Tamotsu Hashizume

Overview

Best Publications

• Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

  Tamotsu Hashizume;Shinya Ootomo;Hideki Hasegawa

  346
  Citations

• Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

  Hideki Hasegawa;Takanori Inagaki;Shinya Ootomo;Tamotsu Hashizume

  307
  Citations

• Capacitance?Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

  Chihoko Mizue;Yujin Hori;Marcin Miczek;Tamotsu Hashizume

  306
  Citations

• Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

  Tamotsu Hashizume;Shinya Ootomo;Takanori Inagaki;Hideki Hasegawa

  290
  Citations

• Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

  K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  287
  Citations

• Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors

  Marcin Miczek;Chihoko Mizue;Tamotsu Hashizume;Bogusława Adamowicz

  256
  Citations

• Leakage mechanism in GaN and AlGaN Schottky interfaces

  Tamotsu Hashizume;Junji Kotani;Hideki Hasegawa

  249
  Citations

• Insulated gate and surface passivation structures for GaN-based power transistors

  Zenji Yatabe;Joel T Asubar;Tamotsu Hashizume

  228
  Citations

• Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

  Tamotsu Hashizume;Hideki Hasegawa

  213
  Citations

• Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

  Tamotsu Hashizume;Shinya Ootomo;Susumu Oyama;Masanobu Konishi

  206
  Citations

• Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

  Y. Hori;Z. Yatabe;T. Hashizume

  193
  Citations

• Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

  Tamotsu Hashizume;Ryusuke Nakasaki

  168
  Citations

• Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

  Yujin Hori;Chihoko Mizue;Tamotsu Hashizume

  163
  Citations

• Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

  Tamotsu Hashizume;Tamotsu Hashizume;Egor Alekseev;Dimitris Pavlidis;Karim S. Boutros

  158
  Citations

• State of the art on gate insulation and surface passivation for GaN-based power HEMTs

  Tamotsu Hashizume;Kenya Nishiguchi;Shota Kaneki;Jan Kuzmik

  143
  Citations

• Capacitance–Voltage Characteristics of Al₂O₃/AlGaN/GaN Structures and State Density Distribution at Al₂O₃/AlGaN Interface

  Unknown

  141
  Citations

• Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures

  Junji Kotani;Masafumi Tajima;Seiya Kasai;Tamotsu Hashizume

  140
  Citations

• Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

  Kota Ohi;Tamotsu Hashizume

  130
  Citations

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

  Tamotsu Hashizume;Sanguan Anantathanasarn;Noboru Negoro;Eiichi Sano

  118
  Citations

• Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

  Joel T. Asubar;Zenji Yatabe;Dagmar Gregusova;Tamotsu Hashizume;Tamotsu Hashizume

  111
  Citations

• Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

  Kazushi Matsuo;Noboru Negoro;Junji Kotani;Tamotsu Hashizume

  108
  Citations

• Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

  Junji Kotani;Tamotsu Hashizume;Hideki Hasegawa

  102
  Citations