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Masayoshi Umeno

Masayoshi Umeno

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5952
World Ranking
5114
National Ranking
213

Best Publications

  • Planer nano-graphenes from camphor by CVD

    Prakash R. Somani;Savita P. Somani;Masayoshi Umeno

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

    Shiro Sakai;Tetsuo Soga;Masanari Takeyasu;Masayoshi Umeno

  • Low temperature growth of graphene film by microwave assisted surface wave plasma CVD for transparent electrode application

    Golap Kalita;Koichi Wakita;Masayoshi Umeno

  • Graphene constructed carbon thin films as transparent electrodes for solar cell applications

    Golap Kalita;Masahiro Matsushima;Hideo Uchida;Koichi Wakita

  • Femtosecond laser induced micropatterning of graphene film

    Golap Kalita;Litao Qi;Yoshiharu Namba;Koichi Wakita

  • Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

    Masayoshi Umeno;Sunil Adhikary

  • Determination of optical constants of solgel-derived inhomogeneous TiO 2 thin films by spectroscopic ellipsometry and transmission spectroscopy

    Md. Mosaddeq-ur-Rahman;Guolin Yu;Kalaga Murali Krishna;Tetsuo Soga

  • Epitaxial growth and material properties of GaAs on Si grown by MOCVD

    Tetsuo Soga;Shuzo Hattori;Shiro Sakai;Masayoshi Umeno

  • Silicon nanowire array/polymer hybrid solar cell incorporating carbon nanotubes

    Golap Kalita;Sudip Adhikari;Hare Ram Aryal;Rakesh Afre

  • Toward organic thick film solar cells: Three dimensional bulk heterojunction organic thick film solar cell using fullerene single crystal nanorods

    Prakash R. Somani;Savita P. Somani;Masayoshi Umeno

  • Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron

    Y. Hayashi;S. Ishikawa;T. Soga;M. Umeno

  • FEW LAYERS OF GRAPHENE AS TRANSPARENT ELECTRODE FROM BOTANICAL DERIVATIVE CAMPHOR

    Golap Kalita;Matsushima Masahiro;Hideo Uchida;Koichi Wakita

  • Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition

    Zaman Iqbal Kazi;Periyasamy Thilakan;Takashi Egawa;Masayoshi Umeno

  • Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices

    Yasuhito Takahashi;Shiro Sakai;Masayoshi Umeno

  • Direct evidence for self‐annihilation of antiphase domains in GaAs/Si heterostructures

    O. Ueda;Tetsuo Soga;Takashi Jimbo;Masayoshi Umeno

  • Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

    H. Jiang;G. Y. Zhao;H. Ishikawa;Takashi Egawa

  • AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD

    Shiro Sakai;Tetsuo Soga;Masanari Takeyasu;Masayoshi Umeno

  • Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells

    Mohamad Rusop;Shariff M. Mominuzzaman;Tetsuo Soga;Takashi Jimbo

  • Improving photovoltaic properties by incorporating both single walled carbon nanotubes and functionalized multiwalled carbon nanotubes

    Ishwor Khatri;Sudip Adhikari;Hare Ram Aryal;Tetsuo Soga

  • Fullerene (C60) decoration in oxygen plasma treated multiwalled carbon nanotubes for photovoltaic application

    Golap Kalita;Sudip Adhikari;Hare Ram Aryal;Masayoshi Umeno

  • Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

    Masahiro Sakai;Hiroyasu Ishikawa;Takashi Egawa;Takashi Jimbo

  • Improving photovoltaic response of poly(3-hexylthiophene)/n-Si heterojunction by incorporating double walled carbon nanotubes

    Savita P. Somani;Prakash R. Somani;Masayoshi Umeno;Emmanuel Flahaut

  • Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition

    Takashi Egawa;Yoshiaki Hasegawa;Takashi Jimbo;Masayoshi Umeno

Frequent Co-Authors

Takashi Jimbo
Takashi Jimbo Nagoya Institute of Technology
Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Masaki Tanemura
Masaki Tanemura Nagoya Institute of Technology
Emmanuel Flahaut
Emmanuel Flahaut Paul Sabatier University
Shu Ping Lau
Shu Ping Lau Hong Kong Polytechnic University
Masashi Yoshimura
Masashi Yoshimura Osaka University
Lianxi Zheng
Lianxi Zheng Khalifa University
Aung Ko Ko Kyaw
Aung Ko Ko Kyaw Southern University of Science and Technology

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