World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
7790
World Ranking
5256
National Ranking
1813

Gregory L. Snider publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gregory L. Snider sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 200 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Gregory L. Snider D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gregory L. Snider sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Gregory L. Snider is affiliated with the University of Notre Dame in the United States. Their research spans several fields including Physics and Astronomy, Engineering, and Computer Science, with notable contributions in Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, and Computational Theory and Mathematics.

Snider's primary topics of research focus on quantum and electron transport phenomena. Their work extensively covers Quantum-Dot Cellular Automata and advancements in semiconductor devices and circuit design. Other significant areas of study include mechanical and optical resonators, quantum computing algorithms and architecture, advanced memory and neural computing, and topological materials and phenomena.

The scientist has published in various peer-reviewed journals and conference venues. Frequent publication venues include:

  • Scientific Reports
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • IEEE Transactions on Nanotechnology
  • IEEE Sensors Letters
  • Applied Sciences

Recent papers authored or coauthored by Snider include:

  • "Tunable, Hardware-Based Quantum Random Number Generation Using Coupled Quantum Dots" (2020, IEEE Transactions on Nanotechnology)
  • "Dipole Charge Detection: Toward the Readout of Bistable Charge States in Molecular QCA" (2023, IEEE Sensors Letters)
  • "Nano-photoluminescence of natural anyon molecules and topological quantum computation" (2021, Scientific Reports)
  • "Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications" (2020, Applied Sciences)
  • "Gate reflectometry of single-electron box arrays using calibrated low temperature matching networks" (2022, Scientific Reports)

Throughout their career, Snider has collaborated frequently with several coauthors including:

  • Alexei O. Orlov
  • Jonathan Chisum
  • Mohammad Istiaque Rahaman
  • Gergo P. Szakmany
  • Thomas A. Zirkle

These collaborations have supported research advancing quantum-dot cellular automata and nanoscale sensor design as well as theoretical and practical aspects of quantum and electron transport.

Best Publications

  • Realization of a Functional Cell for Quantum-Dot Cellular Automata

    A. O. Orlov;I. Amlani;G. H. Bernstein;C. S. Lent

  • Digital logic gate using quantum-Dot cellular automata

    Islamshah Amlani;Alexei O. Orlov;Geza Toth;Geza Toth;Gary H. Bernstein

  • Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

    R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

  • InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

    Yuanzheng Yue;Zongyang Hu;Jia Guo;B. Sensale-Rodriguez

  • Molecular quantum cellular automata cells. Electric field driven switching of a silicon surface bound array of vertically oriented two-dot molecular quantum cellular automata.

    Hua Qi;Sharad Sharma;Zhaohui Li;Gregory L. Snider

  • Electron mobility in modulation-doped AlGaN-GaN heterostructures

    R. Gaska;M. S. Shur;A. D. Bykhovski;A. O. Orlov

  • Operation of a quantum-dot cellular automata (QCA) shift register and analysis of errors

    R.K. Kummamuru;A.O. Orlov;R. Ramasubramaniam;C.S. Lent

  • Experimental demonstration of a leadless quantum-dot cellular automata cell

    Islamshah Amlani;Alexei O. Orlov;Ravi K. Kummamuru;Gary H. Bernstein

  • Quantum-Dot Cellular Automata at a Molecular Scale

    Marya Lieberman;Sudha Chellamma;Bindhu Varughese;Yuliang Wang

  • Electron states in mesa‐etched one‐dimensional quantum well wires

    G. L. Snider;I.‐H. Tan;E. L. Hu

  • Quantum-dot cellular automata: Review and recent experiments (invited)

    G. L. Snider;A. O. Orlov;I. Amlani;X. Zuo

  • Experimental demonstration of clocked single-electron switching in quantum-dot cellular automata

    Alexei O. Orlov;Islamshah Amlani;Ravi K. Kummamuru;Rajagopal Ramasubramaniam

  • Quantum-dot cellular automata : computing with coupled quantum dots

    Wolfgang Porod;Craigs Lent;Gary H. Bernstein;Alexei O. Orlov

  • Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

    Ronghua Wang;P Saunier;Xiu Xing;Chuanxin Lian

  • Demonstration of a six-dot quantum cellular automata system

    Islamshah Amlani;Alexei O. Orlov;Gregory L. Snider;Craig S. Lent

  • Quantum-Dot Cellular Automata:Line and Majority Logic Gate

    Gregory L. Snider;Alexei O. Orlov;Islamshah Amlani;Gary H. Bernstein

  • Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

    Mingda (Oscar) Li;David Esseni;Gregory Snider;Debdeep Jena

  • Power gain in a quantum-dot cellular automata latch

    Ravi K. Kummamuru;John Timler;Geza Toth;Craig S. Lent

  • 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

    Ronghua Wang;Guowang Li;O. Laboutin;Yu Cao

  • Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

    Yuanzheng Yue;Zongyang Hu;Jia Guo;Berardi Sensale-Rodriguez

  • Quantum-dot cellular automata

    G. L. Snider;A. O. Orlov;I. Amlani;X. Zuo

Frequent Co-Authors

Alexei O. Orlov
Alexei O. Orlov University of Notre Dame
Gary H. Bernstein
Gary H. Bernstein University of Notre Dame
Debdeep Jena
Debdeep Jena Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
James L. Merz
James L. Merz University of Notre Dame
Wolfgang Porod
Wolfgang Porod University of Notre Dame
Géza Tóth
Géza Tóth University of the Basque Country
Huili Grace Xing
Huili Grace Xing Cornell University
Evelyn L. Hu
Evelyn L. Hu Harvard University
Yu Cao
Yu Cao Zhejiang University

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