Tamotsu Hashizume

Tamotsu Hashizume publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tamotsu Hashizume sits on this spectrum.

Tamotsu Hashizume D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tamotsu Hashizume sits on this spectrum.

Overview

Best Publications

• Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

  Tamotsu Hashizume;Shinya Ootomo;Hideki Hasegawa

  346
  Citations

• Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

  Hideki Hasegawa;Takanori Inagaki;Shinya Ootomo;Tamotsu Hashizume

  307
  Citations

• Capacitance?Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

  Chihoko Mizue;Yujin Hori;Marcin Miczek;Tamotsu Hashizume

  306
  Citations

• Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

  Tamotsu Hashizume;Shinya Ootomo;Takanori Inagaki;Hideki Hasegawa

  290
  Citations

• Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

  K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  287
  Citations

• Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors

  Marcin Miczek;Chihoko Mizue;Tamotsu Hashizume;Bogusława Adamowicz

  256
  Citations

• Leakage mechanism in GaN and AlGaN Schottky interfaces

  Tamotsu Hashizume;Junji Kotani;Hideki Hasegawa

  249
  Citations

• Insulated gate and surface passivation structures for GaN-based power transistors

  Zenji Yatabe;Joel T Asubar;Tamotsu Hashizume

  228
  Citations

• Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

  Tamotsu Hashizume;Hideki Hasegawa

  213
  Citations

• Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

  Tamotsu Hashizume;Shinya Ootomo;Susumu Oyama;Masanobu Konishi

  206
  Citations

• Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

  Y. Hori;Z. Yatabe;T. Hashizume

  193
  Citations

• Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

  Tamotsu Hashizume;Ryusuke Nakasaki

  168
  Citations

• Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

  Yujin Hori;Chihoko Mizue;Tamotsu Hashizume

  163
  Citations

• Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

  Tamotsu Hashizume;Tamotsu Hashizume;Egor Alekseev;Dimitris Pavlidis;Karim S. Boutros

  158
  Citations

• State of the art on gate insulation and surface passivation for GaN-based power HEMTs

  Tamotsu Hashizume;Kenya Nishiguchi;Shota Kaneki;Jan Kuzmik

  143
  Citations

• Capacitance–Voltage Characteristics of Al₂O₃/AlGaN/GaN Structures and State Density Distribution at Al₂O₃/AlGaN Interface

  Unknown

  141
  Citations

• Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures

  Junji Kotani;Masafumi Tajima;Seiya Kasai;Tamotsu Hashizume

  140
  Citations

• Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

  Kota Ohi;Tamotsu Hashizume

  130
  Citations

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

  Tamotsu Hashizume;Sanguan Anantathanasarn;Noboru Negoro;Eiichi Sano

  118
  Citations

• Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

  Joel T. Asubar;Zenji Yatabe;Dagmar Gregusova;Tamotsu Hashizume;Tamotsu Hashizume

  111
  Citations

• Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

  Kazushi Matsuo;Noboru Negoro;Junji Kotani;Tamotsu Hashizume

  108
  Citations

• Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

  Junji Kotani;Tamotsu Hashizume;Hideki Hasegawa

  102
  Citations