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Materials Science

D-Index
72
Citations
22154
World Ranking
3981
National Ranking
1073

Research.com Recognitions

  • 2004 - Von Hippel Award, Materials Research Society
  • 2002 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1988 - Monie A. Ferst Award, Sigma Xi
  • 1984 - Fellow of the American Academy of Arts and Sciences
  • 1973 - Member of the National Academy of Engineering Contributions to development of semiconductor controlled rectifiers, light emitting diodes and diode lasers.

Overview

N. Holonyak is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their work spans multiple areas within semiconductor and materials science, focusing on the development and application of semiconductor devices.

N. Holonyak has been recognized by several scientific societies and institutions for contributions to the field. They have held prominent fellowships and memberships, including:

  • Fellow of the American Association for the Advancement of Science (AAAS), 2002
  • Fellow of the American Academy of Arts and Sciences, 1984
  • Member of the National Academy of Engineering, 1973, cited for contributions to the development of semiconductor controlled rectifiers, light emitting diodes, and diode lasers

Additional awards include:

  • Von Hippel Award from the Materials Research Society, 2004
  • Monie A. Ferst Award from Sigma Xi, 1988

Holonyak's work has contributed to advancements in semiconductor technologies, particularly in light-emitting devices such as LEDs and diode lasers. The citation for the National Academy of Engineering membership references these specific developments, indicating a focus on optoelectronics within semiconductor research.

The absence of recent publication data or frequent coauthors in the available source suggests a research profile centered heavily on foundational and perhaps earlier influential contributions rather than continual recent publication output. This also reflects a science career that is well established and recognized by leading professional organizations.

Best Publications

  • Disorder of an AlAs‐GaAs superlattice by impurity diffusion

    W. D. Laidig;N. Holonyak;M. D. Camras;K. Hess

  • Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices

    Unknown

  • Quantum-well heterostructure lasers

    Unknown

  • Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures

    Unknown

  • Impact ionisation in multilayered heterojunction structures

    R. Chin;N. Holonyak;G.E. Stillman;J.Y. Tang

  • Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion

    D. G. Deppe;L. J. Guido;N. Holonyak;K. C. Hsieh

  • Laser operation of a heterojunction bipolar light-emitting transistor

    G. Walter;N. Holonyak;Milton Feng;R. Chan

  • Disorder of an AlAs‐GaAs superlattice by silicon implantation

    J. J. Coleman;P. D. Dapkus;C. G. Kirkpatrick;M. D. Camras

  • IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

    N. Holonyak;W. D. Laidig;M. D. Camras;J. J. Coleman

  • Room temperature continuous wave operation of a heterojunction bipolar transistor laser

    M. Feng;N. Holonyak;G. Walter;R. Chan

  • Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

    R. D. Dupuis;P. D. Dapkus;Nick Holonyak;E. A. Rezek

  • Carbon diffusion in undoped, n‐type, and p‐type GaAs

    B. T. Cunningham;L. J. Guido;J. E. Baker;J. S. R. Major

  • Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

    Milton Feng;N. Holonyak;W. Hafez

  • Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures

    L. J. Guido;N. Holonyak;K. C. Hsieh;R. W. Kaliski

  • Quantum-well-base heterojunction bipolar light-emitting transistor

    M. Feng;N. Holonyak;R. Chan

  • Effect of Te and S Donor Levels on the Properties of Ga As 1 − x P x near the Direct-Indirect Transition

    M. G. Craford;G. E. Stillman;J. A. Rossi;N. Holonyak

  • Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers

    John Michael Dallesasse;N. Holonyak

  • Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion

    K. Meehan;N. Holonyak;J. M. Brown;M. A. Nixon

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

    R. Chin;N. Holonyak;B. A. Vojak;K. Hess

  • Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion

    M. D. Camras;N. Holonyak;R. D. Burnham;W. Streifer

  • Charge control analysis of transistor laser operation

    Milton Feng;N. Holonyak;H. W. Then;G. Walter

  • Native oxide stabilization of AlAs‐GaAs heterostructures

    A. R. Sugg;N. Holonyak;J. E. Baker;F. A. Kish

  • The transistor laser

    N. Holonyak;M. Feng

  • Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser

    Piotr Konrad Kondratko;Shun-Lien Chuang;Gabriel Walter;Theodore Chung

Frequent Co-Authors

Milton Feng
Milton Feng University of Illinois at Urbana-Champaign
James J. Coleman
James J. Coleman The University of Texas at Dallas
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Dennis G. Deppe
Dennis G. Deppe University of Central Florida
Robert D. Burnham
Robert D. Burnham Xerox (France)
Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas
Donald R. Scifres
Donald R. Scifres SDL Ventures
P.D. Dapkus
P.D. Dapkus University of Southern California
William Streifer
William Streifer Xerox (France)
Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston

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