World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
8004
World Ranking
3255
National Ranking
1213

Materials Science

D-Index
44
Citations
7601
World Ranking
12035
National Ranking
2785

Milton Feng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Milton Feng sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 465 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Milton Feng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Milton Feng sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2003 - OSA Fellows For contributions to high speed GaAs MESFET, GaAs HBT and InP HBT optical integrated receivers.
  • 1997 - IEEE David Sarnoff Award "For contributions to the theoretical and experimental understanding of the fundamental speed limitations of MESFETs and HEMTs."
  • 1992 - IEEE Fellow For contributions to the development of implanted GaAs and InGaAs millimeter-wave MESFET transistors.

Overview

Milton Feng is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their research primarily spans the field of Engineering, with a strong focus on Electrical and Electronic Engineering. Additional subfields include Atomic and Molecular Physics, and Optics, as well as contributions to Artificial Intelligence, Computer Graphics and Computer-Aided Design, and Mechanical Engineering.

The main topics of Milton Feng's work include:

  • Photonic and Optical Devices
  • Semiconductor Lasers and Optical Devices
  • Optical Network Technologies
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Molecular Junctions and Nanostructures
  • Quantum Information and Cryptography

Milton Feng has published extensively, with notable recent papers including:

  • "2.6 K VCSEL data link for cryogenic computing" (2021) in Applied Physics Letters
  • "Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser" (2020) in Optics Express
  • "Superconducting Processor Modulated VCSELs for 4K High-Speed Optical Data Link" (2022) in IEEE Journal of Quantum Electronics
  • "The Modal Effect of VCSELs on Transmitting Data Rate Over Distance in OM4 Fiber" (2020) in IEEE Journal of Quantum Electronics
  • "Temperature and Noise Dependence of Tri-Mode VCSEL Carried 120-Gbit/s QAM-OFDM Data in Back-to-Back and OM5-MMF Links" (2020) in Journal of Lightwave Technology

Frequent co-authors collaborating with Milton Feng include:

  • Haonan Wu
  • Wenning Fu
  • Chao-Hsin Wu
  • Dufei Wu
  • Yulin He

Their work has appeared in several publication venues with repeated contributions to:

  • IEEE Journal of Quantum Electronics
  • Applied Physics Letters
  • Optics Express
  • IEEE Photonics Technology Letters
  • Photonics Research

Milton Feng has received several awards recognizing their contributions to the field, including:

  • OSA Fellows (2003) for contributions to high speed GaAs MESFET, GaAs HBT and InP HBT optical integrated receivers
  • IEEE David Sarnoff Award (1997) for contributions to the theoretical and experimental understanding of the fundamental speed limitations of MESFETs and HEMTs
  • IEEE Fellow (1992) for contributions to the development of implanted GaAs and InGaAs millimeter-wave MESFET transistors

Best Publications

  • Laser operation of a heterojunction bipolar light-emitting transistor

    G. Walter;N. Holonyak;Milton Feng;R. Chan

  • Room temperature continuous wave operation of a heterojunction bipolar transistor laser

    M. Feng;N. Holonyak;G. Walter;R. Chan

  • Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles

    R. Chan;R. Lesnick;D. Becher;Milton Feng

  • Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

    Milton Feng;N. Holonyak;W. Hafez

  • Quantum-well-base heterojunction bipolar light-emitting transistor

    M. Feng;N. Holonyak;R. Chan

  • High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

    Coskun Kocabas;Simon Dunham;Qing Cao;Kurt Cimino

  • Device technologies for RF front-end circuits in next-generation wireless communications

    M. Feng;Shyh-Chiang Shen;D.C. Caruth;J.-J. Huang

  • Charge control analysis of transistor laser operation

    Milton Feng;N. Holonyak;H. W. Then;G. Walter

  • The transistor laser

    N. Holonyak;M. Feng

  • Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser

    Milton Feng;N. Holonyak;A. James;K. Cimino

  • Nanoliter volume, high-resolution NMR microspectroscopy using a 60-/spl mu/m planar microcoil

    J.E. Stocker;T.L. Peck;A.G. Webb;M. Feng

  • NMR microspectroscopy using 100 /spl mu/m planar RF coils fabricated on gallium arsenide substrates

    T.L. Peck;R.L. Magin;J. Kruse;M. Feng

  • Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz

    Walid Hafez;Milton Feng

  • Hydrogen passivation of C acceptors in high-purity GaAs

    N. Pan;S. S. Bose;M. H. Kim;G. E. Stillman

  • Resonance-free frequency response of a semiconductor laser

    M. Feng;H. W. Then;N. Holonyak;G. Walter

  • Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz

    Shyh-Chiang Shen;M. Feng

  • 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz

    Walid Hafez;William Snodgrass;Milton Feng

  • Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques

    Milton Feng;L. W. Cook;M. M. Tashima;G. E. Stillman

  • InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz

    W. Hafez;Jie Wei Lai;M. Feng

  • 4.3 GHz optical bandwidth light emitting transistor

    G. Walter;C. H. Wu;H. W. Then;Milton Feng

  • Microwave operation and modulation of a transistor laser

    R. Chan;M. Feng;N. Holonyak;G. Walter

Frequent Co-Authors

N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Shun Lien Chuang
Shun Lien Chuang University of Illinois at Urbana-Champaign
Gong-Ru Lin
Gong-Ru Lin National Taiwan University
Haydn Chen
Haydn Chen University of Macau
Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston
H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Peter M. Asbeck
Peter M. Asbeck University of California, San Diego
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students interested in expanding their knowledge beyond Electronics and Electrical Engineering, related fields such as instructional design and training offer promising career opportunities. Pursuing a master's in training and development online allows professionals to develop skills in creating educational programs that complement technical expertise.

Competency-based education is gaining traction as an efficient way to gain relevant skills quickly. Many programs now offer competency based degrees and programs, which focus on mastering specific abilities rather than credit hours. This approach is ideal for working engineers seeking to advance their careers without unnecessary coursework.

Military spouses and dependents often face unique challenges when pursuing higher education. Fortunately, several institutions are recognized as the best online college for military spouses, providing flexible options and supportive environments that accommodate their lifestyles.

Flexibility is critical for many students balancing study with work or other commitments. Online colleges with weekly start dates offer the ability to begin courses at almost any time, making it easier to fit education into busy schedules. Exploring these options can help you find the right pathway to enhance your career in this dynamic field.

Best Scientists Citing Milton Feng

Trending Scientists

Recently Published Articles