World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
46
Citations
12037
World Ranking
5051
National Ranking
1435

Marko J. Tadjer publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Marko J. Tadjer sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 203 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Marko J. Tadjer D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Marko J. Tadjer sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 46 D-Index — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Marko J. Tadjer is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily spans the fields of Materials Science and Engineering, with a focus on subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, and Renewable Energy, Sustainability and the Environment.

The scientist's work concentrates on several main topics, notably Ga2O3 and related materials, ZnO doping and properties, GaN-based semiconductor devices and materials, advanced photocatalysis techniques, electronic and structural properties of oxides, semiconductor materials and devices, and the thermal properties of materials.

Marko J. Tadjer has authored and contributed to several research papers, including:

  • "A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3" (2022) Applied Physics Reviews
  • "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" (2023) Journal of Physics D Applied Physics
  • "Integration of polycrystalline Ga2O3 on diamond for thermal management" (2020) Applied Physics Letters
  • "2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension" (2022) IEEE Electron Device Letters
  • "Toward gallium oxide power electronics" (2022) Science

The scientist frequently collaborates with several peers, including Karl D. Hobart, Alan G. Jacobs, Joseph Spencer, Travis J. Anderson, and James Spencer Lundh.

Marko J. Tadjer has been a contributor to multiple publication venues, among which are ECS Meeting Abstracts, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, ECS Journal of Solid State Science and Technology, and IEEE Electron Device Letters.

Best Publications

  • A review of Ga2O3 materials, processing, and devices

    S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

    Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim

  • Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

    Caldwell Jd;Anderson Tj;Culbertson Jc;Jernigan Gg

  • Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

    Joshua D. Caldwell;Travis J. Anderson;James C. Culbertson;Glenn G. Jernigan

  • Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

    Subrina Rafique;Lu Han;Marko J. Tadjer;Jaime A. Freitas

  • Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3

    Marko J. Tadjer;John L. Lyons;Neeraj Nepal;Jaime A. Freitas

  • 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers

    Jiancheng Yang;F. Ren;Marko Tadjer;S. J. Pearton

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Quantifying pulsed laser induced damage to graphene

    Marc Currie;Joshua D. Caldwell;Francisco J. Bezares;Jeremy Robinson

  • Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

    Yuhao Zhang;Zhihong Liu;Marko J. Tadjer;Min Sun

  • Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

    Marko J. Tadjer;Nadeemullah A. Mahadik;Virginia D. Wheeler;Evan R. Glaser

  • Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

    M. J. Tadjer;T. J. Anderson;K. D. Hobart;T. I. Feygelson

  • Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

    Subrina Rafique;Lu Han;Adam T. Neal;Shin Mou

  • Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

    Zhe Cheng;Luke Yates;Jingjing Shi;Marko J. Tadjer

  • Structural, Optical, and Electrical Characterization of Monoclinic β-Ga 2 O 3 Grown by MOVPE on Sapphire Substrates

    Marko J. Tadjer;Michael A. Mastro;Nadeemullah A. Mahadik;Marc Currie

  • Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

    Janghyuk Kim;Michael A. Mastro;Marko J. Tadjer;Jihyun Kim

  • Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga2O3 Micro-Flake

    Sooyeoun Oh;Michael A. Mastro;Marko J. Tadjer;Ji Hyun Kim

  • Activation of Mg implanted in GaN by multicycle rapid thermal annealing

    T.J. Anderson;B.N. Feigelson;F.J. Kub;M.J. Tadjer

  • Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

    Zhe Cheng;Virginia D. Wheeler;Tingyu Bai;Jingjing Shi

  • Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics.

    Janghyuk Kim;Michael A. Mastro;Marko J. Tadjer;Ji Hyun Kim

Frequent Co-Authors

Karl D. Hobart
Karl D. Hobart United States Naval Research Laboratory
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
Francis J. Kub
Francis J. Kub United States Naval Research Laboratory
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
Samuel Graham
Samuel Graham Georgia Institute of Technology
Ji Hyun Kim
Ji Hyun Kim Seoul National University
Mark S. Goorsky
Mark S. Goorsky University of California, Los Angeles

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