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Masayoshi Umeno

Masayoshi Umeno

Chubu University
Japan

Masayoshi Umeno publications per year

The chart shows the history of publications by Masayoshi Umeno between 1962 and 2019, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Masayoshi Umeno published across 58 years, from 1962 to 2019, averaging 7.1 papers a year. Output peaked at 37 publications in 2001. 1 of the 411 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1962 to 2019. Vertical axis: number of publications, 0 to 37. Peak 37 publications in 2001. 1962: 1 publication 1963: 0 publications 1964: 0 publications 1965: 1 publication 1966: 1 publication 1967: 0 publications 1968: 2 publications 1969: 1 publication 1970: 3 publications 1971: 0 publications 1972: 3 publications 1973: 2 publications 1974: 4 publications 1975: 1 publication 1976: 3 publications 1977: 0 publications 1978: 1 publication 1979: 3 publications 1980: 6 publications 1981: 1 publication 1982: 10 publications 1983: 3 publications 1984: 7 publications 1985: 0 publications 1986: 4 publications 1987: 9 publications 1988: 7 publications 1989: 9 publications 1990: 8 publications 1991: 9 publications 1992: 5 publications 1993: 12 publications 1994: 15 publications 1995: 10 publications 1996: 15 publications 1997: 17 publications 1998: 20 publications 1999: 28 publications 2000: 34 publications 2001: 37 publications 2002: 34 publications 2003: 8 publications 2004: 12 publications 2005: 22 publications 2006: 16 publications 2007: 6 publications 2008: 12 publications 2009: 3 publications 2010: 1 publication 2011: 1 publication 2012: 0 publications 2013: 2 publications 2014: 1 publication 2015: 0 publications 2016: 0 publications 2017: 0 publications 2018: 0 publications 2019: 1 publication
1962 2019

411 publications in total across all disciplines

View publications per year as a table
Masayoshi Umeno: publications per year, 1962 to 2019
Year Publications
1962 1
1963 0
1964 0
1965 1
1966 1
1967 0
1968 2
1969 1
1970 3
1971 0
1972 3
1973 2
1974 4
1975 1
1976 3
1977 0
1978 1
1979 3
1980 6
1981 1
1982 10
1983 3
1984 7
1985 0
1986 4
1987 9
1988 7
1989 9
1990 8
1991 9
1992 5
1993 12
1994 15
1995 10
1996 15
1997 17
1998 20
1999 28
2000 34
2001 37
2002 34
2003 8
2004 12
2005 22
2006 16
2007 6
2008 12
2009 3
2010 1
2011 1
2012 0
2013 2
2014 1
2015 0
2016 0
2017 0
2018 0
2019 1
Total 411
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Masayoshi Umeno publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Masayoshi Umeno sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Masayoshi Umeno D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Masayoshi Umeno sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Masayoshi Umeno is affiliated with Chubu University in Japan and has contributed extensively to the fields of Materials Science and Engineering. Their research activities focus on various aspects of Materials Chemistry, Biomedical Engineering, Electrical and Electronic Engineering, as well as emerging areas such as Artificial Intelligence and Automotive Engineering.

Their research prominently involves investigations into graphene and related nanomaterials. Key topics covered in their work include:

  • Graphene research and applications
  • Graphene and Nanomaterials Applications
  • Advancements in Battery Materials
  • Diamond and Carbon-based Materials Research
  • Carbon Nanotubes in Composites
  • Neural Networks and Applications
  • Analog and Mixed-Signal Circuit Design

Publications by Masayoshi Umeno span multiple respected scientific journals with a focus on materials chemistry and nanotechnology. Frequent publication venues include:

  • Materials Chemistry and Physics
  • RSC Advances
  • Nanotechnology
  • Diamond and Related Materials
  • AppliedChem

Some selected papers authored or co-authored by Umeno are:

  • Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD (2022, RSC Advances)
  • Laser-assisted graphene growth directly on silicon (2021, Nanotechnology)
  • Laser-assisted doping of graphene for transparent conducting electrodes (2021, Materials Chemistry and Physics)
  • Effective reduction and doping of graphene oxide films at near-room temperature by microwave-excited surface-wave plasma process (2022, Diamond and Related Materials)
  • Synthesis of Graphene and Related Materials by Microwave-Excited Surface Wave Plasma CVD Methods (2022, AppliedChem)

Masayoshi Umeno has collaborated frequently with several researchers, including:

