World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
84
Citations
25099
World Ranking
414
National Ranking
195

Materials Science

D-Index
86
Citations
26828
World Ranking
2066
National Ranking
620

Huili Grace Xing publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Huili Grace Xing sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 495 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Huili Grace Xing D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Huili Grace Xing sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 84 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - Fellow of American Physical Society (APS) Citation For pioneering contributions in polar widebandgap semiconductors, 2D crystal semiconductors, and layered crystals

Overview

Huili Grace Xing is affiliated with Cornell University in the United States and focuses on research in materials science, physics and astronomy, and engineering. Their academic work spans a range of subfields including condensed matter physics, materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research topics prominently include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, acoustic wave resonator technologies, semiconductor materials and devices, semiconductor quantum structures and devices, and electronic and structural properties of oxides.

Frequent coauthors collaborating with Xing include:

  • Debdeep Jena
  • Kazuki Nomoto
  • David A. Muller
  • Jimy Encomendero
  • Yong-Jin Cho

Xing has published extensively in several scientific publication venues. These include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • APL Materials
  • IEEE Transactions on Electron Devices
  • Journal of Applied Physics

Some of their recent publications are:

  • "Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices," 2020, IEEE Transactions on Electron Devices
  • "Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes," 2020, Applied Physics Letters
  • "Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire," 2021, Science Advances
  • "GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz," 2020, IEEE Electron Device Letters
  • "Next generation electronics on the ultrawide-bandgap aluminum nitride platform," 2021, Semiconductor Science and Technology

In recognition of their contributions, Xing was named a Fellow of the American Physical Society in 2019 for work on polar widebandgap semiconductors, 2D crystal semiconductors, and layered crystals.

Best Publications

  • Broadband graphene terahertz modulators enabled by intraband transitions

    Berardi Sensale-Rodriguez;Rusen Yan;Michelle M. Kelly;Tian Fang

  • Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

    Rusen Yan;Jeffrey R. Simpson;Simone Bertolazzi;Jacopo Brivio

  • Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals

    Hongyan Shi;Rusen Yan;Simone Bertolazzi;Jacopo Brivio

  • Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

    John Simon;Vladimir Protasenko;Chuanxin Lian;Huili Xing

  • Carrier statistics and quantum capacitance of graphene sheets and ribbons

    Tian Fang;Aniruddha Konar;Huili Xing;Debdeep Jena

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • Heavy doping effects in Mg-doped GaN

    Peter Kozodoy;Huili Xing;Steven P. DenBaars;Umesh K. Mishra

  • Intrinsic electron mobility limits in β-Ga2O3

    Nan Ma;Nicholas Tanen;Amit Verma;Zhi Guo

  • Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

    Rusen Yan;Rusen Yan;Sara Fathipour;Yimo Han;Bo Song;Bo Song

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

    Tian Fang;Aniruddha Konar;Huili Xing;Debdeep Jena

  • Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

    Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu

  • Graphene Nanoribbon Tunnel Transistors

    Qin Zhang;Tian Fang;Huili Xing;A. Seabaugh

  • Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 / $R_{ ext{on,sp}}$ of up to 0.95 GW/cm 2

    Wenshen Li;Kazuki Nomoto;Zongyang Hu;Debdeep Jena

  • Intrinsic Electron Mobility Limits in beta-Ga2O3

    Nan Ma;Nicholas Tanen;Amit Verma;Zhi Guo

  • Unique prospects of graphene-based THz modulators

    Berardi Sensale-Rodriguez;Tian Fang;Rusen Yan;Michelle M. Kelly

  • Polarization-enhanced Mg doping of AlGaN/GaN superlattices

    Peter Kozodoy;Yulia P. Smorchkova;Monica Hansen;Huili Xing

  • Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

    Rusen Yan;Qin Zhang;Wei Li;Irene Calizo

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Kazuki Nomoto
Kazuki Nomoto Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Vladimir Protasenko
Vladimir Protasenko Cornell University
Sergei Rouvimov
Sergei Rouvimov University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Yu Cao
Yu Cao Zhejiang University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
David A. Muller
David A. Muller Cornell University

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