What is he best known for?
The fields of study he is best known for:
- Quantum mechanics
- Semiconductor
- Electron
Vladimir G. Dubrovskii focuses on Nanowire, Nanotechnology, Molecular beam epitaxy, Condensed matter physics and Nucleation.
His study on Vapor–liquid–solid method is often connected to Critical radius as part of broader study in Nanowire.
His Nanotechnology study integrates concerns from other disciplines, such as Chemical physics and Optoelectronics, Silicon, Semiconductor.
His Molecular beam epitaxy research is multidisciplinary, incorporating perspectives in Crystallography, Fill factor, Energy conversion efficiency and Atmospheric temperature range.
His work deals with themes such as Scanning electron microscope, Kinetic energy and Nanostructure, which intersect with Condensed matter physics.
Vladimir G. Dubrovskii has included themes like Quantum dot, Supersaturation and Surface energy in his Nucleation study.
His most cited work include:
- Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment (248 citations)
- Growth kinetics and crystal structure of semiconductor nanowires (241 citations)
- Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy (172 citations)
What are the main themes of his work throughout his whole career to date?
The scientist’s investigation covers issues in Nanowire, Nanotechnology, Nucleation, Condensed matter physics and Molecular beam epitaxy.
Vladimir G. Dubrovskii combines subjects such as Chemical physics, Silicon, Semiconductor and Epitaxy with his study of Nanowire.
The Nanotechnology study combines topics in areas such as Surface diffusion and Wurtzite crystal structure.
Nucleation is frequently linked to Crystallography in his study.
His work carried out in the field of Condensed matter physics brings together such families of science as Monolayer, Quantum dot, Wetting layer, Crystal and Surface energy.
His Molecular beam epitaxy research is multidisciplinary, incorporating elements of Molecular physics, Doping and Morphology.
He most often published in these fields:
- Nanowire (105.37%)
- Nanotechnology (63.43%)
- Nucleation (57.03%)
What were the highlights of his more recent work (between 2018-2021)?
- Nanowire (105.37%)
- Optoelectronics (29.16%)
- Nucleation (57.03%)
In recent papers he was focusing on the following fields of study:
Vladimir G. Dubrovskii mainly investigates Nanowire, Optoelectronics, Nucleation, Molecular beam epitaxy and Semiconductor.
His Nanowire research integrates issues from Chemical physics, Surface diffusion, Silicon, Epitaxy and Condensed matter physics.
The concepts of his Condensed matter physics study are interwoven with issues in Contact angle and Crystal.
Vladimir G. Dubrovskii interconnects Nanostructure, Reflection, Gaussian, Desorption and Vapor liquid in the investigation of issues within Nucleation.
The subject of his Nanostructure research is within the realm of Nanotechnology.
His Molecular beam epitaxy research incorporates themes from Gallium arsenide, Deposition, Morphology, Electron and Graphene.
Between 2018 and 2021, his most popular works were:
- Phase Selection in Self-catalyzed GaAs Nanowires. (23 citations)
- Fundamental aspects to localize self-catalyzed III-V nanowires on silicon. (19 citations)
- Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type? (13 citations)
In his most recent research, the most cited papers focused on:
- Quantum mechanics
- Semiconductor
- Electron
Vladimir G. Dubrovskii mainly focuses on Nanowire, Molecular beam epitaxy, Optoelectronics, Doping and Silicon.
His studies in Nanowire integrate themes in fields like Dopant, Phase, Semiconductor and Nucleation.
His studies deal with areas such as Gaussian, Exponential function, Statistical physics and Distribution as well as Nucleation.
As part of his studies on Molecular beam epitaxy, Vladimir G. Dubrovskii often connects relevant subjects like Condensed matter physics.
His Optoelectronics research is multidisciplinary, relying on both Electron, Quantum transport and Graphene.
The study incorporates disciplines such as Symmetry, Vapor liquid, Aspect ratio and Engineering physics in addition to Silicon.
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