The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John Robertson sits on this spectrum.
This scientist: 995 publications — 99th percentile
99% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John Robertson sits on this spectrum.
This scientist: 152 D-Index — 99th percentile
99% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
John Robertson is affiliated with the University of Cambridge in the United Kingdom. Their research primarily spans the fields of Materials Science and Medicine, with a particular focus on subfields including Materials Chemistry, Molecular Biology, Electrical and Electronic Engineering, Radiology, Nuclear Medicine and Imaging, and Oncology.
Their work covers various main topics, notably Nanoparticle-Based Drug Delivery, Nuclear Physics and Applications, Ga2O3 and related materials, Electronic and Structural Properties of Oxides, RNA Interference and Gene Delivery, Advanced biosensing and bioanalysis techniques, and DNA and Nucleic Acid Chemistry.
Key papers authored or coauthored by John Robertson include:
Frequent co-authors collaborating with John Robertson include Md. Nazir Hossen, Resham Bhattacharya, Priyabrata Mukherjee, Zhaofu Zhang, and Lin Wang.
The venues where John Robertson has published work reflect a diverse range of scientific journals and conferences, including Science Advances, International Journal of Nanomedicine, Advanced Science, Physical review. C, and Surfaces and Interfaces.
John Robertson has been recognized with notable professional distinctions such as the Fellow of the Royal Society, United Kingdom, awarded in 2015, and the IEEE Fellow designation in 2013, the latter acknowledging contributions to the understanding of high-k dielectrics and metal gate electrodes for CMOS technology.
A. C. Ferrari;J. Robertson
J. Robertson
A. C. Ferrari;J. Robertson
Andrea Carlo Ferrari;John Robertson
John Robertson
J. Robertson
John Robertson
J. Robertson;E. P. O’Reilly
C. Casiraghi;A. C. Ferrari;J. Robertson
M. Chhowalla;K. B. K. Teo;C. Ducati;N. L. Rupesinghe
Kostiantyn Shportko;Stephan Kremers;Michael Woda;Dominic Lencer
A. C. Ferrari;J. Robertson
A. Nathan;A. Ahnood;M. T. Cole;Sungsik Lee
S. Piscanec;M. Lazzeri;Francesco Mauri;A. C. Ferrari
John Robertson
P. J. Fallon;V. S. Veerasamy;C. A. Davis;J. Robertson
J. Robertson
A. C. Ferrari;S. E. Rodil;J. Robertson
Stephan Hofmann;Renu Sharma;Caterina Ducati;Gaohui Du
John Robertson;Robert M. Wallace
Arokia Nathan;Arman Ahnood;Matthew T. Cole;Sungsik Lee
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