J. F. Gibbons

Research.com Recognitions

• 2011 - IEEE Founders Medal For leadership in engineering research
• 1996 - Semiconductor Industry Association University Researcher Award
• 1989 - Fellow of the American Academy of Arts and Sciences
• 1985 - Member of the National Academy of Sciences
• 1974 - Member of the National Academy of Engineering Leadership as a teacher, author, and researcher in semiconductor electronics.

Overview

Best Publications

• Ion implantation in semiconductors—Part II: Damage production and annealing

  J.F. Gibbons

  1003
  Citations

• Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

  Yiming Li;David Mann;Marco Rolandi;Woong Kim

  737
  Citations

• Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

  Shin‐ichi Takagi;Judy L. Hoyt;Jeffrey J. Welser;James F. Gibbons

  626
  Citations

• Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

  J. Welser;J.L. Hoyt;J.F. Gibbons

  598
  Citations

• Switching properties of thin Nio films

  Unknown

  496
  Citations

• Strain dependence of the performance enhancement in strained-Si n-MOSFETs

  J. Welser;J.L. Hoyt;S. Takagi;J.F. Gibbons

  395
  Citations

• Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam

  Y. I. Nissim;A. Lietoila;R. B. Gold;J. F. Gibbons

  376
  Citations

• Limited reaction processing: Silicon epitaxy

  J. F. Gibbons;C. M. Gronet;K. E. Williams

  329
  Citations

• Ion implantation in semiconductors—Part I: Range distribution theory and experiments

  J.F. Gibbons

  327
  Citations

• cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

  A. Gat;L. Gerzberg;J. F. Gibbons;T. J. Magee

  308
  Citations

• Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

  C.A. King;J.L. Hoyt;C.M. Gronet;J.F. Gibbons

  250
  Citations

• Stoichiometric disturbances in ion implanted compound semiconductors

  Unknown

  235
  Citations

• Physical and electrical properties of laser‐annealed ion‐implanted silicon

  A. Gat;J. F. Gibbons;T. J. Magee;J. Peng

  231
  Citations

• Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

  C.A. King;J.L. Hoyt;J.F. Gibbons

  230
  Citations

• The solid solubility and thermal behavior of metastable concentrations of As in Si

  A. Lietoila;J. F. Gibbons;T. W. Sigmon

  185
  Citations

• Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

  Unknown

  176
  Citations

• One-gate-wide CMOS Inverter on laser-recrystallized polysilicon

  J.F. Gibbons;K.F. Lee

  171
  Citations

• Thin film MOSFET's fabricated in laser-annealed polycrystalline silicon

  K. F. Lee;J. F. Gibbons;K. C. Saraswat;T. I. Kamins

  163
  Citations

• A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors

  A. Gat;J. F. Gibbons

  160
  Citations

• Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas

  D. B. Noble;J. L. Hoyt;C. A. King;J. F. Gibbons

  151
  Citations

• Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layers

  P. Kuo;J. L. Hoyt;J. F. Gibbons;J. E. Turner

  137
  Citations

• Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

  N. M. Johnson;D. J. Bartelink;R. B. Gold;J. F. Gibbons

  134
  Citations

• Solid solubility of As in Si as determined by ion implantation and cw laser annealing

  A. Lietoila;J. F. Gibbons;T. J. Magee;J. Peng

  125
  Citations

• Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

  T.I. Kamins;K. Nauka;J.B. Kruger;J.L. Hoyt

  101
  Citations

• Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition

  T. O. Mitchell;J. L. Hoyt;J. F. Gibbons

  96
  Citations

• Scanning‐electron‐beam annealing of arsenic‐implanted silicon

  J. L. Regolini;J. F. Gibbons;T. W. Sigmon;R. F. W. Pease

  87
  Citations

• A monolithic integrated circuit fabricated in laser-annealed polysilicon

  T.I. Kamins;K.F. Lee;J.F. Gibbons;K.C. Saraswat

  86
  Citations