World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17911
World Ranking
1136
National Ranking
473

P.D. Dapkus publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where P.D. Dapkus sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 508 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

P.D. Dapkus D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where P.D. Dapkus sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2020 - IEEE Jun-ichi Nishizawa Medal “For the development of metal organic chemical vapor deposition and quantum well lasers.”
  • 2015 - Fellow, National Academy of Inventors
  • 2004 - Member of the National Academy of Engineering For contributions and leadership in the development of materials and technologies for photonic devices.
  • 2003 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2003 - Fellow of American Physical Society (APS) Citation For important contributions to the development of metalorganic chemical vapor deposition and its application to quantum well laser devices
  • 2001 - IEEE David Sarnoff Award “For contributions both to the establishment of MOCVD as a dominant technology for epitaxial materials growth and to the first MOCVD quantum well laser.”
  • 1987 - IEEE Fellow For development of the metalorganic chemical vapor deposition process for the growth of III-V compound semiconductor heterostructures.

Overview

P.D. Dapkus is affiliated with the University of Southern California in the United States. Their research spans multiple fields within engineering, with a focus on Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, Biomedical Engineering, and Surfaces, Coatings and Films.

The scientist's recent publications include the following papers:

  • Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation, 2020, ACS Energy Letters
  • Selective area epitaxy by metalorganic chemical vapor deposition- a tool for photonic and novel nanostructure integration, 2020, Progress in Quantum Electronics

Key research topics covered in their work include:

  • Chalcogenide Semiconductor Thin Films
  • Electrocatalysts for Energy Conversion
  • Nanowire Synthesis and Applications
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Optical Coatings and Gratings

Frequent collaborators in their research are:

  • Maoqing Yao
  • Xin Shen
  • Ke Sun
  • Tianshuo Zhao
  • Yulian He

The scientist's work has been published predominantly in these venues:

  • ACS Energy Letters
  • Progress in Quantum Electronics

Throughout their career, P.D. Dapkus has received numerous awards, among them:

  • IEEE Jun-ichi Nishizawa Medal, 2020, "For the development of metal organic chemical vapor deposition and quantum well lasers."
  • Fellow, National Academy of Inventors, 2015
  • Member of the National Academy of Engineering, 2004, "For contributions and leadership in the development of materials and technologies for photonic devices."
  • Fellow of the American Association for the Advancement of Science (AAAS), 2003
  • Fellow of American Physical Society (APS), 2003, "For important contributions to the development of metalorganic chemical vapor deposition and its application to quantum well laser devices."
  • IEEE David Sarnoff Award, 2001, "For contributions both to the establishment of MOCVD as a dominant technology for epitaxial materials growth and to the first MOCVD quantum well laser."
  • IEEE Fellow, 1987, "For development of the metalorganic chemical vapor deposition process for the growth of III-V compound semiconductor heterostructures."

Best Publications

  • Two-Dimensional Photonic Band-Gap Defect Mode Laser

    Oskar Painter;R. K. Lee;Axel Scherer;A. Yariv

  • Disorder of an AlAs‐GaAs superlattice by impurity diffusion

    W. D. Laidig;N. Holonyak;M. D. Camras;K. Hess

  • Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation

    G.M. Yang;M.H. MacDougal;P.D. Dapkus

  • Quantum-well heterostructure lasers

    Unknown

  • Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography

    R. R. Li;P. D. Dapkus;M. E. Thompson;W. G. Jeong

  • Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires

    Chia-Chi Chang;Chun-Yung Chi;Maoqing Yao;Ningfeng Huang

  • Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP

    O.J. Painter;A. Husain;A. Scherer;J.D. O'Brien

  • GaAs nanowire array solar cells with axial p-i-n junctions.

    Maoqing Yao;Ningfeng Huang;Sen Cong;Chun Yung Chi

  • Disorder of an AlAs‐GaAs superlattice by silicon implantation

    J. J. Coleman;P. D. Dapkus;C. G. Kirkpatrick;M. D. Camras

  • Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD

    S.P. DenBaars;B.Y. Maa;P.D. Dapkus;A.D. Danner

  • IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

    N. Holonyak;W. D. Laidig;M. D. Camras;J. J. Coleman

  • Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

    R. D. Dupuis;P. D. Dapkus;Nick Holonyak;E. A. Rezek

  • Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers

    M.H. MacDougal;H. Zhao;P.D. Dapkus;M. Ziari

  • Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors

    M.H. MacDougal;P.D. Dapkus;V. Pudikov;Hanmin Zhao

  • Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers

    Y. Zou;J.S. Osinski;P. Grodzinski;P.D. Dapkus

  • Microdisk lasers vertically coupled to output waveguides

    Seung June Choi;K. Djordjev;Sang Jun Choi;P.D. Dapkus

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    Maoqing Yao;Sen Cong;Shermin Arab;Ningfeng Huang

  • Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

    R. Chin;N. Holonyak;B. A. Vojak;K. Hess

  • Vertical resonant couplers with precise coupling efficiency control fabricated by wafer bonding

    D.V. Tishinin;P.D. Dapkus;A.E. Bond;I. Kim

  • Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

    Unknown

  • Lithographic tuning of a two-dimensional photonic crystal laser array

    O. Painter;A. Husain;A. Scherer;P.T. Lee

  • Extended tuning range in sampled grating DBR lasers

    V. Jayaraman;A. Mathur;L.A. Coldren;P.D. Dapkus

  • High‐energy (Visible‐red) stimulated emission in GaAs

    B. A. Vojak;W. D. Laidig;N. Holonyak;M. D. Camras

  • Design and fabrication of VCSELs with Al/sub x/O/sub y/-GaAs DBRs

    M.H. MacDougal;P.D. Dapkus;A.E. Bond;Chao-Kun Lin

  • GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

    S. P. DenBaars;C. A. Beyler;A. Hariz;P. D. Dapkus

Frequent Co-Authors

N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
James J. Coleman
James J. Coleman The University of Texas at Dallas
William H. Steier
William H. Steier University of Southern California
Piotr Grodzinski
Piotr Grodzinski National Institutes of Health
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Xiang Zhang
Xiang Zhang University of Hong Kong
Martin A. Gundersen
Martin A. Gundersen University of Southern California
Axel Scherer
Axel Scherer California Institute of Technology
Harold R. Fetterman
Harold R. Fetterman University of California, Los Angeles
Oskar Painter
Oskar Painter California Institute of Technology

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