World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
10447
World Ranking
2420
National Ranking
934

Materials Science

D-Index
54
Citations
10978
World Ranking
8876
National Ranking
2172

Overview

James J. Coleman is affiliated with The University of Texas at Dallas in the United States. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a particular focus on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics.

Their work covers several main topics in photonics and related technologies. These include:

  • Photonic and Optical Devices
  • Advanced Fiber Laser Technologies
  • Advanced Fiber Optic Sensors
  • Photonic Crystals and Applications
  • Semiconductor Lasers and Optical Devices

James J. Coleman has authored publications in notable venues including:

  • Optics Express
  • IEEE Journal of Quantum Electronics

Noteworthy recent papers authored or co-authored by Coleman are:

  • Polarization-independent one-dimensional grating coupler design on hybrid silicon/LNOI platform, 2020, Optics Express
  • Scaling Challenges in High Power Photonic Crystal Surface-Emitting Lasers, 2022, IEEE Journal of Quantum Electronics

Frequently collaborating with other researchers, Coleman has worked with:

  • Weidong Zhou
  • Xinyu Ma
  • Chijie Zhuang
  • Rong Zeng
  • Akhil Kalapala

Best Publications

  • Disorder of an AlAs‐GaAs superlattice by impurity diffusion

    W. D. Laidig;N. Holonyak;M. D. Camras;K. Hess

  • GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

    Jongseung Yoon;Sungjin Jo;Sungjin Jo;Ik Su Chun;Inhwa Jung

  • Disorder of an AlAs‐GaAs superlattice by silicon implantation

    J. J. Coleman;P. D. Dapkus;C. G. Kirkpatrick;M. D. Camras

  • IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

    N. Holonyak;W. D. Laidig;M. D. Camras;J. J. Coleman

  • Microdisk lasers vertically coupled to output waveguides

    Seung June Choi;K. Djordjev;Sang Jun Choi;P.D. Dapkus

  • Epitaxial growth of three-dimensionally architectured optoelectronic devices

    Erik C. Nelson;Neville L. Dias;Kevin P. Bassett;Simon N. Dunham

  • Semiconductor quantum dots

    Weidong Zhou;James J. Coleman

  • Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness

    K. J. Beernink;P. K. York;J. J. Coleman;R. G. Waters

  • Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

    S. Kim;S. J. Rhee;D. A. Turnbull;Xiuling Li

  • The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

    X. Li;S. Kim;E. E. Reuter;S. G. Bishop

  • Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

    S. Kim;S. J. Rhee;D. A. Turnbull;E. E. Reuter

  • Two-dimensional transient simulation of an idealized high electron mobility transistor

    D.J. Widiger;I.C. Kizilyalli;K. Hess;J.J. Coleman

  • Implantation disordering of AlxGa1−xAs superlattices

    P. Gavrilovic;D. G. Deppe;K. Meehan;N. Holonyak

  • New ultrafast switching mechanism in semiconductor heterostructures

    K. Hess;T. K. Higman;M. A. Emanuel;J. J. Coleman

  • Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained-layer quantum well lasers

    W. Rideout;B. Yu;J. LaCourse;P. K York

  • High‐energy (Visible‐red) stimulated emission in GaAs

    B. A. Vojak;W. D. Laidig;N. Holonyak;M. D. Camras

  • InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

    P. K. York;K. J. Beernink;G. E. Fernández;J. J. Coleman

  • A distributed feedback ridge waveguide quantum well heterostructure laser

    L.M. Miller;J.T. Verdeyen;J.J. Coleman;R.P. Bryan

  • Alloy Clustering in Al x Ga 1-x As-GaAs Quantum-Well Heterostructures

    N. Holonyak;W. D. Laidig;B. A. Vojak;K. Hess

  • Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

    S. Kim;S. J. Rhee;Xiuling Li;J. J. Coleman

Frequent Co-Authors

N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Xiuling Li
Xiuling Li University of Illinois at Urbana-Champaign
P.D. Dapkus
P.D. Dapkus University of Southern California
Robert S Averback
Robert S Averback University of Illinois at Urbana-Champaign
Ian M. Robertson
Ian M. Robertson University of Wisconsin–Madison
Xiaochun Li
Xiaochun Li University of California, Los Angeles
Kent D. Choquette
Kent D. Choquette University of Illinois at Urbana-Champaign
Robert P. H. Chang
Robert P. H. Chang Northwestern University
Richard P. Mirin
Richard P. Mirin National Institute of Standards and Technology
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign

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