Toshiki Makimoto

Toshiki Makimoto publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Toshiki Makimoto sits on this spectrum.

Toshiki Makimoto D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Toshiki Makimoto sits on this spectrum.

Overview

Best Publications

• An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  2374
  Citations

• Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

  Yasuyuki Kobayashi;Kazuhide Kumakura;Tetsuya Akasaka;Toshiki Makimoto

  561
  Citations

• Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

  K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  287
  Citations

• Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

  K. Ueda;M. Kasu;Y. Yamauchi;T. Makimoto

  255
  Citations

• Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  216
  Citations

• Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  189
  Citations

• High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

  Tetsuya Akasaka;Hideki Gotoh;Tadashi Saito;Toshiki Makimoto

  184
  Citations

• Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  180
  Citations

• 2 W/mm output power density at 1 GHz for diamond FETs

  M. Kasu;K. Ueda;H. Ye;Y. Yamauchi

  170
  Citations

• Diamond-based RF power transistors: Fundamentals and applications

  M. Kasu;K. Ueda;Y. Yamauchi;A. Tallaire

  141
  Citations

• Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  138
  Citations

• Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  134
  Citations

• Field emission properties of heavily Si-doped AlN in triode-type display structure

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  129
  Citations

• Flow-Rate Modulation Epitaxy of GaAs

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  128
  Citations

• Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  125
  Citations

• Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)

  Toshiki Makimoto;Hisao Saito;Toshio Nishida;Naoki Kobayashi

  124
  Citations

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

  Tamotsu Hashizume;Sanguan Anantathanasarn;Noboru Negoro;Eiichi Sano

  118
  Citations

• MOVPE growth of strained InGaAsN/GaAs quantum wells

  Hisao Saito;Toshiki Makimoto;Naoki Kobayashi

  116
  Citations

• Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

  Narihiko Maeda;Masanobu Hiroki;Noriyuki Watanabe;Yasuhiro Oda

  109
  Citations

• Influence of epitaxy on the surface conduction of diamond film

  M Kasu;M Kasu;M Kubovic;A Aleksov;N Teofilov

  106
  Citations