D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 57 Citations 10,281 312 World Ranking 3902 National Ranking 1122
Electronics and Electrical Engineering D-index 56 Citations 9,977 360 World Ranking 1284 National Ranking 586

Research.com Recognitions

Awards & Achievements

2010 - Fellow of the Materials Research Society

2006 - Member of the National Academy of Engineering For contributions to the nanometer-scale processing of semiconductor structures and applications in high performance electronic and optoelectronic devices.

2003 - Fellow of the American Association for the Advancement of Science (AAAS)

1999 - IEEE Fellow For contributions to compound semiconductor devices and circuits.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Ilesanmi Adesida mostly deals with Optoelectronics, Analytical chemistry, Heterojunction, Transistor and Etching. His study in Optoelectronics is interdisciplinary in nature, drawing from both Transconductance and Microwave. His biological study spans a wide range of topics, including Crystallographic defect, Breakdown voltage, Reactive-ion etching and Scanning electron microscope.

His Heterojunction research includes elements of Field-effect transistor, Ohmic contact and Annealing. His research integrates issues of Flexible electronics and Gallium arsenide in his study of Transistor. His Etching study combines topics from a wide range of disciplines, such as Whiskers and Arc lamp.

His most cited work include:

  • AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise (231 citations)
  • Recessed-gate enhancement-mode GaN HEMT with high threshold voltage (222 citations)
  • Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations (209 citations)

What are the main themes of his work throughout his whole career to date?

Ilesanmi Adesida focuses on Optoelectronics, Heterojunction, Transistor, Analytical chemistry and High-electron-mobility transistor. The concepts of his Optoelectronics study are interwoven with issues in Field-effect transistor, Transconductance and Etching. Ilesanmi Adesida combines subjects such as Electron mobility, Photodiode and Epitaxy with his study of Heterojunction.

Ilesanmi Adesida has included themes like Current density, Gallium nitride and Power density in his Transistor study. His Analytical chemistry research includes themes of Ohmic contact, Reactive-ion etching and Contact resistance. His High-electron-mobility transistor study combines topics in areas such as Molecular beam epitaxy and Amplifier.

He most often published in these fields:

  • Optoelectronics (68.19%)
  • Heterojunction (20.00%)
  • Transistor (19.76%)

What were the highlights of his more recent work (between 2004-2016)?

  • Optoelectronics (68.19%)
  • Ohmic contact (12.53%)
  • Transistor (19.76%)

In recent papers he was focusing on the following fields of study:

Ilesanmi Adesida mostly deals with Optoelectronics, Ohmic contact, Transistor, High-electron-mobility transistor and Annealing. In his research on the topic of Optoelectronics, Field-effect transistor is strongly related with Gallium nitride. He has researched Ohmic contact in several fields, including Analytical chemistry, Aluminium, Intermetallic and Contact resistance.

His work deals with themes such as Flexible electronics, Power density and Electronics, which intersect with Transistor. His High-electron-mobility transistor research is multidisciplinary, incorporating elements of Gallium arsenide, Metallizing, Molecular beam epitaxy, Cutoff frequency and Electronic engineering. The Annealing study which covers Schottky barrier that intersects with Schottky diode and Thin film.

Between 2004 and 2016, his most popular works were:

  • Recessed-gate enhancement-mode GaN HEMT with high threshold voltage (222 citations)
  • Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates† (145 citations)
  • Bendable GaN high electron mobility transistors on plastic substrates (103 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary areas of study are Optoelectronics, Ohmic contact, Heterojunction, Analytical chemistry and Annealing. His research on Optoelectronics focuses in particular on Schottky diode. His Ohmic contact research is multidisciplinary, relying on both Wide-bandgap semiconductor, Microstructure, Intermetallic and Contact resistance.

His Heterojunction research includes elements of Barrier layer, Quantum tunnelling, Schottky barrier and Electrical engineering. His biological study spans a wide range of topics, including Isopropyl alcohol, Reactive-ion etching and Dry etching. His research in Annealing intersects with topics in Transmission electron microscopy and Tin.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W.B. Lanford;T. Tanaka;Y. Otoki;I. Adesida.
Electronics Letters (2005)

325 Citations

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

W.B. Lanford;T. Tanaka;Y. Otoki;I. Adesida.
Electronics Letters (2005)

325 Citations

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey;L. T. Romano;Ilesanmi Adesida.
Applied Physics Letters (1998)

315 Citations

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey;L. T. Romano;Ilesanmi Adesida.
Applied Physics Letters (1998)

315 Citations

AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

Wu Lu;Jinwei Yang;M.A. Khan;I. Adesida.
IEEE Transactions on Electron Devices (2001)

285 Citations

AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

Wu Lu;Jinwei Yang;M.A. Khan;I. Adesida.
IEEE Transactions on Electron Devices (2001)

285 Citations

Highly anisotropic photoenhanced wet etching of n-type GaN

C. Youtsey;I. Adesida;G. Bulman.
Applied Physics Letters (1997)

283 Citations

Highly anisotropic photoenhanced wet etching of n-type GaN

C. Youtsey;I. Adesida;G. Bulman.
Applied Physics Letters (1997)

283 Citations

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

V. Kumar;W. Lu;R. Schwindt;A. Kuliev.
IEEE Electron Device Letters (2002)

282 Citations

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

I. Adesida;A. Mahajan;E. Andideh;M. Asif Khan.
Applied Physics Letters (1993)

270 Citations

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