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Milton Feng

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 47 3255 3119 1213 1131 465 8004
Materials Science 44 12035 11637 2785 2587 435 7601

Milton Feng publications per year

The chart shows the history of publications by Milton Feng between 1978 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Milton Feng published across 48 years, from 1978 to 2025, averaging 10.2 papers a year. Output peaked at 31 publications in 2006. 12 of the 490 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1978 to 2025. Vertical axis: number of publications, 0 to 31. Peak 31 publications in 2006. 1978: 2 publications 1979: 5 publications 1980: 3 publications 1981: 3 publications 1982: 10 publications 1983: 4 publications 1984: 5 publications 1985: 1 publication 1986: 2 publications 1987: 3 publications 1988: 5 publications 1989: 18 publications 1990: 8 publications 1991: 10 publications 1992: 8 publications 1993: 16 publications 1994: 11 publications 1995: 12 publications 1996: 17 publications 1997: 13 publications 1998: 14 publications 1999: 10 publications 2000: 13 publications 2001: 9 publications 2002: 7 publications 2003: 11 publications 2004: 22 publications 2005: 15 publications 2006: 31 publications 2007: 15 publications 2008: 14 publications 2009: 15 publications 2010: 20 publications 2011: 15 publications 2012: 10 publications 2013: 15 publications 2014: 14 publications 2015: 10 publications 2016: 8 publications 2017: 11 publications 2018: 9 publications 2019: 10 publications 2020: 10 publications 2021: 5 publications 2022: 6 publications 2023: 3 publications 2024: 5 publications 2025: 7 publications
1978 2025

490 publications in total across all disciplines

View publications per year as a table
Milton Feng: publications per year, 1978 to 2025
Year Publications
1978 2
1979 5
1980 3
1981 3
1982 10
1983 4
1984 5
1985 1
1986 2
1987 3
1988 5
1989 18
1990 8
1991 10
1992 8
1993 16
1994 11
1995 12
1996 17
1997 13
1998 14
1999 10
2000 13
2001 9
2002 7
2003 11
2004 22
2005 15
2006 31
2007 15
2008 14
2009 15
2010 20
2011 15
2012 10
2013 15
2014 14
2015 10
2016 8
2017 11
2018 9
2019 10
2020 10
2021 5
2022 6
2023 3
2024 5
2025 7
Total 490
Download as CSV

Milton Feng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Milton Feng sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 454–473 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 465 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111 465
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Milton Feng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Milton Feng sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 47 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160 47
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2003 - OSA Fellows For contributions to high speed GaAs MESFET, GaAs HBT and InP HBT optical integrated receivers.
  • 1997 - IEEE David Sarnoff Award "For contributions to the theoretical and experimental understanding of the fundamental speed limitations of MESFETs and HEMTs."
  • 1992 - IEEE Fellow For contributions to the development of implanted GaAs and InGaAs millimeter-wave MESFET transistors.

Overview

Milton Feng is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their research primarily spans the field of Engineering, with a strong focus on Electrical and Electronic Engineering. Additional subfields include Atomic and Molecular Physics, and Optics, as well as contributions to Artificial Intelligence, Computer Graphics and Computer-Aided Design, and Mechanical Engineering.

The main topics of Milton Feng's work include:

  • Photonic and Optical Devices
  • Semiconductor Lasers and Optical Devices
  • Optical Network Technologies
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Molecular Junctions and Nanostructures
  • Quantum Information and Cryptography

Milton Feng has published extensively, with notable recent papers including:

  • "2.6 K VCSEL data link for cryogenic computing" (2021) in Applied Physics Letters
  • "Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser" (2020) in Optics Express
  • "Superconducting Processor Modulated VCSELs for 4K High-Speed Optical Data Link" (2022) in IEEE Journal of Quantum Electronics
  • "The Modal Effect of VCSELs on Transmitting Data Rate Over Distance in OM4 Fiber" (2020) in IEEE Journal of Quantum Electronics
  • "Temperature and Noise Dependence of Tri-Mode VCSEL Carried 120-Gbit/s QAM-OFDM Data in Back-to-Back and OM5-MMF Links" (2020) in Journal of Lightwave Technology

