D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 53 Citations 10,488 327 World Ranking 1495 National Ranking 673
Materials Science D-index 55 Citations 11,703 360 World Ranking 5631 National Ranking 1578

Research.com Recognitions

Awards & Achievements

2019 - Fellow of American Physical Society (APS) Citation For pioneering contributions in polar widebandgap semiconductors, 2D crystal semiconductors, and layered crystals

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Optoelectronics

His primary areas of investigation include Optoelectronics, Graphene, Semiconductor, Heterojunction and Transistor. His studies deal with areas such as Gallium nitride, Breakdown voltage and Epitaxy as well as Optoelectronics. His Graphene study integrates concerns from other disciplines, such as Monolayer, Absorption and Terahertz radiation.

His Semiconductor research integrates issues from Field-effect transistor and Nanotechnology. His work deals with themes such as Molecular beam epitaxy, Doping and Quantum tunnelling, which intersect with Heterojunction. Huili Grace Xing interconnects Orders of magnitude, Power electronics and Power gain in the investigation of issues within Transistor.

His most cited work include:

  • Broadband graphene terahertz modulators enabled by intraband transitions (715 citations)
  • Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy (461 citations)
  • Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals (456 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Heterojunction, Molecular beam epitaxy, Transistor and Diode. His Optoelectronics study incorporates themes from Gallium nitride and High-electron-mobility transistor. His work carried out in the field of Heterojunction brings together such families of science as Quantum tunnelling, Nitride and Engineering physics.

His studies in Molecular beam epitaxy integrate themes in fields like Electron diffraction, Reflection high-energy electron diffraction, Monolayer and Analytical chemistry. His Diode study integrates concerns from other disciplines, such as Breakdown voltage, Light-emitting diode and Doping. His Band gap study which covers Graphene that intersects with Optics.

He most often published in these fields:

  • Optoelectronics (70.28%)
  • Heterojunction (26.20%)
  • Molecular beam epitaxy (24.18%)

What were the highlights of his more recent work (between 2019-2021)?

  • Optoelectronics (70.28%)
  • Molecular beam epitaxy (24.18%)
  • Heterojunction (26.20%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Molecular beam epitaxy, Heterojunction, Diode and Epitaxy. Huili Grace Xing studies Band gap, a branch of Optoelectronics. Huili Grace Xing has included themes like Suboxide, Superconductivity, Chemical engineering and Semiconductor in his Molecular beam epitaxy study.

His Heterojunction research incorporates themes from Characterization, Quantum Hall effect and Engineering physics. His research in Diode intersects with topics in Condensed matter physics, Quantum tunnelling, Tunnel junction and Leakage. His research integrates issues of Sapphire, Substrate, Crystal and Ferromagnetism in his study of Epitaxy.

Between 2019 and 2021, his most popular works were:

  • Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 / $R_{ ext{on,sp}}$ of up to 0.95 GW/cm 2 (38 citations)
  • Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes (15 citations)
  • Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications (10 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Transistor

Huili Grace Xing mainly investigates Optoelectronics, Molecular beam epitaxy, Epitaxy, Nitride and Heterojunction. His Optoelectronics research is multidisciplinary, incorporating perspectives in Field-effect transistor and Transistor. He has researched Molecular beam epitaxy in several fields, including Thin film, Superconductivity and Chemical engineering.

The study incorporates disciplines such as Laser diode and Light-emitting diode, Optics in addition to Heterojunction. In his study, Diode is strongly linked to Quantum tunnelling, which falls under the umbrella field of Doping. His Semiconductor study combines topics in areas such as Sapphire, Phase transition and Band gap.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Broadband graphene terahertz modulators enabled by intraband transitions

Berardi Sensale-Rodriguez;Rusen Yan;Michelle M. Kelly;Tian Fang.
Nature Communications (2012)

987 Citations

Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals

Hongyan Shi;Rusen Yan;Simone Bertolazzi;Jacopo Brivio.
ACS Nano (2013)

757 Citations

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

Rusen Yan;Jeffrey R. Simpson;Simone Bertolazzi;Jacopo Brivio.
ACS Nano (2014)

712 Citations

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko.
Applied Physics Letters (2014)

303 Citations

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

Rusen Yan;Rusen Yan;Sara Fathipour;Yimo Han;Bo Song;Bo Song.
Nano Letters (2015)

300 Citations

Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu.
Nano Letters (2012)

274 Citations

Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen.
IEEE Electron Device Letters (2018)

240 Citations

Intrinsic electron mobility limits in β-Ga2O3

Nan Ma;Nicholas Tanen;Amit Verma;Zhi Guo.
Applied Physics Letters (2016)

235 Citations

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

T. Zimmermann;D. Deen;Yu Cao;J. Simon.
IEEE Electron Device Letters (2008)

195 Citations

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

Rusen Yan;Qin Zhang;Wei Li;Irene Calizo.
Applied Physics Letters (2012)

191 Citations

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