Her scientific interests lie mostly in Optoelectronics, Nanowire, Quantum well, Molecular beam epitaxy and Photoluminescence. Maria Tchernycheva regularly ties together related areas like Electroluminescence in her Optoelectronics studies. Her Nanowire study necessitates a more in-depth grasp of Nanotechnology.
The various areas that Maria Tchernycheva examines in her Quantum well study include Cathodoluminescence and Epitaxy. Her Molecular beam epitaxy research incorporates elements of Gallium nitride and Vapor–liquid–solid method. Maria Tchernycheva has included themes like Luminescence, Excited state and Condensed matter physics in her Photoluminescence study.
Maria Tchernycheva mainly focuses on Optoelectronics, Nanowire, Quantum well, Molecular beam epitaxy and Condensed matter physics. Her Optoelectronics study combines topics in areas such as Epitaxy and Nitride. Her Nanowire study improves the overall literature in Nanotechnology.
Her Quantum well research is multidisciplinary, incorporating elements of Wavelength, Gallium nitride, Absorption, Wide-bandgap semiconductor and Superlattice. Her study in Molecular beam epitaxy is interdisciplinary in nature, drawing from both Electron beam-induced current, Substrate, Doping and Vapor–liquid–solid method. Her Condensed matter physics research includes elements of Excited state and Molecular physics.
Maria Tchernycheva focuses on Optoelectronics, Nanowire, Molecular beam epitaxy, Light-emitting diode and Epitaxy. Her research in Optoelectronics intersects with topics in Graphene, Quantum well and Nitride. The various areas that Maria Tchernycheva examines in her Quantum well study include Photocurrent, Metalorganic vapour phase epitaxy, Absorption and Responsivity.
The concepts of her Nanowire study are interwoven with issues in Doping, Electron beam-induced current, Microscopy, Cathodoluminescence and Layer. Her biological study spans a wide range of topics, including Energy conversion efficiency, Luminescence, Commutation, Passivation and Power electronics. Her research integrates issues of Silicon and Dopant in her study of Epitaxy.
Her primary areas of study are Nanowire, Optoelectronics, Molecular beam epitaxy, Epitaxy and Light-emitting diode. Nanotechnology covers Maria Tchernycheva research in Nanowire. Her Optoelectronics research is multidisciplinary, relying on both Layer and Quantum well.
Her studies in Quantum well integrate themes in fields like Metalorganic vapour phase epitaxy, Atom probe, Absorption, Electroluminescence and Responsivity. Her research in Molecular beam epitaxy focuses on subjects like Graphene, which are connected to Nanodot, Amorphous solid, Luminescence, Exciton and Blueshift. Her Light-emitting diode research incorporates elements of Focus and Nitride.
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Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells
M. Tchernycheva;L. Nevou;L. Doyennette;F. H. Julien.
Physical Review B (2006)
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
Prem K. Kandaswamy;Fabien Guillot;Edith Bellet-Amalric;Eva Monroy.
Journal of Applied Physics (2008)
M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
Robert Koester;Jun-Seok Hwang;Damien Salomon;Xiaojun Chen.
Nano Letters (2011)
Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
Luiz Fernando Zagonel;Stefano Mazzucco;Marcel Tencé;Katia March.
Nano Letters (2011)
InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact
M. Tchernycheva;P. Lavenus;H. Zhang;A. V. Babichev.
Nano Letters (2014)
Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire
L. Rigutti;M. Tchernycheva;A. De Luna Bugallo;G. Jacopin.
Nano Letters (2010)
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas.
Journal of Applied Physics (2007)
Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors
M. Tchernycheva;A. Messanvi;A. de Luna Bugallo;G. Jacopin.
Nano Letters (2014)
Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
Xing Dai;Agnes Messanvi;Hezhi Zhang;Christophe Durand.
Nano Letters (2015)
Growth and characterization of InP nanowires with InAsP insertions.
Maria Tchernycheva;George E. Cirlin;Gilles Patriarche;Laurent Travers.
Nano Letters (2007)
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