Bengt Gunnar Svensson

Research.com Recognitions

• 2014 - Fellow of American Physical Society (APS) Citation For pioneering and sustained contributions to ionsolid interactions and defects, doping and diffusion in Si, SiGe, SiC and oxide semiconductors

Overview

Best Publications

• Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

  G Lindström;M Ahmed;S Albergo;P Allport

  559
  Citations

• Identification of oxygen and zinc vacancy optical signals in ZnO

  T. Moe Børseth;B. G. Svensson;A. Yu. Kuznetsov;Peter Klason

  507
  Citations

• Negative-U System of Carbon Vacancy in 4H-SiC

  NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  330
  Citations

• Iron and intrinsic deep level states in Ga2O3

  M. E. Ingebrigtsen;J. B. Varley;A. Yu. Kuznetsov;B. G. Svensson

  288
  Citations

• Electronic structure and optical properties of ZnX ( X=O, S, Se, Te): A density functional study

  S. Zh. Karazhanov;P. Ravindran;A. Kjekshus;H. Fjellvåg

  267
  Citations

• Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO

  David C. Look;K. D. Leedy;L. Vines;B. G. Svensson

  232
  Citations

• Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

  M. E. Ingebrigtsen;A. Yu. Kuznetsov;B. G. Svensson;G. Alfieri

  228
  Citations

• Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

  R. Vidya;P. Ravindran;H. Fjellvåg;B. G. Svensson

  209
  Citations

• Vacancy defect and defect cluster energetics in ion-implanted ZnO

  Yufeng Dong;Filip Tuomisto;B.G. Svensson;A.Yu. Kuznetsov

  155
  Citations

• Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

  Peter Klason;Thomas Moe Børseth;Qing X. Zhao;Bengt G. Svensson

  153
  Citations

• Structural and morphological properties of ZnO:Ga thin films

  V. Khranovskyy;U. Grossner;O. Nilsen;V. Lazorenko

  147
  Citations

• Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration

  G. Lindström;M. Ahmed;S. Albergo;P. Allport

  145
  Citations

• Heavy doping effects in the diffusion of group IV and V impurities in silicon

  A. Nylandsted Larsen;K. Kyllesbech Larsen;P. E. Andersen;B. G. Svensson

  145
  Citations

• Overlapping electron traps in n‐type silicon studied by capacitance transient spectroscopy

  Unknown

  143
  Citations

• Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional

  Tamas Hornos;Adam Gali;Bengt Gunnar Svensson

  138
  Citations

• Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing

  A. Bentzen;A. Holt;R. Kopecek;G. Stokkan

  130
  Citations

• Generation of divacancies in silicon irradiated by 2‐MeV electrons: Depth and dose dependence

  Bengt G. Svensson;Magnus Willander

  129
  Citations

• GENERATION OF VACANCY-TYPE POINT DEFECTS IN SINGLE COLLISION CASCADES DURING SWIFT-ION BOMBARDMENT OF SILICON

  B. G. Svensson;C. Jagadish;A. Hallén;J. Lalita

  124
  Citations

• Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

  P Pellegrino;P Leveque;J Lalita;A Hallen

  124
  Citations

• Photocatalytic and antibacterial properties of titanium dioxide flat film

  V. Scuderi;M.A. Buccheri;G. Impellizzeri;A. Di Mauro

  118
  Citations

• Palladium Schottky barrier contacts to hydrothermally grown n-ZnO and shallow electron states

  Ulrike Grossner;Stig Gabrielsen;Thomas Moe Børseth;Joachim Grillenberger

  110
  Citations