World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
USA
2025
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Electronics and Electrical Engineering
Australia
2023

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
95
Citations
34313
World Ranking
241
National Ranking
123

Materials Science

D-Index
100
Citations
36234
World Ranking
1057
National Ranking
349

James S. Harris publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where James S. Harris sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,154 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

James S. Harris D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where James S. Harris sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 95 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Australia Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Australia Leader Award
  • 2022 - Research.com Materials Science in Australia Leader Award
  • 2011 - Member of the National Academy of Engineering For contributions to epitaxial growth of compound semiconductor materials and their applications.

Overview

James S. Harris is affiliated with Stanford University in the United States and has made contributions primarily in the fields of engineering and physics and astronomy. Their research encompasses various topics related to photonics, materials science, and neuroscience.

The scientist's main research topics include:

  • Photonic and Optical Devices
  • Ga2O3 and related materials
  • Photorefractive and Nonlinear Optics
  • Neuroscience and Neural Engineering
  • CCD and CMOS Imaging Sensors
  • Photoreceptor and optogenetics research
  • Nanowire Synthesis and Applications

James S. Harris's work spans subfields such as electrical and electronic engineering, electronic, optical and magnetic materials, atomic and molecular physics and optics, cellular and molecular neuroscience, and biomedical engineering.

They have authored several recent papers, including:

  • "Vertical-junction photodiodes for smaller pixels in retinal prostheses," 2021, published in Journal of Neural Engineering
  • "Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission," 2020, published in Materials Today
  • "Web3 Challenges and Opportunities for the Market," 2022, published in arXiv (Cornell University)
  • "Low-loss GaOx-core/SiO2-cladding planar waveguides on Si substrate," 2020, published in Optics Express
  • "Silicon nitride waveguide as a power delivery component for dielectric laser accelerators," 2020, published in Conference on Lasers and Electro-Optics

Their frequent co-authors include Karel Urbánek, Robert L. Byer, Si Tan, Huiyang Deng, and Yu Miao. The most frequent venues for their publications are Conference on Lasers and Electro-Optics, Journal of Neural Engineering, Materials Today, Optics Express, and arXiv (Cornell University).

James S. Harris was recognized as a Member of the National Academy of Engineering in 2011 for contributions to epitaxial growth of compound semiconductor materials and their applications.

Best Publications

  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

    Yu-Hsuan Kuo;Yong Kyu Lee;Yangsi Ge;Shen Ren

  • Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30

    Jieyang Jia;Linsey Christine Seitz;Jesse D. Benck;Yijie Huo

  • Vertically aligned and electronically coupled growth induced InAs islands in GaAs.

    G. S. Solomon;J. A. Trezza;A. F. Marshall;J. S. Harris

  • Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system

    K. Matsumoto;M. Ishii;K. Segawa;Y. Oka

  • Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100).

    X. Jiang;X. Jiang;R. Wang;R. Wang;R. M. Shelby;R. M. Macfarlane

  • Centrality dependence of charged particle production at large transverse momentum in Pb-Pb collisions at root s(NN)=2.76 TeV

    Johan Alme;Hege Austrheim Erdal;Håvard Helstrup;Kristin Fanebust Hetland

  • Measurement of isotype heterojunction barriers by C‐V profiling

    H. Kroemer;Wu‐Yi Chien;J. S. Harris;D. D. Edwall

  • Neural stimulation with a carbon nanotube microelectrode array.

    Ke Wang;Harvey A. Fishman;Hongjie Dai;James S. Harris

  • Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser

    Bryan Ellis;Marie A. Mayer;Marie A. Mayer;Gary Shambat;Tomas Sarmiento

  • Photovoltaic retinal prosthesis with high pixel density

    Keith Mathieson;James Loudin;Georges Goetz;Philip Huie

  • Improved dispersion relations for GaAs and applications to nonlinear optics

    T. Skauli;P. S. Kuo;K. L. Vodopyanov;T. J. Pinguet

  • Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

    T. I. Kamins;R. Stanley Williams;D. P. Basile;T. Hesjedal

  • Photovoltaic restoration of sight with high visual acuity

    Henri Lorach;Georges Goetz;Richard Smith;Xin Lei

  • Observation of Stark shifts in quantum well intersubband transitions

    Alex Harwit;J. S. Harris

  • Alignment of the ALICE Inner Tracking System with cosmic-ray tracks

    K. Aamodt;N. Abel;U. Abeysekara;A. Abrahantes Quintana

  • Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

    Sylvia G. Spruytte;Christopher W. Coldren;James S. Harris;William Wampler

  • Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

    Robert Chen;Hai Lin;Yijie Huo;Charles Hitzman

  • All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion

    L. A. Eyres;P. J. Tourreau;T. J. Pinguet;C. B. Ebert

  • Optical parametric oscillation in quasi-phase-matched GaAs

    K.L. Vodopyanov;O. Levi;P.S. Kuo;T.J. Pinguet

  • Electrically driven subwavelength optical nanocircuits

    Kevin C. Y. Huang;Kevin C. Y. Huang;Min-Kyo Seo;Min-Kyo Seo;Tomas Sarmiento;Yijie Huo

  • Observation of the antimatter helium-4 nucleus

    H. Agakishiev;M. M. Aggarwal;Z. Ahammed;A. V. Alakhverdyants

  • GaInNAs long-wavelength lasers: progress and challenges

    J S Harris

  • Ultra-low Threshold electrically pumped quantum dot photonic crystal nanocavity laser

    Bryan Ellis;Marie A. Mayer;Gary Shambat;Tomas Sarmiento

Frequent Co-Authors

Theodore I. Kamins
Theodore I. Kamins Stanford University
Martin M. Fejer
Martin M. Fejer Stanford University
Mark A. Wistey
Mark A. Wistey Texas State University
Seth R. Bank
Seth R. Bank The University of Texas at Austin
Jelena Vuckovic
Jelena Vuckovic Stanford University
Darrell G. Schlom
Darrell G. Schlom Cornell University
Eric F. Morand
Eric F. Morand Monash University
Byung-Gook Park
Byung-Gook Park Seoul National University
Konstantin L. Vodopyanov
Konstantin L. Vodopyanov University of Central Florida
Shanhui Fan
Shanhui Fan Stanford University

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