2022 - Research.com Materials Science in Russia Leader Award
Vladimir G. Dubrovskii focuses on Nanowire, Nanotechnology, Molecular beam epitaxy, Condensed matter physics and Nucleation. His study on Vapor–liquid–solid method is often connected to Critical radius as part of broader study in Nanowire. His Nanotechnology study integrates concerns from other disciplines, such as Chemical physics and Optoelectronics, Silicon, Semiconductor.
His Molecular beam epitaxy research is multidisciplinary, incorporating perspectives in Crystallography, Fill factor, Energy conversion efficiency and Atmospheric temperature range. His work deals with themes such as Scanning electron microscope, Kinetic energy and Nanostructure, which intersect with Condensed matter physics. Vladimir G. Dubrovskii has included themes like Quantum dot, Supersaturation and Surface energy in his Nucleation study.
The scientist’s investigation covers issues in Nanowire, Nanotechnology, Nucleation, Condensed matter physics and Molecular beam epitaxy. Vladimir G. Dubrovskii combines subjects such as Chemical physics, Silicon, Semiconductor and Epitaxy with his study of Nanowire. The Nanotechnology study combines topics in areas such as Surface diffusion and Wurtzite crystal structure.
Nucleation is frequently linked to Crystallography in his study. His work carried out in the field of Condensed matter physics brings together such families of science as Monolayer, Quantum dot, Wetting layer, Crystal and Surface energy. His Molecular beam epitaxy research is multidisciplinary, incorporating elements of Molecular physics, Doping and Morphology.
Vladimir G. Dubrovskii mainly investigates Nanowire, Optoelectronics, Nucleation, Molecular beam epitaxy and Semiconductor. His Nanowire research integrates issues from Chemical physics, Surface diffusion, Silicon, Epitaxy and Condensed matter physics. The concepts of his Condensed matter physics study are interwoven with issues in Contact angle and Crystal.
Vladimir G. Dubrovskii interconnects Nanostructure, Reflection, Gaussian, Desorption and Vapor liquid in the investigation of issues within Nucleation. The subject of his Nanostructure research is within the realm of Nanotechnology. His Molecular beam epitaxy research incorporates themes from Gallium arsenide, Deposition, Morphology, Electron and Graphene.
Vladimir G. Dubrovskii mainly focuses on Nanowire, Molecular beam epitaxy, Optoelectronics, Doping and Silicon. His studies in Nanowire integrate themes in fields like Dopant, Phase, Semiconductor and Nucleation. His studies deal with areas such as Gaussian, Exponential function, Statistical physics and Distribution as well as Nucleation.
As part of his studies on Molecular beam epitaxy, Vladimir G. Dubrovskii often connects relevant subjects like Condensed matter physics. His Optoelectronics research is multidisciplinary, relying on both Electron, Quantum transport and Graphene. The study incorporates disciplines such as Symmetry, Vapor liquid, Aspect ratio and Engineering physics in addition to Silicon.
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Growth kinetics and crystal structure of semiconductor nanowires
V. G. Dubrovskii;N. V. Sibirev;J. C. Harmand;F. Glas.
Physical Review B (2008)
Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh.
Physical Review B (2005)
Nucleation Theory and Growth of Nanostructures
Vladimir G. Dubrovskii.
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.
V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand.
Physical Review E (2006)
Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy
G. E. Cirlin;G. E. Cirlin;V. G. Dubrovskii;V. G. Dubrovskii;Yu. B. Samsonenko;Yu. B. Samsonenko;A. D. Bouravleuv;A. D. Bouravleuv.
Physical Review B (2010)
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;I. P. Soshnikov.
Physical Review B (2009)
Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
V. G. Dubrovskii;N. V. Sibirev.
Physical Review B (2008)
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas.
Journal of Applied Physics (2007)
Semiconductor nanowhiskers: Synthesis, properties, and applications
V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov.
New mode of vapor-liquid-solid nanowire growth.
V. G. Dubrovskii;G. E. Cirlin;N. V. Sibirev;F. Jabeen.
Nano Letters (2011)
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