World's Best Scientists 2026 revealed!
Masayoshi Umeno

Masayoshi Umeno

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5952
World Ranking
5114
National Ranking
213

Masayoshi Umeno publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Masayoshi Umeno sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 378 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Masayoshi Umeno D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Masayoshi Umeno sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Planer nano-graphenes from camphor by CVD

    Prakash R. Somani;Savita P. Somani;Masayoshi Umeno

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

    Shiro Sakai;Tetsuo Soga;Masanari Takeyasu;Masayoshi Umeno

  • Low temperature growth of graphene film by microwave assisted surface wave plasma CVD for transparent electrode application

    Golap Kalita;Koichi Wakita;Masayoshi Umeno

  • Graphene constructed carbon thin films as transparent electrodes for solar cell applications

    Golap Kalita;Masahiro Matsushima;Hideo Uchida;Koichi Wakita

  • Femtosecond laser induced micropatterning of graphene film

    Golap Kalita;Litao Qi;Yoshiharu Namba;Koichi Wakita

  • Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

    Masayoshi Umeno;Sunil Adhikary

  • Determination of optical constants of solgel-derived inhomogeneous TiO 2 thin films by spectroscopic ellipsometry and transmission spectroscopy

    Md. Mosaddeq-ur-Rahman;Guolin Yu;Kalaga Murali Krishna;Tetsuo Soga

  • Epitaxial growth and material properties of GaAs on Si grown by MOCVD

    Tetsuo Soga;Shuzo Hattori;Shiro Sakai;Masayoshi Umeno

  • Silicon nanowire array/polymer hybrid solar cell incorporating carbon nanotubes

    Golap Kalita;Sudip Adhikari;Hare Ram Aryal;Rakesh Afre

  • Toward organic thick film solar cells: Three dimensional bulk heterojunction organic thick film solar cell using fullerene single crystal nanorods

    Prakash R. Somani;Savita P. Somani;Masayoshi Umeno

  • Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron

    Y. Hayashi;S. Ishikawa;T. Soga;M. Umeno

  • FEW LAYERS OF GRAPHENE AS TRANSPARENT ELECTRODE FROM BOTANICAL DERIVATIVE CAMPHOR

    Golap Kalita;Matsushima Masahiro;Hideo Uchida;Koichi Wakita

  • Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition

    Zaman Iqbal Kazi;Periyasamy Thilakan;Takashi Egawa;Masayoshi Umeno

  • Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices

    Yasuhito Takahashi;Shiro Sakai;Masayoshi Umeno

  • Direct evidence for self‐annihilation of antiphase domains in GaAs/Si heterostructures

    O. Ueda;Tetsuo Soga;Takashi Jimbo;Masayoshi Umeno

  • Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

    H. Jiang;G. Y. Zhao;H. Ishikawa;Takashi Egawa

  • AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD

    Shiro Sakai;Tetsuo Soga;Masanari Takeyasu;Masayoshi Umeno

  • Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells

    Mohamad Rusop;Shariff M. Mominuzzaman;Tetsuo Soga;Takashi Jimbo

  • Improving photovoltaic properties by incorporating both single walled carbon nanotubes and functionalized multiwalled carbon nanotubes

    Ishwor Khatri;Sudip Adhikari;Hare Ram Aryal;Tetsuo Soga

  • Fullerene (C60) decoration in oxygen plasma treated multiwalled carbon nanotubes for photovoltaic application

    Golap Kalita;Sudip Adhikari;Hare Ram Aryal;Masayoshi Umeno

  • Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

    Masahiro Sakai;Hiroyasu Ishikawa;Takashi Egawa;Takashi Jimbo

  • Improving photovoltaic response of poly(3-hexylthiophene)/n-Si heterojunction by incorporating double walled carbon nanotubes

    Savita P. Somani;Prakash R. Somani;Masayoshi Umeno;Emmanuel Flahaut

  • Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition

    Takashi Egawa;Yoshiaki Hasegawa;Takashi Jimbo;Masayoshi Umeno

Frequent Co-Authors

Takashi Jimbo
Takashi Jimbo Nagoya Institute of Technology
Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Hiroyasu Ishikawa
Hiroyasu Ishikawa Shibaura Institute of Technology
Masaki Tanemura
Masaki Tanemura Nagoya Institute of Technology
Emmanuel Flahaut
Emmanuel Flahaut Paul Sabatier University
Shu Ping Lau
Shu Ping Lau Hong Kong Polytechnic University
Takao Yonehara
Takao Yonehara Canon (Japan)
Lianxi Zheng
Lianxi Zheng Khalifa University
Masashi Yoshimura
Masashi Yoshimura Osaka University

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