World's Best Scientists 2026 revealed!
Theodore I. Kamins

Theodore I. Kamins

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
77
Citations
26371
World Ranking
604
National Ranking
271

Materials Science

D-Index
80
Citations
27557
World Ranking
2662
National Ranking
757

Theodore I. Kamins publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Theodore I. Kamins sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 489 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Theodore I. Kamins D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Theodore I. Kamins sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 77 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1991 - IEEE Fellow For contributions to materials, process, design, and education in semiconductor electronics.

Overview

Theodore I. Kamins is affiliated with Stanford University in the United States. Their research primarily spans the fields of neuroscience and engineering, with significant contributions to cellular and molecular neuroscience as well as electrical and electronic engineering.

Their work covers several specialized subfields including:

  • Cellular and Molecular Neuroscience
  • Electrical and Electronic Engineering
  • Molecular Biology
  • Cognitive Neuroscience
  • Biomedical Engineering

The main topics explored by Kamins throughout their career focus on intersections between neuroscience and engineering, including:

  • Neuroscience and Neural Engineering
  • Photoreceptor and Optogenetics Research
  • Advanced Memory and Neural Computing
  • Retinal Development and Disorders
  • EEG and Brain-Computer Interfaces
  • Nanowire Synthesis and Applications
  • Silicon and Solar Cell Technologies

Recent publications by Theodore I. Kamins include:

  • "Electronic photoreceptors enable prosthetic visual acuity matching the natural resolution in rats" (2022), published in Nature Communications
  • "Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0%" (2020), published in Nano Energy
  • "Vertical-junction photodiodes for smaller pixels in retinal prostheses" (2021), published in Journal of Neural Engineering
  • "Cellular migration into a subretinal honeycomb-shaped prosthesis for high-resolution prosthetic vision" (2023), published in Proceedings of the National Academy of Sciences
  • "3D electronic implants in subretinal space: Long-term follow-up in rodents" (2024), published in Biomaterials

Kamins frequently publishes in venues such as:

  • bioRxiv (Cold Spring Harbor Laboratory)
  • Journal of Neural Engineering
  • Nature Communications
  • Nano Energy
  • Proceedings of the National Academy of Sciences

Collaborations have been an important part of their research activities. Frequent co-authors include:

  • Ludwig Galambos
  • Keith Mathieson
  • Daniel Palanker
  • Andrew Shin
  • Mohajeet Bhuckory

Theodore I. Kamins was recognized as an IEEE Fellow in 1991 for contributions to materials, process, design, and education in semiconductor electronics.

Best Publications

  • Device electronics for integrated circuits

    R. S Muller;T. I Kamins

  • Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

    Gilberto Medeiros-Ribeiro;Alexander M. Bratkovski;Theodore I. Kamins;Douglas A. A. Ohlberg

  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

    Yu-Hsuan Kuo;Yong Kyu Lee;Yangsi Ge;Shen Ren

  • Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires

    Z. Li;Y. Chen;X. Li;T. I. Kamins

  • Hall Mobility in Chemically Deposited Polycrystalline Silicon

    T. I. Kamins

  • Dopant segregation in polycrystalline silicon

    Mohammad M. Mandurah;Krishna C. Saraswat;C. Robert Helms;Theodore I. Kamins

  • Polycrystalline Silicon for Integrated Circuit Applications

    Ted Kamins

  • Photovoltaic retinal prosthesis with high pixel density

    Keith Mathieson;James Loudin;Georges Goetz;Philip Huie

  • Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

    T. I. Kamins;R. Stanley Williams;D. P. Basile;T. Hesjedal

  • Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

    T. I. Kamins;E. C. Carr;R. S. Williams;S. J. Rosner

  • Lithographic positioning of self-assembled Ge islands on Si(001)

    T. I. Kamins;R. Stanley Williams

  • Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

    Robert Chen;Hai Lin;Yijie Huo;Charles Hitzman

  • Polycrystalline Silicon for Integrated Circuits and Displays

    Ted Kamins

  • Evolution of Ge islands on Si(001) during annealing

    T. I. Kamins;G. Medeiros-Ribeiro;D. A. A. Ohlberg;R. Stanley Williams

  • Growth and Structure of Chemically Vapor Deposited Ge Nanowires on Si Substrates

    T. I. Kamins;X. Li;R. Stanley Williams;X. Liu

  • Hydrogenation of transistors fabricated in polycrystalline-silicon films

    T.I. Kamins;P.J. Marcoux

  • Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces

    M Saif Islam;S Sharma;T I Kamins;R Stanley Williams

  • Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films

    T. I. Kamins;M. M. Mandurah;K. C. Saraswat

  • Optical modulator on silicon employing germanium quantum wells

    Jonathan E. Roth;Onur Fidaner;Rebecca K. Schaevitz;Yu-Hsuan Kuo

  • Ultra-high density storage device

    Gary Gibson;Theodore I. Kamins;Marvin S. Keshner;Steven L. Neberhuis

Frequent Co-Authors

James S. Harris
James S. Harris Stanford University
R. Stanley Williams
R. Stanley Williams Texas A&M University
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
J. F. Gibbons
J. F. Gibbons Stanford University
Philip J. Kuekes
Philip J. Kuekes Hewlett-Packard (United States)
Gilberto Medeiros-Ribeiro
Gilberto Medeiros-Ribeiro Universidade Federal de Minas Gerais
Alexander Sher
Alexander Sher University of California, Santa Cruz
Zhiyong Li
Zhiyong Li Chinese Academy of Sciences
David J. Lockwood
David J. Lockwood National Research Council Canada
Wei Wu
Wei Wu Wuhan University

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