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Tamotsu Hashizume

Tamotsu Hashizume

Hokkaido University
Japan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 44 11985 11587 750 715 381 8396

Tamotsu Hashizume publications per year

The chart shows the history of publications by Tamotsu Hashizume between 1966 and 2023, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Tamotsu Hashizume published across 58 years, from 1966 to 2023, averaging 6.8 papers a year. Output peaked at 26 publications in 2010. 2 of the 397 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1966 to 2023. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 2010. 1966: 1 publication 1967: 0 publications 1968: 0 publications 1969: 0 publications 1970: 0 publications 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 1 publication 1980: 0 publications 1981: 0 publications 1982: 0 publications 1983: 0 publications 1984: 1 publication 1985: 1 publication 1986: 0 publications 1987: 2 publications 1988: 0 publications 1989: 1 publication 1990: 2 publications 1991: 1 publication 1992: 3 publications 1993: 3 publications 1994: 5 publications 1995: 15 publications 1996: 20 publications 1997: 13 publications 1998: 10 publications 1999: 7 publications 2000: 8 publications 2001: 10 publications 2002: 9 publications 2003: 13 publications 2004: 8 publications 2005: 14 publications 2006: 22 publications 2007: 17 publications 2008: 18 publications 2009: 19 publications 2010: 26 publications 2011: 22 publications 2012: 14 publications 2013: 9 publications 2014: 10 publications 2015: 7 publications 2016: 13 publications 2017: 21 publications 2018: 13 publications 2019: 14 publications 2020: 8 publications 2021: 14 publications 2022: 1 publication 2023: 1 publication
1966 2023

397 publications in total across all disciplines

View publications per year as a table
Tamotsu Hashizume: publications per year, 1966 to 2023
Year Publications
1966 1
1967 0
1968 0
1969 0
1970 0
1971 0
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 1
1980 0
1981 0
1982 0
1983 0
1984 1
1985 1
1986 0
1987 2
1988 0
1989 1
1990 2
1991 1
1992 3
1993 3
1994 5
1995 15
1996 20
1997 13
1998 10
1999 7
2000 8
2001 10
2002 9
2003 13
2004 8
2005 14
2006 22
2007 17
2008 18
2009 19
2010 26
2011 22
2012 14
2013 9
2014 10
2015 7
2016 13
2017 21
2018 13
2019 14
2020 8
2021 14
2022 1
2023 1
Total 397
Download as CSV

Tamotsu Hashizume publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tamotsu Hashizume sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 370–389 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 381 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356 381
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Tamotsu Hashizume D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tamotsu Hashizume sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 44–45 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612 44
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Tamotsu Hashizume is affiliated with Hokkaido University in Japan and conducts research primarily in the fields of Physics and Astronomy, Engineering, and Materials Science. Their work spans subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Mechanics of Materials.

Their main research topics involve GaN-based semiconductor devices and materials, semiconductor materials and devices, Ga2O3 and related materials, Silicon Carbide Semiconductor Technologies, ZnO doping and properties, metal and thin film mechanics, and semiconductor materials and interfaces.

The scientist has contributed to multiple publications in well-known venues, including:

  • Journal of Applied Physics
  • AIP Advances
  • Applied Physics Express
  • Semiconductor Science and Technology
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Recent papers by Tamotsu Hashizume include:

  • Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation (2021, Journal of Applied Physics)
  • Interface characterization of Al2O3/m-plane GaN structure (2021, AIP Advances)
  • Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor (2020, AIP Advances)
  • Improved DC performance and current stability of ultrathin-Al 2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process (2020, Semiconductor Science and Technology)
  • Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction (2021, Applied Physics Express)

Frequent co-authors collaborating with Hashizume are:

  • Ryota Ochi
  • Erika Maeda
  • Toshihide Nabatame
  • Koji Shiozaki
  • Mari Inoue

Best Publications

  • Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

    Tamotsu Hashizume;Shinya Ootomo;Hideki Hasegawa

  • Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

    Hideki Hasegawa;Takanori Inagaki;Shinya Ootomo;Tamotsu Hashizume

  • Capacitance?Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

    Chihoko Mizue;Yujin Hori;Marcin Miczek;Tamotsu Hashizume

  • Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

    Tamotsu Hashizume;Shinya Ootomo;Takanori Inagaki;Hideki Hasegawa

  • Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

    K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  • Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors

