Naoki Kobayashi

Naoki Kobayashi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Naoki Kobayashi sits on this spectrum.

Naoki Kobayashi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Naoki Kobayashi sits on this spectrum.

Overview

Best Publications

• High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors

  Toshio Nishida;Tomoyuki Ban;Naoki Kobayashi

  526
  Citations

• Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

  Toshio Nishida;Hisao Saito;Naoki Kobayashi

  428
  Citations

• Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN(0.42⩽x<1)

  Yoshitaka Taniyasu;Makoto Kasu;Naoki Kobayashi

  305
  Citations

• Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

  K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  287
  Citations

• Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  216
  Citations

• GaN-free transparent ultraviolet light-emitting diodes

  Toshio Nishida;Naoki Kobayashi;Tomoyuki Ban

  192
  Citations

• Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  189
  Citations

• High-temperature electron transport properties in AlGaN/GaN heterostructures

  Narihiko Maeda;Kotaro Tsubaki;Tadashi Saitoh;Naoki Kobayashi

  172
  Citations

• Protonation-induced chromism of pyridylethynyl-appended [core+exo]-type Au8 clusters. Resonance-coupled electronic perturbation through π-conjugated group.

  Naoki Kobayashi;Yutaro Kamei;Yukatsu Shichibu;Katsuaki Konishi

  171
  Citations

• PROCEDE DE DEPOT DE FILMS MINCES SEMI-CONDUCTEURS COMPOSES III-V OU II-VI SUR UN SUBSTRAT PAR DECOMPOSITION THERMIQUE

  Kobayashi Naoki;Makimoto Toshiki;Horikoschi Yoshiji

  154
  Citations

• Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy

  Naoki Kobayashi;Yoshiji Horikoshi

  141
  Citations

• Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)

  Kazuhide Kumakura;Toshiki Makimoto;Naoki Kobayashi

  138
  Citations

• Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device

  Tetsuya Akasaka;Seigo Ando;Toshio Nishida;Naoki Kobayashi

  129
  Citations

• Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors

  Narihiko Maeda;Toshio Nishida;Naoki Kobayashi;Masaaki Tomizawa

  129
  Citations

• Flow-Rate Modulation Epitaxy of GaAs

  Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  128
  Citations

• Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)

  Toshiki Makimoto;Hisao Saito;Toshio Nishida;Naoki Kobayashi

  124
  Citations

• Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

  Toshio Nishida;Hisao Saito;Naoki Kobayashi

  117
  Citations

• MOVPE growth of strained InGaAsN/GaAs quantum wells

  Hisao Saito;Toshiki Makimoto;Naoki Kobayashi

  116
  Citations

• Cavity Polaritons in InGaN Microcavities at Room Temperature

  T. Tawara;H. Gotoh;T. Akasaka;N. Kobayashi

  111
  Citations

• Equilibrium multiatomic step structure of GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

  Makoto Kasu;Naoki Kobayashi

  109
  Citations