The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Randall M. Feenstra sits on this spectrum.
This scientist: 354 publications — 70th percentile
70% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Randall M. Feenstra sits on this spectrum.
This scientist: 76 D-Index — 75th percentile
75% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Randall M. Feenstra is affiliated with Carnegie Mellon University in the United States. Their research primarily focuses on materials science and engineering, with particular emphasis on materials chemistry and electrical and electronic engineering. The scientist's work extends into subfields such as atomic and molecular physics, optics, statistical and nonlinear physics, and physical and theoretical chemistry.
Research topics Randall M. Feenstra has contributed to include:
They have published multiple scientific papers, often collaborating with several co-authors. Frequent collaborators include Joshua A. Robinson, Dacen Waters, Stefan Fölsch, Bhakti Jariwala, and Kehao Zhang.
Randall M. Feenstra's recent publications are:
The venues where Randall M. Feenstra most frequently publishes include:
This profile shows a persistent focus on the exploration of two-dimensional materials and their electronic and optical properties, supported by experimental and theoretical methodologies. The work crosses interdisciplinary boundaries, engaging concepts from quantum physics and chemistry applied to novel semiconducting materials. Collaboration with multiple specialists suggests a broad approach to advancing understanding in these complex material systems.
R.M. Feenstra;Joseph A. Stroscio;A.P. Fein
Joseph A. Stroscio;R. M. Feenstra;A. P. Fein
R. M. Feenstra;Joseph A. Stroscio;J. Tersoff;A. P. Fein
R. M. Feenstra;Joseph A. Stroscio
R. M. Feenstra
A. R. Smith;R. M. Feenstra;D. W. Greve;Jörg Neugebauer
John E. Northrup;J. Neugebauer;R. M. Feenstra;A. R. Smith
A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin
Jörg Neugebauer;Tosja K. Zywietz;Matthias Scheffler;John E. Northrup
R. M. Feenstra;W. A. Thompson;A. P. Fein
A. R. Smith;R. M. Feenstra;D. W. Greve;M. S. Shin
P. Mårtensson;R. M. Feenstra
V. Ramachandran;M. F. Brady;A. R. Smith;R. M. Feenstra
V. Ramachandran;R. M. Feenstra;W. L. Sarney;L. Salamanca-Riba
Joseph A. Stroscio;R. M. Feenstra;A. P. Fein
K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour
Randall M Feenstra
Ivan Vlassiouk;Sergei Smirnov;Murari Regmi;Sumedh P. Surwade
R. M. Feenstra;P. Mårtensson
R. M. Feenstra;J. M. Woodall;G. D. Pettit
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