Toshiki Makimoto

Overview

Best Publications

• An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  2374
  Citations

• Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

  Yasuyuki Kobayashi;Kazuhide Kumakura;Tetsuya Akasaka;Toshiki Makimoto

  561
  Citations

• Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

  K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  287
  Citations

• Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

  K. Ueda;M. Kasu;Y. Yamauchi;T. Makimoto

  255
  Citations

• Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  216
  Citations

• Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  189
  Citations

• High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

  Tetsuya Akasaka;Hideki Gotoh;Tadashi Saito;Toshiki Makimoto

  184
  Citations

• Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  180
  Citations

• 2 W/mm output power density at 1 GHz for diamond FETs

  M. Kasu;K. Ueda;H. Ye;Y. Yamauchi

  170
  Citations

• Diamond-based RF power transistors: Fundamentals and applications

  M. Kasu;K. Ueda;Y. Yamauchi;A. Tallaire

  141
  Citations

• Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  138
  Citations

• Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  134
  Citations

• Field emission properties of heavily Si-doped AlN in triode-type display structure

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  129
  Citations

• Flow-Rate Modulation Epitaxy of GaAs

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  128
  Citations

• Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

  Yoshitaka Taniyasu;Makoto Kasu;Toshiki Makimoto

  125
  Citations

• Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)

  Toshiki Makimoto;Hisao Saito;Toshio Nishida;Naoki Kobayashi

  124
  Citations

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

  Tamotsu Hashizume;Sanguan Anantathanasarn;Noboru Negoro;Eiichi Sano

  118
  Citations

• MOVPE growth of strained InGaAsN/GaAs quantum wells

  Hisao Saito;Toshiki Makimoto;Naoki Kobayashi

  116
  Citations

• Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

  Narihiko Maeda;Masanobu Hiroki;Noriyuki Watanabe;Yasuhiro Oda

  109
  Citations

• Influence of epitaxy on the surface conduction of diamond film

  M Kasu;M Kasu;M Kubovic;A Aleksov;N Teofilov

  106
  Citations