World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
8595
World Ranking
2968
National Ranking
1112

Overview

C. Caneau is affiliated with Corning in the United States, where they conduct their research activities. Their professional work is situated within the scientific and technical environment provided by this organization.

The available data does not include information about recent papers, frequent co-authors, or publication venues associated with Caneau. Details about books published or awards won by them are also not provided.

There are no listed main fields, subfields, or specific topics of study directly attributed to Caneau in the available dataset. Similarly, detailed information about their research focus or thematic areas is not accessible at this time.

Due to the limited data, no further specifics about the research contributions, collaborations, or scholarly output of C. Caneau are available for analysis or presentation.

Best Publications

  • 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes

    I. Schnitzer;E. Yablonovitch;C. Caneau;T. J. Gmitter

  • Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

    I. Schnitzer;E. Yablonovitch;C. Caneau;T. J. Gmitter

  • Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding

    S. J. B. Yoo;C. Caneau;R. Bhat;M. A. Koza

  • Quasi‐phase‐matched second‐harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer‐bonding

    S. J. B. Yoo;R. Bhat;C. Caneau;M. A. Koza

  • Passband broadening of integrated arrayed waveguide filters using multimode interference couplers

    M.R. Amersfoort;J.B.D. Soole;H.P. LeBlanc;N.C. Andreadakis

  • Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD

    N. Nishiyama;C. Caneau;B. Hall;G. Guryanov

  • Studies on the selective OMVPE of (Ga,In)/(As,P)

    C. Caneau;R. Bhat;M.R. Frei;C.C. Chang

  • Monolithic integration of multiwavelength compressive-strained multiquantum-well distributed-feedback laser array with star coupler and optical amplifiers

    C.E. Zah;F.J. Favire;B. Pathak;R. Bhat

  • Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

    R. Bhat;C. Caneau;C.E. Zah;M.A. Koza

  • Use of multimode interference couplers to broaden the passband of wavelength-dispersive integrated WDM filters

    J.B.D. Soole;M.R. Amersfoort;H.P. Leblanc;N.C. Andreadakis

  • Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition

    R Bhat;C Caneau;Lourdes Salamanca-Riba;W Bi

  • Polarisation-independent InP arrayed waveguide filter using square cross-section waveguides

    J. B.D. Soole;M. R. Amersfoort;H. P. LeBlanc;N. C. Andreadakis

  • Low threshold 1.5 mu m tensile-strained single quantum well lasers

    C.E. Zah;R. Bhat;B. Pathak;C. Caneau

  • GaInAsP lateral current injection lasers on semi-insulating substrates

    K. Oe;Y. Noguchi;C. Caneau

  • Thermal management strategies for high power semiconductor pump lasers

    Xingsheng Liu;M.H. Hu;C.G. Caneau;R. Bhat

  • Characterization of chemically assisted ion beam etching of InP

    C. Youtsey;R. Grundbacher;R. Panepucci;I. Adesida

  • Ultracompact monolithic integration of balanced, polarization diversity photodetectors for coherent lightwave receivers

    R.J. Deri;E.C.M. Pennings;A. Scherer;A.S. Gozdz

  • Multiwavelength DFB laser array transmitters for ONTC reconfigurable optical network testbed

    T.-P. Lee;C.E. Zah;R. Bhat;W.C. Young

  • InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition

    R. Bhat;W.-P. Hong;C. Caneau;M. A. Koza

  • Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm

    C. Caneau;A.K. Srivastava;A.G. Dentai;J.L. Zyskind

Frequent Co-Authors

Rajaram Bhat
Rajaram Bhat Corning (United States)
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign
Patrick Fay
Patrick Fay University of Notre Dame
Axel Scherer
Axel Scherer California Institute of Technology
S. J. B. Yoo
S. J. B. Yoo University of California, Davis
D. M. Hwang
D. M. Hwang École Polytechnique Fédérale de Lausanne
Paul W. Bohn
Paul W. Bohn University of Notre Dame
Kam Y. Lau
Kam Y. Lau University of California, Berkeley
A.G. Dentai
A.G. Dentai Infinera (United States)
Eli Yablonovitch
Eli Yablonovitch University of California, Berkeley

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