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Randall M. Feenstra

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 76 3279 3166 919 862 354 20747

Randall M. Feenstra publications per year

The chart shows the history of publications by Randall M. Feenstra between 1979 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Randall M. Feenstra published across 46 years, from 1979 to 2024, averaging 7.9 papers a year. Output peaked at 30 publications in 2015. 4 of the 362 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1979 to 2024. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2015. 1979: 3 publications 1980: 1 publication 1981: 1 publication 1982: 3 publications 1983: 5 publications 1984: 1 publication 1985: 6 publications 1986: 8 publications 1987: 14 publications 1988: 12 publications 1989: 10 publications 1990: 3 publications 1991: 5 publications 1992: 5 publications 1993: 14 publications 1994: 10 publications 1995: 10 publications 1996: 6 publications 1997: 4 publications 1998: 13 publications 1999: 12 publications 2000: 14 publications 2001: 11 publications 2002: 10 publications 2003: 15 publications 2004: 3 publications 2005: 8 publications 2006: 8 publications 2007: 4 publications 2008: 11 publications 2009: 13 publications 2010: 8 publications 2011: 2 publications 2012: 14 publications 2013: 10 publications 2014: 14 publications 2015: 30 publications 2016: 7 publications 2017: 7 publications 2018: 7 publications 2019: 7 publications 2020: 7 publications 2021: 2 publications 2022: 0 publications 2023: 2 publications 2024: 2 publications
1979 2024

362 publications in total across all disciplines

View publications per year as a table
Randall M. Feenstra: publications per year, 1979 to 2024
Year Publications
1979 3
1980 1
1981 1
1982 3
1983 5
1984 1
1985 6
1986 8
1987 14
1988 12
1989 10
1990 3
1991 5
1992 5
1993 14
1994 10
1995 10
1996 6
1997 4
1998 13
1999 12
2000 14
2001 11
2002 10
2003 15
2004 3
2005 8
2006 8
2007 4
2008 11
2009 13
2010 8
2011 2
2012 14
2013 10
2014 14
2015 30
2016 7
2017 7
2018 7
2019 7
2020 7
2021 2
2022 0
2023 2
2024 2
Total 362
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Randall M. Feenstra publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Randall M. Feenstra sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 350–369 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 354 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440 354
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Randall M. Feenstra D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Randall M. Feenstra sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 76–77 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323 76
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Randall M. Feenstra is affiliated with Carnegie Mellon University in the United States. Their research primarily focuses on materials science and engineering, with particular emphasis on materials chemistry and electrical and electronic engineering. The scientist's work extends into subfields such as atomic and molecular physics, optics, statistical and nonlinear physics, and physical and theoretical chemistry.

Research topics Randall M. Feenstra has contributed to include:

  • 2D Materials and Applications
  • Graphene Research and Applications
  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis and Properties
  • Semiconductor Quantum Structures and Devices
  • MXene and MAX Phase Materials
  • Molecular Junctions and Nanostructures

They have published multiple scientific papers, often collaborating with several co-authors. Frequent collaborators include Joshua A. Robinson, Dacen Waters, Stefan Fölsch, Bhakti Jariwala, and Kehao Zhang.

Randall M. Feenstra's recent publications are:

  • Flat Bands and Mechanical Deformation Effects in the Moiré Superlattice of MoS2-WSe2 Heterobilayers, 2020, ACS Nano
  • Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions, 2020, ACS Nano
  • Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions, 2020, arXiv (Cornell University)
  • Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions, 2020, arXiv (Cornell University)
  • Acquisition and analysis of scanning tunneling spectroscopy data-WSe2 monolayer, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

The venues where Randall M. Feenstra most frequently publishes include:

  • arXiv (Cornell University)
  • ACS Nano
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Physical Review B

This profile shows a persistent focus on the exploration of two-dimensional materials and their electronic and optical properties, supported by experimental and theoretical methodologies. The work crosses interdisciplinary boundaries, engaging concepts from quantum physics and chemistry applied to novel semiconducting materials. Collaboration with multiple specialists suggests a broad approach to advancing understanding in these complex material systems.

