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Engineering and Technology

D-Index
46
Citations
12037
World Ranking
5049
National Ranking
1434

Overview

Marko J. Tadjer is affiliated with the United States Naval Research Laboratory in the United States. Their research primarily spans the fields of Materials Science and Engineering, with a focus on subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, and Renewable Energy, Sustainability and the Environment.

The scientist's work concentrates on several main topics, notably Ga2O3 and related materials, ZnO doping and properties, GaN-based semiconductor devices and materials, advanced photocatalysis techniques, electronic and structural properties of oxides, semiconductor materials and devices, and the thermal properties of materials.

Marko J. Tadjer has authored and contributed to several research papers, including:

  • "A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3" (2022) Applied Physics Reviews
  • "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" (2023) Journal of Physics D Applied Physics
  • "Integration of polycrystalline Ga2O3 on diamond for thermal management" (2020) Applied Physics Letters
  • "2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension" (2022) IEEE Electron Device Letters
  • "Toward gallium oxide power electronics" (2022) Science

The scientist frequently collaborates with several peers, including Karl D. Hobart, Alan G. Jacobs, Joseph Spencer, Travis J. Anderson, and James Spencer Lundh.

Marko J. Tadjer has been a contributor to multiple publication venues, among which are ECS Meeting Abstracts, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, ECS Journal of Solid State Science and Technology, and IEEE Electron Device Letters.

Best Publications

  • A review of Ga2O3 materials, processing, and devices

    S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

    Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim

  • Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.

    Caldwell Jd;Anderson Tj;Culbertson Jc;Jernigan Gg

  • Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

    Joshua D. Caldwell;Travis J. Anderson;James C. Culbertson;Glenn G. Jernigan

  • Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

    Subrina Rafique;Lu Han;Marko J. Tadjer;Jaime A. Freitas

  • Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3

    Marko J. Tadjer;John L. Lyons;Neeraj Nepal;Jaime A. Freitas

  • 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers

    Jiancheng Yang;F. Ren;Marko Tadjer;S. J. Pearton

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Quantifying pulsed laser induced damage to graphene

    Marc Currie;Joshua D. Caldwell;Francisco J. Bezares;Jeremy Robinson

  • Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

    Yuhao Zhang;Zhihong Liu;Marko J. Tadjer;Min Sun

  • Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

    Marko J. Tadjer;Nadeemullah A. Mahadik;Virginia D. Wheeler;Evan R. Glaser

  • Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

    M. J. Tadjer;T. J. Anderson;K. D. Hobart;T. I. Feygelson

  • Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

    Subrina Rafique;Lu Han;Adam T. Neal;Shin Mou

  • Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

    Zhe Cheng;Luke Yates;Jingjing Shi;Marko J. Tadjer

  • Structural, Optical, and Electrical Characterization of Monoclinic β-Ga 2 O 3 Grown by MOVPE on Sapphire Substrates

    Marko J. Tadjer;Michael A. Mastro;Nadeemullah A. Mahadik;Marc Currie

  • Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

    Janghyuk Kim;Michael A. Mastro;Marko J. Tadjer;Jihyun Kim

  • Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga2O3 Micro-Flake

    Sooyeoun Oh;Michael A. Mastro;Marko J. Tadjer;Ji Hyun Kim

  • Activation of Mg implanted in GaN by multicycle rapid thermal annealing

    T.J. Anderson;B.N. Feigelson;F.J. Kub;M.J. Tadjer

  • Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

    Zhe Cheng;Virginia D. Wheeler;Tingyu Bai;Jingjing Shi

  • Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics.

    Janghyuk Kim;Michael A. Mastro;Marko J. Tadjer;Ji Hyun Kim

Frequent Co-Authors

Karl D. Hobart
Karl D. Hobart United States Naval Research Laboratory
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
Francis J. Kub
Francis J. Kub United States Naval Research Laboratory
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
Samuel Graham
Samuel Graham Georgia Institute of Technology
Ji Hyun Kim
Ji Hyun Kim Seoul National University
Mark S. Goorsky
Mark S. Goorsky University of California, Los Angeles

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