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J. F. Gibbons

D-Index & Metrics

Engineering and Technology

D-Index
58
Citations
13782
World Ranking
2465
National Ranking
757

J. F. Gibbons publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where J. F. Gibbons sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 314 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

J. F. Gibbons D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where J. F. Gibbons sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 58 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2011 - IEEE Founders Medal For leadership in engineering research
  • 1996 - Semiconductor Industry Association University Researcher Award
  • 1989 - Fellow of the American Academy of Arts and Sciences
  • 1985 - Member of the National Academy of Sciences
  • 1974 - Member of the National Academy of Engineering Leadership as a teacher, author, and researcher in semiconductor electronics.

Overview

J. F. Gibbons is affiliated with Stanford University in the United States and has a research focus primarily within the field of Medicine. Their work spans multiple subfields including Infectious Diseases, Pollution, Small Animals, Pathology and Forensic Medicine, and Pediatrics, Perinatology and Child Health.

The scientist's research covers a range of topics, such as Infectious Disease Case Reports and Treatments, Pharmaceutical and Antibiotic Environmental Impacts, Animal Behavior and Welfare Studies, Biomedical Research and Pathophysiology, Pediatric Urology and Nephrology Studies, Insect and Pesticide Research, and Microbial infections and disease research.

J. F. Gibbons has contributed to several papers in recent years, including:

  • Quantification, description and international comparison of antimicrobial use on Irish pig farms, 2020, Porcine Health Management
  • Does the Use of Different Indicators to Benchmark Antimicrobial Use Affect Farm Ranking?, 2020, Frontiers in Veterinary Science
  • International Spread of Multidrug-Resistant Rhodococcus equi, 2022, Emerging infectious diseases
  • A Scoping Review of Non-Structural Airway Disease as a Cause of Poor Performance in Racehorses, 2023, Animals
  • International spread of emerging multidrug-resistant Rhodococcus equi, 2022, bioRxiv (Cold Spring Harbor Laboratory)

Frequent co-authors who have collaborated with J. F. Gibbons include:

  • Jorge Val-Calvo
  • Alan Creighton
  • Ursula Fogarty
  • Mariela Scortti
  • José A. Vázquez-Boland

Their published work has appeared in venues such as bioRxiv (Cold Spring Harbor Laboratory), Porcine Health Management, Emerging infectious diseases, Frontiers in Veterinary Science, and Animals.

J. F. Gibbons's career includes recognition through several awards:

  • IEEE Founders Medal (2011) for leadership in engineering research
  • Semiconductor Industry Association University Researcher Award (1996)
  • Fellow of the American Academy of Arts and Sciences (1989)
  • Member of the National Academy of Sciences (1985)
  • Member of the National Academy of Engineering (1974) for leadership as a teacher, author, and researcher in semiconductor electronics

Best Publications

  • Ion implantation in semiconductors—Part II: Damage production and annealing

    J.F. Gibbons

  • Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

    Yiming Li;David Mann;Marco Rolandi;Woong Kim

  • Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

    Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons

  • Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

    J. Welser;J.L. Hoyt;J.F. Gibbons

  • Switching properties of thin Nio films

    Unknown

  • Strain dependence of the performance enhancement in strained-Si n-MOSFETs

    J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons

  • Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam

    Y. I. Nissim;A. Lietoila;R. B. Gold;J. F. Gibbons

  • Limited reaction processing: Silicon epitaxy

    J. F. Gibbons;C. M. Gronet;K. E. Williams

  • Ion implantation in semiconductors—Part I: Range distribution theory and experiments

    J.F. Gibbons

  • cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

    A. Gat;L. Gerzberg;J. F. Gibbons;T. J. Magee

  • Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

    C.A. King;J.L. Hoyt;C.M. Gronet;J.F. Gibbons

  • Stoichiometric disturbances in ion implanted compound semiconductors

    Unknown

  • Physical and electrical properties of laser‐annealed ion‐implanted silicon

    A. Gat;J. F. Gibbons;T. J. Magee;J. Peng

  • Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

    C.A. King;J.L. Hoyt;J.F. Gibbons

  • The solid solubility and thermal behavior of metastable concentrations of As in Si

    A. Lietoila;J. F. Gibbons;T. W. Sigmon

  • Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

    Unknown

  • One-gate-wide CMOS Inverter on laser-recrystallized polysilicon

    J.F. Gibbons;K.F. Lee

  • Thin film MOSFET's fabricated in laser-annealed polycrystalline silicon

    K. F. Lee;J. F. Gibbons;K. C. Saraswat;T. I. Kamins

  • A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors

    A. Gat;J. F. Gibbons

  • Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas

    D. B. Noble;J. L. Hoyt;C. A. King;J. F. Gibbons

  • Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layers

    P. Kuo;J. L. Hoyt;J. F. Gibbons;J. E. Turner

  • Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

    N. M. Johnson;D. J. Bartelink;R. B. Gold;J. F. Gibbons

  • Solid solubility of As in Si as determined by ion implantation and cw laser annealing

    A. Lietoila;J. F. Gibbons;T. J. Magee;J. Peng

  • Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

    T.I. Kamins;K. Nauka;J.B. Kruger;J.L. Hoyt

  • Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition

    T. O. Mitchell;J. L. Hoyt;J. F. Gibbons

  • Scanning‐electron‐beam annealing of arsenic‐implanted silicon

    J. L. Regolini;J. F. Gibbons;T. W. Sigmon;R. F. W. Pease

  • A monolithic integrated circuit fabricated in laser-annealed polysilicon

    T.I. Kamins;K.F. Lee;J.F. Gibbons;K.C. Saraswat

Frequent Co-Authors

Theodore I. Kamins
Theodore I. Kamins Stanford University
James C. Sturm
James C. Sturm Princeton University
Roger Fabian W. Pease
Roger Fabian W. Pease Stanford University
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Shinichi Takagi
Shinichi Takagi University of Tokyo
Judy L. Hoyt
Judy L. Hoyt MIT
Martin M. Fejer
Martin M. Fejer Stanford University
Robert Hull
Robert Hull Rensselaer Polytechnic Institute
William D. Nix
William D. Nix Stanford University
James D. Plummer
James D. Plummer Stanford University

External Links

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