James J. Coleman mostly deals with Optoelectronics, Quantum well, Heterojunction, Laser and Semiconductor laser theory. His research integrates issues of Semiconductor device and Epitaxy in his study of Optoelectronics. The concepts of his Quantum well study are interwoven with issues in Spontaneous emission, Gallium arsenide, Thin film, Refractive index and Transient.
His Heterojunction study is concerned with Condensed matter physics in general. His studies in Laser integrate themes in fields like Range and Electroluminescence. His research in Semiconductor laser theory intersects with topics in Threshold energy, Electric current and Quantum efficiency.
James J. Coleman focuses on Optoelectronics, Laser, Quantum well, Semiconductor laser theory and Heterojunction. James J. Coleman interconnects Metalorganic vapour phase epitaxy and Optics in the investigation of issues within Optoelectronics. His Laser research is multidisciplinary, incorporating perspectives in Wavelength and Diode.
His Quantum well research includes themes of Quantum well laser, Condensed matter physics and Semiconductor. His Semiconductor laser theory research is multidisciplinary, incorporating elements of Spontaneous emission, Semiconductor device, Waveguide, Lasing threshold and Quantum efficiency. His Heterojunction study combines topics from a wide range of disciplines, such as Quantum heterostructure and Atomic physics.
James J. Coleman spends much of his time researching Optoelectronics, Laser, Quantum dot, Semiconductor laser theory and Quantum dot laser. In his research, Nanolithography is intimately related to Quantum well, which falls under the overarching field of Optoelectronics. His work deals with themes such as Quantization and Diode, which intersect with Laser.
The Quantum dot study combines topics in areas such as Etching, Condensed matter physics, Electron-beam lithography and Nanophotonics. His Semiconductor laser theory research incorporates themes from Photonics, Photonic integrated circuit and Lasing threshold. His study in Quantum dot laser is interdisciplinary in nature, drawing from both Ultrashort pulse, Selective area epitaxy, Measure and Gallium arsenide.
His primary areas of study are Optoelectronics, Laser, Optics, Quantum dot and Semiconductor laser theory. His Optoelectronics study integrates concerns from other disciplines, such as Quantum well and Etching, Isotropic etching. His Laser research includes elements of Diode and Active layer.
His work in the fields of Laser linewidth, Distributed Bragg reflector laser, Distributed Bragg reflector and Cladding overlaps with other areas such as Laser beam quality. His Quantum dot research is multidisciplinary, relying on both Electron-beam lithography and Quantum dot laser. His biological study spans a wide range of topics, including Photovoltaics and Epitaxy.
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Disorder of an AlAs‐GaAs superlattice by impurity diffusion
W. D. Laidig;N. Holonyak;M. D. Camras;K. Hess.
Applied Physics Letters (1981)
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies
Jongseung Yoon;Sungjin Jo;Sungjin Jo;Ik Su Chun;Inhwa Jung.
Nature (2010)
Disorder of an AlAs‐GaAs superlattice by silicon implantation
J. J. Coleman;P. D. Dapkus;C. G. Kirkpatrick;M. D. Camras.
Applied Physics Letters (1982)
IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity
N. Holonyak;W. D. Laidig;M. D. Camras;J. J. Coleman.
Applied Physics Letters (1981)
Epitaxial growth of three-dimensionally architectured optoelectronic devices
Erik C. Nelson;Neville L. Dias;Kevin P. Bassett;Simon N. Dunham.
Nature Materials (2011)
Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness
K. J. Beernink;P. K. York;J. J. Coleman;R. G. Waters.
Applied Physics Letters (1989)
Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN
S. Kim;S. J. Rhee;D. A. Turnbull;Xiuling Li.
Applied Physics Letters (1997)
The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
X. Li;S. Kim;E. E. Reuter;S. G. Bishop.
Applied Physics Letters (1998)
Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy
S. Kim;S. J. Rhee;D. A. Turnbull;E. E. Reuter.
Applied Physics Letters (1997)
Two-dimensional transient simulation of an idealized high electron mobility transistor
D.J. Widiger;I.C. Kizilyalli;K. Hess;J.J. Coleman.
IEEE Transactions on Electron Devices (1985)
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