What is he best known for?
The fields of study he is best known for:
- Electron
- Semiconductor
- Silicon
Bengt Gunnar Svensson mainly focuses on Analytical chemistry, Silicon, Vacancy defect, Doping and Ion implantation.
His Analytical chemistry research incorporates elements of Annealing, Epitaxy and Diffusion.
The study incorporates disciplines such as Crystallography and Binding energy in addition to Annealing.
His Silicon study is concerned with the larger field of Optoelectronics.
Bengt Gunnar Svensson interconnects Deep-level transient spectroscopy, Activation energy, Charge carrier, Atomic physics and Infrared spectroscopy in the investigation of issues within Vacancy defect.
His Ion implantation research is multidisciplinary, incorporating elements of Crystallographic defect and Silicon carbide.
His most cited work include:
- Electronic structure and optical properties of ZnX ( X=O, S, Se, Te): A density functional study (166 citations)
- Negative-U System of Carbon Vacancy in 4H-SiC (155 citations)
- Structural and morphological properties of ZnO:Ga thin films (99 citations)
What are the main themes of his work throughout his whole career to date?
Bengt Gunnar Svensson spends much of his time researching Analytical chemistry, Annealing, Silicon, Deep-level transient spectroscopy and Ion implantation.
His work in Analytical chemistry tackles topics such as Doping which are related to areas like Nanotechnology.
His Annealing study integrates concerns from other disciplines, such as Chemical vapor deposition, Crystallography, Zinc, Dissociation and Wide-bandgap semiconductor.
His studies in Silicon integrate themes in fields like Vacancy defect, Crystallographic defect, Atmospheric temperature range and Irradiation.
His Deep-level transient spectroscopy study also includes fields such as
- Atomic physics which intersects with area such as Acceptor and Semiconductor,
- Band gap and related Electronic structure.
His Ion implantation research is multidisciplinary, incorporating perspectives in Inorganic chemistry and Silicon carbide.
He most often published in these fields:
- Analytical chemistry (49.57%)
- Annealing (37.32%)
- Silicon (30.77%)
What were the highlights of his more recent work (between 2015-2020)?
- Analytical chemistry (49.57%)
- Annealing (37.32%)
- Optoelectronics (17.38%)
In recent papers he was focusing on the following fields of study:
Analytical chemistry, Annealing, Optoelectronics, Vacancy defect and Silicon are his primary areas of study.
His study in Analytical chemistry focuses on Secondary ion mass spectrometry in particular.
His Annealing research incorporates themes from Ion implantation, Wafer, Doping and Dissociation.
His work carried out in the field of Optoelectronics brings together such families of science as Thin film and Sputter deposition.
His biological study spans a wide range of topics, including Chemical physics, Acceptor and Epitaxy.
His Silicon research includes themes of Fourier transform infrared spectroscopy, Photochemistry, Absorptance and Absorption spectroscopy.
Between 2015 and 2020, his most popular works were:
- Cubic silicon carbide as a potential photovoltaic material (24 citations)
- Photocatalytic and antibacterial properties of titanium dioxide flat film (20 citations)
- Improving carrier transport in Cu2O thin films by rapid thermal annealing (17 citations)
In his most recent research, the most cited papers focused on:
- Electron
- Semiconductor
- Silicon
His primary areas of investigation include Optoelectronics, Annealing, Doping, Crystallography and Semiconductor.
His study in Optoelectronics is interdisciplinary in nature, drawing from both Thin film and Sputter deposition.
His research integrates issues of Secondary ion mass spectrometry and Analytical chemistry in his study of Sputter deposition.
Deep-level transient spectroscopy is the focus of his Annealing research.
His Doping study typically links adjacent topics like Ion implantation.
Bengt Gunnar Svensson has researched Semiconductor in several fields, including Crystallographic defect, Irradiation and Defect engineering.
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