen

  • Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation.

    J. Pettersson;P. Wahlgren;P. Delsing;D. B. Haviland

  • 1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor

    J. Olsson;N. Rorsman;L. Vestling;C. Fager

  • Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

    Anna Malmros;Piero Gamarra;Mattias Thorsell;Hans Hjelmgren

  • Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

    Ding-Yuan Chen;Anna Malmros;Mattias Thorsell;Hans Hjelmgren

  • Thermal Study of the High-Frequency Noise in GaN HEMTs

    M. Thorsell;K. Andersson;M. Fagerlind;M. Sudow

  • On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs

    I. Angelov;V. Desmaris;K. Dynefors;P.A. Nilsson

Frequent Co-Authors

Herbert Zirath
Herbert Zirath Chalmers University of Technology
Erik Janzén
Erik Janzén Linköping University
Christian Fager
Christian Fager Chalmers University of Technology
Wlodek Strupinski
Wlodek Strupinski Warsaw University of Technology
Edward Yi Chang
Edward Yi Chang National Yang Ming Chiao Tung University
Ivan Gueorguiev Ivanov
Ivan Gueorguiev Ivanov Linköping University
Eva Olsson
Eva Olsson Chalmers University of Technology
Martin Kuball
Martin Kuball University of Bristol
Olga Kazakova
Olga Kazakova National Physical Laboratory
Mikael Östling
Mikael Östling Royal Institute of Technology

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