World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
84
Citations
25099
World Ranking
414
National Ranking
194

Materials Science

D-Index
86
Citations
26828
World Ranking
2068
National Ranking
622

Research.com Recognitions

  • 2019 - Fellow of American Physical Society (APS) Citation For pioneering contributions in polar widebandgap semiconductors, 2D crystal semiconductors, and layered crystals

Overview

Huili Grace Xing is affiliated with Cornell University in the United States and focuses on research in materials science, physics and astronomy, and engineering. Their academic work spans a range of subfields including condensed matter physics, materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research topics prominently include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, acoustic wave resonator technologies, semiconductor materials and devices, semiconductor quantum structures and devices, and electronic and structural properties of oxides.

Frequent coauthors collaborating with Xing include:

  • Debdeep Jena
  • Kazuki Nomoto
  • David A. Muller
  • Jimy Encomendero
  • Yong-Jin Cho

Xing has published extensively in several scientific publication venues. These include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • APL Materials
  • IEEE Transactions on Electron Devices
  • Journal of Applied Physics

Some of their recent publications are:

  • "Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices," 2020, IEEE Transactions on Electron Devices
  • "Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes," 2020, Applied Physics Letters
  • "Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire," 2021, Science Advances
  • "GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz," 2020, IEEE Electron Device Letters
  • "Next generation electronics on the ultrawide-bandgap aluminum nitride platform," 2021, Semiconductor Science and Technology

In recognition of their contributions, Xing was named a Fellow of the American Physical Society in 2019 for work on polar widebandgap semiconductors, 2D crystal semiconductors, and layered crystals.

Best Publications

  • Broadband graphene terahertz modulators enabled by intraband transitions

    Berardi Sensale-Rodriguez;Rusen Yan;Michelle M. Kelly;Tian Fang

  • Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

    Rusen Yan;Jeffrey R. Simpson;Simone Bertolazzi;Jacopo Brivio

  • Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals

    Hongyan Shi;Rusen Yan;Simone Bertolazzi;Jacopo Brivio

  • Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

    John Simon;Vladimir Protasenko;Chuanxin Lian;Huili Xing

  • Carrier statistics and quantum capacitance of graphene sheets and ribbons

    Tian Fang;Aniruddha Konar;Huili Xing;Debdeep Jena

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • Heavy doping effects in Mg-doped GaN

    Peter Kozodoy;Huili Xing;Steven P. DenBaars;Umesh K. Mishra

  • Intrinsic electron mobility limits in β-Ga2O3

    Nan Ma;Nicholas Tanen;Amit Verma;Zhi Guo

  • Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

    Rusen Yan;Rusen Yan;Sara Fathipour;Yimo Han;Bo Song;Bo Song

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

    Tian Fang;Aniruddha Konar;Huili Xing;Debdeep Jena

  • Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

    Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu

  • Graphene Nanoribbon Tunnel Transistors

    Qin Zhang;Tian Fang;Huili Xing;A. Seabaugh

  • Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 / $R_{ ext{on,sp}}$ of up to 0.95 GW/cm 2

    Wenshen Li;Kazuki Nomoto;Zongyang Hu;Debdeep Jena

  • Intrinsic Electron Mobility Limits in beta-Ga2O3

    Nan Ma;Nicholas Tanen;Amit Verma;Zhi Guo

  • Unique prospects of graphene-based THz modulators

    Berardi Sensale-Rodriguez;Tian Fang;Rusen Yan;Michelle M. Kelly

  • Polarization-enhanced Mg doping of AlGaN/GaN superlattices

    Peter Kozodoy;Yulia P. Smorchkova;Monica Hansen;Huili Xing

  • Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

    Rusen Yan;Qin Zhang;Wei Li;Irene Calizo

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Kazuki Nomoto
Kazuki Nomoto Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Vladimir Protasenko
Vladimir Protasenko Cornell University
Sergei Rouvimov
Sergei Rouvimov University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Yu Cao
Yu Cao Zhejiang University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
David A. Muller
David A. Muller Cornell University

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