2019 - Fellow of American Physical Society (APS) Citation For pioneering contributions in polar widebandgap semiconductors, 2D crystal semiconductors, and layered crystals
His primary areas of investigation include Optoelectronics, Graphene, Semiconductor, Heterojunction and Transistor. His studies deal with areas such as Gallium nitride, Breakdown voltage and Epitaxy as well as Optoelectronics. His Graphene study integrates concerns from other disciplines, such as Monolayer, Absorption and Terahertz radiation.
His Semiconductor research integrates issues from Field-effect transistor and Nanotechnology. His work deals with themes such as Molecular beam epitaxy, Doping and Quantum tunnelling, which intersect with Heterojunction. Huili Grace Xing interconnects Orders of magnitude, Power electronics and Power gain in the investigation of issues within Transistor.
His main research concerns Optoelectronics, Heterojunction, Molecular beam epitaxy, Transistor and Diode. His Optoelectronics study incorporates themes from Gallium nitride and High-electron-mobility transistor. His work carried out in the field of Heterojunction brings together such families of science as Quantum tunnelling, Nitride and Engineering physics.
His studies in Molecular beam epitaxy integrate themes in fields like Electron diffraction, Reflection high-energy electron diffraction, Monolayer and Analytical chemistry. His Diode study integrates concerns from other disciplines, such as Breakdown voltage, Light-emitting diode and Doping. His Band gap study which covers Graphene that intersects with Optics.
His primary areas of study are Optoelectronics, Molecular beam epitaxy, Heterojunction, Diode and Epitaxy. Huili Grace Xing studies Band gap, a branch of Optoelectronics. Huili Grace Xing has included themes like Suboxide, Superconductivity, Chemical engineering and Semiconductor in his Molecular beam epitaxy study.
His Heterojunction research incorporates themes from Characterization, Quantum Hall effect and Engineering physics. His research in Diode intersects with topics in Condensed matter physics, Quantum tunnelling, Tunnel junction and Leakage. His research integrates issues of Sapphire, Substrate, Crystal and Ferromagnetism in his study of Epitaxy.
Huili Grace Xing mainly investigates Optoelectronics, Molecular beam epitaxy, Epitaxy, Nitride and Heterojunction. His Optoelectronics research is multidisciplinary, incorporating perspectives in Field-effect transistor and Transistor. He has researched Molecular beam epitaxy in several fields, including Thin film, Superconductivity and Chemical engineering.
The study incorporates disciplines such as Laser diode and Light-emitting diode, Optics in addition to Heterojunction. In his study, Diode is strongly linked to Quantum tunnelling, which falls under the umbrella field of Doping. His Semiconductor study combines topics in areas such as Sapphire, Phase transition and Band gap.
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Broadband graphene terahertz modulators enabled by intraband transitions
Berardi Sensale-Rodriguez;Rusen Yan;Michelle M. Kelly;Tian Fang.
Nature Communications (2012)
Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals
Hongyan Shi;Rusen Yan;Simone Bertolazzi;Jacopo Brivio.
ACS Nano (2013)
Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy
Rusen Yan;Jeffrey R. Simpson;Simone Bertolazzi;Jacopo Brivio.
ACS Nano (2014)
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko.
Applied Physics Letters (2014)
Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment
Rusen Yan;Rusen Yan;Sara Fathipour;Yimo Han;Bo Song;Bo Song.
Nano Letters (2015)
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.
Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu.
Nano Letters (2012)
Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV
Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen.
IEEE Electron Device Letters (2018)
Intrinsic electron mobility limits in β-Ga2O3
Nan Ma;Nicholas Tanen;Amit Verma;Zhi Guo.
Applied Physics Letters (2016)
AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
T. Zimmermann;D. Deen;Yu Cao;J. Simon.
IEEE Electron Device Letters (2008)
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
Rusen Yan;Qin Zhang;Wei Li;Irene Calizo.
Applied Physics Letters (2012)
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