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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
17582
World Ranking
1021
National Ranking
433

Materials Science

D-Index
71
Citations
18766
World Ranking
4230
National Ranking
1134

Overview

Rajaram Bhat is a researcher affiliated with Corning in the United States, contributing to the field of materials science. Their work spans several subfields, including materials chemistry, organic chemistry, and electrical and electronic engineering.

Their research focuses on topics such as MXene and MAX phase materials, nanomaterials for catalytic reactions, advanced memory and neural computing, crystallization and solubility studies, and the application of X-ray diffraction in crystallography.

Rajaram Bhat has published in various scientific venues, including:

  • New Journal of Chemistry
  • Synlett
  • The Cambridge Structural Database

Notable recent publications include:

  • Synthesis and electrochemical evaluation of Ti and V-based carbide MXene via microwave assisted hydrofluoric acid etching for energy storage, 2025, New Journal of Chemistry
  • Linked PDF of Table of Contents, 2023, Synlett
  • CCDC 1988336: Experimental Crystal Structure Determination, 2020, The Cambridge Structural Database

Collaboration plays a role in their research activity, with frequent co-authors such as P.E. Lokhande, R. Udayabhaskar, Vishal Kadam, Chaitali Jagtap, and Sonal Padalkar.

Best Publications

  • Extreme selectivity in the lift‐off of epitaxial GaAs films

    Eli Yablonovitch;T. Gmitter;J. P. Harbison;R. Bhat

  • Optical properties of AlxGa1−x As

    D. E. Aspnes;S. M. Kelso;R. A. Logan;R. Bhat

  • Stimulated emission in semiconductor quantum wire heterostructures.

    E. Kapon;D. M. Hwang;R. Bhat

  • Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals

    M. Boroditsky;T. F. Krauss;R. Coccioli;R. Vrijen

  • Nearly ideal electronic properties of sulfide coated GaAs surfaces

    E. Yablonovitch;C. J. Sandroff;R. Bhat;T. Gmitter

  • High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications

    Chung-En Zah;R. Bhat;B.N. Pathak;F. Favire

  • Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures.

    E. Yablonovitch;T. J. Gmitter;R. Bhat

  • Spontaneous emission extraction and Purcell enhancement from thin-film 2-D photonic crystals

    M. Boroditsky;R. Vrijen;T.F. Krauss;R. Coccioli

  • Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition

    Itaru Kamiya;D. E. Aspnes;H. Tanaka;L. T. Florez

  • Gas foil rotating substrate holder

    Rajaram Bhat

  • Single quantum wire semiconductor lasers

    E. Kapon;S. Simhony;R. Bhat;D. M. Hwang

  • Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding

    S. J. B. Yoo;C. Caneau;R. Bhat;M. A. Koza

  • Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates

    Y. H. Lo;R. Bhat;D. M. Hwang;M. A. Koza

  • Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers

    R. Bhat;E. Kapon;D.M. Hwang;M.A. Koza

  • Monolithic InP/InGaAsP/InP Grating Spectrometer for the 1.48-1.56 μm Wavelength Range

    J. B. D. Soole;Axel Scherer;H. P. LeBlanc;N. C. Andreadakis

  • Quasi‐phase‐matched second‐harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer‐bonding

    S. J. B. Yoo;R. Bhat;C. Caneau;M. A. Koza

  • Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

    Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty

  • Surface Recombination Measurements on III-V Candidate Materials for Nanostructure Light-Emitting Diodes

    M. Boroditsky;I. Gontijo;M. Jackson;R. Vrijen

  • 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells

    Dmitry S. Sizov;Rajaram Bhat;Jerome Napierala;Chad Gallinat

  • Kinetic limits of monolayer growth on (001) GaAs by organometallic chemical-vapor deposition.

    Aspnes De;Colas E;Studna Aa;Bhat R

  • Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement

    Y. H. Lo;R. Bhat;D. M. Hwang;C. Chua

Frequent Co-Authors

C. Caneau
C. Caneau Corning (United States)
D. M. Hwang
D. M. Hwang École Polytechnique Fédérale de Lausanne
S. J. B. Yoo
S. J. B. Yoo University of California, Davis
J. P. Harbison
J. P. Harbison Telcordia Technologies
Axel Scherer
Axel Scherer California Institute of Technology
Eli Yablonovitch
Eli Yablonovitch University of California, Berkeley
Yu-Hwa Lo
Yu-Hwa Lo University of California, San Diego
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign
P. K. Bhattacharya
P. K. Bhattacharya University of Michigan–Ann Arbor
Minghwei Hong
Minghwei Hong National Taiwan University

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