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D-Index & Metrics

Materials Science

D-Index
72
Citations
22154
World Ranking
3979
National Ranking
1071

N. Holonyak publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where N. Holonyak sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 623 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

N. Holonyak D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where N. Holonyak sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 72 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2004 - Von Hippel Award, Materials Research Society
  • 2002 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1988 - Monie A. Ferst Award, Sigma Xi
  • 1984 - Fellow of the American Academy of Arts and Sciences
  • 1973 - Member of the National Academy of Engineering Contributions to development of semiconductor controlled rectifiers, light emitting diodes and diode lasers.

Overview

N. Holonyak is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their work spans multiple areas within semiconductor and materials science, focusing on the development and application of semiconductor devices.

N. Holonyak has been recognized by several scientific societies and institutions for contributions to the field. They have held prominent fellowships and memberships, including:

  • Fellow of the American Association for the Advancement of Science (AAAS), 2002
  • Fellow of the American Academy of Arts and Sciences, 1984
  • Member of the National Academy of Engineering, 1973, cited for contributions to the development of semiconductor controlled rectifiers, light emitting diodes, and diode lasers

Additional awards include:

  • Von Hippel Award from the Materials Research Society, 2004
  • Monie A. Ferst Award from Sigma Xi, 1988

Holonyak's work has contributed to advancements in semiconductor technologies, particularly in light-emitting devices such as LEDs and diode lasers. The citation for the National Academy of Engineering membership references these specific developments, indicating a focus on optoelectronics within semiconductor research.

The absence of recent publication data or frequent coauthors in the available source suggests a research profile centered heavily on foundational and perhaps earlier influential contributions rather than continual recent publication output. This also reflects a science career that is well established and recognized by leading professional organizations.

Best Publications

  • Disorder of an AlAs‐GaAs superlattice by impurity diffusion

    W. D. Laidig;N. Holonyak;M. D. Camras;K. Hess

  • Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices

    Unknown

  • Quantum-well heterostructure lasers

    Unknown

  • Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures

    Unknown

  • Impact ionisation in multilayered heterojunction structures

    R. Chin;N. Holonyak;G.E. Stillman;J.Y. Tang

  • Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion

    D. G. Deppe;L. J. Guido;N. Holonyak;K. C. Hsieh

  • Laser operation of a heterojunction bipolar light-emitting transistor

    G. Walter;N. Holonyak;Milton Feng;R. Chan

  • Disorder of an AlAs‐GaAs superlattice by silicon implantation

    J. J. Coleman;P. D. Dapkus;C. G. Kirkpatrick;M. D. Camras

  • IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

    N. Holonyak;W. D. Laidig;M. D. Camras;J. J. Coleman

  • Room temperature continuous wave operation of a heterojunction bipolar transistor laser

    M. Feng;N. Holonyak;G. Walter;R. Chan

  • Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

    R. D. Dupuis;P. D. Dapkus;Nick Holonyak;E. A. Rezek

  • Carbon diffusion in undoped, n‐type, and p‐type GaAs

    B. T. Cunningham;L. J. Guido;J. E. Baker;J. S. R. Major

  • Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

    Milton Feng;N. Holonyak;W. Hafez

  • Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures

    L. J. Guido;N. Holonyak;K. C. Hsieh;R. W. Kaliski

  • Quantum-well-base heterojunction bipolar light-emitting transistor

    M. Feng;N. Holonyak;R. Chan

  • Effect of Te and S Donor Levels on the Properties of Ga As 1 − x P x near the Direct-Indirect Transition

    M. G. Craford;G. E. Stillman;J. A. Rossi;N. Holonyak

  • Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers

    John Michael Dallesasse;N. Holonyak

  • Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion

    K. Meehan;N. Holonyak;J. M. Brown;M. A. Nixon

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

    R. Chin;N. Holonyak;B. A. Vojak;K. Hess

  • Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion

    M. D. Camras;N. Holonyak;R. D. Burnham;W. Streifer

  • Charge control analysis of transistor laser operation

    Milton Feng;N. Holonyak;H. W. Then;G. Walter

  • Native oxide stabilization of AlAs‐GaAs heterostructures

    A. R. Sugg;N. Holonyak;J. E. Baker;F. A. Kish

  • The transistor laser

    N. Holonyak;M. Feng

  • Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser

    Piotr Konrad Kondratko;Shun-Lien Chuang;Gabriel Walter;Theodore Chung

Frequent Co-Authors

Milton Feng
Milton Feng University of Illinois at Urbana-Champaign
James J. Coleman
James J. Coleman The University of Texas at Dallas
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Dennis G. Deppe
Dennis G. Deppe University of Central Florida
Robert D. Burnham
Robert D. Burnham Xerox (France)
Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas
Donald R. Scifres
Donald R. Scifres SDL Ventures
P.D. Dapkus
P.D. Dapkus University of Southern California
William Streifer
William Streifer Xerox (France)
Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston

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