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Materials Science

D-Index
42
Citations
8719
World Ranking
12507
National Ranking
786

Overview

Hiroki Hibino is affiliated with Kwansei Gakuin University in Japan and has a research focus primarily on materials science, physics and astronomy, and engineering. Their work encompasses multiple subfields including materials chemistry, atomic and molecular physics and optics, electrical and electronic engineering, biomedical engineering, and surfaces, coatings, and films.

Their research topics include graphene research and applications, 2D materials and applications, diamond and carbon-based materials research, quantum and electron transport phenomena, surface and thin film phenomena, semiconductor materials and interfaces, and advancements in semiconductor devices and circuit design.

Notable recent publications by Hibino consist of:

  • Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene, 2020, ACS Nano
  • Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moiré Materials with Highly Convergent Interlayer Angles, 2021, ACS Nano
  • Observation of a flat band and bandgap in millimeter-scale twisted bilayer graphene, 2021, Communications Materials
  • Controlled CVD growth of lateral and vertical graphene/h-BN heterostructures, 2020, Applied Physics Express
  • Correlation between structures and vibration properties of germanene grown by Ge segregation, 2021, Applied Physics Express

Frequent coauthors in their research include Hiroyuki Kageshima, Shengnan Wang, Yoshitaka Taniyasu, Yoshiaki Sekine, and Katsuya Oguri.

Hibino's work is regularly published in journals such as the Japanese Journal of Applied Physics, Applied Physics Express, e-Journal of Surface Science and Nanotechnology, ACS Nano, and Communications Materials. The highest number of publications are found in the Japanese Journal of Applied Physics and Applied Physics Express.

Best Publications

  • Single-walled carbon nanotube growth from highly activated metal nanoparticles.

    Daisuke Takagi;Yoshikazu Homma;Hiroki Hibino;Satoru Suzuki

  • Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons

    H. Hibino;H. Kageshima;F. Maeda;M. Nagase

  • Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride

    Mitsuhiro Okada;Takumi Sawazaki;Kenji Watanabe;Takashi Taniguch

  • Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy

    H. Hibino;H. Kageshima;Masato Kotsugi;F. Maeda

  • Carbon Nanotube Growth from Semiconductor Nanoparticles

    Daisuke Takagi;Hiroki Hibino;Satoru Suzuki;Yoshihiro Kobayashi

  • Domain Structure and Boundary in Single-Layer Graphene Grown on Cu(111) and Cu(100) Films

    Yui Ogawa;Baoshan Hu;Baoshan Hu;Carlo M. Orofeo;Masaharu Tsuji

  • Quantum Faraday and Kerr rotations in graphene

    R. Shimano;G. Yumoto;J. Y. Yoo;R. Matsunaga

  • Growth and Optical Properties of High-Quality Monolayer WS2 on Graphite

    Yu Kobayashi;Shogo Sasaki;Shohei Mori;Hiroki Hibino

  • Catalytic Growth of Graphene: Toward Large-Area Single-Crystalline Graphene.

    Hiroki Ago;Yui Ogawa;Masaharu Tsuji;Seigi Mizuno

  • Epitaxial few-layer graphene: towards single crystal growth

    H Hibino;H Kageshima;M Nagase

  • DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)

    Yoshikazu Homma;Robert J. Mcclelland;Hiroki Hibino

  • Highly Uniform Bilayer Graphene on Epitaxial Cu–Ni(111) Alloy

    Yuichiro Takesaki;Kenji Kawahara;Hiroki Hibino;Hiroki Hibino;Susumu Okada

  • Scalable synthesis of layer-controlled WS2 and MoS2 sheets by sulfurization of thin metal films

    Carlo M. Orofeo;Satoru Suzuki;Yoshiaki Sekine;Hiroki Hibino

  • Mechanism of gold-catalyzed carbon material growth.

    Daisuke Takagi;Yoshihiro Kobayashi;Hiroki Hibino;Satoru Suzuki

  • Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt

    Carlo M. Orofeo;Satoru Suzuki;Hiroyuki Kageshima;Hiroki Hibino

  • Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

    Satoru Tanaka;Kouhei Morita;Hiroki Hibino

  • Influence of Cu metal on the domain structure and carrier mobility in single-layer graphene

    Carlo M. Orofeo;Hiroki Hibino;Kenji Kawahara;Yui Ogawa

  • Carrier transport mechanism in graphene on SiC(0001)

    Shinichi Tanabe;Yoshiaki Sekine;Hiroyuki Kageshima;Masao Nagase

  • Stacking domains of epitaxial few-layer graphene on SiC(0001)

    H. Hibino;Seigi Mizuno;H. Kageshima;M. Nagase

  • Characterization of doped single-wall carbon nanotubes by Raman spectroscopy

    Satoru Suzuki;Hiroki Hibino

  • SUBLIMATION OF THE SI(111) SURFACE IN ULTRAHIGH VACUUM

    Yoshikazu Homma;Hiroki Hibino;Toshio Ogino;Noriyuki Aizawa

Frequent Co-Authors

Hiroki Ago
Hiroki Ago Kyushu University
Masaharu Tsuji
Masaharu Tsuji Kyushu University
Yasumitsu Miyata
Yasumitsu Miyata Tokyo Metropolitan University
Yoshikazu Homma
Yoshikazu Homma Tokyo University of Science
Koji Yamada
Koji Yamada National Institute of Advanced Industrial Science and Technology
Toshiki Makimoto
Toshiki Makimoto Waseda University
Kazu Suenaga
Kazu Suenaga Osaka University
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Susumu Okada
Susumu Okada University of Tsukuba

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