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Vladimir G. Dubrovskii

Vladimir G. Dubrovskii

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Materials Science
Russia
2022

D-Index & Metrics

Materials Science

D-Index
53
Citations
9844
World Ranking
9257
National Ranking
26

Research.com Recognitions

  • 2022 - Research.com Materials Science in Russia Leader Award

Overview

Vladimir G. Dubrovskii is affiliated with St Petersburg University in the Russian Federation. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a considerable focus on subfields such as Biomedical Engineering, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, and Condensed Matter Physics.

The researcher has contributed extensively to topics including Nanowire Synthesis and Applications, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Materials and Devices, Quantum Dots Synthesis and Properties, Electronic and Structural Properties of Oxides, and Photonic and Optical Devices.

Vladimir G. Dubrovskii has authored papers published in several scientific venues, with frequent publications appearing in:

  • Nanomaterials
  • Nanotechnology
  • Crystal Growth & Design
  • Physical Review Materials
  • Technical Physics Letters

Their recent papers include:

  • "Phase Selection in Self-catalyzed GaAs Nanowires", 2020, Nano Letters
  • "Energetics and kinetics of monolayer formation in vapor-liquid-solid nanowire growth", 2020, Physical Review Materials
  • "Theory of MBE Growth of Nanowires on Reflecting Substrates", 2022, Nanomaterials
  • "Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties", 2022, Nanophotonics
  • "Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon", 2021, Nano Letters

Frequently collaborating co-authors include Egor D. Leshchenko, Ray LaPierre, Hadi Hijazi, А. С. Соколовский, and M. V. Maximov.

Best Publications

  • Growth kinetics and crystal structure of semiconductor nanowires

    V. G. Dubrovskii;N. V. Sibirev;J. C. Harmand;F. Glas

  • Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

    V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh

  • Nucleation Theory and Growth of Nanostructures

    Vladimir G. Dubrovskii

  • Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

    G. E. Cirlin;G. E. Cirlin;V. G. Dubrovskii;V. G. Dubrovskii;Yu. B. Samsonenko;Yu. B. Samsonenko;A. D. Bouravleuv;A. D. Bouravleuv

  • Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand

  • Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;I. P. Soshnikov

  • Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires

    V. G. Dubrovskii;N. V. Sibirev

  • Semiconductor nanowhiskers: Synthesis, properties, and applications

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

    Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas

  • New mode of vapor-liquid-solid nanowire growth.

    V. G. Dubrovskii;V. G. Dubrovskii;G. E. Cirlin;G. E. Cirlin;N. V. Sibirev;F. Jabeen

  • Kinetics of the initial stage of coherent island formation in heteroepitaxial systems

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

    G. E. Cirlin;V. G. Dubrovskii;I. P. Soshnikov;N. V. Sibirev

  • Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires.

    Vladimir G. Dubrovskii;Nickolai V. Sibirev

  • Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

    Vladimir Dubrovskii;Vladimir Dubrovskii;Tao Xu;Tao Xu;A Diaz Alvarez;Sebastien Plissard;Sebastien Plissard

  • III-Vナノワイヤの形状修飾:側壁上の核形成の役割

    V G Dubrovskii;N V Sibirev;G E Cirlin;M Tchernycheva

  • Template-Assisted Scalable Nanowire Networks

    Martin Friedl;Kris Cerveny;Pirmin Weigele;Gozde Tütüncüoglu

  • Role of nonlinear effects in nanowire growth and crystal phase

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;G. E. Cirlin;A. D. Bouravleuv

  • Phase Selection in Self-catalyzed GaAs Nanowires.

    Federico Panciera;Federico Panciera;Zhaslan Baraissov;Gilles Patriarche;Vladimir G Dubrovskii

  • Quantitative description for the growth rate of self-induced GaN nanowires

    Vincent Consonni;V. G. Dubrovskii;V. G. Dubrovskii;A. Trampert;L. Geelhaar

  • General form of the dependences of nanowire growth rate on the nanowire radius

    V.G. Dubrovskii;N.V. Sibirev

  • Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.

    Evelyne Gil;Evelyne Gil;Vladimir G. Dubrovskii;Vladimir G. Dubrovskii;Vladimir G. Dubrovskii;Geoffrey Avit;Geoffrey Avit;Yamina André;Yamina André

Frequent Co-Authors

G. E. Cirlin
G. E. Cirlin ITMO University
V. M. Ustinov
V. M. Ustinov Russian Academy of Sciences
Frank Glas
Frank Glas University of Paris-Saclay
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Peter Werner
Peter Werner Max Planck Society
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Connie J. Chang-Hasnain
Connie J. Chang-Hasnain University of California, Berkeley
Anna Fontcuberta i Morral
Anna Fontcuberta i Morral École Polytechnique Fédérale de Lausanne
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)

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