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Masayoshi Umeno

Masayoshi Umeno

Overview

Masayoshi Umeno is affiliated with Chubu University in Japan and has contributed extensively to the fields of Materials Science and Engineering. Their research activities focus on various aspects of Materials Chemistry, Biomedical Engineering, Electrical and Electronic Engineering, as well as emerging areas such as Artificial Intelligence and Automotive Engineering.

Their research prominently involves investigations into graphene and related nanomaterials. Key topics covered in their work include:

  • Graphene research and applications
  • Graphene and Nanomaterials Applications
  • Advancements in Battery Materials
  • Diamond and Carbon-based Materials Research
  • Carbon Nanotubes in Composites
  • Neural Networks and Applications
  • Analog and Mixed-Signal Circuit Design

Publications by Masayoshi Umeno span multiple respected scientific journals with a focus on materials chemistry and nanotechnology. Frequent publication venues include:

  • Materials Chemistry and Physics
  • RSC Advances
  • Nanotechnology
  • Diamond and Related Materials
  • AppliedChem

Some selected papers authored or co-authored by Umeno are:

  • Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD (2022, RSC Advances)
  • Laser-assisted graphene growth directly on silicon (2021, Nanotechnology)
  • Laser-assisted doping of graphene for transparent conducting electrodes (2021, Materials Chemistry and Physics)
  • Effective reduction and doping of graphene oxide films at near-room temperature by microwave-excited surface-wave plasma process (2022, Diamond and Related Materials)
  • Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods (2022, AppliedChem)

Masayoshi Umeno has collaborated frequently with several researchers, including:

  • Rucheng Zhu
  • Riteshkumar Vishwakarma
  • Tetsuo Soga
  • Balaram Paudel Jaisi
  • Golap Kalita

Best Publications

  • Efficient Solar Water Splitting, Exemplified by RuO2-Catalyzed AlGaAs/Si Photoelectrolysis

    S. Licht;and B. Wang;S. Mukerji;T. Soga and

  • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

    G. Yu;G. Wang;H. Ishikawa;Masayoshi Umeno

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Optical properties and X-ray photoelectron spectroscopic study of pure and Pb-doped TiO2 thin films

    M.M. Rahman;K.M. Krishna;T. Soga;T. Jimbo

  • Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Over 18% solar energy conversion to generation of hydrogen fuel; theory and experiment for efficient solar water splitting

    S Licht;B Wang;S Mukerji;T Soga

  • Thermal stability of GaN on (111)Si substrate

    Hiroyasu Ishikawa;Kensaku Yamamoto;Takashi Egawa;Tetsuo Soga

  • Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice

    Masayoshi Umeno;Shiro Sakai;Shinichiro Yahagi

  • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

    N. Nakada;M. Nakaji;Hiroyasu Ishikawa;T. Egawa

  • Structural and optical properties of diamond and nano-diamond films grown by microwave plasma chemical vapor deposition

    T. Sharda;M.M. Rahaman;Y. Nukaya;T. Soga

  • Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition

    Tetsuo Soga;Shuzo Hattori;Shiro Sakai;Masanari Takeyasu

  • Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    Y. Hayashi;G. Yu;M. M. Rahman;K. M. Krishna

  • Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

    Shiro Sakai;Tetsuo Soga;Masanari Takeyasu;Masayoshi Umeno

  • Carbon nanotubes by spray pyrolysis of turpentine oil at different temperatures and their studies

    Rakesh A. Afre;T. Soga;T. Jimbo;Mukul Kumar

  • Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

    T. Egawa;Hiroyasu Ishikawa;M. Umeno;T. Jimbo

  • Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor: A Natural Source

    Sharif Md. Mominuzzaman;Kalaga Murali Krishna;Tetsuo Soga;Takashi Jimbo

  • MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers

    T. Soga;S. Hattori;S. Sakai;M. Takeyasu

  • Photovoltaic and spectral photoresponse characteristics of n-C/p-C solar cell on a p-silicon substrate

    K. M. Krishna;Masayoshi Umeno;Y. Nukaya;Tetsuo Soga

  • High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

    H. Ishikawa;G. Y. Zhao;N. Nakada;T. Egawa

  • Raman spectra of ion beam sputtered amorphous carbon thin films deposited from camphoric carbon

    Sharif Mohammad Mominuzzaman;Kalaga Murali Krishna;Tetsuo Soga;Takashi Jimbo

Frequent Co-Authors

Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Takashi Jimbo
Takashi Jimbo Nagoya Institute of Technology
Sakae Tanemura
Sakae Tanemura Guilin University of Electronic Technology
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
P. Ramasamy
P. Ramasamy Sri Sivasubramaniya Nadar College of Engineering

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