World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17911
World Ranking
1136
National Ranking
472

Research.com Recognitions

  • 2020 - IEEE Jun-ichi Nishizawa Medal “For the development of metal organic chemical vapor deposition and quantum well lasers.”
  • 2015 - Fellow, National Academy of Inventors
  • 2004 - Member of the National Academy of Engineering For contributions and leadership in the development of materials and technologies for photonic devices.
  • 2003 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2003 - Fellow of American Physical Society (APS) Citation For important contributions to the development of metalorganic chemical vapor deposition and its application to quantum well laser devices
  • 2001 - IEEE David Sarnoff Award “For contributions both to the establishment of MOCVD as a dominant technology for epitaxial materials growth and to the first MOCVD quantum well laser.”
  • 1987 - IEEE Fellow For development of the metalorganic chemical vapor deposition process for the growth of III-V compound semiconductor heterostructures.

Overview

P.D. Dapkus is affiliated with the University of Southern California in the United States. Their research spans multiple fields within engineering, with a focus on Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, Biomedical Engineering, and Surfaces, Coatings and Films.

The scientist's recent publications include the following papers:

  • Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation, 2020, ACS Energy Letters
  • Selective area epitaxy by metalorganic chemical vapor deposition- a tool for photonic and novel nanostructure integration, 2020, Progress in Quantum Electronics

Key research topics covered in their work include:

  • Chalcogenide Semiconductor Thin Films
  • Electrocatalysts for Energy Conversion
  • Nanowire Synthesis and Applications
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Optical Coatings and Gratings

Frequent collaborators in their research are:

  • Maoqing Yao
  • Xin Shen
  • Ke Sun
  • Tianshuo Zhao
  • Yulian He

The scientist's work has been published predominantly in these venues:

  • ACS Energy Letters
  • Progress in Quantum Electronics

Throughout their career, P.D. Dapkus has received numerous awards, among them:

  • IEEE Jun-ichi Nishizawa Medal, 2020, "For the development of metal organic chemical vapor deposition and quantum well lasers."
  • Fellow, National Academy of Inventors, 2015
  • Member of the National Academy of Engineering, 2004, "For contributions and leadership in the development of materials and technologies for photonic devices."
  • Fellow of the American Association for the Advancement of Science (AAAS), 2003
  • Fellow of American Physical Society (APS), 2003, "For important contributions to the development of metalorganic chemical vapor deposition and its application to quantum well laser devices."
  • IEEE David Sarnoff Award, 2001, "For contributions both to the establishment of MOCVD as a dominant technology for epitaxial materials growth and to the first MOCVD quantum well laser."
  • IEEE Fellow, 1987, "For development of the metalorganic chemical vapor deposition process for the growth of III-V compound semiconductor heterostructures."

Best Publications

  • Two-Dimensional Photonic Band-Gap Defect Mode Laser

    Oskar Painter;R. K. Lee;Axel Scherer;A. Yariv

  • Disorder of an AlAs‐GaAs superlattice by impurity diffusion

    W. D. Laidig;N. Holonyak;M. D. Camras;K. Hess

  • Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation

    G.M. Yang;M.H. MacDougal;P.D. Dapkus

  • Quantum-well heterostructure lasers

    Unknown

  • Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography

    R. R. Li;P. D. Dapkus;M. E. Thompson;W. G. Jeong

  • Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires

    Chia-Chi Chang;Chun-Yung Chi;Maoqing Yao;Ningfeng Huang

  • Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP

    O.J. Painter;A. Husain;A. Scherer;J.D. O'Brien

  • GaAs nanowire array solar cells with axial p-i-n junctions.

    Maoqing Yao;Ningfeng Huang;Sen Cong;Chun Yung Chi

  • Disorder of an AlAs‐GaAs superlattice by silicon implantation

    J. J. Coleman;P. D. Dapkus;C. G. Kirkpatrick;M. D. Camras

  • Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD

    S.P. DenBaars;B.Y. Maa;P.D. Dapkus;A.D. Danner

  • IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

    N. Holonyak;W. D. Laidig;M. D. Camras;J. J. Coleman

  • Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

    R. D. Dupuis;P. D. Dapkus;Nick Holonyak;E. A. Rezek

  • Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers

    M.H. MacDougal;H. Zhao;P.D. Dapkus;M. Ziari

  • Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors

    M.H. MacDougal;P.D. Dapkus;V. Pudikov;Hanmin Zhao

  • Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers

    Y. Zou;J.S. Osinski;P. Grodzinski;P.D. Dapkus

  • Microdisk lasers vertically coupled to output waveguides

    Seung June Choi;K. Djordjev;Sang Jun Choi;P.D. Dapkus

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    Maoqing Yao;Sen Cong;Shermin Arab;Ningfeng Huang

  • Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

    R. Chin;N. Holonyak;B. A. Vojak;K. Hess

  • Vertical resonant couplers with precise coupling efficiency control fabricated by wafer bonding

    D.V. Tishinin;P.D. Dapkus;A.E. Bond;I. Kim

  • Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

    Unknown

  • Lithographic tuning of a two-dimensional photonic crystal laser array

    O. Painter;A. Husain;A. Scherer;P.T. Lee

  • Extended tuning range in sampled grating DBR lasers

    V. Jayaraman;A. Mathur;L.A. Coldren;P.D. Dapkus

  • High‐energy (Visible‐red) stimulated emission in GaAs

    B. A. Vojak;W. D. Laidig;N. Holonyak;M. D. Camras

  • Design and fabrication of VCSELs with Al/sub x/O/sub y/-GaAs DBRs

    M.H. MacDougal;P.D. Dapkus;A.E. Bond;Chao-Kun Lin

  • GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

    S. P. DenBaars;C. A. Beyler;A. Hariz;P. D. Dapkus

Frequent Co-Authors

N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
James J. Coleman
James J. Coleman The University of Texas at Dallas
William H. Steier
William H. Steier University of Southern California
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Martin A. Gundersen
Martin A. Gundersen University of Southern California
Axel Scherer
Axel Scherer California Institute of Technology
Harold R. Fetterman
Harold R. Fetterman University of California, Los Angeles
A. F. J. Levi
A. F. J. Levi University of Southern California
Amnon Yariv
Amnon Yariv California Institute of Technology
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara

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