2010 - Fellow of the Materials Research Society
2006 - Member of the National Academy of Engineering For contributions to the nanometer-scale processing of semiconductor structures and applications in high performance electronic and optoelectronic devices.
2003 - Fellow of the American Association for the Advancement of Science (AAAS)
1999 - IEEE Fellow For contributions to compound semiconductor devices and circuits.
Ilesanmi Adesida mostly deals with Optoelectronics, Analytical chemistry, Heterojunction, Transistor and Etching. His study in Optoelectronics is interdisciplinary in nature, drawing from both Transconductance and Microwave. His biological study spans a wide range of topics, including Crystallographic defect, Breakdown voltage, Reactive-ion etching and Scanning electron microscope.
His Heterojunction research includes elements of Field-effect transistor, Ohmic contact and Annealing. His research integrates issues of Flexible electronics and Gallium arsenide in his study of Transistor. His Etching study combines topics from a wide range of disciplines, such as Whiskers and Arc lamp.
Ilesanmi Adesida focuses on Optoelectronics, Heterojunction, Transistor, Analytical chemistry and High-electron-mobility transistor. The concepts of his Optoelectronics study are interwoven with issues in Field-effect transistor, Transconductance and Etching. Ilesanmi Adesida combines subjects such as Electron mobility, Photodiode and Epitaxy with his study of Heterojunction.
Ilesanmi Adesida has included themes like Current density, Gallium nitride and Power density in his Transistor study. His Analytical chemistry research includes themes of Ohmic contact, Reactive-ion etching and Contact resistance. His High-electron-mobility transistor study combines topics in areas such as Molecular beam epitaxy and Amplifier.
Ilesanmi Adesida mostly deals with Optoelectronics, Ohmic contact, Transistor, High-electron-mobility transistor and Annealing. In his research on the topic of Optoelectronics, Field-effect transistor is strongly related with Gallium nitride. He has researched Ohmic contact in several fields, including Analytical chemistry, Aluminium, Intermetallic and Contact resistance.
His work deals with themes such as Flexible electronics, Power density and Electronics, which intersect with Transistor. His High-electron-mobility transistor research is multidisciplinary, incorporating elements of Gallium arsenide, Metallizing, Molecular beam epitaxy, Cutoff frequency and Electronic engineering. The Annealing study which covers Schottky barrier that intersects with Schottky diode and Thin film.
His primary areas of study are Optoelectronics, Ohmic contact, Heterojunction, Analytical chemistry and Annealing. His research on Optoelectronics focuses in particular on Schottky diode. His Ohmic contact research is multidisciplinary, relying on both Wide-bandgap semiconductor, Microstructure, Intermetallic and Contact resistance.
His Heterojunction research includes elements of Barrier layer, Quantum tunnelling, Schottky barrier and Electrical engineering. His biological study spans a wide range of topics, including Isopropyl alcohol, Reactive-ion etching and Dry etching. His research in Annealing intersects with topics in Transmission electron microscopy and Tin.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
W.B. Lanford;T. Tanaka;Y. Otoki;I. Adesida.
Electronics Letters (2005)
Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
W.B. Lanford;T. Tanaka;Y. Otoki;I. Adesida.
Electronics Letters (2005)
Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations
C. Youtsey;L. T. Romano;Ilesanmi Adesida.
Applied Physics Letters (1998)
Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations
C. Youtsey;L. T. Romano;Ilesanmi Adesida.
Applied Physics Letters (1998)
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise
Wu Lu;Jinwei Yang;M.A. Khan;I. Adesida.
IEEE Transactions on Electron Devices (2001)
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise
Wu Lu;Jinwei Yang;M.A. Khan;I. Adesida.
IEEE Transactions on Electron Devices (2001)
Highly anisotropic photoenhanced wet etching of n-type GaN
C. Youtsey;I. Adesida;G. Bulman.
Applied Physics Letters (1997)
Highly anisotropic photoenhanced wet etching of n-type GaN
C. Youtsey;I. Adesida;G. Bulman.
Applied Physics Letters (1997)
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
V. Kumar;W. Lu;R. Schwindt;A. Kuliev.
IEEE Electron Device Letters (2002)
Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)
I. Adesida;A. Mahajan;E. Andideh;M. Asif Khan.
Applied Physics Letters (1993)
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