Naoki Kobayashi

Overview

Best Publications

• High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors

  Toshio Nishida;Tomoyuki Ban;Naoki Kobayashi

  526
  Citations

• Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

  Toshio Nishida;Hisao Saito;Naoki Kobayashi

  428
  Citations

• Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN(0.42⩽x<1)

  Yoshitaka Taniyasu;Makoto Kasu;Naoki Kobayashi

  305
  Citations

• Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

  K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  287
  Citations

• Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  216
  Citations

• GaN-free transparent ultraviolet light-emitting diodes

  Toshio Nishida;Naoki Kobayashi;Tomoyuki Ban

  192
  Citations

• Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  189
  Citations

• High-temperature electron transport properties in AlGaN/GaN heterostructures

  Narihiko Maeda;Kotaro Tsubaki;Tadashi Saitoh;Naoki Kobayashi

  172
  Citations

• Protonation-induced chromism of pyridylethynyl-appended [core+exo]-type Au8 clusters. Resonance-coupled electronic perturbation through π-conjugated group.

  Naoki Kobayashi;Yutaro Kamei;Yukatsu Shichibu;Katsuaki Konishi

  171
  Citations

• PROCEDE DE DEPOT DE FILMS MINCES SEMI-CONDUCTEURS COMPOSES III-V OU II-VI SUR UN SUBSTRAT PAR DECOMPOSITION THERMIQUE

  Kobayashi Naoki;Makimoto Toshiki;Horikoschi Yoshiji

  154
  Citations

• Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy

  Naoki Kobayashi;Yoshiji Horikoshi

  141
  Citations

• Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  138
  Citations

• Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device

  Tetsuya Akasaka;Seigo Ando;Toshio Nishida;Naoki Kobayashi

  129
  Citations

• Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors

  Narihiko Maeda;Toshio Nishida;Naoki Kobayashi;Masaaki Tomizawa

  129
  Citations

• Flow-Rate Modulation Epitaxy of GaAs

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  128
  Citations

• Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)

  Toshiki Makimoto;Hisao Saito;Toshio Nishida;Naoki Kobayashi

  124
  Citations

• Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

  Toshio Nishida;Hisao Saito;Naoki Kobayashi

  117
  Citations

• MOVPE growth of strained InGaAsN/GaAs quantum wells

  Hisao Saito;Toshiki Makimoto;Naoki Kobayashi

  116
  Citations

• Cavity Polaritons in InGaN Microcavities at Room Temperature

  T. Tawara;H. Gotoh;T. Akasaka;N. Kobayashi

  111
  Citations

• Equilibrium multiatomic step structure of GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

  Makoto Kasu;Naoki Kobayashi

  109
  Citations