World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
9914
World Ranking
3192
National Ranking
1194

Patrick Fay publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Patrick Fay sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 380 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Patrick Fay D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Patrick Fay sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to compound semiconductor tunneling and high-speed device technologies

Overview

Patrick Fay is affiliated with the University of Notre Dame in the United States. Their research primarily focuses on engineering, with notable specialization in electrical and electronic engineering. Within these fields, their work extends into condensed matter physics, electronic, optical and magnetic materials, atomic and molecular physics and optics, as well as biomedical engineering.

The scientist's research contributions include topics such as:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Radio Frequency Integrated Circuit Design
  • Ga2O3 and related materials
  • Photonic and Optical Devices
  • Terahertz technology and applications
  • Silicon Carbide Semiconductor Technologies

Patrick Fay has published extensively in several scholarly venues. The most frequent publication outlets include:

  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Transactions on Terahertz Science and Technology
  • IEEE Electron Device Letters
  • physica status solidi (a)

Their recent papers consist of the following works:

  • "Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors," 2022, published in Nature
  • "Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT," 2021, IEEE Electron Device Letters
  • "360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications," 2020, IEEE Electron Device Letters
  • "Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties," 2022, Applied Physics Letters
  • "W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz," 2022, IEEE Microwave and Wireless Technology Letters

Collaboration is a significant aspect of their scholarly endeavors. Frequent co-authors include:

  • Paul R. Berger
  • Benjamín Iñíguez
  • K. Ishimaru
  • R Todi
  • John M. Dallesasse

In recognition of their professional contributions, Patrick Fay was named an IEEE Fellow in 2016 for contributions to compound semiconductor tunneling and high-speed device technologies.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

    Dong Seup Lee;Xiang Gao;Shiping Guo;D. Kopp

  • InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

    Yuanzheng Yue;Zongyang Hu;Jia Guo;B. Sensale-Rodriguez

  • AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

    T. Zimmermann;D. Deen;Yu Cao;J. Simon

  • 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

    Dong Seup Lee;Jinwook W Chung;Han Wang;Xiang Gao

  • Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V

    Guangle Zhou;R. Li;T. Vasen;M. Qi

  • Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

    Ronghua Wang;P Saunier;Xiu Xing;Chuanxin Lian

  • Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

    John Simon;Ze Zhang;Kevin Goodman;Huili Xing

  • Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes

    Jeffrey A. Bean;Badri Tiwari;Gary H. Bernstein;P. Fay

  • Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

    Yeqing Lu;Guangle Zhou;Rui Li;Qingmin Liu

  • 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

    Ronghua Wang;Guowang Li;O. Laboutin;Yu Cao

  • Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

    Yuanzheng Yue;Zongyang Hu;Jia Guo;Berardi Sensale-Rodriguez

  • AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

    Rui Li;Yeqing Lu;Guangle Zhou;Qingmin Liu

  • Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${ m pW/Hz}^{1/2}$ Noise Equivalent Power

    Ze Zhang;R Rajavel;P Deelman;P Fay

  • Gate-recessed integrated E/D GaN HEMT technology with f T /f max >300 GHz

    M. L. Schuette;A. Ketterson;Bo Song

  • Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

    Debdeep Jena;John Simon;Albert;Wang

  • High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

    Jingshan Wang;Lina Cao;Jinqiao Xie;Edward Beam

  • Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting With Heterojunction Backward Tunnel Diodes

    Carlos Henrique Petzl Lorenz;Simon Hemour;Wenjun Li;Yi Xie

  • Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

    Lina Cao;Jingshan Wang;Galen Harden;Hansheng Ye

  • 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

    Ronghua Wang;Guowang Li;J. Verma;B. Sensale-Rodriguez

  • Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

    Wenjun Li;Saima Sharmin;Hesameddin Ilatikhameneh;Rajib Rahman

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Gregory L. Snider
Gregory L. Snider University of Notre Dame
Gary H. Bernstein
Gary H. Bernstein University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Yu Cao
Yu Cao Zhejiang University
C. Caneau
C. Caneau Corning (United States)
Wolfgang Porod
Wolfgang Porod University of Notre Dame
Alexei O. Orlov
Alexei O. Orlov University of Notre Dame
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign

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