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Ilesanmi Adesida

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 70 926 884 388 357 480 17595
Materials Science 70 4418 4274 1179 1109 488 17815

Ilesanmi Adesida publications per year

The chart shows the history of publications by Ilesanmi Adesida between 1978 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Ilesanmi Adesida published across 44 years, from 1978 to 2021, averaging 11.3 papers a year. Output peaked at 38 publications in 1997. 1 of the 497 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1978 to 2021. Vertical axis: number of publications, 0 to 38. Peak 38 publications in 1997. 1978: 2 publications 1979: 1 publication 1980: 4 publications 1981: 3 publications 1982: 3 publications 1983: 16 publications 1984: 7 publications 1985: 5 publications 1986: 0 publications 1987: 0 publications 1988: 1 publication 1989: 8 publications 1990: 10 publications 1991: 11 publications 1992: 17 publications 1993: 25 publications 1994: 22 publications 1995: 15 publications 1996: 34 publications 1997: 38 publications 1998: 24 publications 1999: 19 publications 2000: 18 publications 2001: 19 publications 2002: 27 publications 2003: 25 publications 2004: 20 publications 2005: 29 publications 2006: 36 publications 2007: 18 publications 2008: 16 publications 2009: 11 publications 2010: 5 publications 2011: 2 publications 2012: 0 publications 2013: 2 publications 2014: 1 publication 2015: 1 publication 2016: 1 publication 2017: 0 publications 2018: 0 publications 2019: 0 publications 2020: 0 publications 2021: 1 publication
1978 2021

497 publications in total across all disciplines

View publications per year as a table
Ilesanmi Adesida: publications per year, 1978 to 2021
Year Publications
1978 2
1979 1
1980 4
1981 3
1982 3
1983 16
1984 7
1985 5
1986 0
1987 0
1988 1
1989 8
1990 10
1991 11
1992 17
1993 25
1994 22
1995 15
1996 34
1997 38
1998 24
1999 19
2000 18
2001 19
2002 27
2003 25
2004 20
2005 29
2006 36
2007 18
2008 16
2009 11
2010 5
2011 2
2012 0
2013 2
2014 1
2015 1
2016 1
2017 0
2018 0
2019 0
2020 0
2021 1
Total 497
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Ilesanmi Adesida publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ilesanmi Adesida sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 474–493 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 480 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117 480
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Ilesanmi Adesida D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ilesanmi Adesida sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 70 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 70 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57 70
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2010 - Fellow of the Materials Research Society
  • 2006 - Member of the National Academy of Engineering For contributions to the nanometer-scale processing of semiconductor structures and applications in high performance electronic and optoelectronic devices.
  • 2005 - OSA Fellows For contributions to high-sensitivity optoelectronic devices and integrated circuits and the methods for their fabrication
  • 2003 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1999 - IEEE Fellow For contributions to compound semiconductor devices and circuits.

Overview

Ilesanmi Adesida is a researcher affiliated with the University of Illinois at Urbana-Champaign in the United States. Their work centers on semiconductor devices and electronic materials, contributing to both academic research and applications in high-performance electronic and optoelectronic devices.

Adesida has been involved in recent publications including a paper titled IEEE ELECTRON DEVICES SOCIETY, published in 2024 in the IEEE Transactions on Electron Devices. This publication highlights ongoing research activity in the field of electron devices.

Frequent collaborators in Adesida's research include:

  • B. Zhao
  • R Todi
  • A Past
  • Sr Guarin
  • M Past

The main venue for their scholarly articles is the IEEE Transactions on Electron Devices, indicating a focus on electronics and semiconductor technology in reputable outlets.

Throughout their career, Adesida has received several professional recognitions. These include:

  • Fellow of the Materials Research Society in 2010
  • Member of the National Academy of Engineering (2006) for contributions to nanometer-scale processing of semiconductor structures and their applications in electronic and optoelectronic devices
  • Fellow of the American Association for the Advancement of Science (AAAS) in 2003
  • IEEE Fellow in 1999 for contributions to compound semiconductor devices and circuits

These honors reflect ongoing engagement with advancements in semiconductor processing and device development.

Best Publications

  • Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

    Ralph G. Nuzzo;John A. Rogers;Etienne Menard;Keon Jae Lee

  • Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

    W.B. Lanford;T. Tanaka;Y. Otoki;I. Adesida

  • Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

    C. Youtsey;L. T. Romano;Ilesanmi Adesida

  • AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

    V. Kumar;W. Lu;R. Schwindt;A. Kuliev

  • AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

    Wu Lu;Jinwei Yang;M.A. Khan;I. Adesida

  • Highly anisotropic photoenhanced wet etching of n-type GaN

    C. Youtsey;I. Adesida;G. Bulman

  • Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

    I. Adesida;A. Mahajan;E. Andideh;M. Asif Khan

  • Schottky barrier properties of various metals on n-type GaN

    A C Schmitz;A T Ping;M Asif Khan;Q Chen

  • Metal contacts to n-type GaN

    A. C. Schmitz;A. T. Ping;M. Asif Khan;Q. Chen

  • Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN

    V. Kumar;L. Zhou;D. Selvanathan;Ilesanmi Adesida

  • Smooth n-type GaN surfaces by photoenhanced wet etching

    C. Youtsey;Ilesanmi Adesida;L. T. Romano;G. Bulman

  • A comparative study of surface passivation on AlGaN/GaN HEMTs

    W Lu;V Kumar;R Schwindt;E Piner

  • High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

    V. Kumar;A. Kuliev;T. Tanaka;Y. Otoki

  • Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates†

    Yugang Sun;Yugang Sun;Vipan Kumar;Ilesanmi Adesida;John A. Rogers

  • Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

    C. Youtsey;L. T. Romano;R. J. Molnar;Ilesanmi Adesida

  • DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

    A.T. Ping;Q. Chen;J.W. Yang;M.A. Khan

  • Characteristics of chemically assisted ion beam etching of gallium nitride

    Ilesanmi Adesida;A. T. Ping;C. Youtsey;T. Dow

  • Radiolysis and resolution limits of inorganic halide resists

    A. Muray;M. Scheinfein;M. Isaacson;I. Adesida

  • The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN

    A. T. Ping;Q. Chen;J. W. Yang;M. Asif Khan

  • Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers

    Liang Wang;Fitih M. Mohammed;Ilesanmi Adesida

  • Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer

    Han Ki Kim;Kyoung Kook Kim;Seong Ju Park;Tae Yeon Seong

Frequent Co-Authors

Jae-Hyung Jang
Jae-Hyung Jang Korea Institute of Energy Technology
C. Caneau
C. Caneau Corning (United States)
Patrick Fay
Patrick Fay University of Notre Dame
Rajaram Bhat
Rajaram Bhat Corning (United States)
M. Asif Khan
M. Asif Khan University of South Carolina
Wu Lu
Wu Lu The Ohio State University
Paul W. Bohn
Paul W. Bohn University of Notre Dame
Tae Yeon Seong
Tae Yeon Seong Korea University
Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Dong-Hyun Kim
Dong-Hyun Kim Kyung Hee University

External Links

Wikipedia of Ilesanmi Adesida Personal website of Ilesanmi Adesida Google Scholar page

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