Best Publications

  • Tunneling spectroscopy of the Si(111)2 × 1 surface

    R.M. Feenstra;Joseph A. Stroscio;A.P. Fein

  • Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy

    Joseph A. Stroscio;R. M. Feenstra;A. P. Fein

  • Atom-selective imaging of the GaAs(110) surface.

    R. M. Feenstra;Joseph A. Stroscio;J. Tersoff;A. P. Fein

  • Tunneling spectroscopy of the GaAs(110) surface

    R. M. Feenstra;Joseph A. Stroscio

  • Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors.

    R. M. Feenstra

  • Reconstructions of the GaN\(0001̄\) Surface

    A. R. Smith;R. M. Feenstra;D. W. Greve;Jörg Neugebauer

  • Structure of GaN(0001): The laterally contracted Ga bilayer model

    John E. Northrup;J. Neugebauer;R. M. Feenstra;A. R. Smith

  • Determination of wurtzite GaN lattice polarity based on surface reconstruction

    A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin

  • Adatom kinetics on and below the surface: The existence of a new diffusion channel

    Jörg Neugebauer;Tosja K. Zywietz;Matthias Scheffler;John E. Northrup

  • Real-space observation of π -bonded chains and surface disorder on Si(111)2×1

    R. M. Feenstra;W. A. Thompson;A. P. Fein

  • Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

    A. R. Smith;R. M. Feenstra;D. W. Greve;M. S. Shin

  • Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy

    P. Mårtensson;R. M. Feenstra

  • Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

    V. Ramachandran;M. F. Brady;A. R. Smith;R. M. Feenstra

  • Inversion of wurtzite GaN(0001) by exposure to magnesium

    V. Ramachandran;R. M. Feenstra;W. L. Sarney;L. Salamanca-Riba

  • Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface.

    Joseph A. Stroscio;R. M. Feenstra;A. P. Fein

  • Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

    K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour

  • Scanning tunneling spectroscopy

    Randall M Feenstra

  • Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure

    Ivan Vlassiouk;Sergei Smirnov;Murari Regmi;Sumedh P. Surwade

  • Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy.

    R. M. Feenstra;P. Mårtensson

  • Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.

    R. M. Feenstra;J. M. Woodall;G. D. Pettit

Frequent Co-Authors

John E. Northrup
John E. Northrup Palo Alto Research Center
Joseph A. Stroscio
Joseph A. Stroscio National Institute of Standards and Technology
Jörg Neugebauer
Jörg Neugebauer Max Planck Institute for Iron Research
Joshua A. Robinson
Joshua A. Robinson Pennsylvania State University
Gong Gu
Gong Gu University of Tennessee at Knoxville
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Kyeongjae Cho
Kyeongjae Cho The University of Texas at Dallas
T. C. McGill
T. C. McGill California Institute of Technology
Marek Skowronski
Marek Skowronski Carnegie Mellon University
Lourdes Salamanca-Riba
Lourdes Salamanca-Riba University of Maryland, College Park

External Links

Personal website of Randall M. Feenstra Google Scholar page

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Best Scientists Citing Randall M. Feenstra

James S. Speck

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University of California, Santa Barbara

Publications: 57

Qi-Kun Xue

Qi-Kun Xue

Southern University of Science and Technology

Publications: 41

Andrew C. Kummel

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University of California, San Diego

Publications: 34

Sylwester Porowski

Sylwester Porowski

Polish Academy of Sciences

Publications: 33

Joshua A. Robinson

Joshua A. Robinson

Pennsylvania State University

Publications: 33

Maohai Xie

Maohai Xie

University of Hong Kong

Publications: 32

Toshio Sakurai

Toshio Sakurai

Tohoku University

Publications: 31

Eva Monroy

Eva Monroy

Grenoble Alpes University

Publications: 31

Robert M. Wallace

Robert M. Wallace

The University of Texas at Dallas

Publications: 30

Izabella Grzegory

Izabella Grzegory

Polish Academy of Sciences

Publications: 30

Jerry M. Woodall

Jerry M. Woodall

University of California, Davis

Publications: 27

Roland Wiesendanger

Roland Wiesendanger

Universität Hamburg

Publications: 26

Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

Publications: 26

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Henning Riechert

Infineon Technologies (Germany)

Publications: 26

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Sanjay K. Banerjee

The University of Texas at Austin

Publications: 25

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Carnegie Mellon University

Publications: 24

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