World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
8595
World Ranking
2968
National Ranking
1113

C. Caneau publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where C. Caneau sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 358 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

C. Caneau D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where C. Caneau sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 49 D-Index — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

C. Caneau is affiliated with Corning in the United States, where they conduct their research activities. Their professional work is situated within the scientific and technical environment provided by this organization.

The available data does not include information about recent papers, frequent co-authors, or publication venues associated with Caneau. Details about books published or awards won by them are also not provided.

There are no listed main fields, subfields, or specific topics of study directly attributed to Caneau in the available dataset. Similarly, detailed information about their research focus or thematic areas is not accessible at this time.

Due to the limited data, no further specifics about the research contributions, collaborations, or scholarly output of C. Caneau are available for analysis or presentation.

Best Publications

  • 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes

    I. Schnitzer;E. Yablonovitch;C. Caneau;T. J. Gmitter

  • Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

    I. Schnitzer;E. Yablonovitch;C. Caneau;T. J. Gmitter

  • Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding

    S. J. B. Yoo;C. Caneau;R. Bhat;M. A. Koza

  • Quasi‐phase‐matched second‐harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer‐bonding

    S. J. B. Yoo;R. Bhat;C. Caneau;M. A. Koza

  • Passband broadening of integrated arrayed waveguide filters using multimode interference couplers

    M.R. Amersfoort;J.B.D. Soole;H.P. LeBlanc;N.C. Andreadakis

  • Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD

    N. Nishiyama;C. Caneau;B. Hall;G. Guryanov

  • Studies on the selective OMVPE of (Ga,In)/(As,P)

    C. Caneau;R. Bhat;M.R. Frei;C.C. Chang

  • Monolithic integration of multiwavelength compressive-strained multiquantum-well distributed-feedback laser array with star coupler and optical amplifiers

    C.E. Zah;F.J. Favire;B. Pathak;R. Bhat

  • Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

    R. Bhat;C. Caneau;C.E. Zah;M.A. Koza

  • Use of multimode interference couplers to broaden the passband of wavelength-dispersive integrated WDM filters

    J.B.D. Soole;M.R. Amersfoort;H.P. Leblanc;N.C. Andreadakis

  • Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition

    R Bhat;C Caneau;Lourdes Salamanca-Riba;W Bi

  • Polarisation-independent InP arrayed waveguide filter using square cross-section waveguides

    J. B.D. Soole;M. R. Amersfoort;H. P. LeBlanc;N. C. Andreadakis

  • Low threshold 1.5 mu m tensile-strained single quantum well lasers

    C.E. Zah;R. Bhat;B. Pathak;C. Caneau

  • GaInAsP lateral current injection lasers on semi-insulating substrates

    K. Oe;Y. Noguchi;C. Caneau

  • Thermal management strategies for high power semiconductor pump lasers

    Xingsheng Liu;M.H. Hu;C.G. Caneau;R. Bhat

  • Characterization of chemically assisted ion beam etching of InP

    C. Youtsey;R. Grundbacher;R. Panepucci;I. Adesida

  • Ultracompact monolithic integration of balanced, polarization diversity photodetectors for coherent lightwave receivers

    R.J. Deri;E.C.M. Pennings;A. Scherer;A.S. Gozdz

  • Multiwavelength DFB laser array transmitters for ONTC reconfigurable optical network testbed

    T.-P. Lee;C.E. Zah;R. Bhat;W.C. Young

  • InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition

    R. Bhat;W.-P. Hong;C. Caneau;M. A. Koza

  • Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm

    C. Caneau;A.K. Srivastava;A.G. Dentai;J.L. Zyskind

Frequent Co-Authors

Rajaram Bhat
Rajaram Bhat Corning (United States)
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign
Patrick Fay
Patrick Fay University of Notre Dame
Axel Scherer
Axel Scherer California Institute of Technology
S. J. B. Yoo
S. J. B. Yoo University of California, Davis
P. K. Bhattacharya
P. K. Bhattacharya University of Michigan–Ann Arbor
D. M. Hwang
D. M. Hwang École Polytechnique Fédérale de Lausanne
Paul W. Bohn
Paul W. Bohn University of Notre Dame
Kam Y. Lau
Kam Y. Lau University of California, Berkeley
A.G. Dentai
A.G. Dentai Infinera (United States)

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