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Theodore I. Kamins

Theodore I. Kamins

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
77
Citations
26371
World Ranking
604
National Ranking
270

Materials Science

D-Index
80
Citations
27557
World Ranking
2664
National Ranking
759

Research.com Recognitions

  • 1991 - IEEE Fellow For contributions to materials, process, design, and education in semiconductor electronics.

Overview

Theodore I. Kamins is affiliated with Stanford University in the United States. Their research primarily spans the fields of neuroscience and engineering, with significant contributions to cellular and molecular neuroscience as well as electrical and electronic engineering.

Their work covers several specialized subfields including:

  • Cellular and Molecular Neuroscience
  • Electrical and Electronic Engineering
  • Molecular Biology
  • Cognitive Neuroscience
  • Biomedical Engineering

The main topics explored by Kamins throughout their career focus on intersections between neuroscience and engineering, including:

  • Neuroscience and Neural Engineering
  • Photoreceptor and Optogenetics Research
  • Advanced Memory and Neural Computing
  • Retinal Development and Disorders
  • EEG and Brain-Computer Interfaces
  • Nanowire Synthesis and Applications
  • Silicon and Solar Cell Technologies

Recent publications by Theodore I. Kamins include:

  • "Electronic photoreceptors enable prosthetic visual acuity matching the natural resolution in rats" (2022), published in Nature Communications
  • "Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0%" (2020), published in Nano Energy
  • "Vertical-junction photodiodes for smaller pixels in retinal prostheses" (2021), published in Journal of Neural Engineering
  • "Cellular migration into a subretinal honeycomb-shaped prosthesis for high-resolution prosthetic vision" (2023), published in Proceedings of the National Academy of Sciences
  • "3D electronic implants in subretinal space: Long-term follow-up in rodents" (2024), published in Biomaterials

Kamins frequently publishes in venues such as:

  • bioRxiv (Cold Spring Harbor Laboratory)
  • Journal of Neural Engineering
  • Nature Communications
  • Nano Energy
  • Proceedings of the National Academy of Sciences

Collaborations have been an important part of their research activities. Frequent co-authors include:

  • Ludwig Galambos
  • Keith Mathieson
  • Daniel Palanker
  • Andrew Shin
  • Mohajeet Bhuckory

Theodore I. Kamins was recognized as an IEEE Fellow in 1991 for contributions to materials, process, design, and education in semiconductor electronics.

Best Publications

  • Device electronics for integrated circuits

    R. S Muller;T. I Kamins

  • Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

    Gilberto Medeiros-Ribeiro;Alexander M. Bratkovski;Theodore I. Kamins;Douglas A. A. Ohlberg

  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

    Yu-Hsuan Kuo;Yong Kyu Lee;Yangsi Ge;Shen Ren

  • Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires

    Z. Li;Y. Chen;X. Li;T. I. Kamins

  • Hall Mobility in Chemically Deposited Polycrystalline Silicon

    T. I. Kamins

  • Dopant segregation in polycrystalline silicon

    Mohammad M. Mandurah;Krishna C. Saraswat;C. Robert Helms;Theodore I. Kamins

  • Polycrystalline Silicon for Integrated Circuit Applications

    Ted Kamins

  • Photovoltaic retinal prosthesis with high pixel density

    Keith Mathieson;James Loudin;Georges Goetz;Philip Huie

  • Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

    T. I. Kamins;R. Stanley Williams;D. P. Basile;T. Hesjedal

  • Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

    T. I. Kamins;E. C. Carr;R. S. Williams;S. J. Rosner

  • Lithographic positioning of self-assembled Ge islands on Si(001)

    T. I. Kamins;R. Stanley Williams

  • Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

    Robert Chen;Hai Lin;Yijie Huo;Charles Hitzman

  • Polycrystalline Silicon for Integrated Circuits and Displays

    Ted Kamins

  • Evolution of Ge islands on Si(001) during annealing

    T. I. Kamins;G. Medeiros-Ribeiro;D. A. A. Ohlberg;R. Stanley Williams

  • Growth and Structure of Chemically Vapor Deposited Ge Nanowires on Si Substrates

    T. I. Kamins;X. Li;R. Stanley Williams;X. Liu

  • Hydrogenation of transistors fabricated in polycrystalline-silicon films

    T.I. Kamins;P.J. Marcoux

  • Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces

    M Saif Islam;S Sharma;T I Kamins;R Stanley Williams

  • Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films

    T. I. Kamins;M. M. Mandurah;K. C. Saraswat

  • Optical modulator on silicon employing germanium quantum wells

    Jonathan E. Roth;Onur Fidaner;Rebecca K. Schaevitz;Yu-Hsuan Kuo

  • Ultra-high density storage device

    Gary Gibson;Theodore I. Kamins;Marvin S. Keshner;Steven L. Neberhuis

Frequent Co-Authors

James S. Harris
James S. Harris Stanford University
R. Stanley Williams
R. Stanley Williams Texas A&M University
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
J. F. Gibbons
J. F. Gibbons Stanford University
Philip J. Kuekes
Philip J. Kuekes Hewlett-Packard (United States)
Gilberto Medeiros-Ribeiro
Gilberto Medeiros-Ribeiro Universidade Federal de Minas Gerais
Alexander Sher
Alexander Sher University of California, Santa Cruz
Zhiyong Li
Zhiyong Li Chinese Academy of Sciences
David J. Lockwood
David J. Lockwood National Research Council Canada
Wei Wu
Wei Wu Wuhan University

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