2026 Randall M. Feenstra: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	76	3281	3169	921	865	354	20747

Overview

Randall M. Feenstra is affiliated with Carnegie Mellon University in the United States. Their research primarily focuses on materials science and engineering, with particular emphasis on materials chemistry and electrical and electronic engineering. The scientist's work extends into subfields such as atomic and molecular physics, optics, statistical and nonlinear physics, and physical and theoretical chemistry.

Research topics Randall M. Feenstra has contributed to include:

2D Materials and Applications
Graphene Research and Applications
Chalcogenide Semiconductor Thin Films
Quantum Dots Synthesis and Properties
Semiconductor Quantum Structures and Devices
MXene and MAX Phase Materials
Molecular Junctions and Nanostructures

They have published multiple scientific papers, often collaborating with several co-authors. Frequent collaborators include Joshua A. Robinson, Dacen Waters, Stefan Fölsch, Bhakti Jariwala, and Kehao Zhang.

Randall M. Feenstra's recent publications are:

Flat Bands and Mechanical Deformation Effects in the Moiré Superlattice of MoS₂-WSe₂ Heterobilayers, 2020, ACS Nano
Photophysics and Electronic Structure of Lateral Graphene/MoS₂ and Metal/MoS₂ Junctions, 2020, ACS Nano
Photophysics and Electronic Structure of Lateral Graphene/MoS₂ and Metal/MoS₂ Junctions, 2020, arXiv (Cornell University)
Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions, 2020, arXiv (Cornell University)
Acquisition and analysis of scanning tunneling spectroscopy data-WSe2 monolayer, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

The venues where Randall M. Feenstra most frequently publishes include:

arXiv (Cornell University)
ACS Nano
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Physical Review B

This profile shows a persistent focus on the exploration of two-dimensional materials and their electronic and optical properties, supported by experimental and theoretical methodologies. The work crosses interdisciplinary boundaries, engaging concepts from quantum physics and chemistry applied to novel semiconducting materials. Collaboration with multiple specialists suggests a broad approach to advancing understanding in these complex material systems.

Best Publications

Tunneling spectroscopy of the Si(111)2 × 1 surface

R.M. Feenstra;Joseph A. Stroscio;A.P. Fein

859
Citations
Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy

Joseph A. Stroscio;R. M. Feenstra;A. P. Fein

837
Citations
Atom-selective imaging of the GaAs(110) surface.

R. M. Feenstra;Joseph A. Stroscio;J. Tersoff;A. P. Fein

830
Citations
Tunneling spectroscopy of the GaAs(110) surface

R. M. Feenstra;Joseph A. Stroscio

564
Citations
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors.

R. M. Feenstra

560
Citations
Reconstructions of the GaN\(0001̄\) Surface

A. R. Smith;R. M. Feenstra;D. W. Greve;Jörg Neugebauer

460
Citations
Structure of GaN(0001): The laterally contracted Ga bilayer model

John E. Northrup;J. Neugebauer;R. M. Feenstra;A. R. Smith

436
Citations
Determination of wurtzite GaN lattice polarity based on surface reconstruction

A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin

412
Citations
Adatom kinetics on and below the surface: The existence of a new diffusion channel

Jörg Neugebauer;Tosja K. Zywietz;Matthias Scheffler;John E. Northrup

391
Citations
Real-space observation of π -bonded chains and surface disorder on Si(111)2×1

R. M. Feenstra;W. A. Thompson;A. P. Fein

335
Citations
Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

A. R. Smith;R. M. Feenstra;D. W. Greve;M. S. Shin

314
Citations
Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy

P. Mårtensson;R. M. Feenstra

303
Citations
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

V. Ramachandran;M. F. Brady;A. R. Smith;R. M. Feenstra

294
Citations
Inversion of wurtzite GaN(0001) by exposure to magnesium

V. Ramachandran;R. M. Feenstra;W. L. Sarney;L. Salamanca-Riba

285
Citations
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface.

Joseph A. Stroscio;R. M. Feenstra;A. P. Fein

273
Citations
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour

265
Citations
Scanning tunneling spectroscopy

Randall M Feenstra

262
Citations
Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure

Ivan Vlassiouk;Sergei Smirnov;Murari Regmi;Sumedh P. Surwade

259
Citations
Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy.

R. M. Feenstra;P. Mårtensson

257
Citations
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.

R. M. Feenstra;J. M. Woodall;G. D. Pettit

257
Citations