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Vladimir G. Dubrovskii

Vladimir G. Dubrovskii

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Materials Science
Russia
2022

D-Index & Metrics

Materials Science

D-Index
53
Citations
9844
World Ranking
9255
National Ranking
26

Vladimir G. Dubrovskii publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Vladimir G. Dubrovskii sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 357 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Vladimir G. Dubrovskii D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Vladimir G. Dubrovskii sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 53 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Russia Leader Award

Overview

Vladimir G. Dubrovskii is affiliated with St Petersburg University in the Russian Federation. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a considerable focus on subfields such as Biomedical Engineering, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, and Condensed Matter Physics.

The researcher has contributed extensively to topics including Nanowire Synthesis and Applications, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Materials and Devices, Quantum Dots Synthesis and Properties, Electronic and Structural Properties of Oxides, and Photonic and Optical Devices.

Vladimir G. Dubrovskii has authored papers published in several scientific venues, with frequent publications appearing in:

  • Nanomaterials
  • Nanotechnology
  • Crystal Growth & Design
  • Physical Review Materials
  • Technical Physics Letters

Their recent papers include:

  • "Phase Selection in Self-catalyzed GaAs Nanowires", 2020, Nano Letters
  • "Energetics and kinetics of monolayer formation in vapor-liquid-solid nanowire growth", 2020, Physical Review Materials
  • "Theory of MBE Growth of Nanowires on Reflecting Substrates", 2022, Nanomaterials
  • "Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties", 2022, Nanophotonics
  • "Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon", 2021, Nano Letters

Frequently collaborating co-authors include Egor D. Leshchenko, Ray LaPierre, Hadi Hijazi, А. С. Соколовский, and M. V. Maximov.

Best Publications

  • Growth kinetics and crystal structure of semiconductor nanowires

    V. G. Dubrovskii;N. V. Sibirev;J. C. Harmand;F. Glas

  • Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

    V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh

  • Nucleation Theory and Growth of Nanostructures

    Vladimir G. Dubrovskii

  • Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

    G. E. Cirlin;G. E. Cirlin;V. G. Dubrovskii;V. G. Dubrovskii;Yu. B. Samsonenko;Yu. B. Samsonenko;A. D. Bouravleuv;A. D. Bouravleuv

  • Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand

  • Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;I. P. Soshnikov

  • Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires

    V. G. Dubrovskii;N. V. Sibirev

  • Semiconductor nanowhiskers: Synthesis, properties, and applications

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

    Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas

  • New mode of vapor-liquid-solid nanowire growth.

    V. G. Dubrovskii;V. G. Dubrovskii;G. E. Cirlin;G. E. Cirlin;N. V. Sibirev;F. Jabeen

  • Kinetics of the initial stage of coherent island formation in heteroepitaxial systems

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

    G. E. Cirlin;V. G. Dubrovskii;I. P. Soshnikov;N. V. Sibirev

  • Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires.

    Vladimir G. Dubrovskii;Nickolai V. Sibirev

  • Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

    Vladimir Dubrovskii;Vladimir Dubrovskii;Tao Xu;Tao Xu;A Diaz Alvarez;Sebastien Plissard;Sebastien Plissard

  • III-Vナノワイヤの形状修飾:側壁上の核形成の役割

    V G Dubrovskii;N V Sibirev;G E Cirlin;M Tchernycheva

  • Template-Assisted Scalable Nanowire Networks

    Martin Friedl;Kris Cerveny;Pirmin Weigele;Gozde Tütüncüoglu

  • Role of nonlinear effects in nanowire growth and crystal phase

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;G. E. Cirlin;A. D. Bouravleuv

  • Phase Selection in Self-catalyzed GaAs Nanowires.

    Federico Panciera;Federico Panciera;Zhaslan Baraissov;Gilles Patriarche;Vladimir G Dubrovskii

  • Quantitative description for the growth rate of self-induced GaN nanowires

    Vincent Consonni;V. G. Dubrovskii;V. G. Dubrovskii;A. Trampert;L. Geelhaar

  • General form of the dependences of nanowire growth rate on the nanowire radius

    V.G. Dubrovskii;N.V. Sibirev

  • Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.

    Evelyne Gil;Evelyne Gil;Vladimir G. Dubrovskii;Vladimir G. Dubrovskii;Vladimir G. Dubrovskii;Geoffrey Avit;Geoffrey Avit;Yamina André;Yamina André

Frequent Co-Authors

G. E. Cirlin
G. E. Cirlin ITMO University
V. M. Ustinov
V. M. Ustinov Russian Academy of Sciences
Frank Glas
Frank Glas University of Paris-Saclay
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Peter Werner
Peter Werner Max Planck Society
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Connie J. Chang-Hasnain
Connie J. Chang-Hasnain University of California, Berkeley
Anna Fontcuberta i Morral
Anna Fontcuberta i Morral École Polytechnique Fédérale de Lausanne
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)

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