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Niklas Rorsman

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 33 6098 5854 98 95 245 4416

Niklas Rorsman publications per year

The chart shows the history of publications by Niklas Rorsman between 1991 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Niklas Rorsman published across 35 years, from 1991 to 2025, averaging 7.3 papers a year. Output peaked at 19 publications in 2015. 10 of the 256 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1991 to 2025. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2015. 1991: 2 publications 1992: 5 publications 1993: 7 publications 1994: 4 publications 1995: 9 publications 1996: 7 publications 1997: 4 publications 1998: 1 publication 1999: 3 publications 2000: 7 publications 2001: 5 publications 2002: 7 publications 2003: 14 publications 2004: 13 publications 2005: 4 publications 2006: 11 publications 2007: 4 publications 2008: 12 publications 2009: 3 publications 2010: 7 publications 2011: 13 publications 2012: 7 publications 2013: 8 publications 2014: 5 publications 2015: 19 publications 2016: 10 publications 2017: 11 publications 2018: 12 publications 2019: 7 publications 2020: 4 publications 2021: 2 publications 2022: 13 publications 2023: 6 publications 2024: 7 publications 2025: 3 publications
1991 2025

256 publications in total across all disciplines

View publications per year as a table
Niklas Rorsman: publications per year, 1991 to 2025
Year Publications
1991 2
1992 5
1993 7
1994 4
1995 9
1996 7
1997 4
1998 1
1999 3
2000 7
2001 5
2002 7
2003 14
2004 13
2005 4
2006 11
2007 4
2008 12
2009 3
2010 7
2011 13
2012 7
2013 8
2014 5
2015 19
2016 10
2017 11
2018 12
2019 7
2020 4
2021 2
2022 13
2023 6
2024 7
2025 3
Total 256
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Niklas Rorsman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Niklas Rorsman sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 245 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 245
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Niklas Rorsman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Niklas Rorsman sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Niklas Rorsman is affiliated with Chalmers University of Technology in Sweden. Their research spans multiple overlapping fields including engineering, physics and astronomy, and materials science.

The scientist's main subfields of study encompass electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, atomic and molecular physics and optics, and materials chemistry.

Rorsman's work focuses primarily on semiconductor materials and devices, with an emphasis on GaN-based semiconductor devices and materials as well as Ga₂O₃ and related materials. Additional research topics include silicon carbide semiconductor technologies, advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, and ZnO doping and properties.

Frequent coauthors collaborating with Rorsman include:

  • Mattias Thorsell
  • Vanya Darakchieva
  • Jr-Tai Chen
  • Axel R. Persson
  • Ding-Yuan Chen

Rorsman has published multiple scientific papers in prominent venues. Notable recent papers include:

  • "Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors," 2020, IEEE Electron Device Letters
  • "Mg-doping and free-hole properties of hot-wall MOCVD GaN," 2022, Journal of Applied Physics
  • "High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a 'Buffer-Free' Heterostructure," 2022, IEEE Electron Device Letters
  • "Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer," 2021, IEEE Journal of the Electron Devices Society
  • "Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers," 2023, Applied Physics Letters

Rorsman's publication venues with multiple contributions include:

  • IEEE Transactions on Electron Devices
  • physica status solidi (a)
  • IEEE Electron Device Letters
  • Journal of Applied Physics
  • Applied Physics Letters

Best Publications

  • Accurate small-signal modeling of HFET's for millimeter-wave applications

    N. Rorsman;M. Garcia;C. Karlsson;H. Zirath

  • An empirical-table based FET model

    I. Angelov;N. Rorsman;J. Stenarson;M. Garcia

  • Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

    N. Wadefalk;A. Mellberg;I. Angelov;M.E. Barsky

  • Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C"V… characterization of metal-insulator-semiconductor-heterostructure capacitors

    Martin Fagerlind;Fredrik Allerstam;Einar Sveinbjörnsson;Niklas Rorsman

  • Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

    I. Angelov;K. Andersson;D. Schreurs;D. Xiao

  • A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

    D. Gustafsson;J. C. Cahuana;D. Kuylenstierna;I. Angelov

  • Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

    Anna Malmros;H. Blanck;Niklas Rorsman

  • Fabrication and characterization of field-plated buried-gate SiC MESFETs

    K. Andersson;M. Sudow;P.-A. Nilsson;E. Sveinbjornsson

  • Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

    V. Desmaris;M. Rudzinski;N. Rorsman;P.R. Hageman

  • A GaN–SiC hybrid material for high-frequency and power electronics

    Jr-Tai Chen;Johan Bergsten;Jun Lu;Erik Janzén

  • Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

    Olle Axelsson;Sebastian Gustafsson;Hans Hjelmgren;Niklas Rorsman

  • Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

    Sebastian Gustafsson;Jr-Tai Chen;Johan Bergsten;Urban Forsberg

  • An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

    M. Sudow;M. Fagerlind;M. Thorsell;K. Andersson

  • Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

    Jin-Yu Shiu;Jui-Chien Huang;V. Desmaris;Chia-Ta Chang

  • Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

    C. M. Andersson;D. Gustafsson;K. Yamanaka;E. Kuwata

  • Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

    Johan Bergsten;Mattias Thorsell;David Adolph;Jr-Tai Chen

  • Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation.

    J. Pettersson;P. Wahlgren;P. Delsing;D. B. Haviland

  • 1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor

    J. Olsson;N. Rorsman;L. Vestling;C. Fager

  • Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

    Anna Malmros;Piero Gamarra;Mattias Thorsell;Hans Hjelmgren

  • Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

    Ding-Yuan Chen;Anna Malmros;Mattias Thorsell;Hans Hjelmgren

  • Thermal Study of the High-Frequency Noise in GaN HEMTs

    M. Thorsell;K. Andersson;M. Fagerlind;M. Sudow

  • On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs

    I. Angelov;V. Desmaris;K. Dynefors;P.A. Nilsson

Frequent Co-Authors

Herbert Zirath
Herbert Zirath Chalmers University of Technology
Erik Janzén
Erik Janzén Linköping University
Christian Fager
Christian Fager Chalmers University of Technology
Wlodek Strupinski
Wlodek Strupinski Warsaw University of Technology
Edward Yi Chang
Edward Yi Chang National Yang Ming Chiao Tung University
Ivan Gueorguiev Ivanov
Ivan Gueorguiev Ivanov Linköping University
Eva Olsson
Eva Olsson Chalmers University of Technology
Martin Kuball
Martin Kuball University of Bristol
Olga Kazakova
Olga Kazakova National Physical Laboratory
Mikael Östling
Mikael Östling Royal Institute of Technology

External Links

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Publications: 25

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Fadhel M. Ghannouchi

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Bo Zhang

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Oliver Ambacher

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