Frequent co-authors collaborating with Milton Feng include:

  • Haonan Wu
  • Wenning Fu
  • Chao-Hsin Wu
  • Dufei Wu
  • Yulin He

Their work has appeared in several publication venues with repeated contributions to:

  • IEEE Journal of Quantum Electronics
  • Applied Physics Letters
  • Optics Express
  • IEEE Photonics Technology Letters
  • Photonics Research

Milton Feng has received several awards recognizing their contributions to the field, including:

  • OSA Fellows (2003) for contributions to high speed GaAs MESFET, GaAs HBT and InP HBT optical integrated receivers
  • IEEE David Sarnoff Award (1997) for contributions to the theoretical and experimental understanding of the fundamental speed limitations of MESFETs and HEMTs
  • IEEE Fellow (1992) for contributions to the development of implanted GaAs and InGaAs millimeter-wave MESFET transistors

Best Publications

  • Laser operation of a heterojunction bipolar light-emitting transistor

    G. Walter;N. Holonyak;Milton Feng;R. Chan

  • Room temperature continuous wave operation of a heterojunction bipolar transistor laser

    M. Feng;N. Holonyak;G. Walter;R. Chan

  • Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles

    R. Chan;R. Lesnick;D. Becher;Milton Feng

  • Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

    Milton Feng;N. Holonyak;W. Hafez

  • Quantum-well-base heterojunction bipolar light-emitting transistor

    M. Feng;N. Holonyak;R. Chan

  • High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

    Coskun Kocabas;Simon Dunham;Qing Cao;Kurt Cimino

  • Device technologies for RF front-end circuits in next-generation wireless communications

    M. Feng;Shyh-Chiang Shen;D.C. Caruth;J.-J. Huang

  • Charge control analysis of transistor laser operation

    Milton Feng;N. Holonyak;H. W. Then;G. Walter

  • The transistor laser

    N. Holonyak;M. Feng

  • Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser

    Milton Feng;N. Holonyak;A. James;K. Cimino

  • Nanoliter volume, high-resolution NMR microspectroscopy using a 60-/spl mu/m planar microcoil

    J.E. Stocker;T.L. Peck;A.G. Webb;M. Feng

  • NMR microspectroscopy using 100 /spl mu/m planar RF coils fabricated on gallium arsenide substrates

    T.L. Peck;R.L. Magin;J. Kruse;M. Feng

  • Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz

    Walid Hafez;Milton Feng

  • Hydrogen passivation of C acceptors in high-purity GaAs

    N. Pan;S. S. Bose;M. H. Kim;G. E. Stillman

  • Resonance-free frequency response of a semiconductor laser

    M. Feng;H. W. Then;N. Holonyak;G. Walter

  • Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz

    Shyh-Chiang Shen;M. Feng

  • 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz

    Walid Hafez;William Snodgrass;Milton Feng

  • Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques

    Milton Feng;L. W. Cook;M. M. Tashima;G. E. Stillman

  • InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz

    W. Hafez;Jie Wei Lai;M. Feng

  • 4.3 GHz optical bandwidth light emitting transistor

    G. Walter;C. H. Wu;H. W. Then;Milton Feng

  • Microwave operation and modulation of a transistor laser

    R. Chan;M. Feng;N. Holonyak;G. Walter

Frequent Co-Authors

N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Shun Lien Chuang
Shun Lien Chuang University of Illinois at Urbana-Champaign
Gong-Ru Lin
Gong-Ru Lin National Taiwan University
Haydn Chen
Haydn Chen University of Macau
Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston
H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Peter M. Asbeck
Peter M. Asbeck University of California, San Diego
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign

External Links

Wikipedia of Milton Feng Personal website of Milton Feng

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Publications: 22

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Publications: 18

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Publications: 14

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