World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
6513
World Ranking
11841
National Ranking
364

Ludovic Largeau publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ludovic Largeau sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 272 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Ludovic Largeau D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ludovic Largeau sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Ludovic Largeau is affiliated with the University of Paris-Saclay in France and has contributed extensively to research in materials science, engineering, and physics and astronomy. Their work encompasses a variety of subfields including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, condensed matter physics, and electronic, optical, and magnetic materials.

The scientist's research topics focus on semiconductor devices and materials, particularly emphasizing GaN-based technologies, ZnO doping and properties, Ga2O3 and related materials, and photonic and optical devices. Additional areas include ferroelectric and negative capacitance devices, electronic and structural properties of oxides, as well as ferroelectric and piezoelectric materials.

Recent papers authored or co-authored by Ludovic Largeau include:

  • Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy, 2022, Physical Review Materials
  • Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices, 2022, ACS Applied Nano Materials
  • Magneto-Ionics in Annealed W/CoFeB/HfO2 Thin Films, 2022, Advanced Materials Interfaces
  • Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes, 2020, Nanotechnology
  • Ferroelectricity in Epitaxial Tetragonal ZrO2 Thin Films, 2023, Advanced Electronic Materials

Ludovic Largeau frequently collaborates with several researchers in their field. Among their most common co-authors are Thomas Maroutian, Sylvia Matzen, Philippe Lecoeur, Laurent Vivien, and Ali El Boutaybi.

Their work is published regularly in prominent venues such as arXiv (Cornell University), Crystal Growth & Design, Journal of Applied Physics, Advanced Materials Interfaces, and Nanotechnology. These venues reflect the multidisciplinary character of their research within materials science and related engineering fields.

Best Publications

  • Optical spectroscopy of two-dimensional layered (C(6)H(5)C(2)H(4)-NH(3))(2)-PbI(4) perovskite.

    K. Gauthron;J. S. Lauret;L. Doyennette;G. Lanty

  • Optical spectroscopy of two-dimensional layered $(C_{6}H_{5}C_{2}H_{4}-NH_{3})_{2}-PbI_{4}$ perovskite

    K. Gauthron;J. S. Lauret;L. Doyennette;G. Lanty

  • Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs

    R. Teissier;D. Sicault;J. C. Harmand;G. Ungaro

  • Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

    J. C. Harmand;G. Ungaro;L. Largeau;G. Le Roux

  • Epitaxy of GaN Nanowires on Graphene.

    Vishnuvarthan Kumaresan;Ludovic Largeau;Ali Madouri;Frank Glas

  • Surface-acoustic-wave-driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers

    L. Thevenard;L. Thevenard;Catherine Gourdon;Catherine Gourdon;Jean-Yves Prieur;Jean-Yves Prieur;H.J von Bardeleben;H.J von Bardeleben

  • GaNAsSb: how does it compare with other dilute III-V-nitride alloys?

    J.-C. Harmand;A. Caliman;E. V. K. Rao;L. Largeau

  • Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111).

    L Largeau;D L Dheeraj;M Tchernycheva;G E Cirlin

  • Recent advances in germanium emission [Invited]

    P. Boucaud;M. El Kurdi;A. Ghrib;M. Prost

  • Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

    G. Delhaye;C. Merckling;M. El-Kazzi;G. Saint-Girons

  • Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

    G. Jacopin;L. Rigutti;L. Largeau;F. Fortuna

  • Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

    E Galopin;L Largeau;G Patriarche;L Travers

  • Recent advances in germanium emission

    P. Boucaud;A. Ghrib;F. Aniel;X. Checoury

  • High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition

    R. Jakomin;M. de Kersauson;M. El Kurdi;L. Largeau

  • Metamorphic approach to single quantum dot emission at 1.55 μm on GaAs substrate

    E. S. Semenova;R. Hostein;G. Patriarche;O. Mauguin

  • Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

    A. Ouerghi;R. Belkhou;M. Marangolo;M. G. Silly

  • Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.

    Gilles Patriarche;Frank Glas;Maria Tchernycheva;Corinne Sartel

  • Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.

    M. Tchernycheva;V. Neplokh;H. Zhang;P. Lavenus

  • Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

    L. Thevenard;Ludovic Largeau;Olivia Mauguin;Gilles Patriarche

  • Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers

    Guillaume Saint-Girons;P. Regreny;L. Largeau;G. Patriarche

  • Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers

    Aristide Lemaître;Audrey Miard;Laurent Travers;Olivia Mauguin

  • Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys

    M. Cubukcu;H. J. von Bardeleben;Kh. Khazen;J. L. Cantin

Frequent Co-Authors

Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Aristide Lemaître
Aristide Lemaître University of Paris-Saclay
Isabelle Sagnes
Isabelle Sagnes Centre for Nanosciences and Nanotechnologies
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Frank Glas
Frank Glas University of Paris-Saclay
Guy Hollinger
Guy Hollinger École Centrale de Lyon
Eric Cassan
Eric Cassan University of Paris-Saclay
Laurent Vivien
Laurent Vivien University of Paris-Saclay
Delphine Marris-Morini
Delphine Marris-Morini University of Paris-Saclay

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