  • Rucheng Zhu
  • Riteshkumar Vishwakarma
  • Tetsuo Soga
  • Balaram Paudel Jaisi
  • Golap Kalita

Best Publications

  • Efficient Solar Water Splitting, Exemplified by RuO2-Catalyzed AlGaAs/Si Photoelectrolysis

    S. Licht;and B. Wang;S. Mukerji;T. Soga and

  • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

    G. Yu;G. Wang;H. Ishikawa;Masayoshi Umeno

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Optical properties and X-ray photoelectron spectroscopic study of pure and Pb-doped TiO2 thin films

    M.M. Rahman;K.M. Krishna;T. Soga;T. Jimbo

  • Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Over 18% solar energy conversion to generation of hydrogen fuel; theory and experiment for efficient solar water splitting

    S Licht;B Wang;S Mukerji;T Soga

  • Thermal stability of GaN on (111)Si substrate

    Hiroyasu Ishikawa;Kensaku Yamamoto;Takashi Egawa;Tetsuo Soga

  • Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice

    Masayoshi Umeno;Shiro Sakai;Shinichiro Yahagi

  • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

    N. Nakada;M. Nakaji;Hiroyasu Ishikawa;T. Egawa

  • Structural and optical properties of diamond and nano-diamond films grown by microwave plasma chemical vapor deposition

    T. Sharda;M.M. Rahaman;Y. Nukaya;T. Soga

  • Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition

    Tetsuo Soga;Shuzo Hattori;Shiro Sakai;Masanari Takeyasu

  • Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    Y. Hayashi;G. Yu;M. M. Rahman;K. M. Krishna

  • Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

    Shiro Sakai;Tetsuo Soga;Masanari Takeyasu;Masayoshi Umeno

  • Carbon nanotubes by spray pyrolysis of turpentine oil at different temperatures and their studies

    Rakesh A. Afre;T. Soga;T. Jimbo;Mukul Kumar

  • Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

    T. Egawa;Hiroyasu Ishikawa;M. Umeno;T. Jimbo

  • Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor: A Natural Source

    Sharif Md. Mominuzzaman;Kalaga Murali Krishna;Tetsuo Soga;Takashi Jimbo

  • MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers

    T. Soga;S. Hattori;S. Sakai;M. Takeyasu

  • Photovoltaic and spectral photoresponse characteristics of n-C/p-C solar cell on a p-silicon substrate

    K. M. Krishna;Masayoshi Umeno;Y. Nukaya;Tetsuo Soga

  • High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

    H. Ishikawa;G. Y. Zhao;N. Nakada;T. Egawa

  • Raman spectra of ion beam sputtered amorphous carbon thin films deposited from camphoric carbon

    Sharif Mohammad Mominuzzaman;Kalaga Murali Krishna;Tetsuo Soga;Takashi Jimbo

Frequent Co-Authors

Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Takashi Jimbo
Takashi Jimbo Nagoya Institute of Technology
Sakae Tanemura
Sakae Tanemura Guilin University of Electronic Technology
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
P. Ramasamy
P. Ramasamy Sri Sivasubramaniya Nadar College of Engineering

External Links

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Best Scientists Citing Masayoshi Umeno

Tetsuo Soga

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Publications: 99

Takashi Jimbo

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Nagoya Institute of Technology

Publications: 95

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Nagoya Institute of Technology

Publications: 40

Fan Ren

Fan Ren

University of Florida

Publications: 30

Nathan S. Lewis

Nathan S. Lewis

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Publications: 28

Stephen J. Pearton

Stephen J. Pearton

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Publications: 25

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Brent P. Gila

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Publications: 25

C. R. Abernathy

C. R. Abernathy

University of Florida

Publications: 24

Alois Krost

Alois Krost

Otto-von-Guericke University Magdeburg

Publications: 20

Armin Dadgar

Armin Dadgar

Otto-von-Guericke University Magdeburg

Publications: 20

Harry A. Atwater

Harry A. Atwater

California Institute of Technology

Publications: 17

Jiaguo Yu

Jiaguo Yu

China University of Geosciences

Publications: 16

Roel van de Krol

Roel van de Krol

Helmholtz-Zentrum Berlin für Materialien und Energie

Publications: 16

Steven A. Ringel

Steven A. Ringel

The Ohio State University

Publications: 14

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Janusz Nowotny

Western Sydney University

Publications: 14

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Masafumi Yamaguchi

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Publications: 13

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