2026 Joseph A. Stroscio: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	55	8454	8166	2084	1930	213	16266

Joseph A. Stroscio publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Joseph A. Stroscio sits on this spectrum.

50 publications 1,163+

This scientist: 213 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Joseph A. Stroscio D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Joseph A. Stroscio sits on this spectrum.

40 D-Index 165+

This scientist: 55 D-Index — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

2018 - Joseph F. Keithley Award For Advances in Measurement Science, American Physical Society
2010 - Fellow of the American Association for the Advancement of Science (AAAS)
2002 - Fellow of American Physical Society (APS) Citation For advancing our fundamental knowledge of semiconductor and metal surfaces and the innovative development, application, and dissemination of advanced methods of scanning tunneling microscopy and spectroscopy

Overview

Joseph A. Stroscio is affiliated with the National Institute of Standards and Technology in the United States. Their research primarily focuses on physics and materials science, with specific subfields in atomic and molecular physics, optics, materials chemistry, artificial intelligence, and electrical and electronic engineering.

The scientist's work spans multiple topics within their fields of study, including:

Quantum and electron transport phenomena
Graphene research and applications
Topological materials and phenomena
Surface and thin film phenomena
Force microscopy techniques and applications
Quantum information and cryptography
Mechanical and optical resonators

Among recent publications by Joseph A. Stroscio are:

"Achieving μeV tunneling resolution in an in-operando scanning tunneling microscopy, atomic force microscopy, and magnetotransport system for quantum materials research," 2020, Review of Scientific Instruments
"Tuning single-electron charging and interactions between compressible Landau level islands in graphene," 2020, Physical Review B
"A quantum ruler for orbital magnetism in moiré quantum matter," 2023, Science
"Visualizing the merger of tunably coupled graphene quantum dots," 2023, Physical Review B
"Roadmap on atomically-engineered quantum platforms," 2025, Nano Futures

Frequent collaborators include Fereshte Ghahari, Kenji Watanabe, Nikolai B. Zhitenev, Takashi Taniguchi, and Daniel Walkup.

The venues where Joseph A. Stroscio has published most frequently are:

Physical Review B
arXiv (Cornell University)
Review of Scientific Instruments
Science
Nano Futures

Joseph A. Stroscio has received several recognitions, such as the Joseph F. Keithley Award For Advances in Measurement Science from the American Physical Society in 2018. They were named a Fellow of the American Association for the Advancement of Science (AAAS) in 2010 and a Fellow of the American Physical Society in 2002. The APS fellowship citation highlights contributions to semiconductor and metal surface knowledge and the development and dissemination of advanced scanning tunneling microscopy and spectroscopy methods.

Best Publications

Atomic and molecular manipulation with the scanning tunneling microscope

Joseph A. Stroscio;D. M. Eigler

1335
Citations
Scattering and interference in epitaxial graphene.

G. M. Rutter;G. M. Rutter;J. N. Crain;J. N. Crain;N. P. Guisinger;N. P. Guisinger;T. Li;T. Li

939
Citations
Tunneling spectroscopy of the Si(111)2 × 1 surface

R.M. Feenstra;Joseph A. Stroscio;A.P. Fein

859
Citations
Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy

Joseph A. Stroscio;R. M. Feenstra;A. P. Fein

837
Citations
Atom-selective imaging of the GaAs(110) surface.

R. M. Feenstra;Joseph A. Stroscio;J. Tersoff;A. P. Fein

830
Citations
Scanning tunneling microscopy

Joseph Anthony Stroscio;William J. Kaiser

607
Citations
Observing the Quantization of Zero Mass Carriers in Graphene

David L. Miller;Kevin D. Kubista;Gregory M. Rutter;Ming Ruan

602
Citations
Tunneling spectroscopy of the GaAs(110) surface

R. M. Feenstra;Joseph A. Stroscio

564
Citations
Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxy.

Joseph A. Stroscio;Daniel T. Pierce

395
Citations
Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffraction.

Joseph A. Stroscio;Daniel T. Pierce;Robert A. Dragoset

390
Citations
Manipulation of adsorbed atoms and creation of new structures on room-temperature surfaces with a scanning tunneling microscope

L Whitman;Joseph A. Stroscio;Robert A. Dragoset;Robert Celotta

385
Citations
Controlling the dynamics of a single atom in lateral atom manipulation.

Joseph A. Stroscio;Robert J. Celotta

369
Citations
Electromechanical Properties of Graphene Drumheads

Nikolai N. Klimov;Nikolai N. Klimov;Suyong Jung;Suyong Jung;Shuze Zhu;Teng Li

358
Citations
Coarsening of Unstable Surface Features during Fe(001) Homoepitaxy

Joseph A. Stroscio;Daniel T. Pierce;Mark D. Stiles;A Zangwill

311
Citations
Epitaxial Graphenes on Silicon Carbide

Phillip N. First;Walt A. de Heer;Thomas Seyller;Claire Berger

275
Citations
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface.

Joseph A. Stroscio;R. M. Feenstra;A. P. Fein

273
Citations
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour

265
Citations
Experimental evidence for s-wave pairing symmetry in superconducting Cu(x)Bi2Se3 single crystals using a scanning tunneling microscope

Niv Levy;Tong Zhang;Tong Zhang;Jeonghoon Ha;Fred Sharifi

261
Citations
Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

Gregory M. Rutter;N Guisinger;Jason Crain;Emily Jarvis

260
Citations
Atomic-scale observations of alloying at the Cr-Fe(001) interface.

Angela Davies;Joseph A. Stroscio;Daniel T. Pierce;Robert Celotta

260
Citations