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Materials Science

D-Index
45
Citations
6513
World Ranking
11843
National Ranking
364

Overview

Ludovic Largeau is affiliated with the University of Paris-Saclay in France and has contributed extensively to research in materials science, engineering, and physics and astronomy. Their work encompasses a variety of subfields including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, condensed matter physics, and electronic, optical, and magnetic materials.

The scientist's research topics focus on semiconductor devices and materials, particularly emphasizing GaN-based technologies, ZnO doping and properties, Ga2O3 and related materials, and photonic and optical devices. Additional areas include ferroelectric and negative capacitance devices, electronic and structural properties of oxides, as well as ferroelectric and piezoelectric materials.

Recent papers authored or co-authored by Ludovic Largeau include:

  • Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy, 2022, Physical Review Materials
  • Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices, 2022, ACS Applied Nano Materials
  • Magneto-Ionics in Annealed W/CoFeB/HfO2 Thin Films, 2022, Advanced Materials Interfaces
  • Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes, 2020, Nanotechnology
  • Ferroelectricity in Epitaxial Tetragonal ZrO2 Thin Films, 2023, Advanced Electronic Materials

Ludovic Largeau frequently collaborates with several researchers in their field. Among their most common co-authors are Thomas Maroutian, Sylvia Matzen, Philippe Lecoeur, Laurent Vivien, and Ali El Boutaybi.

Their work is published regularly in prominent venues such as arXiv (Cornell University), Crystal Growth & Design, Journal of Applied Physics, Advanced Materials Interfaces, and Nanotechnology. These venues reflect the multidisciplinary character of their research within materials science and related engineering fields.

Best Publications

  • Optical spectroscopy of two-dimensional layered (C(6)H(5)C(2)H(4)-NH(3))(2)-PbI(4) perovskite.

    K. Gauthron;J. S. Lauret;L. Doyennette;G. Lanty

  • Optical spectroscopy of two-dimensional layered $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}-PbI_{4}$ perovskite

    K. Gauthron;J. S. Lauret;L. Doyennette;G. Lanty

  • Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs

    R. Teissier;D. Sicault;J. C. Harmand;G. Ungaro

  • Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

    J. C. Harmand;G. Ungaro;L. Largeau;G. Le Roux

  • Epitaxy of GaN Nanowires on Graphene.

    Vishnuvarthan Kumaresan;Ludovic Largeau;Ali Madouri;Frank Glas

  • Surface-acoustic-wave-driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers

    L. Thevenard;L. Thevenard;Catherine Gourdon;Catherine Gourdon;Jean-Yves Prieur;Jean-Yves Prieur;H.J von Bardeleben;H.J von Bardeleben

  • GaNAsSb: how does it compare with other dilute III-V-nitride alloys?

    J.-C. Harmand;A. Caliman;E. V. K. Rao;L. Largeau

  • Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111).

    L Largeau;D L Dheeraj;M Tchernycheva;G E Cirlin

  • Recent advances in germanium emission [Invited]

    P. Boucaud;M. El Kurdi;A. Ghrib;M. Prost

  • Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

    G. Delhaye;C. Merckling;M. El-Kazzi;G. Saint-Girons

  • Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

    G. Jacopin;L. Rigutti;L. Largeau;F. Fortuna

  • Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

    E Galopin;L Largeau;G Patriarche;L Travers

  • Recent advances in germanium emission

    P. Boucaud;A. Ghrib;F. Aniel;X. Checoury

  • High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition

    R. Jakomin;M. de Kersauson;M. El Kurdi;L. Largeau

  • Metamorphic approach to single quantum dot emission at 1.55 μm on GaAs substrate

    E. S. Semenova;R. Hostein;G. Patriarche;O. Mauguin

  • Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

    A. Ouerghi;R. Belkhou;M. Marangolo;M. G. Silly

  • Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.

    Gilles Patriarche;Frank Glas;Maria Tchernycheva;Corinne Sartel

  • Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.

    M. Tchernycheva;V. Neplokh;H. Zhang;P. Lavenus

  • Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

    L. Thevenard;Ludovic Largeau;Olivia Mauguin;Gilles Patriarche

  • Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers

    Guillaume Saint-Girons;P. Regreny;L. Largeau;G. Patriarche

  • Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers

    Aristide Lemaître;Audrey Miard;Laurent Travers;Olivia Mauguin

  • Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys

    M. Cubukcu;H. J. von Bardeleben;Kh. Khazen;J. L. Cantin

Frequent Co-Authors

Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Aristide Lemaître
Aristide Lemaître University of Paris-Saclay
Isabelle Sagnes
Isabelle Sagnes Centre for Nanosciences and Nanotechnologies
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Frank Glas
Frank Glas University of Paris-Saclay
Guy Hollinger
Guy Hollinger École Centrale de Lyon
Eric Cassan
Eric Cassan University of Paris-Saclay
Laurent Vivien
Laurent Vivien University of Paris-Saclay
Delphine Marris-Morini
Delphine Marris-Morini University of Paris-Saclay

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