World's Best Scientists 2026 revealed!
Bengt Gunnar Svensson

Bengt Gunnar Svensson

D-Index & Metrics

Materials Science

D-Index
64
Citations
14565
World Ranking
5898
National Ranking
3

Bengt Gunnar Svensson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bengt Gunnar Svensson sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 576 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Bengt Gunnar Svensson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bengt Gunnar Svensson sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2014 - Fellow of American Physical Society (APS) Citation For pioneering and sustained contributions to ionsolid interactions and defects, doping and diffusion in Si, SiGe, SiC and oxide semiconductors

Overview

Bengt Gunnar Svensson was affiliated with the University of Oslo in Norway. Their research spanned multiple topics within biochemistry, genetics, molecular biology, and medicine. The scientist contributed extensively to understanding ion channel regulation and function, cardiac electrophysiology and arrhythmias, receptor mechanisms and signaling, genetic neurodegenerative diseases, and neuroscience-related fields.

The main fields of study covered in Svensson's work included:

  • Biochemistry, Genetics and Molecular Biology
  • Medicine

Within these, the subfields they predominantly focused on were:

  • Molecular Biology
  • Cardiology and Cardiovascular Medicine
  • Cellular and Molecular Neuroscience
  • Physiology
  • Materials Chemistry

The thematic focus of their research included these main topics:

  • Ion channel regulation and function
  • Cardiac electrophysiology and arrhythmias
  • Receptor Mechanisms and Signaling
  • Genetic Neurodegenerative Diseases
  • Neuroscience and Neuropharmacology Research
  • Neuroscience and Neural Engineering
  • Calcium signaling and nucleotide metabolism

Svensson published in various scientific venues, with notable frequency in:

  • Biophysical Journal
  • bioRxiv (Cold Spring Harbor Laboratory)
  • Journal of Biological Chemistry
  • Cells
  • ACS Chemical Biology

Several recent papers showcased aspects of their research, including:

  • Live-Cell Cardiac-Specific High-Throughput Screening Platform for Drug-Like Molecules That Enhance Ca2+ Transport, 2020, Cells
  • Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications, 2020, Journal of Alloys and Compounds
  • Novel drug discovery platform for spinocerebellar ataxia, using fluorescence technology targeting β-III-spectrin, 2020, Journal of Biological Chemistry
  • Early-phase drug discovery of β-III-spectrin actin-binding modulators for treatment of spinocerebellar ataxia type 5, 2023, Journal of Biological Chemistry
  • RyR2 Binding of an Antiarrhythmic Cyclic Depsipeptide Mapped Using Confocal Fluorescence Lifetime Detection of FRET, 2023, ACS Chemical Biology

The scientist often collaborated with a number of frequent co-authors, including:

  • David D. Thomas
  • Rǎzvan L. Cornea
  • Robyn T. Rebbeck
  • Donald M. Bers
  • Jingyan Zhang

Bengt Gunnar Svensson received recognition as a Fellow of the American Physical Society in 2014 for pioneering and sustained contributions to ion-solid interactions and defects, doping, and diffusion in silicon-based and oxide semiconductors.

Best Publications

  • Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

    G Lindström;M Ahmed;S Albergo;P Allport

  • Identification of oxygen and zinc vacancy optical signals in ZnO

    T. Moe Børseth;B. G. Svensson;A. Yu. Kuznetsov;Peter Klason

  • Negative-U System of Carbon Vacancy in 4H-SiC

    NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  • Iron and intrinsic deep level states in Ga2O3

    M. E. Ingebrigtsen;J. B. Varley;A. Yu. Kuznetsov;B. G. Svensson

  • Electronic structure and optical properties of ZnX ( X=O, S, Se, Te): A density functional study

    S. Zh. Karazhanov;P. Ravindran;A. Kjekshus;H. Fjellvåg

  • Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO

    David C. Look;K. D. Leedy;L. Vines;B. G. Svensson

  • Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

    M. E. Ingebrigtsen;A. Yu. Kuznetsov;B. G. Svensson;G. Alfieri

  • Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

    R. Vidya;P. Ravindran;H. Fjellvåg;B. G. Svensson

  • Vacancy defect and defect cluster energetics in ion-implanted ZnO

    Yufeng Dong;Filip Tuomisto;B.G. Svensson;A.Yu. Kuznetsov

  • Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

    Peter Klason;Thomas Moe Børseth;Qing X. Zhao;Bengt G. Svensson

  • Structural and morphological properties of ZnO:Ga thin films

    V. Khranovskyy;U. Grossner;O. Nilsen;V. Lazorenko

  • Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration

    G. Lindström;M. Ahmed;S. Albergo;P. Allport

  • Heavy doping effects in the diffusion of group IV and V impurities in silicon

    A. Nylandsted Larsen;K. Kyllesbech Larsen;P. E. Andersen;B. G. Svensson

  • Overlapping electron traps in n‐type silicon studied by capacitance transient spectroscopy

    Unknown

  • Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional

    Tamas Hornos;Adam Gali;Bengt Gunnar Svensson

  • Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing

    A. Bentzen;A. Holt;R. Kopecek;G. Stokkan

  • Generation of divacancies in silicon irradiated by 2‐MeV electrons: Depth and dose dependence

    Bengt G. Svensson;Magnus Willander

  • GENERATION OF VACANCY-TYPE POINT DEFECTS IN SINGLE COLLISION CASCADES DURING SWIFT-ION BOMBARDMENT OF SILICON

    B. G. Svensson;C. Jagadish;A. Hallén;J. Lalita

  • Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

    P Pellegrino;P Leveque;J Lalita;A Hallen

  • Photocatalytic and antibacterial properties of titanium dioxide flat film

    V. Scuderi;M.A. Buccheri;G. Impellizzeri;A. Di Mauro

  • Palladium Schottky barrier contacts to hydrothermally grown n-ZnO and shallow electron states

    Ulrike Grossner;Stig Gabrielsen;Thomas Moe Børseth;Joachim Grillenberger

Frequent Co-Authors

Anders Hallén
Anders Hallén Royal Institute of Technology
Helmer Fjellvåg
Helmer Fjellvåg University of Oslo
Chennupati Jagadish
Chennupati Jagadish Australian National University
Rositsa Yakimova
Rositsa Yakimova Linköping University
Erik Janzén
Erik Janzén Linköping University
Xiaolong Du
Xiaolong Du Chinese Academy of Sciences
Ponniah Ravindran
Ponniah Ravindran Central University of Tamil Nadu
Weimin Chen
Weimin Chen Linköping University
David C. Look
David C. Look Wright State University
Magnus Willander
Magnus Willander Linköping University

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