World's Best Scientists 2026 revealed!
Maria Tchernycheva

Maria Tchernycheva

D-Index & Metrics

Materials Science

D-Index
57
Citations
9298
World Ranking
8085
National Ranking
220

Maria Tchernycheva publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Maria Tchernycheva sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 299 publications — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Maria Tchernycheva D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Maria Tchernycheva sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Maria Tchernycheva is a researcher affiliated with the University of Paris-Saclay in France. Their work spans multiple domains within engineering, materials science, and physics and astronomy, with significant contributions to both fundamental and applied research fields.

The main fields of study addressed in their publications include:

  • Engineering
  • Materials Science
  • Physics and Astronomy

Within these broader fields, the subfields of study frequently covered by Tchernycheva encompass:

  • Materials Chemistry
  • Condensed Matter Physics
  • Biomedical Engineering
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

The scholar has focused on several principal research topics, including:

  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Nanowire Synthesis and Applications
  • Advanced Sensor and Energy Harvesting Materials
  • Semiconductor Quantum Structures and Devices
  • Quantum Dots Synthesis And Properties

Tchernycheva's recent scientific output includes papers published in a variety of journals. Notable recent publications are:

  • "Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact," 2020, Journal of Materials Chemistry C
  • "Enriching the Deep-Red Emission in (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) Compositions for Light-Emitting Diodes," 2023, ACS Applied Materials & Interfaces
  • "Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer-Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications," 2020, ACS Applied Nano Materials
  • "The elevated colour rendering of white-LEDs by microwave-synthesized red-emitting (Li, Mg)3RbGe8O18:Mn4+ nanophosphors," 2021, Dalton Transactions
  • "ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells," 2020, ACS Applied Materials & Interfaces

The scientist frequently publishes in specific journals that have hosted multiple works. These venues include:

  • Nanotechnology
  • Nanomaterials
  • Crystal Growth & Design
  • Applied Physics Letters
  • ACS Applied Materials & Interfaces

Collaborative work constitutes a significant aspect of Tchernycheva's research. Frequent co-authors involved in their studies are:

  • F. H. Julien
  • N. Gogneau
  • Ivan S. Mukhin
  • Nuño Amador-Méndez
  • A. V. Babichev

Best Publications

  • Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells

    M. Tchernycheva;L. Nevou;L. Doyennette;F. H. Julien

  • GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

    Prem K. Kandaswamy;Fabien Guillot;Edith Bellet-Amalric;Eva Monroy

  • M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

    Robert Koester;Jun-Seok Hwang;Damien Salomon;Xiaojun Chen

  • Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

    Xing Dai;Agnes Messanvi;Agnes Messanvi;Hezhi Zhang;Christophe Durand

  • Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

    Luiz Fernando Zagonel;Stefano Mazzucco;Marcel Tencé;Katia March

  • InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact

    M. Tchernycheva;P. Lavenus;H. Zhang;A. V. Babichev;A. V. Babichev;A. V. Babichev

  • Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire

    L. Rigutti;M. Tchernycheva;A. De Luna Bugallo;G. Jacopin

  • Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

    M. Tchernycheva;A. Messanvi;A. Messanvi;A. de Luna Bugallo;G. Jacopin

  • Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

    Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas

  • Growth and characterization of InP nanowires with InAsP insertions.

    Maria Tchernycheva;George E. Cirlin;Gilles Patriarche;Laurent Travers

  • Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy:structural and optical characterization

    M. Tchernycheva;M. Tchernycheva;C. Sartel;G. Cirlin;L. Travers

  • GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev;H. Zhang;P. Lavenus;F. H. Julien

  • Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

    A. Vardi;G. Bahir;F. Guillot;C. Bougerol

  • Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

    M Tchernycheva;J C Harmand;G Patriarche;L Travers

  • III-Vナノワイヤの形状修飾:側壁上の核形成の役割

    V G Dubrovskii;N V Sibirev;G E Cirlin;M Tchernycheva

  • Epitaxy of GaN Nanowires on Graphene.

    Vishnuvarthan Kumaresan;Ludovic Largeau;Ali Madouri;Frank Glas

  • Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

    H. Zhang;A. V. Babichev;G. Jacopin;P. Lavenus

  • Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

    S. Nicolay;J.-F. Carlin;E. Feltin;R. Butté

  • Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

    A. Helman;M. Tchernycheva;A. Lusson;E. Warde

  • GaN/AlGaN intersubband optoelectronic devices

    H Machhadani;P Kandaswamy;S Sakr;A Vardi

Frequent Co-Authors

Eva Monroy
Eva Monroy Grenoble Alpes University
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
G. E. Cirlin
G. E. Cirlin ITMO University
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Ludovic Largeau
Ludovic Largeau University of Paris-Saclay
Frank Glas
Frank Glas University of Paris-Saclay
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Stéphane Collin
Stéphane Collin Centre national de la recherche scientifique, CNRS
Raffaele Colombelli
Raffaele Colombelli University of Paris-Saclay
Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University

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