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Junichi Motohisa

Junichi Motohisa

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
6859
World Ranking
5706
National Ranking
241

Overview

Junichi Motohisa is affiliated with Hokkaido University in Japan and has made contributions primarily in the fields of Engineering and Physics and Astronomy. Their research focuses significantly on Biomedical Engineering, Electrical and Electronic Engineering, and Atomic and Molecular Physics, and Optics. Additional areas of study include Condensed Matter Physics and Materials Chemistry.

Their work extensively covers topics such as Nanowire Synthesis and Applications, Semiconductor Quantum Structures and Devices, and Advancements in Semiconductor Devices and Circuit Design. Other relevant topics include GaN-based semiconductor devices and materials, Photonic and Optical Devices, Semiconductor materials and devices, and Semiconductor materials and interfaces.

Among recent publications, the following papers highlight aspects of their research:

  • Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs, 2020, Nanotechnology
  • InP nanowire light-emitting diodes with different pn-junction structures, 2022, Nanotechnology
  • Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes, 2020, Scientific Reports
  • InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor, 2020, Applied Physics Letters
  • Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment, 2021, Applied Physics Express

Frequent co-authors working alongside Junichi Motohisa include:

  • Katsuhiro Tomioka
  • Yuki Azuma
  • Ziye Zheng
  • Hironori Gamo
  • Yuki Takeda

Their research has been published recurrently in several venues such as:

  • ECS Meeting Abstracts
  • Japanese Journal of Applied Physics
  • ECS Transactions
  • Nanotechnology
  • Scientific Reports

Best Publications

  • Control of InAs Nanowire Growth Directions on Si

    Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Takashi Fukui

  • GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

    Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Kenji Hiruma

  • Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

    Jinichiro Noborisaka;Junichi Motohisa;Takashi Fukui

  • Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays

    Premila Mohan;Junichi Motohisa;Takashi Fukui

  • Single GaAs/GaAsP coaxial core-shell nanowire lasers.

    Bin Hua;Junichi Motohisa;Yasunori Kobayashi;Shinjiroh Hara

  • Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

    Hajime Goto;Katsutoshi Nosaki;Katsuhiro Tomioka;Shinjiro Hara

  • Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

    J. Noborisaka;J. Motohisa;S. Hara;T. Fukui

  • Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

    J. Motohisa;J. Noborisaka;J. Takeda;M. Inari

  • Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy

    Premila Mohan;Junichi Motohisa;Takashi Fukui

  • Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.

    Katsuhiro Tomioka;Yasunori Kobayashi;Junichi Motohisa;Shinjiroh Hara

  • Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

    Keitaro Ikejiri;Jinichiro Noborisaka;Shinjiroh Hara;Junichi Motohisa

  • Growth of highly uniform InAs nanowire arrays by selective-area MOVPE

    K. Tomioka;P. Mohan;J. Noborisaka;S. Hara

  • Selective-area growth of III-V nanowires and their applications

    Katsuhiro Tomioka;Keitaro Ikejiri;Tomotaka Tanaka;Junichi Motohisa

  • Realization of conductive InAs nanotubes based on lattice-mismatched InP∕InAs core-shell nanowires

    Premila Mohan;Junichi Motohisa;Takashi Fukui

  • Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy.

    Keitaro Ikejiri;Takuya Sato;Hiroatsu Yoshida;Kenji Hiruma

  • Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

    Tomotaka Tanaka;Katsuhiro Tomioka;Shinjiroh Hara;Junichi Motohisa

  • Structural transition in indium phosphide nanowires.

    Yusuke Kitauchi;Yasunori Kobayashi;Katsuhiro Tomioka;Katsuhiro Tomioka;Shinjiro Hara

  • Coherent spectroscopy of optically gated charged single InGaAs quantum dots

    L Besombes;J J Baumberg;J Motohisa

  • Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires.

    Keitaro Ikejiri;Yusuke Kitauchi;Katsuhiro Tomioka;Katsuhiro Tomioka;Junichi Motohisa

  • Single electron transport and current quantization in a novel quantum dot structure

    Y. Nagamune;H. Sakaki;L. P. Kouwenhoven;L. C. Mur

  • InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application

    Masashi Akabori;Junichiro Takeda;Junichi Motohisa;Takashi Fukui

Frequent Co-Authors

Takashi Fukui
Takashi Fukui Hokkaido University
Yasuaki Masumoto
Yasuaki Masumoto University of Tsukuba
Hideki Hasegawa
Hideki Hasegawa Hokkaido University
Jeremy J. Baumberg
Jeremy J. Baumberg University of Cambridge
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Erik P. A. M. Bakkers
Erik P. A. M. Bakkers Eindhoven University of Technology
Deli Wang
Deli Wang University of California, San Diego
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Thomas Thundat
Thomas Thundat University at Buffalo, State University of New York
Zhong Lin Wang
Zhong Lin Wang Georgia Institute of Technology

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