World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
9914
World Ranking
3192
National Ranking
1193

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to compound semiconductor tunneling and high-speed device technologies

Overview

Patrick Fay is affiliated with the University of Notre Dame in the United States. Their research primarily focuses on engineering, with notable specialization in electrical and electronic engineering. Within these fields, their work extends into condensed matter physics, electronic, optical and magnetic materials, atomic and molecular physics and optics, as well as biomedical engineering.

The scientist's research contributions include topics such as:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Radio Frequency Integrated Circuit Design
  • Ga2O3 and related materials
  • Photonic and Optical Devices
  • Terahertz technology and applications
  • Silicon Carbide Semiconductor Technologies

Patrick Fay has published extensively in several scholarly venues. The most frequent publication outlets include:

  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Transactions on Terahertz Science and Technology
  • IEEE Electron Device Letters
  • physica status solidi (a)

Their recent papers consist of the following works:

  • "Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors," 2022, published in Nature
  • "Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT," 2021, IEEE Electron Device Letters
  • "360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications," 2020, IEEE Electron Device Letters
  • "Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties," 2022, Applied Physics Letters
  • "W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz," 2022, IEEE Microwave and Wireless Technology Letters

Collaboration is a significant aspect of their scholarly endeavors. Frequent co-authors include:

  • Paul R. Berger
  • Benjamín Iñíguez
  • K. Ishimaru
  • R Todi
  • John M. Dallesasse

In recognition of their professional contributions, Patrick Fay was named an IEEE Fellow in 2016 for contributions to compound semiconductor tunneling and high-speed device technologies.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

    Dong Seup Lee;Xiang Gao;Shiping Guo;D. Kopp

  • InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

    Yuanzheng Yue;Zongyang Hu;Jia Guo;B. Sensale-Rodriguez

  • AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

    T. Zimmermann;D. Deen;Yu Cao;J. Simon

  • 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

    Dong Seup Lee;Jinwook W Chung;Han Wang;Xiang Gao

  • Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V

    Guangle Zhou;R. Li;T. Vasen;M. Qi

  • Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

    Ronghua Wang;P Saunier;Xiu Xing;Chuanxin Lian

  • Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

    John Simon;Ze Zhang;Kevin Goodman;Huili Xing

  • Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes

    Jeffrey A. Bean;Badri Tiwari;Gary H. Bernstein;P. Fay

  • Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

    Yeqing Lu;Guangle Zhou;Rui Li;Qingmin Liu

  • 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

    Ronghua Wang;Guowang Li;O. Laboutin;Yu Cao

  • Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

    Yuanzheng Yue;Zongyang Hu;Jia Guo;Berardi Sensale-Rodriguez

  • AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

    Rui Li;Yeqing Lu;Guangle Zhou;Qingmin Liu

  • Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${ m pW/Hz}^{1/2}$ Noise Equivalent Power

    Ze Zhang;R Rajavel;P Deelman;P Fay

  • Gate-recessed integrated E/D GaN HEMT technology with f T /f max >300 GHz

    M. L. Schuette;A. Ketterson;Bo Song

  • Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

    Debdeep Jena;John Simon;Albert;Wang

  • High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

    Jingshan Wang;Lina Cao;Jinqiao Xie;Edward Beam

  • Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting With Heterojunction Backward Tunnel Diodes

    Carlos Henrique Petzl Lorenz;Simon Hemour;Wenjun Li;Yi Xie

  • Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

    Lina Cao;Jingshan Wang;Galen Harden;Hansheng Ye

  • 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

    Ronghua Wang;Guowang Li;J. Verma;B. Sensale-Rodriguez

  • Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

    Wenjun Li;Saima Sharmin;Hesameddin Ilatikhameneh;Rajib Rahman

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Gregory L. Snider
Gregory L. Snider University of Notre Dame
Gary H. Bernstein
Gary H. Bernstein University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Yu Cao
Yu Cao Zhejiang University
C. Caneau
C. Caneau Corning (United States)
Wolfgang Porod
Wolfgang Porod University of Notre Dame
Alexei O. Orlov
Alexei O. Orlov University of Notre Dame
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign

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