World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
17582
World Ranking
1021
National Ranking
434

Materials Science

D-Index
71
Citations
18766
World Ranking
4228
National Ranking
1132

Rajaram Bhat publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Rajaram Bhat sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 494 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Rajaram Bhat D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Rajaram Bhat sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 68 D-Index — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Rajaram Bhat is a researcher affiliated with Corning in the United States, contributing to the field of materials science. Their work spans several subfields, including materials chemistry, organic chemistry, and electrical and electronic engineering.

Their research focuses on topics such as MXene and MAX phase materials, nanomaterials for catalytic reactions, advanced memory and neural computing, crystallization and solubility studies, and the application of X-ray diffraction in crystallography.

Rajaram Bhat has published in various scientific venues, including:

  • New Journal of Chemistry
  • Synlett
  • The Cambridge Structural Database

Notable recent publications include:

  • Synthesis and electrochemical evaluation of Ti and V-based carbide MXene via microwave assisted hydrofluoric acid etching for energy storage, 2025, New Journal of Chemistry
  • Linked PDF of Table of Contents, 2023, Synlett
  • CCDC 1988336: Experimental Crystal Structure Determination, 2020, The Cambridge Structural Database

Collaboration plays a role in their research activity, with frequent co-authors such as P.E. Lokhande, R. Udayabhaskar, Vishal Kadam, Chaitali Jagtap, and Sonal Padalkar.

Best Publications

  • Extreme selectivity in the lift‐off of epitaxial GaAs films

    Eli Yablonovitch;T. Gmitter;J. P. Harbison;R. Bhat

  • Optical properties of AlxGa1−x As

    D. E. Aspnes;S. M. Kelso;R. A. Logan;R. Bhat

  • Stimulated emission in semiconductor quantum wire heterostructures.

    E. Kapon;D. M. Hwang;R. Bhat

  • Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals

    M. Boroditsky;T. F. Krauss;R. Coccioli;R. Vrijen

  • Nearly ideal electronic properties of sulfide coated GaAs surfaces

    E. Yablonovitch;C. J. Sandroff;R. Bhat;T. Gmitter

  • High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications

    Chung-En Zah;R. Bhat;B.N. Pathak;F. Favire

  • Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures.

    E. Yablonovitch;T. J. Gmitter;R. Bhat

  • Spontaneous emission extraction and Purcell enhancement from thin-film 2-D photonic crystals

    M. Boroditsky;R. Vrijen;T.F. Krauss;R. Coccioli

  • Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition

    Itaru Kamiya;D. E. Aspnes;H. Tanaka;L. T. Florez

  • Gas foil rotating substrate holder

    Rajaram Bhat

  • Single quantum wire semiconductor lasers

    E. Kapon;S. Simhony;R. Bhat;D. M. Hwang

  • Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding

    S. J. B. Yoo;C. Caneau;R. Bhat;M. A. Koza

  • Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates

    Y. H. Lo;R. Bhat;D. M. Hwang;M. A. Koza

  • Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers

    R. Bhat;E. Kapon;D.M. Hwang;M.A. Koza

  • Monolithic InP/InGaAsP/InP Grating Spectrometer for the 1.48-1.56 μm Wavelength Range

    J. B. D. Soole;Axel Scherer;H. P. LeBlanc;N. C. Andreadakis

  • Quasi‐phase‐matched second‐harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer‐bonding

    S. J. B. Yoo;R. Bhat;C. Caneau;M. A. Koza

  • Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

    Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty

  • Surface Recombination Measurements on III-V Candidate Materials for Nanostructure Light-Emitting Diodes

    M. Boroditsky;I. Gontijo;M. Jackson;R. Vrijen

  • 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells

    Dmitry S. Sizov;Rajaram Bhat;Jerome Napierala;Chad Gallinat

  • Kinetic limits of monolayer growth on (001) GaAs by organometallic chemical-vapor deposition.

    Aspnes De;Colas E;Studna Aa;Bhat R

  • Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement

    Y. H. Lo;R. Bhat;D. M. Hwang;C. Chua

Frequent Co-Authors

C. Caneau
C. Caneau Corning (United States)
D. M. Hwang
D. M. Hwang École Polytechnique Fédérale de Lausanne
S. J. B. Yoo
S. J. B. Yoo University of California, Davis
J. P. Harbison
J. P. Harbison Telcordia Technologies
Axel Scherer
Axel Scherer California Institute of Technology
Eli Yablonovitch
Eli Yablonovitch University of California, Berkeley
Yu-Hwa Lo
Yu-Hwa Lo University of California, San Diego
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign
P. K. Bhattacharya
P. K. Bhattacharya University of Michigan–Ann Arbor
Minghwei Hong
Minghwei Hong National Taiwan University

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