World's Best Scientists 2026 revealed!
Award Badge
Materials Science
Australia
2022

D-Index & Metrics

Materials Science

D-Index
80
Citations
19190
World Ranking
2737
National Ranking
95

James Williams publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where James Williams sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 554 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

James Williams D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where James Williams sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 80 D-Index — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Australia Leader Award

Overview

James Williams is a researcher affiliated with the Australian National University in Australia. Their academic contributions span across the fields of Engineering and Materials Science, with a focus on Electrical and Electronic Engineering, Biomedical Engineering, and Materials Chemistry. Additional subfields of their research include Atomic and Molecular Physics and Optics, as well as Computational Mechanics.

Their work encompasses several main research topics, notably Silicon Nanostructures and Photoluminescence, Thin-Film Transistor Technologies, and Nanowire Synthesis and Applications. Other significant areas include Photonic and Optical Devices, Laser Material Processing Techniques, Advanced Surface Polishing Techniques, and Semiconductor Materials and Interfaces.

Williams has published in a range of scientific journals, with frequent appearances in the Journal of Applied Physics, APL Materials, Semiconductor Science and Technology, Physical Review Materials, and Physical Review Applied. Collaborations are an important aspect of their research activities, with regular co-authors including Shao Qi Lim, Jeffrey M. Warrender, Lachlan Smillie, Philippe K. Chow, and Tuan T. Tran.

Some recent publications demonstrate the diversity of Williams' research interests. These include:

  • Validation of seven global remotely sensed ET products across Thailand using water balance measurements and land use classifications (2020), Journal of Hydrology Regional Studies
  • Framework for Integrating Equity Into Machine Learning Models (2022), CHEST Journal
  • Development of an electronic patient-reported outcome measure (ePROM) system to aid the management of patients with advanced chronic kidney disease (2020), Journal of Patient-Reported Outcomes
  • Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors (2020), APL Materials
  • Electrical and Optical Doping of Silicon by Pulsed-Laser Melting (2021), Micro

Williams' research reflects a multidisciplinary approach, bridging advances in materials chemistry and engineering with biomedical applications. This is evident in their exploration of device technologies, such as thin-film transistors and photonic devices, as well as their involvement in the development of patient-reported outcome measurement systems in healthcare contexts.

Their publication record shows consistent engagement with journals known for research in applied physics, materials science, and semiconductor technology, highlighting a concerted effort to contribute to these scientific communities.

Best Publications

  • Poverty and Social Exclusion in Britain

    David Gordon;L Adelman;K Ashworth;J Bradshaw

  • Ion Implantation and Beam Processing

    J.S. Williams;J.M. Poate

  • Ion implantation into GaN

    Sergei Kucheyev;James Williams;S J Pearton

  • Synthesis of boron nitride nanotubes at low temperatures using reactive ball milling

    Ying Chen;J. Fitz Gerald;J. S. Williams;S. Bulcock

  • Mechanical deformation of single-crystal ZnO

    S. O. Kucheyev;J. E. Bradby;J. S. Williams;C. Jagadish

  • Ion-beam-produced structural defects in ZnO

    Sergei O Kucheyev;James Williams;Chennupati Jagadish;Jin Zou

  • Ion beams for materials analysis

    J.R. Bird;J.S. Williams

  • Ion implantation of semiconductors

    J.S. Williams

  • A solid-state process for formation of boron nitride nanotubes

    Ying Chen;Lewis T. Chadderton;John Fitz Gerald;James S. Williams

  • Mechanical deformation in silicon by micro-indentation

    Jodie Bradby;James Williams;Jennifer Wong-Leung;Michael Vincent Swain

  • Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon.

    JS Williams;RG Elliman;WL Brown;TE Seidel

  • Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon

    J. E. Bradby;J. S. Williams;J. Wong-Leung;M. V. Swain

  • Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

    Jonathan P. Mailoa;Austin J. Akey;Christie B. Simmons;David Hutchinson

  • Damage Buildup in GaN under Ion Bombardment

    Sergei Kucheyev;James Williams;Chennupati Jagadish;Jin Zou

  • Cardioversion and Digitalis Drugs: Changed Threshold to Electric Shock in Digitalized Animals

    Bernard Lown;Robert Kleiger;James Williams

  • Materials modification with ion beams

    J S Williams

  • Role of electronic processes in epitaxial recrystallization of amorphous semiconductors

    J. S. Williams;R. G. Elliman

  • In situ electrical characterization of phase transformations in Si during indentation

    Jodie Bradby;James Williams;Michael Vincent Swain

  • Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion

    Ludovic Rapp;Ludovic Rapp;Bianca Haberl;Bianca Haberl;C J Pickard;Jodie Bradby

  • Formation of metal hydrides by mechanical alloying

    Ying Chen;J. S. Williams

  • Ion-beam-induced crystallization and amorphization of silicon

    R.G. Elliman;J.S. Williams;W.L. Brown;A. Leiberich

  • Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

    David Hutchinson;Jay Mathews;Joseph T. Sullivan;Daniel Recht

Frequent Co-Authors

Chennupati Jagadish
Chennupati Jagadish Australian National University
Robert Elliman
Robert Elliman Australian National University
Sergei O. Kucheyev
Sergei O. Kucheyev Lawrence Livermore National Laboratory
Ying Chen
Ying Chen Deakin University
Jin Zou
Jin Zou University of Queensland
Michael J. Aziz
Michael J. Aziz Harvard University
Michael V. Swain
Michael V. Swain University of Sydney
Paul Munroe
Paul Munroe University of New South Wales
Hark Hoe Tan
Hark Hoe Tan Australian National University
Stephen J. Pearton
Stephen J. Pearton University of Florida

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing James Williams

Trending Scientists

Recently Published Articles