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D-Index & Metrics

Materials Science

D-Index
77
Citations
63676
World Ranking
3047
National Ranking
848

Walt A. de Heer publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Walt A. de Heer sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 266 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Walt A. de Heer D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Walt A. de Heer sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 77 D-Index — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2003 - Fellow of American Physical Society (APS) Citation For seminal contributions to our understanding of the electronic properties of free metal clusters and for the studies of the field emission and transport properties of nanotubes

Overview

Walt A. de Heer is affiliated with the Georgia Institute of Technology in the United States. Their research spans the fields of Materials Science and Physics and Astronomy, with a particular focus on Materials Chemistry, Atomic and Molecular Physics and Optics, and Electrical and Electronic Engineering.

The main topics of their work include:

  • Graphene research and applications
  • Thermal properties of materials
  • Quantum and electron transport phenomena
  • Boron and Carbon Nanomaterials Research
  • 2D Materials and Applications
  • ZnO doping and properties
  • Topological Materials and Phenomena

Walt A. de Heer has authored several recent papers, indicating a consistent output in high-impact journals. These include:

  • Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide, 2024, Nature
  • Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition, 2020, ACS Nano
  • An epitaxial graphene platform for zero-energy edge state nanoelectronics, 2022, Nature Communications
  • Non-Invasive Nanoscale Potentiometry and Ballistic Transport in Epigraphene Nanoribbons, 2020, Nano Letters
  • Magnetic nanodoping: Atomic control of spin states in cobalt doped silver clusters, 2023, Physical Review Research

The scientist has frequently published in venues such as:

  • arXiv (Cornell University)
  • Nature
  • ACS Nano
  • Nature Communications
  • Physical Review Research

Collaborations have been an element of their research, with frequent co-authors including Claire Berger, Noel Dudeck, Frédéric Fossard, Annick Loiseau, and Paul L. Voss.

Walt A. de Heer was recognized as a Fellow of the American Physical Society in 2003, with a citation noting contributions related to the electronic properties of free metal clusters, as well as studies on the field emission and transport properties of nanotubes.

Best Publications

  • Carbon Nanotubes--the Route Toward Applications

    Ray H. Baughman;Anvar A. Zakhidov;Walt A. de Heer

  • Electronic Confinement and Coherence in Patterned Epitaxial Graphene

    Claire Berger;Claire Berger;Zhimin Song;Xuebin Li;Xiaosong Wu

  • Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics.

    Claire Berger;Zhimin Song;Tianbo Li;Xuebin Li

  • A Carbon Nanotube Field-Emission Electron Source

    Walt A. de Heer;A. Châtelain;D. Ugarte

  • The physics of simple metal clusters: experimental aspects and simple models

    Walt A. de Heer

  • Carbon nanotube quantum resistors

    Stefan Frank;Philippe Poncharal;Z. L. Wang;Walt A. de Heer

  • Electronic Shell Structure and Abundances of Sodium Clusters

    W. D. Knight;Keith Clemenger;Walt A. de Heer;Winston A. Saunders

  • Electrostatic deflections and electromechanical resonances of carbon nanotubes

    Philippe Poncharal;Z. L. Wang;Daniel Ugarte;Walt A. de Heer

  • Epitaxial graphene

    Walt A. de Heer;Claire Berger;Xiaosong Wu;Phillip N. First

  • Field emission from single-wall carbon nanotube films

    Jean-Marc Bonard;Jean-Paul Salvetat;Thomas Stöckli;Walt A. de Heer

  • Chemical Modification of Epitaxial Graphene: Spontaneous Grafting of Aryl Groups

    Elena Bekyarova;Mikhail E. Itkis;Palanisamy Ramesh;Claire Berger

  • Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics

    Zhongqing Wei;Debin Wang;Suenne Kim;Soo Young Kim;Soo Young Kim

  • Exceptional ballistic transport in epitaxial graphene nanoribbons

    Jens Baringhaus;Ming Ruan;Frederik Edler;Antonio Tejeda

  • Room-temperature metastability of multilayer graphene oxide films

    Suenne Kim;Si Zhou;Yike Hu;Muge Acik

  • Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

    Walt. A. de Heer;Claire Berger;Ming Ruan;Mike Sprinkle

  • Observing the Quantization of Zero Mass Carriers in Graphene

    David L. Miller;Kevin D. Kubista;Gregory M. Rutter;Ming Ruan

  • Ultrafast Relaxation of Excited Dirac Fermions in Epitaxial Graphene Using Optical Differential Transmission Spectroscopy

    Dong Sun;Zong-Kwei Wu;Charles Divin;Xuebin Li

  • Electronic Shell Structure and Metal Clusters

    Walt A. de Heer;W.D. Knight;M.Y. Chou;Marvin L. Cohen

  • Highly efficient spin transport in epitaxial graphene on SiC

    Bruno Dlubak;Marie-Blandine Martin;Cyrile Deranlot;Bernard Servet

  • Epitaxial graphene transistors on SiC substrates

    Jakub Kedzierski;Pei-Lan Hsu;Paul Healey;Peter Wyatt

Frequent Co-Authors

Claire Berger
Claire Berger Georgia Institute of Technology
Joseph A. Stroscio
Joseph A. Stroscio National Institute of Standards and Technology
Elisa Riedo
Elisa Riedo New York University
Theodore B. Norris
Theodore B. Norris University of Michigan–Ann Arbor
László Forró
László Forró University of Notre Dame
Ermin Malic
Ermin Malic Philipp University of Marburg
Robert C. Haddon
Robert C. Haddon University of California, Riverside
John E. Sipe
John E. Sipe University of Toronto
Elena Bekyarova
Elena Bekyarova University of California, Riverside
Jean-Marc Bonard
Jean-Marc Bonard École Polytechnique Fédérale de Lausanne

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