2026 Rositsa Yakimova: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	57	7965	7701	82	76	406	11585

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

7965

7701

406

11585

Overview

Rositsa Yakimova is affiliated with Linköping University in Sweden and conducts research primarily in the fields of materials science and engineering. Their scholarly work significantly focuses on materials chemistry, electrical and electronic engineering, and atomic and molecular physics, as well as optics.

The research topics covered by Yakimova include:

Graphene research and applications
Semiconductor materials and devices
Advancements in battery materials
Diamond and carbon-based materials research
Ga2O3 and related materials
ZnO doping and properties
Semiconductor materials and interfaces

They have contributed to a number of recent papers, such as:

"Bottom-Up Growth of Monolayer Honeycomb SiC" (2023), published in Physical Review Letters
"Indium Nitride at the 2D Limit" (2020), published in Advanced Materials
"Properties and potential applications of two-dimensional AlN" (2020), published in Vacuum
"New Approaches and Understandings in the Growth of Cubic Silicon Carbide" (2021), published in Materials
"One-dimensional confinement and width-dependent bandgap formation in epitaxial graphene nanoribbons" (2020), published in Nature Communications

The frequent co-authors working alongside Yakimova include:

Ivan Shtepliuk
Ivan G. Ivanov
Alexei Zakharov
Sergey Kubatkin
Samuel Lara-Avila

Yakimova's work is regularly published in several venues, with multiple papers appearing in:

Applied Sciences (6 publications)
Applied Physics Letters (3 publications)
arXiv (Cornell University) (3 publications)
Materials (2 publications)
ACS Nano (2 publications)

The scope of Yakimova's research and publication record reflects engagement with experimental and theoretical advances in semiconductor and carbon-based materials, as well as their applications in electronics, optics, and energy storage technologies.

Best Publications

Homogeneous large-area graphene layer growth on 6H-SiC(0001)

Chariya Virojanadara;Mikael Syväjärvi;Rositsa Yakimova;Leif Johansson

807
Citations
Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection

R. Pearce;T. Iakimov;M. Andersson;L. Hultman

401
Citations
Epitaxial Graphene on SiC: A Review of Growth and Characterization

Gholam Reza Yazdi;Tihomir Iakimov;Rositsa Yakimova

288
Citations
Surface functionalization and biomedical applications based on SiC

R Yakimova;R M Petoral;G R Yazdi;C Vahlberg

229
Citations
Dynamic Hall Effect Driven by Circularly Polarized Light in a Graphene Layer

J. Karch;P. Olbrich;M. Schmalzbauer;C. Zoth

224
Citations
Application of 2D Non-Graphene Materials and 2D Oxide Nanostructures for Biosensing Technology.

Kateryna Shavanova;Yulia Bakakina;Inna Burkova;Ivan Shtepliuk

184
Citations
Si intercalation/deintercalation of graphene on 6H-SiC(0001)

Chao Xia;Somsakul Watcharinyanon;A A Zakharov;Rositsa Yakimova

156
Citations
Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Tjbm Janssen;A. Tzalenchuk;R. Yakimova;Sergey Kubatkin

152
Citations
Magnetic quantum ratchet effect in graphene

S. D. Ganichev;S. A. Tarasenko;P. Olbrich;J. Karch

151
Citations
Structural and morphological properties of ZnO:Ga thin films

V. Khranovskyy;U. Grossner;O. Nilsen;V. Lazorenko

147
Citations
On the interaction of toxic Heavy Metals (Cd, Hg, Pb) with graphene quantum dots and infinite graphene

Ivan Shtepliuk;Nuala M. Caffrey;Nuala M. Caffrey;Tihomir Iakimov;Volodymyr Khranovskyy

141
Citations
Hydrogen intercalation of graphene grown on 6H-SiC(0001)

Somsakul Watcharinyanon;Chariya Virojanadara;Jacek Osiecki;A A Zakharov

140
Citations
Surface morphology effects on the light- controlled wettability of ZnO nanostructures

Volodymyr Khranovskyy;Tobias Ekblad;Rositsa Yakimova;Lars Hultman

137
Citations
Terahertz radiation driven chiral edge currents in graphene.

Johannes Karch;Christoph Drexler;Peter Olbrich;M. Fehrenbacher

134
Citations
Growth of 6H and 4H-SiC by sublimation epitaxy

Mikael Syväjärvi;Rositsa Yakimova;M Tuominen;Anelia Kakanakova-Georgieva;Anelia Kakanakova-Georgieva

132
Citations
Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO(2) laser

Chongyun Jiang;V.A. Shalygin;V. Yu. Panevin;Sergey N. Danilov

127
Citations
Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

S. Sonde;F. Giannazzo;V. Raineri;R. Yakimova

120
Citations
Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

T. Maassen;J. J. van den Berg;N. IJbema;F. Fromm

115
Citations
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

F Giannazzo;I Deretzis;A La Magna;F Roccaforte

112
Citations
Dislocation-evolution in 4H-SiC epitaxial layers

H. Jacobson;J. Birch;R. Yakimova;M. Syväjärvi

111
Citations