The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where William I. Milne sits on this spectrum.
This scientist: 836 publications — 97th percentile
97% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where William I. Milne sits on this spectrum.
This scientist: 96 D-Index — 90th percentile
90% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
William I. Milne is affiliated with the University of Cambridge in the United Kingdom and works primarily in the fields of Engineering and Materials Science. Their research interests span various subfields including Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.
Their recent research has focused on topics such as ZnO doping and properties, Thin-Film Transistor Technologies, Semiconductor materials and devices, Silicon Nanostructures and Photoluminescence, Nanowire Synthesis and Applications, Semiconductor materials and interfaces, and Advancements in Semiconductor Devices and Circuit Design.
Frequent collaborators in their research include Arokia Nathan, George Adamopoulos, Giorgos Antoniou, Dimitrios Afouxenidis, and Nathan R. Halcovitch.
William I. Milne has been recognized as a Fellow of the Royal Academy of Engineering (UK) since 2006 and also holds fellowship with the American Association for the Advancement of Science (AAAS) since 1941.
Kenneth K. S. Lau;José Bico;Kenneth B. K. Teo;Manish Chhowalla
M. Chhowalla;K. B. K. Teo;C. Ducati;N. L. Rupesinghe
A. Nathan;A. Ahnood;M. T. Cole;Sungsik Lee
P. J. Fallon;V. S. Veerasamy;C. A. Davis;J. Robertson
Oleksiy Rozhin;Andrea Ferrari;William Ireland Milne
F. Wang;A. G. Rozhin;V. Scardaci;Z. Sun
Yong Qing Fu;Yong Qing Fu;Jack Luo;Nam-Trung Nguyen;Anthony Walton
Zhigang Zhu;Luis Garcia-Gancedo;Andrew J. Flewitt;Huaqing Xie
Yong Qing Fu;Yong Qing Fu;Jikui Luo;Jikui Luo;X. Du;Andrew Flewitt
W. I. Milne;K. B. K. Teo;G. A. J. Amaratunga;P. Legagneux
K. B. K. Teo;M. Chhowalla;G. A. J. Amaratunga;W. I. Milne
B.S. Satyanarayana;A. Hart;W.I. Milne;J. Robertson
Kenneth B. K. Teo;Eric Minoux;Ludovic Hudanski;Franck Peauger
M. Chhowalla;J. Robertson;C. W. Chen;S. R. P. Silva
Shi Xu;B. K. Tay;H. S. Tan;Li Zhong
K. B. K. Teo;M. Chhowalla;G. A. J. Amaratunga;W. I. Milne
K. B.K. Teo;S. B. Lee;Manishkumar Chhowalla;V. Semet
K. W. R. Gilkes;H. S. Sands;D. N. Batchelder;J. Robertson
H.J. Qi;K.B.K. Teo;K.K.S. Lau;M.C. Boyce
M. J. Powell;C. van Berkel;A. R. Franklin;S. C. Deane
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