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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
17595
World Ranking
926
National Ranking
387

Materials Science

D-Index
70
Citations
17815
World Ranking
4420
National Ranking
1181

Research.com Recognitions

  • 2010 - Fellow of the Materials Research Society
  • 2006 - Member of the National Academy of Engineering For contributions to the nanometer-scale processing of semiconductor structures and applications in high performance electronic and optoelectronic devices.
  • 2005 - OSA Fellows For contributions to high-sensitivity optoelectronic devices and integrated circuits and the methods for their fabrication
  • 2003 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1999 - IEEE Fellow For contributions to compound semiconductor devices and circuits.

Overview

Ilesanmi Adesida is a researcher affiliated with the University of Illinois at Urbana-Champaign in the United States. Their work centers on semiconductor devices and electronic materials, contributing to both academic research and applications in high-performance electronic and optoelectronic devices.

Adesida has been involved in recent publications including a paper titled IEEE ELECTRON DEVICES SOCIETY, published in 2024 in the IEEE Transactions on Electron Devices. This publication highlights ongoing research activity in the field of electron devices.

Frequent collaborators in Adesida's research include:

  • B. Zhao
  • R Todi
  • A Past
  • Sr Guarin
  • M Past

The main venue for their scholarly articles is the IEEE Transactions on Electron Devices, indicating a focus on electronics and semiconductor technology in reputable outlets.

Throughout their career, Adesida has received several professional recognitions. These include:

  • Fellow of the Materials Research Society in 2010
  • Member of the National Academy of Engineering (2006) for contributions to nanometer-scale processing of semiconductor structures and their applications in electronic and optoelectronic devices
  • Fellow of the American Association for the Advancement of Science (AAAS) in 2003
  • IEEE Fellow in 1999 for contributions to compound semiconductor devices and circuits

These honors reflect ongoing engagement with advancements in semiconductor processing and device development.

Best Publications

  • Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

    Ralph G. Nuzzo;John A. Rogers;Etienne Menard;Keon Jae Lee

  • Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

    W.B. Lanford;T. Tanaka;Y. Otoki;I. Adesida

  • Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

    C. Youtsey;L. T. Romano;Ilesanmi Adesida

  • AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

    V. Kumar;W. Lu;R. Schwindt;A. Kuliev

  • AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

    Wu Lu;Jinwei Yang;M.A. Khan;I. Adesida

  • Highly anisotropic photoenhanced wet etching of n-type GaN

    C. Youtsey;I. Adesida;G. Bulman

  • Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

    I. Adesida;A. Mahajan;E. Andideh;M. Asif Khan

  • Schottky barrier properties of various metals on n-type GaN

    A C Schmitz;A T Ping;M Asif Khan;Q Chen

  • Metal contacts to n-type GaN

    A. C. Schmitz;A. T. Ping;M. Asif Khan;Q. Chen

  • Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN

    V. Kumar;L. Zhou;D. Selvanathan;Ilesanmi Adesida

  • Smooth n-type GaN surfaces by photoenhanced wet etching

    C. Youtsey;Ilesanmi Adesida;L. T. Romano;G. Bulman

  • A comparative study of surface passivation on AlGaN/GaN HEMTs

    W Lu;V Kumar;R Schwindt;E Piner

  • High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

    V. Kumar;A. Kuliev;T. Tanaka;Y. Otoki

  • Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates†

    Yugang Sun;Yugang Sun;Vipan Kumar;Ilesanmi Adesida;John A. Rogers

  • Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

    C. Youtsey;L. T. Romano;R. J. Molnar;Ilesanmi Adesida

  • DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

    A.T. Ping;Q. Chen;J.W. Yang;M.A. Khan

  • Characteristics of chemically assisted ion beam etching of gallium nitride

    Ilesanmi Adesida;A. T. Ping;C. Youtsey;T. Dow

  • Radiolysis and resolution limits of inorganic halide resists

    A. Muray;M. Scheinfein;M. Isaacson;I. Adesida

  • The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN

    A. T. Ping;Q. Chen;J. W. Yang;M. Asif Khan

  • Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers

    Liang Wang;Fitih M. Mohammed;Ilesanmi Adesida

  • Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer

    Han Ki Kim;Kyoung Kook Kim;Seong Ju Park;Tae Yeon Seong

Frequent Co-Authors

Jae-Hyung Jang
Jae-Hyung Jang Korea Institute of Energy Technology
C. Caneau
C. Caneau Corning (United States)
Patrick Fay
Patrick Fay University of Notre Dame
Rajaram Bhat
Rajaram Bhat Corning (United States)
M. Asif Khan
M. Asif Khan University of South Carolina
Wu Lu
Wu Lu The Ohio State University
Paul W. Bohn
Paul W. Bohn University of Notre Dame
Tae Yeon Seong
Tae Yeon Seong Korea University
Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Dong-Hyun Kim
Dong-Hyun Kim Kyung Hee University

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