    Marcin Miczek;Chihoko Mizue;Tamotsu Hashizume;Bogusława Adamowicz

  • Leakage mechanism in GaN and AlGaN Schottky interfaces

    Tamotsu Hashizume;Junji Kotani;Hideki Hasegawa

  • Insulated gate and surface passivation structures for GaN-based power transistors

    Zenji Yatabe;Joel T Asubar;Tamotsu Hashizume

  • Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

    Tamotsu Hashizume;Hideki Hasegawa

  • Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

    Tamotsu Hashizume;Shinya Ootomo;Susumu Oyama;Masanobu Konishi

  • Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

    Y. Hori;Z. Yatabe;T. Hashizume

  • Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

    Tamotsu Hashizume;Ryusuke Nakasaki

  • Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

    Yujin Hori;Chihoko Mizue;Tamotsu Hashizume

  • Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

    Tamotsu Hashizume;Tamotsu Hashizume;Egor Alekseev;Dimitris Pavlidis;Karim S. Boutros

  • State of the art on gate insulation and surface passivation for GaN-based power HEMTs

    Tamotsu Hashizume;Kenya Nishiguchi;Shota Kaneki;Jan Kuzmik

  • Capacitance–Voltage Characteristics of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN Structures and State Density Distribution at Al<sub>2</sub>O<sub>3</sub>/AlGaN Interface

    Unknown

  • Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures

    Junji Kotani;Masafumi Tajima;Seiya Kasai;Tamotsu Hashizume

  • Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

    Kota Ohi;Tamotsu Hashizume

  • Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

    Tamotsu Hashizume;Sanguan Anantathanasarn;Noboru Negoro;Eiichi Sano

  • Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

    Joel T. Asubar;Zenji Yatabe;Dagmar Gregusova;Tamotsu Hashizume;Tamotsu Hashizume

  • Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

    Kazushi Matsuo;Noboru Negoro;Junji Kotani;Tamotsu Hashizume

  • Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

    Junji Kotani;Tamotsu Hashizume;Hideki Hasegawa

Frequent Co-Authors

Hideki Hasegawa
Hideki Hasegawa Hokkaido University
Kazumasa Hiramatsu
Kazumasa Hiramatsu Mie University
Jun Suda
Jun Suda Nagoya University
Toshiki Makimoto
Toshiki Makimoto Waseda University
Naoki Kobayashi
Naoki Kobayashi University of Electro-Communications
Yasuo Koide
Yasuo Koide National Institute for Materials Science
Takashi Fukui
Takashi Fukui Hokkaido University
Hideo Ohno
Hideo Ohno Tohoku University
Tetsuzo Ueda
Tetsuzo Ueda Panasonic (Japan)
Hiromichi Ohta
Hiromichi Ohta Hokkaido University

External Links

Personal website of Tamotsu Hashizume

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Best Scientists Citing Tamotsu Hashizume

Hideki Hasegawa

Hideki Hasegawa

Hokkaido University

Publications: 78

Kevin J. Chen

Kevin J. Chen

Hong Kong University of Science and Technology

Publications: 45

Yue Hao

Yue Hao

Xidian University

Publications: 41

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 31

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 29

Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

Publications: 28

Fan Ren

Fan Ren

University of Florida

Publications: 27

Enrico Zanoni

Enrico Zanoni

University of Padua

Publications: 26

Fabrizio Roccaforte

Fabrizio Roccaforte

National Research Council (CNR)

Publications: 26

Tomas Palacios

Tomas Palacios

MIT

Publications: 25

Gaudenzio Meneghesso

Gaudenzio Meneghesso

University of Padua

Publications: 24

Sen Huang

Sen Huang

Chinese Academy of Sciences

Publications: 24

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Matteo Meneghini

University of Padua

Publications: 24

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Takashi Egawa

Nagoya Institute of Technology

Publications: 22

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James S. Speck

University of California, Santa Barbara

Publications: 22

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Publications: 22

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